利用金属有机物化学气相沉积(MOCVD)方法在蓝宝石c面衬底上制备出高反射率AlN/GaN分布布拉格反射镜(DBR)。利用分光光度计测量,在418 nm附近最大反射率达到99%。样品表面显微照片显示,有圆弧形缺陷和少量裂纹出现;在缺陷和裂纹以外的区域,DBR具有较为平坦的表面,其粗糙度在10μm×10μm面积上为3.3 nm左右。样品的截面扫描电镜(SEM)照片显示,DBR具有良好的周期性。对反射率和表面分析的结果表明,该样品达到了制备GaN基垂直腔面发射激光器(VCSEL)的要求。A high reflectivity AlN/GaN distributed Bragg reflector(DBR) is grown on c-plane sapphire substrate by metalorganic chemical vapor deposition(MOCVD).A peak reflectivity of 99% is observed around 418 nm by spectrophotometer.Compass-shape defects and a few cracks are observed on the surface.The surface root mean square(RMS) of roughness in the flat area is around 3.3 nm over a 10 μm×10 μm area.The cross-sectional scanning electron microscope(SEM) image reveals the good periodicity of DBR.Considering the peak reflectivity and surface morphology,the DBR can be used to fabricate GaN-based vertical cavity surface emitting laser(VCSEL).国家高技术研究“863”计划资助项目(2006AA03Z409
