142,812 research outputs found

    A randomised comparison of three different immobilisation devices for thoracic and abdominal cancers

    Get PDF
    Introduction: Patient immobilisation is critically important for both highly conformal conventionally fractionated radiotherapy and for stereotactic body radiotherapy. Different immobilisation devices are available to maintain patient position for radiotherapy but the most suitable one remains unknown. Methods: Forty-five patients were randomly allocated to one of three immobilisation devices; the Q fix arm shuttle, BodyFIX without wrap or BodyFIX with wrap. Patients were imaged before and after treatment to ascertain intra-fraction and inter-fraction motion. Bony anatomy was used for matching to determine the positional accuracy of each device. Treatments were timed using a standard method. Patient comfort and staff satisfaction questionnaires were also issued to determine comfort, ease of use and preferences for each device. Results: The BodyFIX without wrap was the more accurate device; however, the differences between the devices were not statistically significant. The BodyFIX with wrap was found to take significantly longer to set up and set down compared to the arm shuttle and the BodyFIX without wrap (all P < 0.001). Patients (37%) marginally preferred the BodyFIX with wrap. Most (81%) staff preferred the BodyFIX without wrap. Conclusion: Immobilisation using the BodyFIX without wrap was deemed to be suitable for clinical use. It was a clinically accurate device, the more efficient in terms of set up and set down time, the most preferred by staff and was accepted by patients

    Otter Realm, November 20, 2003, Vol. 9 No. 5

    Get PDF
    Measure Q, Special election to determine fate of Nativdad -- Taking back the campus -- Rowdy partie plague campus aprtments -- News: Community trots out life\u27s stresses -- Ballots have been mailed out -- Sports: Into the net: Otters suit up for new season -- Wounded Otter hopes for a speedy recovery -- Women\u27s volleyball has best season yet, Otters head to playoffs but are knocked out in round two -- Game wrap -- Under the surface: Divers explore underwater world -- Colin\u27s Column -- Outstanding Otters, Honors awarded for exceptional performance -- STREETLIFE SNAPSHOTS -- in the Mountains -- Cinema Thursday, Free flicks on campus draw crowd -- Arts & Entertainment:Ships ahoy! Study at Sea with Cal Maritime Academy -- Rule Breakers, Online dater does dinner and a movie -- Film festival spotlights Latin culture, talent -- Letters -- Editorial: HCOM administration shows lack of consideration for students -- Person on campus: Are parties a problem here on campus? -- Artist Spotlight: From Italy to CSUMB: Graphic artist combines nature, technologyhttps://digitalcommons.csumb.edu/otterrealm/1109/thumbnail.jp

    Bloomingdale’s and Retail, Wholesale and Department Store Union (RWDSU), Local 3 (2004)

    Get PDF

    Carrier Transport in High Mobility InAs Nanowire Junctionless Transistors

    Full text link
    Ability to understand and model the performance limits of nanowire transistors is the key to design of next generation devices. Here, we report studies on high-mobility junction-less gate-all-around nanowire field effect transistor with carrier mobility reaching 2000 cm2/V.s at room temperature. Temperature-dependent transport measurements reveal activated transport at low temperatures due to surface donors, while at room temperature the transport shows a diffusive behavior. From the conductivity data, the extracted value of sound velocity in InAs nanowires is found to be an order less than the bulk. This low sound velocity is attributed to the extended crystal defects that ubiquitously appear in these nanowires. Analyzing the temperature-dependent mobility data, we identify the key scattering mechanisms limiting the carrier transport in these nanowires. Finally, using these scattering models, we perform drift-diffusion based transport simulations of a nanowire field-effect transistor and compare the device performances with experimental measurements. Our device modeling provides insight into performance limits of InAs nanowire transistors and can be used as a predictive methodology for nanowire-based integrated circuits.Comment: 22 pages, 5 Figures, Nano Letter

    InAs nanowire transistors with multiple, independent wrap-gate segments

    Full text link
    We report a method for making horizontal wrap-gate nanowire transistors with up to four independently controllable wrap-gated segments. While the step up to two independent wrap-gates requires a major change in fabrication methodology, a key advantage to this new approach, and the horizontal orientation more generally, is that achieving more than two wrap-gate segments then requires no extra fabrication steps. This is in contrast to the vertical orientation, where a significant subset of the fabrication steps needs to be repeated for each additional gate. We show that cross-talk between adjacent wrap-gate segments is negligible despite separations less than 200 nm. We also demonstrate the ability to make multiple wrap-gate transistors on a single nanowire using the exact same process. The excellent scalability potential of horizontal wrap-gate nanowire transistors makes them highly favourable for the development of advanced nanowire devices and possible integration with vertical wrap-gate nanowire transistors in 3D nanowire network architectures.Comment: 18 pages, 5 figures, In press for Nano Letters (DOI below
    • …
    corecore