A 65-nm CMOS Temperature-Compensated Mobility-Based Frequency reference for wireless sensor networks

For the first time, a temperature-compensated CMOS frequency reference based on the electron mobility in a MOS transistor is presented. Over the temperature range from -55°C to 125 °C, its frequency spread is less than ±0.5% after a two-point trim and less than ±2.7% after a one-point trim. These results make it suitable for use in Wireless Sensor Network nodes. Fabricated in a baseline 65-nm CMOS process, the 150 kHz frequency reference occupies 0.2 mm2 and draws 42.6 μA from a 1.2-V supply at room temperature.\ud \u

Design and development of a novel Invasive Blood Pressure simulator for patient's monitor testing

This paper presents a newly-designed and realized Invasive Blood Pressure (IBP) device for the simulation on patient’s monitors. This device shows improvements and presents extended features with respect to a first prototype presented by the authors and similar systems available in the state-of-the-art. A peculiarity of the presented device is that all implemented features can be customized from the developer and from the point of view of the end user. The realized device has been tested, and its performances in terms of accuracy and of the back-loop measurement of the output for the blood pressure regulation utilization have been described. In particular, an accuracy of ±1 mmHg at 25 °C, on a range from −30 to 300 mmHg, was evaluated under different test conditions. The designed device is an ideal tool for testing IBP modules, for zero setting, and for calibrations. The implemented extended features, like the generation of custom waveforms and the Universal Serial Bus (USB) connectivity, allow use of this device in a wide range of applications, from research to equipment maintenance in clinical environments to educational purposes. Moreover, the presented device represents an innovation, both in terms of technology and methodologies: It allows quick and efficient tests to verify the proper functioning of IBP module of patients’ monitors. With this innovative device, tests can be performed directly in the field and faster procedures can be implemented by the clinical maintenance personnel. This device is an open source project and all materials, hardware, and software are fully available for interested developers or researchers.Web of Science201art. no. 25

Low Voltage Floating Gate MOS Transistor Based Four-Quadrant Multiplier

This paper presents a four-quadrant multiplier based on square-law characteristic of floating gate MOSFET (FGMOS) in saturation region. The proposed circuit uses square-difference identity and the differential voltage squarer proposed by Gupta et al. to implement the multiplication function. The proposed multiplier employs eight FGMOS transistors and two resistors only. The FGMOS implementation of the multiplier allows low voltage operation, reduced power consumption and minimum transistor count. The second order effects caused due to mobility degradation, component mismatch and temperature variations are discussed. Performance of the proposed circuit is verified at ±0.75 V in TSMC 0.18 µm CMOS, BSIM3 and Level 49 technology by using Cadence Spectre simulator

A 1.2-V 10- µW NPN-Based Temperature Sensor in 65-nm CMOS With an Inaccuracy of 0.2 °C (3σ) From 70 °C to 125 °C

An NPN-based temperature sensor with digital output transistors has been realized in a 65-nm CMOS process. It achieves a batch-calibrated inaccuracy of ±0.5 ◦C (3¾) and a trimmed inaccuracy of ±0.2 ◦C (3¾) over the temperature range from −70 ◦C to 125 ◦C. This performance is obtained by the use of NPN transistors as sensing elements, the use of dynamic techniques, i.e. correlated double sampling and dynamic element matching, and a single room-temperature trim. The sensor draws 8.3 μA from a 1.2-V supply and occupies an area of 0.1 mm2

Logarithmic circuit with wide dynamic range

A circuit deriving an output voltage that is proportional to the logarithm of a dc input voltage susceptible to wide variations in amplitude includes a constant current source which forward biases a diode so that the diode operates in the exponential portion of its voltage versus current characteristic, above its saturation current. The constant current source includes first and second, cascaded feedback, dc operational amplifiers connected in negative feedback circuit. An input terminal of the first amplifier is responsive to the input voltage. A circuit shunting the first amplifier output terminal includes a resistor in series with the diode. The voltage across the resistor is sensed at the input of the second dc operational feedback amplifier. The current flowing through the resistor is proportional to the input voltage over the wide range of variations in amplitude of the input voltage

Design and Tests of the Silicon Sensors for the ZEUS Micro Vertex Detector

To fully exploit the HERA-II upgrade,the ZEUS experiment has installed a Micro Vertex Detector (MVD) using n-type, single-sided, silicon micro-strip sensors with capacitive charge division. The sensors have a readout pitch of 120 micrometers, with five intermediate strips (20 micrometer strip pitch). The designs of the silicon sensors and of the test structures used to verify the technological parameters, are presented. Results on the electrical measurements are discussed. A total of 1123 sensors with three different geometries have been produced by Hamamatsu Photonics K.K. Irradiation tests with reactor neutrons and Co-60 photons have been performed for a small sample of sensors. The results on neutron irradiation (with a fluence of 1 x 10^{13} 1 MeV equivalent neutrons / cm^2) are well described by empirical formulae for bulk damage. The Co-60 photons (with doses up to 2.9 kGy) show the presence of generation currents in the SiO_2-Si interface, a large shift of the flatband voltage and a decrease of the hole mobility.Comment: 33 pages, 25 figures, 3 tables, accepted for publication in NIM

Automatic controls and regulators: A compilation

Devices, methods, and techniques for control and regulation of the mechanical/physical functions involved in implementing the space program are discussed. Section one deals with automatic controls considered to be, essentially, start-stop operations or those holding the activity in a desired constraint. Devices that may be used to regulate activities within desired ranges or subject them to predetermined changes are dealt with in section two

Near-Zero-Power Temperature Sensing via Tunneling Currents Through Complementary Metal-Oxide-Semiconductor Transistors.

Temperature sensors are routinely found in devices used to monitor the environment, the human body, industrial equipment, and beyond. In many such applications, the energy available from batteries or the power available from energy harvesters is extremely limited due to limited available volume, and thus the power consumption of sensing should be minimized in order to maximize operational lifetime. Here we present a new method to transduce and digitize temperature at very low power levels. Specifically, two pA current references are generated via small tunneling-current metal-oxide-semiconductor field effect transistors (MOSFETs) that are independent and proportional to temperature, respectively, which are then used to charge digitally-controllable banks of metal-insulator-metal (MIM) capacitors that, via a discrete-time feedback loop that equalizes charging time, digitize temperature directly. The proposed temperature sensor was integrated into a silicon microchip and occupied 0.15 mm2 of area. Four tested microchips were measured to consume only 113 pW with a resolution of 0.21 °C and an inaccuracy of ±1.65 °C, which represents a 628× reduction in power compared to prior-art without a significant reduction in performance

Insights into dynamic tuning of magnetic-resonant wireless power transfer receivers based on switch-mode gyrators

Magnetic-resonant wireless power transfer (WPT) has become a reliable contactless source of power for a wide range of applications. WPT spans different power levels ranging from low-power implantable devices up to high-power electric vehicles (EV) battery charging. The transmission range and efficiency of WPT have been reasonably enhanced by resonating the transmitter and receiver coils at a common frequency. Nevertheless, matching between resonance in the transmitter and receiver is quite cumbersome, particularly in single-transmitter multi-receiver systems. The resonance frequency in transmitter and receiver tank circuits has to be perfectly matched, otherwise power transfer capability is greatly degraded. This paper discusses the mistuning effect of parallel-compensated receivers, and thereof a novel dynamic frequency tuning method and related circuit topology and control is proposed and characterized in the system application. The proposed method is based on the concept of switch-mode gyrator emulating variable lossless inductors oriented to enable self-tunability in WPT receiversPeer ReviewedPostprint (published version