Low power VCO-based analog-to-digital conversion

textThis dissertation presents novel two stage ADC architecture with a VCO based second stage. With the scaling of the supply voltages in modern CMOS process it is difficult to design high gain operational amplifiers needed for traditional voltage domain two-stage analog to digital converters. However time resolution continues to improve with the advancement in CMOS technology making VCO-based ADC more attractive. The nonlinearity in voltage-to-frequency transfer function is the biggest challenge in design of VCO based ADC. The hybrid approach used in this work uses a voltage domain first stage to determine the most significant bits and uses a VCO based second stage to quantize the small residue obtained from first stage. The architecture relaxes the gain requirement on the the first stage opamp and also relaxes the linearity requirements on the second stage VCO. The prototype ADC built in 65nm CMOS process achieves 63.7dB SNDR in 10MHz bandwidth while only consuming 1.1mW of power. The performance of the prototype chip is comparable to the state-of-art in terms of figure-of-merit but this new architecture uses significantly less circuit area.Electrical and Computer Engineerin

ULTRA-LOW-JITTER, MMW-BAND FREQUENCY SYNTHESIZERS BASED ON A CASCADED ARCHITECTURE

Department of Electrical EngineeringThis thesis presents an ultra-low-jitter, mmW-band frequency synthesizers based on a cascaded architecture. First, the mmW-band frequency synthesizer based on a CP PLL is presented. At the first stage, the CP PLL operating at GHz-band frequencies generated low-jitter output signals due to a high-Q VCO. At the second stage, an ILFM operating at mmW-band frequencies has a wide injection bandwidth, so that the jitter performance of the mmW-band output signals is determined by the GHz-range PLL. The proposed ultra-low-jitter, mmW-band frequency synthesizer based on a CP PLL, fabricated in a 65-nm CMOS technology, generated output signals from GHz-band frequencies to mmW-band frequencies, achieving an RMS jitter of 206 fs and an IPN of ???31 dBc. The active silicon area and the total power consumption were 0.32 mm2 and 42 mW, respectively. However, due to a large in-band phase noise contribution of a PFD and a CP in the CP PLL, this first stage was difficult to achieve an ultra-low in-band phase noise. Second, to improve the in-band phase noise further, the mmW-band frequency synthesizer based on a digital SSPLL is presented. At the first stage, the digital SSPLL operating at GHz-band frequencies generated ultra-low-jitter output signals due to its sub-sampling operation and a high-Q GHz VCO. To minimize the quantization noise of the voltage quantizer in the digital SSPLL, this thesis presents an OSVC as a voltage quantizer while a small amount of power was consumed. The proposed ultra-low-jitter, mmW-band frequency synthesizer fabricated in a 65-nm CMOS technology, generated output signals from GHz-band frequencies to mmW-band frequencies, achieving an RMS jitter of 77 fs and an IPN of ???40 dBc. The active silicon area and the total power consumption were 0.32 mm2 and 42 mW, respectively.clos

A Highly Digital VCO-Based ADC With Lookup-Table-Based Background Calibration

CMOS technology scaling has enabled dramatic improvement for digital circuits both in terms of speed and power efficiency. However, most traditional analog-to-digital converter (ADC) architectures are challenged by ever-decreasing supply voltage. The improvement in time resolution enabled by increased digital speeds drives design towards time-domain architectures such as voltage-controlled-oscillator (VCO) based ADCs. The main challenge in VCO-based ADC design is mitigating the nonlinearity of VCO Voltage-to-frequency (V-to-f) characteristics. Achieving signal-to-noise ratio (SNR) performance better than 40dB requires some form of calibration, which can be realized by analog or digital techniques, or some combination. This dissertation proposes a highly digital, reconfigurable VCO-based ADC with lookup-table (LUT) based background calibration based on split ADC architecture. Each of the two split channels, ADC A and B , contains two VCOs in a differential configuration. This helps alleviate even-order distortions as well as increase the dynamic range. A digital controller on chip can reconfigure the ADCs\u27 sampling rates and resolutions to adapt to various application scenarios. Different types of input signals can be used to train the ADC’s LUT parameters through the simple, anti-aliasing continuous-time input to achieve target resolution. The chip is fabricated in a 180 nm CMOS process, and the active area of analog and digital circuits is 0.09 and 0.16mm^2, respectively. Power consumption of the core ADC function is 25 mW. Measured results for this prototype design with 12-b resolution show ENOB improves from uncorrected 5-b to 11.5-b with calibration time within 200 ms (780K conversions at 5 MSps sample rate)

Noise shaping Asynchronous SAR ADC based time to digital converter

Time-to-digital converters (TDCs) are key elements for the digitization of timing information in modern mixed-signal circuits such as digital PLLs, DLLs, ADCs, and on-chip jitter-monitoring circuits. Especially, high-resolution TDCs are increasingly employed in on-chip timing tests, such as jitter and clock skew measurements, as advanced fabrication technologies allow fine on-chip time resolutions. Its main purpose is to quantize the time interval of a pulse signal or the time interval between the rising edges of two clock signals. Similarly to ADCs, the performance of TDCs are also primarily characterized by Resolution, Sampling Rate, FOM, SNDR, Dynamic Range and DNL/INL. This work proposes and demonstrates 2nd order noise shaping Asynchronous SAR ADC based TDC architecture with highest resolution of 0.25 ps among current state of art designs with respect to post-layout simulation results. This circuit is a combination of low power/High Resolution 2nd Order Noise Shaped Asynchronous SAR ADC backend with simple Time to Amplitude converter (TAC) front-end and is implemented in 40nm CMOS technology. Additionally, special emphasis is given on the discussion on various current state of art TDC architectures.Electrical and Computer Engineerin

Time-based, Low-power, Low-offset 5-bit 1 GS/s Flash ADC Design in 65nm CMOS Technology

Low-power, medium resolution, high-speed analog-to-digital converters (ADCs) have always been important block which have abundant applications such as digital signal processors (DSP), imaging sensors, environmental and biomedical monitoring devices. This study presents a low power Flash ADC designed in nanometer complementary metal-oxide semiconductors (CMOS) technology. Time analysis on the output delay of the comparators helps to generate one more bit. The proposed technique reduced the power consumption and chip area substantially in comparison to the previous state-of-the-art work. The proposed ADC was developed in TSMC 65nm CMOS technology. The offset cancellation technique was embedded in the proposed comparator to decrement the static offset of the comparator. Moreover, one more bit was generated without using extra comparators. The proposed ADC achieved 4.1 bits ENOB at input Nyquist frequency. The simulated differential and integral non-linearity static tests were equal to +0.26/-0.17 and +0.22/-0.15, respectively. The ADC consumed 7.7 mW at 1 GHz sampling frequency, achieving 415 fJ/Convstep Figure of Merit (FoM)

Designs and calibration of delay-line based ADCs

Delay line ADCs become more and more attractive with technology scaling to smaller dimensions with lower voltages. Time domain resolution can be increased by high speed delay cells. A GHz sampling rate can be easily achieved with low power. However, linearity, which has always been an issue, becomes a problem with longer delay lines. Resolutions of reported delay-line ADCs are hardly more than 4 bits with sampling rates of hundreds of MHz. Thus, this dissertation addresses the linearity issue of delay line ADCs. First, a novel 11-bit hybrid ADC using flash and delay line architectures, where a 4-bit flash ADC is followed by a 7-bit delay-line ADC, is proposed. In this structure, the noise/error of the second stage delay-line ADC is attenuated at the hybrid ADC output, such that the overall performance would not be limited by the poor linearity of the delay-line ADC. The achieved figure of merit (FOM) of 33.8 fJ/conversion-step is competitive with state-of-the-art ADCs. Furthermore, the proposed ADC inherits accuracy and high speed from the flash ADC and the delay-line ADC, respectively. The inherited advantages strongly support the scalability of the proposed ADC to provide a better performance with low power in further scaled fabrication processes. Second, in order to remove the harmonic distortion of delay-line ADC, we present a technique which extends harmonic distortion correction (HDC) to digitally calibrate a delay-line ADC. In our simulation results, digital calibration improves SNDR from 25.6 dB to 42.5 dB by averaging $2^{27}$ sample points, which corresponds to a 0.86 second calibration time. Last, a multiple-pass delay line ADC is proposed to improve overall ADC performance in terms of speed and resolution. In this structure, a multiple-pass delay cell can be early triggered by the previous cell to increase speed. Also, phase interpolation is used to improve the effective number of bits. The design is designed and simulated in a commercial 40nm process technology. With 500MHz sampling rate, the multiple-pass delay line ADC achieves an SNDR of 37 dB and consumes 4.2 mW, which is competitive with other reported ADCs.Electrical and Computer Engineerin

A 0.1–5.0 GHz flexible SDR receiver with digitally assisted calibration in 65 nm CMOS

© 2017 Elsevier Ltd. All rights reserved.A 0.1–5.0 GHz flexible software-defined radio (SDR) receiver with digitally assisted calibration is presented, employing a zero-IF/low-IF reconfigurable architecture for both wideband and narrowband applications. The receiver composes of a main-path based on a current-mode mixer for low noise, a high linearity sub-path based on a voltage-mode passive mixer for out-of-band rejection, and a harmonic rejection (HR) path with vector gain calibration. A dual feedback LNA with “8” shape nested inductor structure, a cascode inverter-based TCA with miller feedback compensation, and a class-AB full differential Op-Amp with Miller feed-forward compensation and QFG technique are proposed. Digitally assisted calibration methods for HR, IIP2 and image rejection (IR) are presented to maintain high performance over PVT variations. The presented receiver is implemented in 65 nm CMOS with 5.4 mm2 core area, consuming 9.6–47.4 mA current under 1.2 V supply. The receiver main path is measured with +5 dB m/+5dBm IB-IIP3/OB-IIP3 and +61dBm IIP2. The sub-path achieves +10 dB m/+18dBm IB-IIP3/OB-IIP3 and +62dBm IIP2, as well as 10 dB RF filtering rejection at 10 MHz offset. The HR-path reaches +13 dB m/+14dBm IB-IIP3/OB-IIP3 and 62/66 dB 3rd/5th-order harmonic rejection with 30–40 dB improvement by the calibration. The measured sensitivity satisfies the requirements of DVB-H, LTE, 802.11 g, and ZigBee.Peer reviewedFinal Accepted Versio

Re-thinking Analog Integrated Circuits in Digital Terms: A New Design Concept for the IoT Era

A steady trend towards the design of mostly-digital and digital-friendly analog circuits, suitable to integration in mainstream nanoscale CMOS by a highly automated design flow, has been observed in the last years to address the requirements of the emerging Internet of Things (IoT) applications. In this context, this tutorial brief presents an overview of concepts and design methodologies that emerged in the last decade, aimed to the implementation of analog circuits like Operational Transconductance Amplifiers, Voltage References and Data Converters by digital circuits. The current design challenges and application scenarios as well as the future perspectives and opportunities in the field of digital-based analog processing are finally discussed

Time-encoding analog-to-digital converters : bridging the analog gap to advanced digital CMOS? Part 2: architectures and circuits

The scaling of CMOS technology deep into the nanometer range has created challenges for the design of highperformance analog ICs: they remain large in area and power consumption in spite of process scaling. Analog circuits based on time encoding [1], [2], where the signal information is encoded in the waveform transitions instead of its amplitude, have been developed to overcome these issues. While part one of this overview article [3] presented the basic principles of time encoding, this follow-up article describes and compares the main time-encoding architectures for analog-to-digital converters (ADCs) and discusses the corresponding design challenges of the circuit blocks. The focus is on structures that avoid, as much as possible, the use of traditional analog blocks like operational amplifiers (opamps) or comparators but instead use digital circuitry, ring oscillators, flip-flops, counters, an so on. Our overview of the state of the art will show that these circuits can achieve excellent performance. The obvious benefit of this highly digital approach to realizing analog functionality is that the resulting circuits are small in area and more compatible with CMOS process scaling. The approach also allows for the easy integration of these analog functions in systems on chip operating at "digital" supply voltages as low as 1V and lower. A large part of the design process can also be embedded in a standard digital synthesis flow