Layout level design for testability strategy applied to a CMOS cell library

The layout level design for testability (LLDFT) rules used here allow to avoid some hard to detect faults or even undetectable faults on a cell library by modifying the cell layout without changing their behavior and achieving a good level of reliability. These rules avoid some open faults or reduce their appearance probability. The main purpose has been to apply that set of LLDFT rules on the cells of the library designed at the Centre Nacional de Microelectronica (CNM) in order to obtain a highly testable cell library. The authors summarize the main results (area overhead and performance degradation) of the application of the LLDFT rules on the cell

Testability enhancement of a basic set of CMOS cells

Testing should be evaluated as the ability of the test patterns to cover realistic faults, and high quality IC products demand high quality testing. We use a test strategy based on physical design for testability (to discover both open and short faults, which are difficult or even impossible to detect). Consequentially, layout level design for testability (LLDFT) rules have been developed, which prevent the faults, or at least reduce the chance of their appearing. The main purpose of this work is to apply a practical set of LLDFT rules to the library cells designed by the Centre Nacional de Microelectrònica (CNM) and obtain a highly testable cell library. The main results of the application of the LLDFT rules (area overheads and performance degradation) are summarized and the results are significant since IC design is highly repetitive; a small effort to improve cell layout can bring about great improvement in design

Quiescent current testing of CMOS data converters

Power supply quiescent current (IDDQ) testing has been very effective in VLSI circuits designed in CMOS processes detecting physical defects such as open and shorts and bridging defects. However, in sub-micron VLSI circuits, IDDQ is masked by the increased subthreshold (leakage) current of MOSFETs affecting the efficiency of I¬DDQ testing. In this work, an attempt has been made to perform robust IDDQ testing in presence of increased leakage current by suitably modifying some of the test methods normally used in industry. Digital CMOS integrated circuits have been tested successfully using IDDQ and IDDQ methods for physical defects. However, testing of analog circuits is still a problem due to variation in design from one specific application to other. The increased leakage current further complicates not only the design but also testing. Mixed-signal integrated circuits such as the data converters are even more difficult to test because both analog and digital functions are built on the same substrate. We have re-examined both IDDQ and IDDQ methods of testing digital CMOS VLSI circuits and added features to minimize the influence of leakage current. We have designed built-in current sensors (BICS) for on-chip testing of analog and mixed-signal integrated circuits. We have also combined quiescent current testing with oscillation and transient current test techniques to map large number of manufacturing defects on a chip. In testing, we have used a simple method of injecting faults simulating manufacturing defects invented in our VLSI research group. We present design and testing of analog and mixed-signal integrated circuits with on-chip BICS such as an operational amplifier, 12-bit charge scaling architecture based digital-to-analog converter (DAC), 12-bit recycling architecture based analog-to-digital converter (ADC) and operational amplifier with floating gate inputs. The designed circuits are fabricated in 0.5 μm and 1.5 μm n-well CMOS processes and tested. Experimentally observed results of the fabricated devices are compared with simulations from SPICE using MOS level 3 and BSIM3.1 model parameters for 1.5 μm and 0.5 μm n-well CMOS technologies, respectively. We have also explored the possibility of using noise in VLSI circuits for testing defects and present the method we have developed

Faulty Behavior of Storage Elements and Its Effects on Sequential Circuits

It is often assumed that the faults in storage elements (SEs) can be modeled as output/input stuck-at faults of the element. They are implicitly considered equivalent to the stuck-at faults in the combinational logic surrounding the SE cells. Transistor-level faults in common SEs are examined here. A more accurate higher level fault model for elementary SEs that better represents the physical failures is presented. It is shown that a minimal (stuck-at) model may be adequate if only modest fault coverage is desired. The enhanced model includes some common fault behaviors of SEs that are not covered by the minimal fault model. These include data-feedthrough and clock-feedthrough behaviors, as well as problems with logic level retention. Fault models for complex SE cells can be obtained without a significant loss of information about the structure of the circuit. The detectability of feedthrough faults is considered

LSI/VLSI design for testability analysis and general approach

The incorporation of testability characteristics into large scale digital design is not only necessary for, but also pertinent to effective device testing and enhancement of device reliability. There are at least three major DFT techniques, namely, the self checking, the LSSD, and the partitioning techniques, each of which can be incorporated into a logic design to achieve a specific set of testability and reliability requirements. Detailed analysis of the design theory, implementation, fault coverage, hardware requirements, application limitations, etc., of each of these techniques are also presented

Testability and redundancy techniques for improved yield and reliability of CMOS VLSI circuits

The research presented in this thesis is concerned with the design of fault-tolerant integrated circuits as a contribution to the design of fault-tolerant systems. The economical manufacture of very large area ICs will necessitate the incorporation of fault-tolerance features which are routinely employed in current high density dynamic random access memories. Furthermore, the growing use of ICs in safety-critical applications and/or hostile environments in addition to the prospect of single-chip systems will mandate the use of fault-tolerance for improved reliability. A fault-tolerant IC must be able to detect and correct all possible faults that may affect its operation. The ability of a chip to detect its own faults is not only necessary for fault-tolerance, but it is also regarded as the ultimate solution to the problem of testing. Off-line periodic testing is selected for this research because it achieves better coverage of physical faults and it requires less extra hardware than on-line error detection techniques. Tests for CMOS stuck-open faults are shown to detect all other faults. Simple test sequence generation procedures for the detection of all faults are derived. The test sequences generated by these procedures produce a trivial output, thereby, greatly simplifying the task of test response analysis. A further advantage of the proposed test generation procedures is that they do not require the enumeration of faults. The implementation of built-in self-test is considered and it is shown that the hardware overhead is comparable to that associated with pseudo-random and pseudo-exhaustive techniques while achieving a much higher fault coverage through-the use of the proposed test generation procedures. The consideration of the problem of testing the test circuitry led to the conclusion that complete test coverage may be achieved if separate chips cooperate in testing each other's untested parts. An alternative approach towards complete test coverage would be to design the test circuitry so that it is as distributed as possible and so that it is tested as it performs its function. Fault correction relies on the provision of spare units and a means of reconfiguring the circuit so that the faulty units are discarded. This raises the question of what is the optimum size of a unit? A mathematical model, linking yield and reliability is therefore developed to answer such a question and also to study the effects of such parameters as the amount of redundancy, the size of the additional circuitry required for testing and reconfiguration, and the effect of periodic testing on reliability. The stringent requirement on the size of the reconfiguration logic is illustrated by the application of the model to a typical example. Another important result concerns the effect of periodic testing on reliability. It is shown that periodic off-line testing can achieve approximately the same level of reliability as on-line testing, even when the time between tests is many hundreds of hours

Product assurance technology for custom LSI/VLSI electronics

The technology for obtaining custom integrated circuits from CMOS-bulk silicon foundries using a universal set of layout rules is presented. The technical efforts were guided by the requirement to develop a 3 micron CMOS test chip for the Combined Release and Radiation Effects Satellite (CRRES). This chip contains both analog and digital circuits. The development employed all the elements required to obtain custom circuits from silicon foundries, including circuit design, foundry interfacing, circuit test, and circuit qualification

The Fifth NASA Symposium on VLSI Design

The fifth annual NASA Symposium on VLSI Design had 13 sessions including Radiation Effects, Architectures, Mixed Signal, Design Techniques, Fault Testing, Synthesis, Signal Processing, and other Featured Presentations. The symposium provides insights into developments in VLSI and digital systems which can be used to increase data systems performance. The presentations share insights into next generation advances that will serve as a basis for future VLSI design

Robustness Analysis of Controllable-Polarity Silicon Nanowire Devices and Circuits

Substantial downscaling of the feature size in current CMOS technology has confronted digital designers with serious challenges including short channel effect and high amount of leakage power. To address these problems, emerging nano-devices, e.g., Silicon NanoWire FET (SiNWFET), is being introduced by the research community. These devices keep on pursuing Mooreâs Law by improving channel electrostatic controllability, thereby reducing the Off âstate leakage current. In addition to these improvements, recent developments introduced devices with enhanced capabilities, such as Controllable-Polarity (CP) SiNWFETs, which make them very interesting for compact logic cell and arithmetic circuits. At advanced technology nodes, the amount of physical controls, during the fabrication process of nanometer devices, cannot be precisely determined because of technology fluctuations. Consequently, the structural parameters of fabricated circuits can be significantly different from their nominal values. Moreover, giving an a-priori conclusion on the variability of advanced technologies for emerging nanoscale devices, is a difficult task and novel estimation methodologies are required. This is a necessity to guarantee the performance and the reliability of future integrated circuits. Statistical analysis of process variation requires a great amount of numerical data for nanoscale devices. This introduces a serious challenge for variability analysis of emerging technologies due to the lack of fast simulation models. One the one hand, the development of accurate compact models entails numerous tests and costly measurements on fabricated devices. On the other hand, Technology Computer Aided Design (TCAD) simulations, that can provide precise information about devices behavior, are too slow to timely generate large enough data set. In this research, a fast methodology for generating data set for variability analysis is introduced. This methodology combines the TCAD simulations with a learning algorithm to alleviate the time complexity of data set generation. Another formidable challenge for variability analysis of the large circuits is growing number of process variation sources. Utilizing parameterized models is becoming a necessity for chip design and verification. However, the high dimensionality of parameter space imposes a serious problem. Unfortunately, the available dimensionality reduction techniques cannot be employed for three main reasons of lack of accuracy, distribution dependency of the data points, and finally incompatibility with device and circuit simulators. We propose a novel technique of parameter selection for modeling process and performance variation. The proposed technique efficiently addresses the aforementioned problems. Appropriate testing, to capture manufacturing defects, plays an important role on the quality of integrated circuits. Compared to conventional CMOS, emerging nano-devices such as CP-SiNWFETs have different fabrication process steps. In this case, current fault models must be extended for defect detection. In this research, we extracted the possible fabrication defects, and then proposed a fault model for this technology. We also provided a couple of test methods for detecting the manufacturing defects in various types of CP-SiNWFET logic gates. Finally, we used the obtained fault model to build fault tolerant arithmetic circuits with a bunch of superior properties compared to their competitors