Development of CMOS active pixel sensors

This thesis was submitted for the degree of Doctor of Philosophy and awarded by Brunel University.This thesis describes an investigation into the suitability of complementary metal oxide semiconductor (CMOS) active pixel sensor (APS) devices for scientific imaging applications. CMOS APS offer a number of advantages over the established charge-coupled device (CCD) technology, primarily in the areas of low power consumption, high-speed parallel readout and random (X-Y) addressing, increased system integration and improved radiation hardness. The investigation used a range of newly designed Test Structures in conjunction with a range of custom developed test equipment to characterise device performance. Initial experimental work highlighted the significant non-linearity in the charge conversion gain (responsivity) and found the read noise to be limited by the kTC component due to resetting of the pixel capacitance. The major experimental study investigated the contribution to dark signal due to hot-carrier injection effects from the in-pixel transistors during read-out and highlighted the importance of the contribution at low signal levels. The quantum efficiency (QE) and cross-talk were also investigated and found to be limited by the pixel fill factor and shallow depletion depth of the photodiode. The work has highlighted the need to design devices to explore the effects of individual components rather than stand-alone imaging devices and indicated further developments are required for APS technology to compete with the CCD for high-end scientific imaging applications. The main areas requiring development are in achieving backside illuminated, deep depletion devices with low dark signal and low noise sampling techniques.Engineering and Physical Sciences Research Council; e2v Technologie

Custom Integrated Circuits

Contains table of contents for Part III, table of contents for Section 1 and reports on eleven research projects.IBM CorporationMIT School of EngineeringNational Science Foundation Grant MIP 94-23221Defense Advanced Research Projects Agency/U.S. Army Intelligence Center Contract DABT63-94-C-0053Mitsubishi CorporationNational Science Foundation Young Investigator Award Fellowship MIP 92-58376Joint Industry Program on Offshore Structure AnalysisAnalog DevicesDefense Advanced Research Projects AgencyCadence Design SystemsMAFET ConsortiumConsortium for Superconducting ElectronicsNational Defense Science and Engineering Graduate FellowshipDigital Equipment CorporationMIT Lincoln LaboratorySemiconductor Research CorporationMultiuniversity Research IntiativeNational Science Foundatio

Preliminary candidate advanced avionics system for general aviation

An integrated avionics system design was carried out to the level which indicates subsystem function, and the methods of overall system integration. Sufficient detail was included to allow identification of possible system component technologies, and to perform reliability, modularity, maintainability, cost, and risk analysis upon the system design. Retrofit to older aircraft, availability of this system to the single engine two place aircraft, was considered

トランジスタ・アレイ方式に基づくアナログレイアウトにおける密度最適化

In integrated circuit design of advanced technology nodes, layout density uniformity significantly influences the manufacturability due to the CMP variability. In analog design, especially, designers are suffering from passing the density checking since there are few useful tools. To tackle this issue, we focus on a transistor-array(TA)-style analog layout, and propose a density optimization algorithm consistent with complicated design rules. Based on TA-style, we introduce a density-aware layout format to explicitly control the layout pattern density, and provide the mathematical optimization approach. Hence, a design flow incorporating our density optimization can drastically reduce the design time with fewer iterations. In a design case of an OPAMP layout in a 65nm CMOS process, the result demonstrates that the proposed approach achieves more than 48× speed-up compared with conventional manual layout, meanwhile, it shows a good circuit performance in the post-layout simulation.北九州市立大

Design of LCOS microdisplay backplanes for projection applications

De evolutie van licht emitterende diodes (LED) heeft ervoor gezorgd dat het op dit moment interessant wordt om deze componenten als lichtbron te gebruiken in projectiesystemen. LED’s hebben belangrijke voordelen vergeleken met klassieke booglampen. Ze zijn compact, ze hebben een veel grotere levensduur en ogenblikkelijke schakeltijden, ze werken op lage spanningen, etc. LED’s zijn smalbandig en kunnen een groterekleurenbereik realiseren. Ze hebben momenteel echter een beperkte helderheid. Naast de lichtbron is het type van de lichtklep ook bepalend voor de kwaliteit van een projectiesysteem. Er bestaan verschillende lichtkleptechnologieën waaronder die van de reflectieve LCOS-panelen. Deze lichtkleppen kunnen zeer hoge resoluties hebben en wordenvaak gebruikt in kwalitatieve, professionele projectiesystemen. LED’s zijn echter totaal verschillend van booglampen. Ze hebben een andere vorm, package, stralingspatroon, aansturing, fysische en thermische eigenschappen, etc. Hoewel er een twintigtal optische architecturen bekend zijn voor reflectieve beeldschermen (met een booglamp als lichtbron), zijn ze niet geschikt voor LED-projectoren en moeten nieuwe optische architecturen en een elektronische aansturing ontwikkeld worden. In dit doctoraat werd er hieromtrent onderzoek gedaan. Er werd uiteindelijk een driekleurenprojector (R, G, B) met een efficiënt LED-belichtingssysteem gebouwd met twee LCOS-lichtkleppen. Deze LEDprojector heeft superieure eigenschappen (zeer lange levensduur, beeldkwaliteit, etc.) en een matige lichtopbrengst

Development of CMOS active pixel sensors

This thesis describes an investigation into the suitability of complementary metal oxide semiconductor (CMOS) active pixel sensor (APS) devices for scientific imaging applications. CMOS APS offer a number of advantages over the established charge-coupled device (CCD) technology, primarily in the areas of low power consumption, high-speed parallel readout and random (X-Y) addressing, increased system integration and improved radiation hardness. The investigation used a range of newly designed Test Structures in conjunction with a range of custom developed test equipment to characterise device performance. Initial experimental work highlighted the significant non-linearity in the charge conversion gain (responsivity) and found the read noise to be limited by the kTC component due to resetting of the pixel capacitance. The major experimental study investigated the contribution to dark signal due to hot-carrier injection effects from the in-pixel transistors during read-out and highlighted the importance of the contribution at low signal levels. The quantum efficiency (QE) and cross-talk were also investigated and found to be limited by the pixel fill factor and shallow depletion depth of the photodiode. The work has highlighted the need to design devices to explore the effects of individual components rather than stand-alone imaging devices and indicated further developments are required for APS technology to compete with the CCD for high-end scientific imaging applications. The main areas requiring development are in achieving backside illuminated, deep depletion devices with low dark signal and low noise sampling techniques.EThOS - Electronic Theses Online ServiceEngineering and Physical Sciences Research Councile2v TechnologiesGBUnited Kingdo