23 research outputs found

    Rail-to-rail class AB CMOS tunable transconductor with -52dB IM3 at 1MHz

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    A novel CMOS tunable transconductor is presented. The circuit operates in classAB hence featuring power efficiency. The internal feedback employed and the use of a linearized triode transistor for voltage-to-current conversion allows achieving high linearity. Rail-to-rail input range is obtained by using floatinggate transistors. Measurement results for a test chip prototype in a 0.5”m standard CMOS process show an IM3 of -52.13dB at 1MHz for a 2Vpp input and a power consumption of 2.2mW

    A tunable floating-gate CMOS transconductor based on current multiplication

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    In this paper a novel transconductor based on floating gate techniques that performs current multiplication for tuning is presented. The multiplication is achieved using transistors operating in weak and moderate inversion together with floating voltage sources implemented conveniently by floating capacitors. Besides, a tuning scheme is proposed to set the transconductance parameter accurately. The resulting circuit features compactness, low voltage operation, and rail-to-rail input range. Measurement and simulation results using a 0.5um CMOS technology are presented to confirm all the circuits and strategies proposed

    Low-Voltage Ultra-Low-Power Current Conveyor Based on Quasi-Floating Gate Transistors

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    The field of low-voltage low-power CMOS technology has grown rapidly in recent years; it is an essential prerequisite particularly for portable electronic equipment and implantable medical devices due to its influence on battery lifetime. Recently, significant improvements in implementing circuits working in the low-voltage low-power area have been achieved, but circuit designers face severe challenges when trying to improve or even maintain the circuit performance with reduced supply voltage. In this paper, a low-voltage ultra-low-power current conveyor second generation CCII based on quasi-floating gate transistors is presented. The proposed circuit operates at a very low supply voltage of only ±0.4 V with rail-to-rail voltage swing capability and a total quiescent power consumption of mere 9.5 ”W. Further, the proposed circuit is not only able to process the AC signal as it's usual at quasi-floating gate transistors but also the DC which extends the applicability of the proposed circuit. In conclusion, an application example of the current-mode quadrature oscillator is presented. PSpice simulation results using the 0.18 ”m TSMC CMOS technology are included to confirm the attractive properties of the proposed circuit

    A Survey of Non-conventional Techniques for Low-voltage Low-power Analog Circuit Design

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    Designing integrated circuits able to work under low-voltage (LV) low-power (LP) condition is currently undergoing a very considerable boom. Reducing voltage supply and power consumption of integrated circuits is crucial factor since in general it ensures the device reliability, prevents overheating of the circuits and in particular prolongs the operation period for battery powered devices. Recently, non-conventional techniques i.e. bulk-driven (BD), floating-gate (FG) and quasi-floating-gate (QFG) techniques have been proposed as powerful ways to reduce the design complexity and push the voltage supply towards threshold voltage of the MOS transistors (MOST). Therefore, this paper presents the operation principle, the advantages and disadvantages of each of these techniques, enabling circuit designers to choose the proper design technique based on application requirements. As an example of application three operational transconductance amplifiers (OTA) base on these non-conventional techniques are presented, the voltage supply is only ±0.4 V and the power consumption is 23.5 ”W. PSpice simulation results using the 0.18 ”m CMOS technology from TSMC are included to verify the design functionality and correspondence with theory

    A Parallel Programmer for Non-Volatile Analog Memory Arrays

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    Since their introduction in 1967, floating-gate transistors have enjoyed widespread success as non-volatile digital memory elements in EEPROM and flash memory. In recent decades, however, a renewed interest in floating-gate transistors has focused on their viability as non-volatile analog memory, as well as programmable voltage and current sources. They have been used extensively in this capacity to solve traditional problems associated with analog circuit design, such as to correct for fabrication mismatch, to reduce comparator offset, and for amplifier auto-zeroing. They have also been used to implement adaptive circuits, learning systems, and reconfigurable systems. Despite these applications, their proliferation has been limited by complex programming procedures, which typically require high-precision test equipment and intimate knowledge of the programmer circuit to perform.;This work strives to alleviate this limitation by presenting an improved method for fast and accurate programming of floating-gate transistors. This novel programming circuit uses a digital-to-analog converter and an array of sample-and-hold circuits to facilitate fast parallel programming of floating-gate memory arrays and eliminate the need for high accuracy voltage sources. Additionally, this circuit employs a serial peripheral interface which digitizes control of the programmer, simplifying the programming procedure and enabling the implementation of software applications that obscure programming complexity from the end user. The efficient and simple parallel programming system was fabricated in a 0.5?m standard CMOS process and will be used to demonstrate the effectiveness of this new method

    Power-efficient current-mode analog circuits for highly integrated ultra low power wireless transceivers

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    In this thesis, current-mode low-voltage and low-power techniques have been applied to implement novel analog circuits for zero-IF receiver backend design, focusing on amplification, filtering and detection stages. The structure of the thesis follows a bottom-up scheme: basic techniques at device level for low voltage low power operation are proposed in the first place, followed by novel circuit topologies at cell level, and finally the achievement of new designs at system level. At device level the main contribution of this work is the employment of Floating-Gate (FG) and Quasi-Floating-Gate (QFG) transistors in order to reduce the power consumption. New current-mode basic topologies are proposed at cell level: current mirrors and current conveyors. Different topologies for low-power or high performance operation are shown, being these circuits the base for the system level designs. At system level, novel current-mode amplification, filtering and detection stages using the former mentioned basic cells are proposed. The presented current-mode filter makes use of companding techniques to achieve high dynamic range and very low power consumption with for a very wide tuning range. The amplification stage avoids gain bandwidth product achieving a constant bandwidth for different gain configurations using a non-linear active feedback network, which also makes possible to tune the bandwidth. Finally, the proposed current zero-crossing detector represents a very power efficient mixed signal detector for phase modulations. All these designs contribute to the design of very low power compact Zero-IF wireless receivers. The proposed circuits have been fabricated using a 0.5ÎŒm double-poly n-well CMOS technology, and the corresponding measurement results are provided and analyzed to validate their operation. On top of that, theoretical analysis has been done to fully explore the potential of the resulting circuits and systems in the scenario of low-power low-voltage applications.Programa Oficial de Doctorado en TecnologĂ­as de las Comunicaciones (RD 1393/2007)Komunikazioen Teknologietako Doktoretza Programa Ofiziala (ED 1393/2007

    Circuits for Analog Signal Processing Employing Unconventional Active Elements

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    DisertačnĂ­ prĂĄce se zabĂœvĂĄ zavĂĄděnĂ­m novĂœch struktur modernĂ­ch aktivnĂ­ch prvkĆŻ pracujĂ­cĂ­ch v napěƄovĂ©m, proudovĂ©m a smĂ­ĆĄenĂ©m reĆŸimu. Funkčnost a chovĂĄnĂ­ těchto prvkĆŻ byly ověƙeny prostƙednictvĂ­m SPICE simulacĂ­. V tĂ©to prĂĄci je zahrnuta ƙada simulacĂ­, kterĂ© dokazujĂ­ pƙesnost a dobrĂ© vlastnosti těchto prvkĆŻ, pƙičemĆŸ velkĂœ dĆŻraz byl kladen na to, aby tyto prvky byly schopny pracovat pƙi nĂ­zkĂ©m napĂĄjecĂ­m napětĂ­, jelikoĆŸ poptĂĄvka po pƙenosnĂœch elektronickĂœch zaƙízenĂ­ch a implantabilnĂ­ch zdravotnickĂœch pƙístrojĂ­ch stĂĄle roste. Tyto pƙístroje jsou napĂĄjeny bateriemi a k tomu, aby byla prodlouĆŸena jejich ĆŸivotnost, trend navrhovĂĄnĂ­ analogovĂœch obvodĆŻ směƙuje k stĂĄle větĆĄĂ­mu sniĆŸovĂĄnĂ­ spotƙeby a napĂĄjecĂ­ho napětĂ­. HlavnĂ­m pƙínosem tĂ©to prĂĄce je nĂĄvrh novĂœch CMOS struktur: CCII (Current Conveyor Second Generation) na zĂĄkladě BD (Bulk Driven), FG (Floating Gate) a QFG (Quasi Floating Gate); DVCC (Differential Voltage Current Conveyor) na zĂĄkladě FG, transkonduktor na zĂĄkladě novĂ© techniky BD_QFG (Bulk Driven_Quasi Floating Gate), CCCDBA (Current Controlled Current Differencing Buffered Amplifier) na zĂĄkladě GD (Gate Driven), VDBA (Voltage Differencing Buffered Amplifier) na zĂĄkladě GD a DBeTA (Differential_Input Buffered and External Transconductance Amplifier) na zĂĄkladě BD. DĂĄle je uvedeno několik zajĂ­mavĂœch aplikacĂ­ uĆŸĂ­vajĂ­cĂ­ch vĂœĆĄe jmenovanĂ© prvky. ZĂ­skanĂ© vĂœsledky simulacĂ­ odpovĂ­dajĂ­ teoretickĂœm pƙedpokladĆŻm.The dissertation thesis deals with implementing new structures of modern active elements working in voltage_, current_, and mixed mode. The functionality and behavior of these elements have been verified by SPICE simulation. Sufficient numbers of simulated plots are included in this thesis to illustrate the precise and strong behavior of those elements. However, a big attention to implement active elements by utilizing LV LP (Low Voltage Low Power) techniques is given in this thesis. This attention came from the fact that growing demand of portable electronic equipments and implantable medical devices are pushing the development towards LV LP integrated circuits because of their influence on batteries lifetime. More specifically, the main contribution of this thesis is to implement new CMOS structures of: CCII (Current Conveyor Second Generation) based on BD (Bulk Driven), FG (Floating Gate) and QFG (Quasi Floating Gate); DVCC (Differential Voltage Current Conveyor) based on FG; Transconductor based on new technique of BD_QFG (Bulk Driven_Quasi Floating Gate); CCCDBA (Current Controlled Current Differencing Buffered Amplifier) based on conventional GD (Gate Driven); VDBA (Voltage Differencing Buffered Amplifier) based on GD. Moreover, defining new active element i.e. DBeTA (Differential_Input Buffered and External Transconductance Amplifier) based on BD is also one of the main contributions of this thesis. To confirm the workability and attractive properties of the proposed circuits many applications were exhibited. The given results agree well with the theoretical anticipation.
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