Self-mixing model of terahertz rectification in a metal oxide semiconductor capacitance

Metal oxide semiconductor (MOS) capacitance within field effect transistors are of great interest in terahertz (THz) imaging, as they permit high-sensitivity, high-resolution detection of chemical species and images using integrated circuit technology. High-frequency detection based on MOS technology has long been justified using a mechanism described by the plasma wave detection theory. The present study introduces a new interpretation of this effect based on the self-mixing process that occurs in the field effect depletion region, rather than that within the channel of the transistor. The proposed model formulates the THz modulation mechanisms of the charge in the potential barrier below the oxide based on the hydrodynamic semiconductor equations solved for the small-signal approximation. This approach explains the occurrence of the self-mixing process, the detection capability of the structure and, in particular, its frequency dependence. The dependence of the rectified voltage on the bias gate voltage, substrate doping, and frequency is derived, offering a new explanation for several previous experimental results. Harmonic balance simulations are presented and compared with the model results, fully validating the model’s implementation. Thus, the proposed model substantially improves the current understanding of THz rectification in semiconductors and provides new tools for the design of detectors

Steps towards the development of an experimentally verified simulation of pool nucleate boiling on a silicon wafer with artificial sites

Nucleate boiling is a very effective heat transfer cooling process, used in numerous industrial applications. Despite intensive research over decades, a reliable model of nucleate pool boiling is still not available. This paper presents a numerical and experimental investigation of nucleate boiling from artificial nucleation sites. The numerical investigation described in the first section of the paper is carried out by a hybrid mechanistic numerical code first developed at the University of Ljubljana to simulate the temperature field in a heated stainless steel plate with a large number of nucleation sites during pool boiling of water at atmospheric pressure. It is now being redeveloped to interpret experiments on pool boiling at artificial sites on a silicon plate and as a design tool to investigate different arrangements of sites to achieve high heat fluxes. The code combines full simulation of the temperature field in the solid wall with simplified models or correlations for processes in the liquid-vapour region. The current capabilities and limitations of the code are reviewed and improvements are discussed. Examples are given of the removal of computational constraints on the activation of sites in close proximity and improvements to the bubble growth model. Preliminary simulations are presented to compare the wall conditions to be used in the experiments on silicon at Edinburgh University with the conditions in current experiments on thin metal foils at Ljubljana. An experimental rig for boiling experiments with artificial cavities on a 0.38 mm thick silicon wafer immersed in FC-72, developed at Edinburgh University, is described in the second part of the paper

Unconventional Uses of Microcantilevers as Chemical Sensors in Gas and Liquid Media

The use of microcantilevers as (bio)chemical sensors usually involves the application of a chemically sensitive layer. The coated device operates either in a static bending regime or in a dynamic flexural mode. While some of these coated devices may be operated successfully in both the static and the dynamic modes, others may suffer from certain shortcomings depending on the type of coating, the medium of operation and the sensing application. Such shortcomings include lack of selectivity and reversibility of the sensitive coating and a reduced quality factor due to the surrounding medium. In particular, the performance of microcantilevers excited in their standard out-of-plane dynamic mode drastically decreases in viscous liquid media. Moreover, the responses of coated cantilevers operating in the static bending mode are often difficult to interpret. To resolve these performance issues, the following emerging unconventional uses of microcantilevers are reviewed in this paper: (1) dynamic-mode operation without using a sensitive coating, (2) the use of in-plane vibration modes (both flexural and longitudinal) in liquid media, and (3) incorporation of viscoelastic effects in the coatings in the static mode of operation. The advantages and drawbacks of these atypical uses of microcantilevers for chemical sensing in gas and liquid environments are discussed

Full Hydrodynamic Simulation of GaAs MESFETs

A finite difference upwind discretization scheme in two dimensions is presented in detail for the transient simulation of the highly coupled non-linear partial differential equations of the full hydrodynamic model, providing thereby a practical engineering tool for improved charge carrier transport simulations at high electric fields and frequencies. The discretization scheme preserves the conservation and transportive properties of the equations. The hydrodynamic model is able to describe inertia effects which play an increasing role in different fields of micro- and optoelectronics, where simplified charge transport models like the drift-diffusion model and the energy balance model are no longer applicable. Results of extensive numerical simulations are shown for a two-dimensional MESFET device. A comparison of the hydrodynamic model to the commonly used energy balance model is given and the accuracy of the results is discussed.Comment: 18 pages, LATE

3-D Quantum Numerical Simulation of Transient Response in Multiple-Gate Nanowire MOSFETs Submitted to Heavy Ion Irradiation

International audienc

A Study on SPICE Modeling of Non-Resonant Plasmonic Terahertz Detector

Department Of Electrical EngineeringThe terahertz (sub-millimeter wave) is the frequency resource, ranging from 100 GHz ~ 10 THz band, located in the middle region of the infrared and millimeter waves in the electromagnetic spectrum. Terahertz waves has unique physical characteristics, which is transparency of radio waves and straightness of light waves, simultaneously. The terahertz wave is applied to the basic science, such as device, spectroscopy, and imaging technology. And also adjust in the applied science, such as biomedical engineering, security, environment, information and communication. Which importance already verified. In the new shape of future market is expected to be formed broadly. For this application, operating in the THz frequency detecting device essential. Recently, Current elements operating in terahertz are present, such as compound semiconductor (???-???HBT, HEMT). But, there are disadvantage to use as a high price. Therefore, research have been made of silicon based THz detector in many research groups. Silicon-based nano-technology utilizes a plasma wave transistor technology. Which is using the space-time change of the channel charge density. That causes plasma wave oscillation in the MOSFET (Metal oxide semiconductor field effect transistor) channel and this effect available MOSET operating terahertz regime beyond MOSFET cut-off frequency. So, PWT (plasma wave transistor) is available terahertz detection and oscillation. For integrated possible post processing circuit development in these of terahertz applications system, silicon based PWT compact model is essential thing. For this compact model for spice simulation beyond cut-off frequency, we consider charge time variance model which is NQS (non-quasi-static) model, not quasi-static model. For NQS model two kinds of model exist, first is RC ladder model. That is seral connect MOSFET get rid of parasitic elements. And these complex circuit making the equivalent circuit model, it called New Elmore model. For post processing circuit simulation, fast simulation speed is essential, RC ladder model has a disadvantage (for simulating each segment). In this thesis we using New Elmore model based on Non-resonant plasmonic THz detector modeling, And verified physical validity of our NQS model using the our TCAD model based on Quasi-plasma 2DEG. And we propose fast and accurate compact modelingope

Numerical Simulation of Transient Response in 3-D Multi-Channel Nanowire MOSFETs Submitted to Heavy Ion Irradiation

International audienc

A Study on SPICE Modeling of Non-Resonant Plasmonic Terahertz Detector

Department Of Electrical EngineeringThe terahertz (sub-millimeter wave) is the frequency resource, ranging from 100 GHz ~ 10 THz band, located in the middle region of the infrared and millimeter waves in the electromagnetic spectrum. Terahertz waves has unique physical characteristics, which is transparency of radio waves and straightness of light waves, simultaneously. The terahertz wave is applied to the basic science, such as device, spectroscopy, and imaging technology. And also adjust in the applied science, such as biomedical engineering, security, environment, information and communication. Which importance already verified. In the new shape of future market is expected to be formed broadly. For this application, operating in the THz frequency detecting device essential. Recently, Current elements operating in terahertz are present, such as compound semiconductor (???-???HBT, HEMT). But, there are disadvantage to use as a high price. Therefore, research have been made of silicon based THz detector in many research groups. Silicon-based nano-technology utilizes a plasma wave transistor technology. Which is using the space-time change of the channel charge density. That causes plasma wave oscillation in the MOSFET (Metal oxide semiconductor field effect transistor) channel and this effect available MOSET operating terahertz regime beyond MOSFET cut-off frequency. So, PWT (plasma wave transistor) is available terahertz detection and oscillation. For integrated possible post processing circuit development in these of terahertz applications system, silicon based PWT compact model is essential thing. For this compact model for spice simulation beyond cut-off frequency, we consider charge time variance model which is NQS (non-quasi-static) model, not quasi-static model. For NQS model two kinds of model exist, first is RC ladder model. That is seral connect MOSFET get rid of parasitic elements. And these complex circuit making the equivalent circuit model, it called New Elmore model. For post processing circuit simulation, fast simulation speed is essential, RC ladder model has a disadvantage (for simulating each segment). In this thesis we using New Elmore model based on Non-resonant plasmonic THz detector modeling, And verified physical validity of our NQS model using the our TCAD model based on Quasi-plasma 2DEG. And we propose fast and accurate compact modelingope