79,896 research outputs found
Improved wire memory matrix uses very little power
Thin-film, plated-wire memory matrix for computer applications requires little power yet has higher speed and four times greater storage capacity than ferrite-core memories of the same size
Multilayer plated wire shows promise as memory device
Multilayer plated wire memory system surpasses planar thin film memories because of its high speed, simplicity, and high output. The device consists of 5 mil Be-Cu wire plated with Ni-Fe alloy about 1 micron thick crossed orthogonally by word lines
Manganese bismuth thin film for large capacity digital memories
Material and system research defines accurate memory characteristics in regard to write, read, erase and data operations of manganese bismuth materials
Recent Advances in Thin Film Electronic Devices
This reprint is a collection of the papers from the Special Issue “Recent Advances in Thin Film Electronic Devices” in Micromachines. In this reprrint, 1 editorial and 11 original papers about recent advances in the research and development of thin film electronic devices are included. Specifically, three research fields are covered: device fundamentals (5 papers), fabrication processes (5 papers), and testing methods (1 paper). The experimental data, simulation results, and theoretical analysis presented in this reprint should benefit those researchers in flat panel displays, flat panel sensors, energy devices, memories, and so on
Physics of thin-film ferroelectric oxides
This review covers the important advances in recent years in the physics of
thin film ferroelectric oxides, the strongest emphasis being on those aspects
particular to ferroelectrics in thin film form. We introduce the current state
of development in the application of ferroelectric thin films for electronic
devices and discuss the physics relevant for the performance and failure of
these devices. Following this we cover the enormous progress that has been made
in the first principles computational approach to understanding ferroelectrics.
We then discuss in detail the important role that strain plays in determining
the properties of epitaxial thin ferroelectric films. Finally, we look at the
emerging possibilities for nanoscale ferroelectrics, with particular emphasis
on ferroelectrics in non conventional nanoscale geometries.Comment: This is an invited review for Reviews of Modern Physics. We welcome
feedback and will endeavour to incorporate comments received promptly into
the final versio
Printed dose-recording tag based on organic complementary circuits and ferroelectric nonvolatile memories.
We have demonstrated a printed electronic tag that monitors time-integrated sensor signals and writes to nonvolatile memories for later readout. The tag is additively fabricated on flexible plastic foil and comprises a thermistor divider, complementary organic circuits, and two nonvolatile memory cells. With a supply voltage below 30 V, the threshold temperatures can be tuned between 0 °C and 80 °C. The time-temperature dose measurement is calibrated for minute-scale integration. The two memory bits are sequentially written in a thermometer code to provide an accumulated dose record
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