Strategies for enhancing DC gain and settling performance of amplifiers

The operational amplifier (op amp) is one of the most widely used and important building blocks in analog circuit design. High gain and high speed are two important properties of op amps because they determine the settling behavior of the op amps. As supply voltages decrease, the realization of high gain amplifiers with large Gain-Bandwidth-Products (GBW) has become challenging. The major focus in this dissertation is on the negative output impedance gain enhancement technique. The negative impedance gain enhancement technique offers potential for achieving very high gain and energy-efficient fast settling and is low-voltage compatible. Misconceptions that have limited the practical adoption of this gain enhancement technique are discussed. A new negative conductance gain enhancement technique was proposed. The proposed circuit generates a negative conductance with matching requirements for achieving very high DC gain that are less stringent than those for existing -g m gain enhancement schemes. The proposed circuit has potential for precise digital control of a very large DC gain. A prototype fully differential CMOS operational amplifier was designed and fabricated based on the proposed gain enhancement technique. Experimental results which showed a DC gain of 85dB and an output swing of 876mVp-p validated the fundamental performance characteristics of this technique. In a separate section, a new amplifier architecture with bandpass feedforward compensation is presented. It is shown that a bandpass feedforward path can be used to substantially extend the unity-gain-frequency of an operational amplifier. Simulation results predict significant improvements in rise time and settling performance and show that the bandpass compensation scheme is reasonably robust. In the final section, a new technique for asynchronous data recovery based upon using a delay line in the incoming data path is introduced. The proposed data recovery system is well suited for tight tolerance channels and coding systems supporting standards that limit the maximum number of consecutive 0\u27s and 1\u27s in a data stream. This system does not require clock recovery, suffers no loss of data during acquisition, has a reduced sensitivity to jitter in the incoming data and does not exhibit jitter enhancement associated with VCO tracking in a PLL

A 0.1–5.0 GHz flexible SDR receiver with digitally assisted calibration in 65 nm CMOS

© 2017 Elsevier Ltd. All rights reserved.A 0.1–5.0 GHz flexible software-defined radio (SDR) receiver with digitally assisted calibration is presented, employing a zero-IF/low-IF reconfigurable architecture for both wideband and narrowband applications. The receiver composes of a main-path based on a current-mode mixer for low noise, a high linearity sub-path based on a voltage-mode passive mixer for out-of-band rejection, and a harmonic rejection (HR) path with vector gain calibration. A dual feedback LNA with “8” shape nested inductor structure, a cascode inverter-based TCA with miller feedback compensation, and a class-AB full differential Op-Amp with Miller feed-forward compensation and QFG technique are proposed. Digitally assisted calibration methods for HR, IIP2 and image rejection (IR) are presented to maintain high performance over PVT variations. The presented receiver is implemented in 65 nm CMOS with 5.4 mm2 core area, consuming 9.6–47.4 mA current under 1.2 V supply. The receiver main path is measured with +5 dB m/+5dBm IB-IIP3/OB-IIP3 and +61dBm IIP2. The sub-path achieves +10 dB m/+18dBm IB-IIP3/OB-IIP3 and +62dBm IIP2, as well as 10 dB RF filtering rejection at 10 MHz offset. The HR-path reaches +13 dB m/+14dBm IB-IIP3/OB-IIP3 and 62/66 dB 3rd/5th-order harmonic rejection with 30–40 dB improvement by the calibration. The measured sensitivity satisfies the requirements of DVB-H, LTE, 802.11 g, and ZigBee.Peer reviewedFinal Accepted Versio

High-resolution width-modulated pulse rebalance electronics for strapdown gyroscopes and accelerometers

Three different rebalance electronic loops were designed, implemented, and evaluated. The loops were width-modulated binary types using a 614.4 kHz keying signal; they were developed to accommodate the following three inertial sensors with the indicated resolution values: (1) Kearfott 2412 accelerometer - resolution = 260 micro-g/data pulse, (2) Honeywell GG334 gyroscope - resolution = 3.9 milli-arc-sec/data pulse, (3) Kearfott 2401-009 accelerometer - resolution = 144 milli-g/data pulse. Design theory, details of the design implementation, and experimental results for each loop are presented

A wide dynamic range high-q high-frequency bandpass filter with an automatic quality factor tuning scheme

An 80 MHz bandpass filter with a tunable quality factor of 16∼44 using an improved transconductor circuit is presented. A noise optimized biquad structure for high-Q, high- frequency bandpass filter is proposed. The quality factor of the filter is tuned using a new quality factor locked loop algorithm. It was shown that a second-order quality factor locked loop is necessary and sufficient to tune the quality factor of a bandpass filter with zero steady state error. The accuracy, mismatch, and sensitivty analysis of the new tuning scheme was performed and analyzed. Based on the proposed noise optimized filter structure and new quality factor tuning scheme, a biquad filter was designed and fabricated in 0.25 μm BiCMOS process. The measured results show that the biquad filter achieves a SNR of 45 dB at IMD of 40 dB. The P-1dB compression point and IIP3 of the filter are -10 dBm and -2.68 dBm, respectively. The proposed biquad filter and quality factor tuning scheme consumes 58mW and 13 mW of power at 3.3 V supply.Ph.D.Committee Chair: Allen Phillip; Committee Member: Hasler Paul; Committee Member: Keezer David; Committee Member: Kenny James; Committee Member: Pan Ronghu

Saw-Less radio receivers in CMOS

Smartphones play an essential role in our daily life. Connected to the internet, we can easily keep in touch with family and friends, even if far away, while ever more apps serve us in numerous ways. To support all of this, higher data rates are needed for ever more wireless users, leading to a very crowded radio frequency spectrum. To achieve high spectrum efficiency while reducing unwanted interference, high-quality band-pass filters are needed. Piezo-electrical Surface Acoustic Wave (SAW) filters are conventionally used for this purpose, but such filters need a dedicated design for each new band, are relatively bulky and also costly compared to integrated circuit chips. Instead, we would like to integrate the filters as part of the entire wireless transceiver with digital smartphone hardware on CMOS chips. The research described in this thesis targets this goal. It has recently been shown that N-path filters based on passive switched-RC circuits can realize high-quality band-select filters on CMOS chips, where the center frequency of the filter is widely tunable by the switching-frequency. As CMOS downscaling following Moore’s law brings us lower clock-switching power, lower switch on-resistance and more compact metal-to-metal capacitors, N-path filters look promising. This thesis targets SAW-less wireless receiver design, exploiting N-path filters. As SAW-filters are extremely linear and selective, it is very challenging to approximate this performance with CMOS N-path filters. The research in this thesis proposes and explores several techniques for extending the linearity and enhancing the selectivity of N-path switched-RC filters and mixers, and explores their application in CMOS receiver chip designs. First the state-of-the-art in N-path filters and mixer-first receivers is reviewed. The requirements on the main receiver path are examined in case SAW-filters are removed or replaced by wideband circulators. The feasibility of a SAW-less Frequency Division Duplex (FDD) radio receiver is explored, targeting extreme linearity and compression Irequirements. A bottom-plate mixing technique with switch sharing is proposed. It improves linearity by keeping both the gate-source and gate-drain voltage swing of the MOSFET-switches rather constant, while halving the switch resistance to reduce voltage swings. A new N-path switch-RC filter stage with floating capacitors and bottom-plate mixer-switches is proposed to achieve very high linearity and a second-order voltage-domain RF-bandpass filter around the LO frequency. Extra out-of-band (OOB) rejection is implemented combined with V-I conversion and zero-IF frequency down-conversion in a second cross-coupled switch-RC N-path stage. It offers a low-ohmic high-linearity current path for out-of-band interferers. A prototype chip fabricated in a 28 nm CMOS technology achieves an in-band IIP3 of +10 dBm , IIP2 of +42 dBm, out-of-band IIP3 of +44 dBm, IIP2 of +90 dBm and blocker 1-dB gain-compression point of +13 dBm for a blocker frequency offset of 80 MHz. At this offset frequency, the measured desensitization is only 0.6 dB for a 0-dBm blocker, and 3.5 dB for a 10-dBm blocker at 0.7 GHz operating frequency (i.e. 6 and 9 dB blocker noise figure). The chip consumes 38-96 mW for operating frequencies of 0.1-2 GHz and occupies an active area of 0.49 mm2. Next, targeting to cover all frequency bands up to 6 GHz and achieving a noise figure lower than 3 dB, a mixer-first receiver with enhanced selectivity and high dynamic range is proposed. Capacitive negative feedback across the baseband amplifier serves as a blocker bypassing path, while an extra capacitive positive feedback path offers further blocker rejection. This combination of feedback paths synthesizes a complex pole pair at the input of the baseband amplifier, which is up-converted to the RF port to obtain steeper RF-bandpass filter roll-off than the conventional up-converted real pole and reduced distortion. This thesis explains the circuit principle and analyzes receiver performance. A prototype chip fabricated in 45 nm Partially Depleted Silicon on Insulator (PDSOI) technology achieves high linearity (in-band IIP3 of +3 dBm, IIP2 of +56 dBm, out-of-band IIP3 = +39 dBm, IIP2 = +88 dB) combined with sub-3 dB noise figure. Desensitization due to a 0-dBm blocker is only 2.2 dB at 1.4 GHz operating frequency. IIFinally, to demonstrate the performance of the implemented blocker-tolerant receiver chip designs, a test setup with a real mobile phone is built to verify the sensitivity of the receiver chip for different practical blocking scenarios

Metodologia Per la Caratterizzazione di amplificatori a basso rumore per UMTS

In questo lavoro si presenta una metodologia di progettazione elettronica a livello di sistema, affrontando il problema della caratterizzazione dello spazio di progetto dell' amplificatore a basso rumore costituente il primo stadio di un front end a conversione diretta per UMTS realizzato in tecnologia CMOS con lunghezza di canale .18u. La metodologia è sviluppata al fine di valutare in modo quantititativo le specifiche ottime di sistema per il front-end stesso e si basa sul concetto di Piattaforma Analogica, che prevede la costruzione di un modello di prestazioni per il blocco analogico basato su campionamento statistico di indici di prestazioni del blocco stesso, misurati tramite simulazione di dimensionamenti dei componenti attivi e passivi soddisfacenti un set di equazioni specifico della topologia circuitale. Gli indici di prestazioni vengono successivamente ulizzati per parametrizzare modelli comportamentali utilizzati nelle fasi di ottimizzazione a livello di sistema. Modelli comportamentali atti a rappresentare i sistemi RF sono stati pertanto studiati per ottimizzare la scelta delle metriche di prestazioni. L'ottimizzazione dei set di equazioni atti a selezionare le configurazione di interesse per il campionamento ha al tempo stesso richiesto l'approfondimento dei modelli di dispositivi attivi validi in tutte le regioni di funzionamento, e lo studio dettagliato della progettazione degli amplificatori a basso rumore basati su degenerazione induttiva. Inoltre, il problema della modellizzazione a livello di sistema degli effetti della comunicazione tra LNA e Mixer è stato affrontato proponendo e analizzando diverse soluzioni. Il lavoro ha permesso di condurre un'ottimizzazione del front-end UMTS, giungendo a specifiche ottime a livello di sistema per l'amplificatore stesso

Analysis and Design Methodologies for Switched-Capacitor Filter Circuits in Advanced CMOS Technologies

Analog filters are an extremely important block in several electronic systems, such as RF transceivers, data acquisition channels, or sigma-delta modulators. They allow the suppression of unwanted frequencies bands in a signal, improving the system’s performance. These blocks are typically implemented using active RC filters, gm-C filters, or switched-capacitor (SC) filters. In modern deep-submicron CMOS technologies, the transistors intrinsic gain is small and has a large variability, making the design of moderate and high-gain amplifiers, used in the implementation of filter blocks, extremely difficult. To avoid this difficulty, in the case of SC filters, the opamp can be replaced with a voltage buffer or a low-gain amplifier (< 2), simplifying the amplifier’s design and making it easier to achieve higher bandwidths, for the same power. However, due to the loss of the virtual ground node, the circuit becomes sensitive to the effects of parasitic capacitances, which effect needs to be compensated during the design process. This thesis addresses the task of optimizing SC filters (mainly focused on implementations using low-gain amplifiers), helping designers with the complex task of designing high performance SC filters in advanced CMOS technologies. An efficient optimization methodology is introduced, based on hybrid cost functions (equation-based/simulation-based) and using genetic algorithms. The optimization software starts by using equations in the cost function to estimate the filter’s frequency response reducing computation time, when compared with the electrical simulation of the circuit’s impulse response. Using equations, the frequency response can be quickly computed (< 1 s), allowing the use of larger populations in the genetic algorithm (GA) to cover the entire design space. Once the specifications are met, the population size is reduced and the equation-based design is fine-tuned using the more computationally intensive, but more accurate, simulation-based cost function, allowing to accurately compensate the parasitic capacitances, which are harder to estimate using equations. With this hybrid approach, it is possible to obtain the final optimized design within a reasonable amount of computation time. Two methods are described for the estimation of the filter’s frequency response. The first method is hierarchical in nature where, in the first step, the frequency response is optimized using the circuit’s ideal transfer function. The following steps are used to optimize circuits, at transistor level, to replace the ideal blocks (amplifier and switches) used in the first step, while compensating the effects of the circuit’s parasitic capacitances in the ideal design. The second method uses a novel efficient numerical methodology to obtain the frequency response of SC filters, based on the circuit’s first-order differential equations. The methodology uses a non-hierarchical approach, where the non-ideal effects of the transistors (in the amplifier and in the switches) are taken into consideration, allowing the accurate computation of the frequency response, even in the case of incomplete settling in the SC branches. Several design and optimization examples are given to demonstrate the performance of the proposed methods. The prototypes of a second order programmable bandpass SC filter and a 50 Hz notch SC filter have been designed in UMC 130 nm CMOS technology and optimized using the proposed optimization software with a supply voltage of 0.9 V. The bandpass SC filter has a total power consumption of 249 uW. The filter’s central frequency can be tuned between 3.9 kHz and 7.1 kHz, the gain between -6.4 dB and 12.6 dB, and the quality factor between 0.9 and 6.9. Depending on the bit configuration, the circuit’s THD is between -54.7 dB and -61.7 dB. The 50 Hz notch SC filter has a total power consumption of 273 uW. The transient simulation of the circuit’s extracted view (C+CC) shows an attenuation of 52.3 dB in the 50 Hz interference and that the desired 5 kHz signal has a THD of -92.3 dB

Analysis and design of wideband voltage controlled oscillators using self-oscillating active inductors.

Voltage controlled oscillators (VCOs) are essential components of RF circuits used in transmitters and receivers as sources of carrier waves with variable frequencies. This, together with a rapid development of microelectronic circuits, led to an extensive research on integrated implementations of the oscillator circuits. One of the known approaches to oscillator design employs resonators with active inductors electronic circuits simulating the behavior of passive inductors using only transistors and capacitors. Such resonators occupy only a fraction of the silicon area necessary for a passive inductor, and thus allow to use chip area more eectively. The downsides of the active inductor approach include: power consumption and noise introduced by transistors. This thesis presents a new approach to active inductor oscillator design using selfoscillating active inductor circuits. The instability necessary to start oscillations is provided by the use of a passive RC network rather than a power consuming external circuit employed in the standard oscillator approach. As a result, total power consumption of the oscillator is improved. Although, some of the active inductors with RC circuits has been reported in the literature, there has been no attempt to utilise this technique in wideband voltage controlled oscillator design. For this reason, the dissertation presents a thorough investigation of self-oscillating active inductor circuits, providing a new set of design rules and related trade-os. This includes: a complete small signal model of the oscillator, sensitivity analysis, large signal behavior of the circuit and phase noise model. The presented theory is conrmed by extensive simulations of wideband CMOS VCO circuit for various temperatures and process variations. The obtained results prove that active inductor oscillator performance is obtained without the use of standard active compensation circuits. Finally, the concept of self-oscillating active inductor has been employed to simple and fast OOK (On-Off Keying) transmitter showing energy eciency comparable to the state of the art implementations reported in the literature