Placement for fast and reliable through-silicon-via (TSV) based 3D-IC layouts

The objective of this research is to explore the feasibility of addressing the major performance and reliability problems or issues, such as wirelength, stress-induced carrier mobility variation, temperature, and quality trade-offs, found in three-dimensional integrated circuits (3D ICs) that use through-silicon vias (TSVs) at placement stage. Four main works that support this goal are included. In the first work, wirelength of TSV-based 3D ICs is the main focus. In the second work, stress-induced carrier mobility variation in TSV-based 3D ICs is examined. In the third work, temperature inside TSV-based 3D ICs is investigated. In the final work, the quality trade-offs of TSV-based 3D-IC designs are explored. In the first work, a force-directed, 3D, and gate-level placement algorithm that efficiently handles TSVs is developed. The experiments based on synthesized benchmarks indicate that the developed algorithm helps generate GDSII layouts of 3D-IC designs that are optimized in terms of wirelength. In addition, the impact of TSVs on other physical aspects of 3D-IC designs is also studied by analyzing the GDSII layouts. In the second work, the model for carrier mobility variation caused by TSV and STI stresses is developed as well as the timing analysis flow considering the stresses. The impact of TSV and STI stresses on carrier mobility variation and performance of 3D ICs is studied. Furthermore, a TSV-stress-driven, force-directed, and 3D placement algorithm is developed. It exploits carrier mobility variation, caused by stress around TSVs after fabrication, to improve the timing and area objectives during placement. In addition, the impact of keep-out zone (KOZ) around TSVs on stress, carrier mobility variation, area, wirelength, and performance of 3D ICs is studied. In the third work, two temperature-aware global placement algorithms are developed. They exploit die-to-die thermal coupling in 3D ICs to improve temperature during placement. In addition, a framework used to evaluate the results from temperature-aware global placements is developed. The main component of the framework is a GDSII-level thermal analysis that considers all structures inside a TSV-based 3D IC while computing temperature. The developed placers are compared with several state-of-the-art placers published in recent literature. The experimental results indicate that the developed algorithms help improve the temperature of 3D ICs effectively. In the final work, three block-level design styles for TSV-based die-to-wafer bonded 3D ICs are discussed. Several 3D-IC layouts in the three styles are manually designed. The main difference among these layouts is the position of TSVs. Finally, the area, wirelength, timing, power, temperature, and mechanical stress of all layouts are compared to explore the trade-offs of layout quality.PhDCommittee Chair: Lim, Sung Kyu; Committee Member: Bakir, Muhannad; Committee Member: Kim, Hyesoon; Committee Member: Mukhopadhyay, Saibal; Committee Member: Swaminathan, Madhava

Characterization Of Thermal Stresses And Plasticity In Through-Silicon Via Structures For Three-Dimensional Integration

Through-silicon via (TSV) is a critical element connecting stacked dies in three-dimensional (3D) integration. The mismatch of thermal expansion coefficients between the Cu via and Si can generate significant stresses in the TSV structure to cause reliability problems. In this study, the thermal stress in the TSV structure was measured by the wafer curvature method and its unique stress characteristics were compared to that of a Cu thin film structure. The thermo-mechanical characteristics of the Cu TSV structure were correlated to microstructure evolution during thermal cycling and the local plasticity in Cu in a triaxial stress state. These findings were confirmed by microstructure analysis of the Cu vias and finite element analysis (FEA) of the stress characteristics. In addition, the local plasticity and deformation in and around individual TSVs were measured by synchrotron x-ray microdiffraction to supplement the wafer curvature measurements. The importance and implication of the local plasticity and residual stress on TSV reliabilities are discussed for TSV extrusion and device keep-out zone (KOZ).Microelectronics Research Cente

Methodology for analysis of TSV stress induced transistor variation and circuit performance

As continued scaling becomes increasingly difficult, 3D integration with through silicon vias (TSVs) has emerged as a viable solution to achieve higher bandwidth and power efficiency. Mechanical stress induced by thermal mismatch between TSVs and the silicon bulk arising during wafer fabrication and 3D integration, is a key constraint. In this work, we propose a complete flow to characterize the influence of TSV stress on transistor and circuit performance. First, we analyze the thermal stress contour near the silicon surface with single and multiple TSVs through both finite element analysis (FEA) and linear superposition methods. Then, the biaxial stress is converted to mobility and threshold voltage variations depending on transistor type and geometric relation between TSVs and transistors. Next, we propose an efficient algorithm to calculate circuit variation corresponding to TSV stress based on a grid partition approach. Finally, we discuss a TSV pattern optimization strategy, and employ a series of 17-stage ring oscillators using 40 nm CMOS technology as a test case for the proposed approach

Electromigration modeling and layout optimization for advanced VLSI

textElectromigration (EM) is a critical problem for interconnect reliability in advanced VLSI design. Because EM is a strong function of current density, a smaller cross-sectional area of interconnects can degrade the EM-related lifetime of IC, which is expected to become more severe in future technology nodes. Moreover, as EM is governed by various factors such as temperature, material property, geometrical shape, and mechanical stress, different interconnect structures can have distinct EM issues and solutions to mitigate them. For example, one of the most prominent technologies, die stacking technology of three-dimensional (3D) ICs, can have different EM problems from that of planer ICs, due to their unique interconnects such as through-silicon vias (TSVs). This dissertation investigates EM in various interconnect structures, and applies the EM models to optimize IC layout. First, modeling of EM is developed for chip-level interconnects, such as wires, local vias, TSVs, and multi-scale vias (MSVs). Based on the models, fast and accurate EM-prediction methods are proposed for the chip-level designs. After that, by utilizing the EM-prediction methods, the layout optimization methods are suggested, such as EM-aware routing for 3D ICs and EM-aware redundant via insertion for the future technology nodes in VLSI. Experimental results show that the proposed EM modeling approaches enable fast and accurate EM evaluation for chip design, and the EM-aware layout optimization methods improve EM-robustness of advanced VLSI designs.Electrical and Computer Engineerin

Investigation into yield and reliability enhancement of TSV-based three-dimensional integration circuits

Three dimensional integrated circuits (3D ICs) have been acknowledged as a promising technology to overcome the interconnect delay bottleneck brought by continuous CMOS scaling. Recent research shows that through-silicon-vias (TSVs), which act as vertical links between layers, pose yield and reliability challenges for 3D design. This thesis presents three original contributions.The first contribution presents a grouping-based technique to improve the yield of 3D ICs under manufacturing TSV defects, where regular and redundant TSVs are partitioned into groups. In each group, signals can select good TSVs using rerouting multiplexers avoiding defective TSVs. Grouping ratio (regular to redundant TSVs in one group) has an impact on yield and hardware overhead. Mathematical probabilistic models are presented for yield analysis under the influence of independent and clustering defect distributions. Simulation results using MATLAB show that for a given number of TSVs and TSV failure rate, careful selection of grouping ratio results in achieving 100% yield at minimal hardware cost (number of multiplexers and redundant TSVs) in comparison to a design that does not exploit TSV grouping ratios. The second contribution presents an efficient online fault tolerance technique based on redundant TSVs, to detect TSV manufacturing defects and address thermal-induced reliability issue. The proposed technique accounts for both fault detection and recovery in the presence of three TSV defects: voids, delamination between TSV and landing pad, and TSV short-to-substrate. Simulations using HSPICE and ModelSim are carried out to validate fault detection and recovery. Results show that regular and redundant TSVs can be divided into groups to minimise area overhead without affecting the fault tolerance capability of the technique. Synthesis results using 130-nm design library show that 100% repair capability can be achieved with low area overhead (4% for the best case). The last contribution proposes a technique with joint consideration of temperature mitigation and fault tolerance without introducing additional redundant TSVs. This is achieved by reusing spare TSVs that are frequently deployed for improving yield and reliability in 3D ICs. The proposed technique consists of two steps: TSV determination step, which is for achieving optimal partition between regular and spare TSVs into groups; The second step is TSV placement, where temperature mitigation is targeted while optimizing total wirelength and routing difference. Simulation results show that using the proposed technique, 100% repair capability is achieved across all (five) benchmarks with an average temperature reduction of 75.2? (34.1%) (best case is 99.8? (58.5%)), while increasing wirelength by a small amount

Thermo-mechanical stress measurement and analysis in three dimensional interconnect structures

Three-dimensional (3-D) integration is effective to overcome the wiring limit imposed on device density and performance with continued scaling. The application of TSV (Through-Silicon Via) is essential for 3D IC integration. TSVs are embedded into the silicon substrate to form vertical, electrical connections between stacked IC chips. However, due to the large CTE mismatch between Silicon and Copper, thermal stresses are induced by various thermal histories from the device processing, and they have caused serious concerns regarding the thermal-mechanical reliability. Firstly, a semi-analytic approach is introduced to understand stress distributions in TSV structures. This is followed by application of finite element analysis for more accurate prediction of stress behavior according to the real geometry of the sample. The conventional Raman method is used to measure the linear combination of in-plane stress components near silicon top surface Secondly, the limitation of conventional Raman method is discussed: only certain linear combination of in-plane stress, instead of separate value for each stress components, can be obtained. Two different kinds of innovative Raman measurements have been developed and employed to study the normal stress components separately. Both of them take advantages of different laser polarization profiles to resolve the normal stress components separately based on experimental data. The top-down Raman measurements utilize so called “high NA effect” to obtain additional information, and can resolve all 3 normal stress components. Independent bending beam experiments are used to validate the results from cross-section Raman measurement on the same sample. The correlation between top-down Raman measurement and cross-section Raman measurement are investigated as well. Lastly, as a typical example of 3D IC package, a stack-die memory package is presented. Finite element analysis combined with cross-section Raman measurement and high resolution moiré interferometry were employed to investigate the thermal-mechanical reliability and chip-package interaction of the stack-die memory structure.Physic

Cross-Layer Rapid Prototyping and Synthesis of Application-Specific and Reconfigurable Many-accelerator Platforms

Technological advances of recent years laid the foundation consolidation of informatisationof society, impacting on economic, political, cultural and socialdimensions. At the peak of this realization, today, more and more everydaydevices are connected to the web, giving the term ”Internet of Things”. The futureholds the full connection and interaction of IT and communications systemsto the natural world, delimiting the transition to natural cyber systems and offeringmeta-services in the physical world, such as personalized medical care, autonomoustransportation, smart energy cities etc. . Outlining the necessities of this dynamicallyevolving market, computer engineers are required to implement computingplatforms that incorporate both increased systemic complexity and also cover awide range of meta-characteristics, such as the cost and design time, reliabilityand reuse, which are prescribed by a conflicting set of functional, technical andconstruction constraints. This thesis aims to address these design challenges bydeveloping methodologies and hardware/software co-design tools that enable therapid implementation and efficient synthesis of architectural solutions, which specifyoperating meta-features required by the modern market. Specifically, this thesispresents a) methodologies to accelerate the design flow for both reconfigurableand application-specific architectures, b) coarse-grain heterogeneous architecturaltemplates for processing and communication acceleration and c) efficient multiobjectivesynthesis techniques both at high abstraction level of programming andphysical silicon level.Regarding to the acceleration of the design flow, the proposed methodologyemploys virtual platforms in order to hide architectural details and drastically reducesimulation time. An extension of this framework introduces the systemicco-simulation using reconfigurable acceleration platforms as co-emulation intermediateplatforms. Thus, the development cycle of a hardware/software productis accelerated by moving from a vertical serial flow to a circular interactive loop.Moreover the simulation capabilities are enriched with efficient detection and correctiontechniques of design errors, as well as control methods of performancemetrics of the system according to the desired specifications, during all phasesof the system development. In orthogonal correlation with the aforementionedmethodological framework, a new architectural template is proposed, aiming atbridging the gap between design complexity and technological productivity usingspecialized hardware accelerators in heterogeneous systems-on-chip and networkon-chip platforms. It is presented a novel co-design methodology for the hardwareaccelerators and their respective programming software, including the tasks allocationto the available resources of the system/network. The introduced frameworkprovides implementation techniques for the accelerators, using either conventionalprogramming flows with hardware description language or abstract programmingmodel flows, using techniques from high-level synthesis. In any case, it is providedthe option of systemic measures optimization, such as the processing speed,the throughput, the reliability, the power consumption and the design silicon area.Finally, on addressing the increased complexity in design tools of reconfigurablesystems, there are proposed novel multi-objective optimization evolutionary algo-rithms which exploit the modern multicore processors and the coarse-grain natureof multithreaded programming environments (e.g. OpenMP) in order to reduce theplacement time, while by simultaneously grouping the applications based on theirintrinsic characteristics, the effectively explore the design space effectively.The efficiency of the proposed architectural templates, design tools and methodologyflows is evaluated in relation to the existing edge solutions with applicationsfrom typical computing domains, such as digital signal processing, multimedia andarithmetic complexity, as well as from systemic heterogeneous environments, suchas a computer vision system for autonomous robotic space navigation and manyacceleratorsystems for HPC and workstations/datacenters. The results strengthenthe belief of the author, that this thesis provides competitive expertise to addresscomplex modern - and projected future - design challenges.Οι τεχνολογικές εξελίξεις των τελευταίων ετών έθεσαν τα θεμέλια εδραίωσης της πληροφοριοποίησης της κοινωνίας, επιδρώντας σε οικονομικές,πολιτικές, πολιτιστικές και κοινωνικές διαστάσεις. Στο απόγειο αυτής τη ςπραγμάτωσης, σήμερα, ολοένα και περισσότερες καθημερινές συσκευές συνδέονται στο παγκόσμιο ιστό, αποδίδοντας τον όρο «Ίντερνετ των πραγμάτων».Το μέλλον επιφυλάσσει την πλήρη σύνδεση και αλληλεπίδραση των συστημάτων πληροφορικής και επικοινωνιών με τον φυσικό κόσμο, οριοθετώντας τη μετάβαση στα συστήματα φυσικού κυβερνοχώρου και προσφέροντας μεταυπηρεσίες στον φυσικό κόσμο όπως προσωποποιημένη ιατρική περίθαλψη, αυτόνομες μετακινήσεις, έξυπνες ενεργειακά πόλεις κ.α. . Σκιαγραφώντας τις ανάγκες αυτής της δυναμικά εξελισσόμενης αγοράς, οι μηχανικοί υπολογιστών καλούνται να υλοποιήσουν υπολογιστικές πλατφόρμες που αφενός ενσωματώνουν αυξημένη συστημική πολυπλοκότητα και αφετέρου καλύπτουν ένα ευρύ φάσμα μεταχαρακτηριστικών, όπως λ.χ. το κόστος σχεδιασμού, ο χρόνος σχεδιασμού, η αξιοπιστία και η επαναχρησιμοποίηση, τα οποία προδιαγράφονται από ένα αντικρουόμενο σύνολο λειτουργικών, τεχνολογικών και κατασκευαστικών περιορισμών. Η παρούσα διατριβή στοχεύει στην αντιμετώπιση των παραπάνω σχεδιαστικών προκλήσεων, μέσω της ανάπτυξης μεθοδολογιών και εργαλείων συνσχεδίασης υλικού/λογισμικού που επιτρέπουν την ταχεία υλοποίηση καθώς και την αποδοτική σύνθεση αρχιτεκτονικών λύσεων, οι οποίες προδιαγράφουν τα μετα-χαρακτηριστικά λειτουργίας που απαιτεί η σύγχρονη αγορά. Συγκεκριμένα, στα πλαίσια αυτής της διατριβής, παρουσιάζονται α) μεθοδολογίες επιτάχυνσης της ροής σχεδιασμού τόσο για επαναδιαμορφούμενες όσο και για εξειδικευμένες αρχιτεκτονικές, β) ετερογενή αδρομερή αρχιτεκτονικά πρότυπα επιτάχυνσης επεξεργασίας και επικοινωνίας και γ) αποδοτικές τεχνικές πολυκριτηριακής σύνθεσης τόσο σε υψηλό αφαιρετικό επίπεδο προγραμματισμού,όσο και σε φυσικό επίπεδο πυριτίου.Αναφορικά προς την επιτάχυνση της ροής σχεδιασμού, προτείνεται μια μεθοδολογία που χρησιμοποιεί εικονικές πλατφόρμες, οι οποίες αφαιρώντας τις αρχιτεκτονικές λεπτομέρειες καταφέρνουν να μειώσουν σημαντικά το χρόνο εξομοίωσης. Παράλληλα, εισηγείται η συστημική συν-εξομοίωση με τη χρήση επαναδιαμορφούμενων πλατφορμών, ως μέσων επιτάχυνσης. Με αυτόν τον τρόπο, ο κύκλος ανάπτυξης ενός προϊόντος υλικού, μετατεθειμένος από την κάθετη σειριακή ροή σε έναν κυκλικό αλληλεπιδραστικό βρόγχο, καθίσταται ταχύτερος, ενώ οι δυνατότητες προσομοίωσης εμπλουτίζονται με αποδοτικότερες μεθόδους εντοπισμού και διόρθωσης σχεδιαστικών σφαλμάτων, καθώς και μεθόδους ελέγχου των μετρικών απόδοσης του συστήματος σε σχέση με τις επιθυμητές προδιαγραφές, σε όλες τις φάσεις ανάπτυξης του συστήματος. Σε ορθογώνια συνάφεια με το προαναφερθέν μεθοδολογικό πλαίσιο, προτείνονται νέα αρχιτεκτονικά πρότυπα που στοχεύουν στη γεφύρωση του χάσματος μεταξύ της σχεδιαστικής πολυπλοκότητας και της τεχνολογικής παραγωγικότητας, με τη χρήση συστημάτων εξειδικευμένων επιταχυντών υλικού σε ετερογενή συστήματα-σε-ψηφίδα καθώς και δίκτυα-σε-ψηφίδα. Παρουσιάζεται κατάλληλη μεθοδολογία συν-σχεδίασης των επιταχυντών υλικού και του λογισμικού προκειμένου να αποφασισθεί η κατανομή των εργασιών στους διαθέσιμους πόρους του συστήματος/δικτύου. Το μεθοδολογικό πλαίσιο προβλέπει την υλοποίηση των επιταχυντών είτε με συμβατικές μεθόδους προγραμματισμού σε γλώσσα περιγραφής υλικού είτε με αφαιρετικό προγραμματιστικό μοντέλο με τη χρήση τεχνικών υψηλού επιπέδου σύνθεσης. Σε κάθε περίπτωση, δίδεται η δυνατότητα στο σχεδιαστή για βελτιστοποίηση συστημικών μετρικών, όπως η ταχύτητα επεξεργασίας, η ρυθμαπόδοση, η αξιοπιστία, η κατανάλωση ενέργειας και η επιφάνεια πυριτίου του σχεδιασμού. Τέλος, προκειμένου να αντιμετωπισθεί η αυξημένη πολυπλοκότητα στα σχεδιαστικά εργαλεία επαναδιαμορφούμενων συστημάτων, προτείνονται νέοι εξελικτικοί αλγόριθμοι πολυκριτηριακής βελτιστοποίησης, οι οποίοι εκμεταλλευόμενοι τους σύγχρονους πολυπύρηνους επεξεργαστές και την αδρομερή φύση των πολυνηματικών περιβαλλόντων προγραμματισμού (π.χ. OpenMP), μειώνουν το χρόνο επίλυσης του προβλήματος της τοποθέτησης των λογικών πόρων σε φυσικούς,ενώ ταυτόχρονα, ομαδοποιώντας τις εφαρμογές βάση των εγγενών χαρακτηριστικών τους, διερευνούν αποτελεσματικότερα το χώρο σχεδίασης.Η αποδοτικότητά των προτεινόμενων αρχιτεκτονικών προτύπων και μεθοδολογιών επαληθεύτηκε σε σχέση με τις υφιστάμενες λύσεις αιχμής τόσο σε αυτοτελής εφαρμογές, όπως η ψηφιακή επεξεργασία σήματος, τα πολυμέσα και τα προβλήματα αριθμητικής πολυπλοκότητας, καθώς και σε συστημικά ετερογενή περιβάλλοντα, όπως ένα σύστημα όρασης υπολογιστών για αυτόνομα διαστημικά ρομποτικά οχήματα και ένα σύστημα πολλαπλών επιταχυντών υλικού για σταθμούς εργασίας και κέντρα δεδομένων, στοχεύοντας εφαρμογές υψηλής υπολογιστικής απόδοσης (HPC). Τα αποτελέσματα ενισχύουν την πεποίθηση του γράφοντα, ότι η παρούσα διατριβή παρέχει ανταγωνιστική τεχνογνωσία για την αντιμετώπιση των πολύπλοκων σύγχρονων και προβλεπόμενα μελλοντικών σχεδιαστικών προκλήσεων

A novel entropy production based full-chip TSV fatigue analysis

Through-silicon vias (TSVs) are subject to thermal fatigue due to stress over time, no matter how small the stress is. Existing works on TSV fatigue all rely on measurement-based parameters to estimate the lifetime, and cannot consider detailed thermal profiles. In this paper, we propose a new method for TSV fatigue prediction using entropy production during thermal cycles. By combining thermodynamics and mechanics laws, the fatigue process can be quantitatively evaluated with detailed thermal profiles. Experimental results show that interestingly, the landing pad possesses the most easy-to-fail region, which generates up to 50% more entropy compared with the TSV body. The impact of landing pad dimension and TSV geometries are also studied, providing guidance for reliability enhancement. Finally, full-chip fatigue analysis is performed based on stress superposition. To the best of the authors\u27 knowledge, this is the first TSV fatigue model that is free of measurement data fitting, the first that is capable of considering detailed thermal profiles, and the first framework for efficient full-chip TSV fatigue analysis. --Abstract, page iii

2D Parity Product Code for TSV online fault correction and detection

Through-Silicon-Via (TSV) is one of the most promising technologies to realize 3D Integrated Circuits (3D-ICs).  However, the reliability issues due to the low yield rates and the sensitivity to thermal hotspots and stress issues are preventing TSV-based 3D-ICs from being widely and efficiently used. To enhance the reliability of TSV connections, using error correction code to detect and correct faults automatically has been demonstrated as a viable solution.This paper presents a 2D Parity Product Code (2D-PPC) for TSV fault-tolerance with the ability to correct one fault and detect, at least, two faults.  In an implementation of 64-bit data and 81-bit codeword, 2D-PPC can detect over 71 faults, on average. Its encoder and decoder decrease the overall latency by 38.33% when compared to the Single Error Correction Double Error Detection code.  In addition to the high detection rates, the encoder can detect 100% of its gate failures, and the decoder can detect and correct around 40% of its individual gate failures. The squared 2D-PPC could be extended using orthogonal Latin square to support extra bit correction