Time-domain optimization of amplifiers based on distributed genetic algorithms

Thesis presented in partial fulfillment of the requirements for the degree of Doctor of Philosophy in the subject of Electrical and Computer EngineeringThe work presented in this thesis addresses the task of circuit optimization, helping the designer facing the high performance and high efficiency circuits demands of the market and technology evolution. A novel framework is introduced, based on time-domain analysis, genetic algorithm optimization, and distributed processing. The time-domain optimization methodology is based on the step response of the amplifier. The main advantage of this new time-domain methodology is that, when a given settling-error is reached within the desired settling-time, it is automatically guaranteed that the amplifier has enough open-loop gain, AOL, output-swing (OS), slew-rate (SR), closed loop bandwidth and closed loop stability. Thus, this simplification of the circuit‟s evaluation helps the optimization process to converge faster. The method used to calculate the step response expression of the circuit is based on the inverse Laplace transform applied to the transfer function, symbolically, multiplied by 1/s (which represents the unity input step). Furthermore, may be applied to transfer functions of circuits with unlimited number of zeros/poles, without approximation in order to keep accuracy. Thus, complex circuit, with several design/optimization degrees of freedom can also be considered. The expression of the step response, from the proposed methodology, is based on the DC bias operating point of the devices of the circuit. For this, complex and accurate device models (e.g. BSIM3v3) are integrated. During the optimization process, the time-domain evaluation of the amplifier is used by the genetic algorithm, in the classification of the genetic individuals. The time-domain evaluator is integrated into the developed optimization platform, as independent library, coded using C programming language. The genetic algorithms have demonstrated to be a good approach for optimization since they are flexible and independent from the optimization-objective. Different levels of abstraction can be optimized either system level or circuit level. Optimization of any new block is basically carried-out by simply providing additional configuration files, e.g. chromosome format, in text format; and the circuit library where the fitness value of each individual of the genetic algorithm is computed. Distributed processing is also employed to address the increasing processing time demanded by the complex circuit analysis, and the accurate models of the circuit devices. The communication by remote processing nodes is based on Message Passing interface (MPI). It is demonstrated that the distributed processing reduced the optimization run-time by more than one order of magnitude. Platform assessment is carried by several examples of two-stage amplifiers, which have been optimized and successfully used, embedded, in larger systems, such as data converters. A dedicated example of an inverter-based self-biased two-stage amplifier has been designed, laid-out and fabricated as a stand-alone circuit and experimentally evaluated. The measured results are a direct demonstration of the effectiveness of the proposed time-domain optimization methodology.Portuguese Foundation for the Science and Technology (FCT

Low-Voltage Bulk-Driven Amplifier Design and Its Application in Implantable Biomedical Sensors

The powering unit usually represents a significant component of the implantable biomedical sensor system since the integrated circuits (ICs) inside for monitoring different physiological functions consume a great amount of power. One method to reduce the volume of the powering unit is to minimize the power supply voltage of the entire system. On the other hand, with the development of the deep sub-micron CMOS technologies, the minimum channel length for a single transistor has been scaled down aggressively which facilitates the reduction of the chip area as well. Unfortunately, as an inevitable part of analytic systems, analog circuits such as the potentiostat are not amenable to either low-voltage operations or short channel transistor scheme. To date, several proposed low-voltage design techniques have not been adopted by mainstream analog circuits for reasons such as insufficient transconductance, limited dynamic range, etc. Operational amplifiers (OpAmps) are the most fundamental circuit blocks among all analog circuits. They are also employed extensively inside the implantable biosensor systems. This work first aims to develop a general purpose high performance low-voltage low-power OpAmp. The proposed OpAmp adopts the bulk-driven low-voltage design technique. An innovative low-voltage bulk-driven amplifier with enhanced effective transconductance is developed in an n-well digital CMOS process operating under 1-V power supply. The proposed circuit employs auxiliary bulk-driven input differential pairs to achieve the input transconductance comparable with the traditional gate-driven amplifiers, without consuming a large amount of current. The prototype measurement results show significant improvements in the open loop gain (AO) and the unity-gain bandwidth (UGBW) compared to other works. A 1-V potentiostat circuit for an implantable electrochemical sensor is then proposed by employing this bulk-driven amplifier. To the best of the author’s knowledge, this circuit represents the first reported low-voltage potentiostat system. This 1-V potentiostat possesses high linearity which is comparable or even better than the conventional potentiostat designs thanks to this transconductance enhanced bulk-driven amplifier. The current consumption of the overall potentiostat is maintained around 22 microampere. The area for the core layout of the integrated circuit chip is 0.13 mm2 for a 0.35 micrometer process

Analog design for manufacturability: lithography-aware analog layout retargeting

As transistor sizes shrink over time in the advanced nanometer technologies, lithography effects have become a dominant contributor of integrated circuit (IC) yield degradation. Random manufacturing variations, such as photolithographic defect or spot defect, may cause fatal functional failures, while systematic process variations, such as dose fluctuation and defocus, can result in wafer pattern distortions and in turn ruin circuit performance. This dissertation is focused on yield optimization at the circuit design stage or so-called design for manufacturability (DFM) with respect to analog ICs, which has not yet been sufficiently addressed by traditional DFM solutions. On top of a graph-based analog layout retargeting framework, in this dissertation the photolithographic defects and lithography process variations are alleviated by geometrical layout manipulation operations including wire widening, wire shifting, process variation band (PV-band) shifting, and optical proximity correction (OPC). The ultimate objective of this research is to develop efficient algorithms and methodologies in order to achieve lithography-robust analog IC layout design without circuit performance degradation

Analysis and Design Methodologies for Switched-Capacitor Filter Circuits in Advanced CMOS Technologies

Analog filters are an extremely important block in several electronic systems, such as RF transceivers, data acquisition channels, or sigma-delta modulators. They allow the suppression of unwanted frequencies bands in a signal, improving the system’s performance. These blocks are typically implemented using active RC filters, gm-C filters, or switched-capacitor (SC) filters. In modern deep-submicron CMOS technologies, the transistors intrinsic gain is small and has a large variability, making the design of moderate and high-gain amplifiers, used in the implementation of filter blocks, extremely difficult. To avoid this difficulty, in the case of SC filters, the opamp can be replaced with a voltage buffer or a low-gain amplifier (< 2), simplifying the amplifier’s design and making it easier to achieve higher bandwidths, for the same power. However, due to the loss of the virtual ground node, the circuit becomes sensitive to the effects of parasitic capacitances, which effect needs to be compensated during the design process. This thesis addresses the task of optimizing SC filters (mainly focused on implementations using low-gain amplifiers), helping designers with the complex task of designing high performance SC filters in advanced CMOS technologies. An efficient optimization methodology is introduced, based on hybrid cost functions (equation-based/simulation-based) and using genetic algorithms. The optimization software starts by using equations in the cost function to estimate the filter’s frequency response reducing computation time, when compared with the electrical simulation of the circuit’s impulse response. Using equations, the frequency response can be quickly computed (< 1 s), allowing the use of larger populations in the genetic algorithm (GA) to cover the entire design space. Once the specifications are met, the population size is reduced and the equation-based design is fine-tuned using the more computationally intensive, but more accurate, simulation-based cost function, allowing to accurately compensate the parasitic capacitances, which are harder to estimate using equations. With this hybrid approach, it is possible to obtain the final optimized design within a reasonable amount of computation time. Two methods are described for the estimation of the filter’s frequency response. The first method is hierarchical in nature where, in the first step, the frequency response is optimized using the circuit’s ideal transfer function. The following steps are used to optimize circuits, at transistor level, to replace the ideal blocks (amplifier and switches) used in the first step, while compensating the effects of the circuit’s parasitic capacitances in the ideal design. The second method uses a novel efficient numerical methodology to obtain the frequency response of SC filters, based on the circuit’s first-order differential equations. The methodology uses a non-hierarchical approach, where the non-ideal effects of the transistors (in the amplifier and in the switches) are taken into consideration, allowing the accurate computation of the frequency response, even in the case of incomplete settling in the SC branches. Several design and optimization examples are given to demonstrate the performance of the proposed methods. The prototypes of a second order programmable bandpass SC filter and a 50 Hz notch SC filter have been designed in UMC 130 nm CMOS technology and optimized using the proposed optimization software with a supply voltage of 0.9 V. The bandpass SC filter has a total power consumption of 249 uW. The filter’s central frequency can be tuned between 3.9 kHz and 7.1 kHz, the gain between -6.4 dB and 12.6 dB, and the quality factor between 0.9 and 6.9. Depending on the bit configuration, the circuit’s THD is between -54.7 dB and -61.7 dB. The 50 Hz notch SC filter has a total power consumption of 273 uW. The transient simulation of the circuit’s extracted view (C+CC) shows an attenuation of 52.3 dB in the 50 Hz interference and that the desired 5 kHz signal has a THD of -92.3 dB

Pipeline analog-to-digital converters for wide-band wireless communications

During the last decade, the development of the analog electronics has been dictated by the enormous growth of the wireless communications. Typical for the new communication standards has been an evolution towards higher data rates, which allows more services to be provided. Simultaneously, the boundary between analog and digital signal processing is moving closer to the antenna, thus aiming for a software defined radio. For analog-to-digital converters (ADCs) of radio receivers this indicates higher sample rate, wider bandwidth, higher resolution, and lower power dissipation. The radio receiver architectures, showing the greatest potential to meet the commercial trends, include the direct conversion receiver and the super heterodyne receiver with an ADC sampling at the intermediate frequency (IF). The pipelined ADC architecture, based on the switched capacitor (SC) technique, has most successfully covered the widely separated resolution and sample rate requirements of these receiver architectures. In this thesis, the requirements of ADCs in both of these receiver architectures are studied using the system specifications of the 3G WCDMA standard. From the standard and from the limited performance of the circuit building blocks, design constraints for pipeline ADCs, at the architectural and circuit level, are drawn. At the circuit level, novel topologies for all the essential blocks of the pipeline ADC have been developed. These include a dual-mode operational amplifier, low-power voltage reference circuits with buffering, and a floating-bulk bootstrapped switch for highly-linear IF-sampling. The emphasis has been on dynamic comparators: a new mismatch insensitive topology is proposed and measurement results for three different topologies are presented. At the architectural level, the optimization of the ADCs in the single-chip direct conversion receivers is discussed: the need for small area, low power, suppression of substrate noise, input and output interfaces, etc. Adaptation of the resolution and sample rate of a pipeline ADC, to be used in more flexible multi-mode receivers, is also an important topic included. A 6-bit 15.36-MS/s embedded CMOS pipeline ADC and an 8-bit 1/15.36-MS/s dual-mode CMOS pipeline ADC, optimized for low-power single-chip direct conversion receivers with single-channel reception, have been designed. The bandwidth of a pipeline ADC can be extended by employing parallelism to allow multi-channel reception. The errors resulted from mismatch of parallel signal paths are analyzed and their elimination is presented. Particularly, an optimal partitioning of the resolution between the stages, and the number of parallel channels, in time-interleaved ADCs are derived. A low-power 10-bit 200-MS/s CMOS parallel pipeline ADC employing double sampling and a front-end sample-and-hold (S/H) circuit is implemented. Emphasis of the thesis is on high-resolution pipeline ADCs with IF-sampling capability. The resolution is extended beyond the limits set by device matching by using calibration, while time interleaving is applied to widen the signal bandwidth. A review of calibration and error averaging techniques is presented. A simple digital self-calibration technique to compensate capacitor mismatch within a single-channel pipeline ADC, and the gain and offset mismatch between the channels of a time-interleaved ADC, is developed. The new calibration method is validated with two high-resolution BiCMOS prototypes, a 13-bit 50-MS/s single-channel and a 14-bit 160-MS/s parallel pipeline ADC, both utilizing a highly linear front-end allowing sampling from 200-MHz IF-band.reviewe

Analysis and design of low-power data converters

In a large number of applications the signal processing is done exploiting both analog and digital signal processing techniques. In the past digital and analog circuits were made on separate chip in order to limit the interference and other side effects, but the actual trend is to realize the whole elaboration chain on a single System on Chip (SoC). This choice is driven by different reasons such as the reduction of power consumption, less silicon area occupation on the chip and also reliability and repeatability. Commonly a large area in a SoC is occupied by digital circuits, then, usually a CMOS short-channel technological processes optimized to realize digital circuits is chosen to maximize the performance of the Digital Signal Proccessor (DSP). Opposite, the short-channel technology nodes do not represent the best choice for analog circuits. But in a large number of applications, the signals which are treated have analog nature (microphone, speaker, antenna, accelerometers, biopotential, etc.), then the input and output interfaces of the processing chip are analog/mixed-signal conversion circuits. Therefore in a single integrated circuit (IC) both digital and analog circuits can be found. This gives advantages in term of total size, cost and power consumption of the SoC. The specific characteristics of CMOS short-channel processes such as: • Low breakdown voltage (BV) gives a power supply limit (about 1.2 V). • High threshold voltage VTH (compared with the available voltage supply) fixed in order to limit the leakage power consumption in digital applications (of the order of 0.35 / 0.4V), puts a limit on the voltage dynamic, and creates many problems with the stacked topologies. • Threshold voltage dependent on the channel length VTH = f(L) (short channel effects). • Low value of the output resistance of the MOS (r0) and gm limited by speed saturation, both causes contribute to achieving a low intrinsic gain gmr0 = 20 to 26dB. • Mismatch which brings offset effects on analog circuits. make the design of high performance analog circuits very difficult. Realizing lowpower circuits is fundamental in different contexts, and for different reasons: lowering the power dissipation gives the capability to reduce the batteries size in mobile devices (laptops, smartphones, cameras, measuring instruments, etc.), increase the life of remote sensing devices, satellites, space probes, also allows the reduction of the size and weight of the heat sink. The reduction of power dissipation allows the realization of implantable biomedical devices that do not damage biological tissue. For this reason, the analysis and design of low power and high precision analog circuits is important in order to obtain high performance in technological processes that are not optimized for such applications. Different ways can be taken to reduce the effect of the problems related to the technology: • Circuital level: a circuit-level intervention is possible to solve a specific problem of the circuit (i.e. Techniques for bandwidth expansion, increase the gain, power reduction, etc.). • Digital calibration: it is the highest level to intervene, and generally going to correct the non-ideal structure through a digital processing, these aims are based on models of specific errors of the structure. • Definition of new paradigms. This work has focused the attention on a very useful mixed-signal circuit: the pipeline ADC. The pipeline ADCs are widely used for their energy efficiency in high-precision applications where a resolution of about 10-16 bits and sampling rates above hundreds of Mega-samples per second (telecommunication, radar, etc.) are needed. An introduction on the theory of pipeline ADC, its state of the art and the principal non-idealities that affect the energy efficiency and the accuracy of this kind of data converters are reported in Chapter 1. Special consideration is put on low-voltage low-power ADCs. In particular, for ADCs implemented in deep submicron technology nodes side effects called short channel effects exist opposed to older technology nodes where undesired effects are not present. An overview of the short channel effects and their consequences on design, and also power consuption reduction techniques, with particular emphasis on the specific techniques adopted in pipelined ADC are reported in Chapter 2. Moreover, another way may be undertaken to increase the accuracy and the efficiency of an ADC, this way is the digital calibration. In Chapter 3 an overview on digital calibration techniques, and furthermore a new calibration technique based on Volterra kernels are reported. In some specific applications, such as software defined radios or micropower sensor, some circuits should be reconfigurable to be suitable for different radio standard or process signals with different charateristics. One of this building blocks is the ADC that should be able to reconfigure the resolution and conversion frequency. A reconfigurable voltage-scalable ADC pipeline capable to adapt its voltage supply starting from the required conversion frequency was developed, and the results are reported in Chapter 4. In Chapter 5, a pipeline ADC based on a novel paradigm for the feedback loop and its theory is described

Design of a 16-bit 50-kHz low-power SC delta-sigma modulator for ADC in 0.18um CMOS technology

This Master Thesis work aims to design a low power high-resolution Delta-Sigma modulator for ADC in a low-cost standard mixed-mode CMOS technology. For this purpose, a single-bit single loop Delta-Sigma architecture will be selected in order to mitigate distortion issues caused by technology mismatching. Also, the switched capacitor (SC) circuit implementation of the Delta-Sigma modulator will avoid the use of any internal voltage supply bootstrapping for biasing critical switches in favor of extending IC lifetime. The designer will take benefit of the low-power Class-AB OpA general purpose 16 Bits Sigma-Delta modulator ADC for double precision audio 50 kHz bandwidth, targeted for Low-power operation, involving no additional digital circuit compensation, no bootstrapping techniques and resistor-less topologies, and relaying on Switched Capacitor Sigma-Delta modulator topologies for robust operation and insensitivity to process and temperature variations, is presented in this work. Designed in a commercial 180 nm technology, the whole circuit static current is calculated in 620 uA with a nominal voltage supply of 1.8 V, performing a Schreier FOM of 174.16 dB. This outstanding state-of-the-art forseen FOM is achieved by the use of architectural and circuital Low-power techniques. At the architectural level a single loop Low-distortion topology with the optimum order and coefficients have been chosen, while at circuit level very novel OTA based on Variable Mirror Amplifiers allows an efficient Class-AB operation. Specially optimized switched variable mirror amplifiers with a novel design methodology based on Bottom-up approach, allows faster design stages ensuring feasable circuit performance at architectural level without the need of large iterative simulations of the complete SC Sigma-Delta modulator. Simulation results confirms the complete optimization process and the metioned advantages with respect to the tradicional approach

Current Programmed Active Pixel Sensors for Large Area Diagnostic X-ray Imaging

Rapid progress over the last decade on large area thin film transistor (TFT) arrays led to the emergence of high-performance, low-power, low-cost active matrix flat panel imagers. Despite the shortcomings associated with the instability and low mobility of TFTs, the amorphous silicon TFT technology still remains the primary solution for the backplane of flat panel imagers. The use of a-Si:H TFTs as the building block of the large area integrated circuit becomes challenging particularly when the role of the TFT is extended from traditional switching applications to on-pixel signal amplifier for large area digital imaging. This is the idea behind active pixel sensor (APS) architectures in which under each pixel an amplifier circuit consisting of one or two switching TFTs integrated with one amplifying TFT is fabricated. To take advantage of the full potential of these amplifiers, it is crucial to develop APS architectures to compensate for the limitations of the TFTs. In this thesis several APS architectures are designed, simulated, fabricated, and tested addressing these challenges using the mask sets presented in Appendix A. The proposed APS architectures can compensate for inherent stabilities of the comprising TFTs. Therefore, the sensitivity of their output data to the transistor variations is significantly suppressed. This is achieved by using a well defined external current source instead of the traditional voltage source to reset the APS architectures during the reset cycle of their periodic operation. The performance of these circuits is analyzed in terms of their stability, settling time, noise, and temperature-dependence. For appropriate readout of the current mode APS architectures, high gain transresistance amplifiers with correlated double sampling capability is designed, simulated and fabricated in CMOS technology. Measurement and measurement based calculation results reveal that the proposed APS architectures can meet even the stringent requirements of low noise, real-time digital fluoroscopy

Design of PVT Tolerant Inverter Based Circuits for Low Supply Voltages

University of Minnesota Ph.D. dissertation. June 2015. Major: Electrical Engineering. Advisor: Ramesh Harjani. 1 computer file (PDF); xiv, 187 pages.Rapid advances in the field of integrated circuit design has been advantageous from the point of view of cost and miniaturization. Although technology scaling is advantageous to digital circuits in terms of increased speed and lower power, analog circuits strongly suffer from this trend. This is becoming a crucial bottle neck in the realization of a system on chip in scaled technology merging high-density digital parts, with high performance analog interfaces. This is because scaled technologies reduce the output impedance (gain) and supply voltage which limits the dynamic range (output swing). One way to mitigate the power supply restrictions is to move to current mode circuit circuit design rather than voltage mode designs. This thesis focuses on designing Process Voltage and Temperature (PVT) tolerant base band circuits at lower supply voltages and in lower technologies. Inverter amplifiers are known to have better transconductance efficiency, better noise and linearity performance. But inverters are prone to PVT variations and has poor CMRR and PSRR. To circumvent the problem, we have proposed various biasing schemes for inverter like semi constant current biasing, constant current biasing and constant gm biasing. Each biasing technique has its own advantages, like semi constant current biasing allows to select different PMOS and NMOS current. This feature allows for higher inherent inverter linearity. Similarly constant current and constant gm biasing allows for reduced PVT sensitivity. The inverter based OTA achieves a measured THD of -90.6 dB, SNR of 78.7 dB, CMRR 97dB, PSRR 61 dB wile operating from a nominal power of 0.9V and at output swing of 0.9V{pp,diff} in TSMC 40nm general purpose process. Further the measured third harmonic distortion varies approximately by 11.5dB with 120C variation in temperature and 9dB with a 18% variation in supply voltage. The linearity can be increased by increasing the loop gain and bandwidth in a negative feedback circuit or by increasing the over drive voltage in open loop architectures. However both these techniques increases the noise contribution of the circuit. There exist a trade off between noise and linearity in analog circuits. To circumvent this problem, we have introduced nonlinear cancellation techniques and noise filtering techniques. An analog-to-digital converter (ADC) driver which is capable of amplifying the continuous time signal with a gain of 8 and sample onto the input capacitor(1pF) of 1 10 bit successive approximation register (SAR) ADC is designed in TSMC 65nm general purpose process. This exploits the non linearity cancellation in current mirror and also allows for higher bandwidth operation by decoupling closed loop gain from the negative feedback loop. The noise from the out of band is filtered before sampling leading to low noise operation. The measured design operates at 100MS/s and has an OIP_3 of 40dBm at the nyquist rate, noise power spectral density of 17nV/sqrt{Hz} and inter modulation distortion of 65dB. The intermodulation distortion variation across 10 chips is 6dB and 4dB across a temperature variation of 120C. Non linearity cancellation is exploited in designing two filters, an anti alias filter and a continuously tunable channel select filter. Traditional active RC filters are based on cascade of integrators. These create multiple low impedance nodes in the circuit which results in a higher noise. We propose a real low pass filter based filter architecture rather than traditional integrator based approach. Further the entire filtering operation takes place in current domain to circumvent the power supply limitations. This also facilitates the use of tunable non linear metal oxide semiconductor capacitor (MOSCAP) as filter capacitors. We introduce techniques of self compensation to use the filter resistor and capacitor as compensation capacitor for lower power. The anti alias filter designed for 50MHz bandwidth is fabricated in IBM 65nm process achieves an IIP3 of 33dBm, while consuming 1.56mW from 1.2 V supply. The channel select filter is tunable from 34MHz to 314MHz and is fabricated in TSMC 65nm general purpose process. This filter achieves an OIP3 of 25.24 dBm at the maximum frequency while drawing 4.2mA from 1.1V supply. The measured intermodulation distortion varies by 5dB across 120C variation in temperature and 6.5dB across a 200mV variation in power supply. Further this filter presents a high impedance node at the input and a low impedance node at the output easing system integration. SAR ADCs are becoming popular at lower technologies as they are based on device switching rather than amplifying circuits. But recent SAR ADCs that have good energy efficiency have had relatively large input capacitance increasing the driver power. We present a 2X time interleaved (TI) SAR ADC which has the lowest input capacitance of 133fF in literature. The sampling capacitor is separated from the capacitive digital to analog converter (DAC) array by performing the input and DAC reference subtraction in the current domain rather than as done traditionally in charge domain. The proposed ADC is fabricated in TSMC's 65nm general purpose process and occupies an area of 0.0338 mm^2. The measured ADC spurious free dynamic range (SFDR) is 57dB and the measured effective number of bits (ENOB) at nyquist rate is 7.55 bit while using 1.55mW power from 1 V supply. A sub 1V reference circuit is proposed, that exploits the complementary to absolute temperature (CTAT) and proportional to absolute temperature (PTAT) voltages in the beta multiplier circuit to attain a stable voltage with temperature and power supply. A one-time calibration is integrated in the architecture to get a good performance over process. Chopper stabilization is employed to reduce the flicker noise of the reference circuit. The prototype was simulated in TSMC 65nm process and we obtain the nominal output of 236mW, while consuming 0.7mW from power supply. Simulations show a temperature coefficient of 18 ppmC from -40 to 100C and with a power supply ranging from 0.8 to 2V