통계적 주파수 검출기 기반 기준 주파수를 사용하지 않는 클록 및 데이터 복원 회로의 설계 방법론

학위논문(박사) -- 서울대학교대학원 : 공과대학 전기·정보공학부, 2022. 8. 정덕균.In this thesis, a design of a high-speed, power-efficient, wide-range clock and data recovery (CDR) without a reference clock is proposed. A frequency acquisition scheme using a stochastic frequency detector (SFD) based on the Alexander phase detector (PD) is utilized for the referenceless operation. Pat-tern histogram analysis is presented to analyze the frequency acquisition behavior of the SFD and verified by simulation. Based on the information obtained by pattern histogram analysis, SFD using autocovariance is proposed. With a direct-proportional path and a digital integral path, the proposed referenceless CDR achieves frequency lock at all measurable conditions, and the measured frequency acquisition time is within 7μs. The prototype chip has been fabricated in a 40-nm CMOS process and occupies an active area of 0.032 mm2. The proposed referenceless CDR achieves the BER of less than 10-12 at 32 Gb/s and exhibits an energy efficiency of 1.15 pJ/b at 32 Gb/s with a 1.0 V supply.본 논문은 기준 클럭이 없는 고속, 저전력, 광대역으로 동작하는 클럭 및 데이터 복원회로의 설계를 제안한다. 기준 클럭이 없는 동작을 위해서 알렉산더 위상 검출기에 기반한 통계적 주파수 검출기를 사용하는 주파수 획득 방식이 사용된다. 통계적 주파수 검출기의 주파수 추적 양상을 분석하기 위해 패턴 히스토그램 분석 방법론을 제시하였고 시뮬레이션을 통해 검증하였다. 패턴 히스토그램 분석을 통해 얻은 정보를 바탕으로 자기공분산을 이용한 통계적 주파수 검출기를 제안한다. 직접 비례 경로와 디지털 적분 경로를 통해 제안된 기준 클럭이 없는 클럭 및 데이터 복원회로는 모든 측정 가능한 조건에서 주파수 잠금을 달성하는 데 성공하였고, 모든 경우에서 측정된 주파수 추적 시간은 7μs 이내이다. 40-nm CMOS 공정을 이용하여 만들어진 칩은 0.032 mm2의 면적을 차지한다. 제안하는 클럭 및 데이터 복원회로는 32 Gb/s의 속도에서 비트에러율 10-12 이하로 동작하였고, 에너지 효율은 32Gb/s의 속도에서 1.0V 공급전압을 사용하여 1.15 pJ/b을 달성하였다.CHAPTER 1 INTRODUCTION 1 1.1 MOTIVATION 1 1.2 THESIS ORGANIZATION 13 CHAPTER 2 BACKGROUNDS 14 2.1 CLOCKING ARCHITECTURES IN SERIAL LINK INTERFACE 14 2.2 GENERAL CONSIDERATIONS FOR CLOCK AND DATA RECOVERY 24 2.2.1 OVERVIEW 24 2.2.2 JITTER 26 2.2.3 CDR JITTER CHARACTERISTICS 33 2.3 CDR ARCHITECTURES 39 2.3.1 PLL-BASED CDR – WITH EXTERNAL REFERENCE CLOCK 39 2.3.2 DLL/PI-BASED CDR 44 2.3.3 PLL-BASED CDR – WITHOUT EXTERNAL REFERENCE CLOCK 47 2.4 FREQUENCY ACQUISITION SCHEME 50 2.4.1 TYPICAL FREQUENCY DETECTORS 50 2.4.1.1 DIGITAL QUADRICORRELATOR FREQUENCY DETECTOR 50 2.4.1.2 ROTATIONAL FREQUENCY DETECTOR 54 2.4.2 PRIOR WORKS 56 CHAPTER 3 DESIGN OF THE REFERENCELESS CDR USING SFD 58 3.1 OVERVIEW 58 3.2 PROPOSED FREQUENCY DETECTOR 62 3.2.1 MOTIVATION 62 3.2.2 PATTERN HISTOGRAM ANALYSIS 68 3.2.3 INTRODUCTION OF AUTOCOVARIANCE TO STOCHASTIC FREQUENCY DETECTOR 75 3.3 CIRCUIT IMPLEMENTATION 83 3.3.1 IMPLEMENTATION OF THE PROPOSED REFERENCELESS CDR 83 3.3.2 CONTINUOUS-TIME LINEAR EQUALIZER (CTLE) 85 3.3.3 DIGITALLY-CONTROLLED OSCILLATOR (DCO) 87 3.4 MEASUREMENT RESULTS 89 CHAPTER 4 CONCLUSION 99 APPENDIX A DETAILED FREQUENCY ACQUISITION WAVEFORMS OF THE PROPOSED SFD 100 BIBLIOGRAPHY 108 초 록 122박

Low-power ADC designs in scaled CMOS process

This thesis presents advanced design techniques for successive approximation register (SAR) analog-to-digital converters (ADCs), continuous-time ∆Σ ADCs, and single-slope (SS) ADCs in nano-scale CMOS technologies. (1) In high-speed SAR ADCs, metastability of the comparator limits the performance, which even results in the sparkle code errors. Proposed background calibration utilizing the comparator decision time detector removes the metastability-induced sparkle code errors by controlling the metastability detection window. At the same time, 1-bit resolution increase is gained from the proposed technique, which results in the fewer comparison cycles. Along with the relaxed requirement on the comparator, this cycle reduction helps to achieve the good power efficiency in high-speed SAR design. A prototype ADC in 40nm CMOS achieves 35.3dB SNDR and consumes 0.81mW while sampling at 700MS/s. (2) In the proposed continuous-time ∆Σ ADCs, conventional power-hungry opamp is replaced by voltage controlled oscillators (VCOs) that perform the data conversion in the phase domain instead of the voltage domain. In contrary to the opamp which is difficult to achieve good performance in the advanced CMOS process, VCOs have many advantages in the phase domain. To solve the nonlinear gain of VCOs, dual VCO-based integrator is used to suppress the dominant second-order distortion. To address the distortion from the DAC, a novel DAC calibration technique that both digitally senses and removes DAC mismatch errors is proposed. It has low hardware complexity by taking advantage of the intrinsic clocked level averaging (CLA) capability of dual-VCO-based integrator. It ensures high linearity regardless of the VCO center frequency. By lowering the VCO center frequency, power consumption is reduced. A prototype ADC designed in 130nm occupies an area of only 0.04mm² . It achieves 71dB SNDR over 1.7MHz bandwidth (BW) while sampling at 250MS/s and consuming only 0.9mW from a 1.2V power supply. The corresponding figure-of-merit (FOM) is 98 fJ/conversion-step. (3) A SS ADC has advantages of high linearity and a simple architecture. Thus, it is well suited for the column-parallel architecture for the CMOS image sensors. However, conversion speed is severely limited in high-bit resolution since more than 2 [superscript N] cycles are required for a N-bit resolution. To tackle this limitation, a two-step approach becomes popular. In this thesis, a two-step SAR/SS architecture is presented. In addition to reducing the conversion time, analog correlated double sampling (CDS) can cancel kT/C noise, which enables capacitor area reduction. A prototype ADC in 180nm CMOS occupies only 9.3µm x 830µm. It achieves 60.5dB SNR after CDS while sampling at 256kHz and consuming 91µWElectrical and Computer Engineerin

Fast synchronization 3R burst-mode receivers for passive optical networks

This paper gives a tutorial overview on high speed burst-mode receiver (BM-RX) requirements, specific for time division multiplexing passive optical networks, and design issues of such BM-RXs as well as their advanced design techniques. It focuses on how to design BM-RXs with short burst overhead for fast synchronization. We present design principles and circuit architectures of various types of burst-mode transimpedance amplifiers, burst-mode limiting amplifiers and burst-mode clock and data recovery circuits. The recent development of 10 Gb/s BM-RXs is highlighted also including dual-rate operation for coexistence with deployed PONs and on-chip auto reset generation to eliminate external timing-critical control signals provided by a PON medium access control. Finally sub-system integration and state-of-the-art system performance for 10 Gb/s PONs are reviewed

Design of reconfigurable multi-mode RF circuits

Wireless communication systems and devices have been developing at a much faster pace in the past few years. With the introduction of new applications and services and the increasing demand for higher data rate comes the need for new frequency bands and new standards. One critical issue for next generation wireless devices is how to support all of the existing and emerging bands while not increasing the cost and power consumption. A feasible solution is the concept of the software-defined radio where a single receiver can be reconfigured to operate in different modes, each of which supports one or several bands and/or standards. To implement such a reconfigurable receiver, reconfigurable RF building blocks, such as the LNA, mixer, VCO, etc., are required. This dissertation focuses on two key blocks: the low noise amplifier (LNA) and the voltage controlled oscillator (VCO). First the design, modeling and characterization of a multi-tap transformer are discussed. Simple mathematical calculations are utilized to estimate the inductances and coupling coefficients from the physical parameters of a multi-tap transformer. The design method is verified with several designed multi-tap transformers that are characterized up to 10 GHz using Momentum simulation results. The effect of switch loss on a switched multi-tap transformer is explored and a broadband lumped-element model of the multi-tap transformer is also proposed. Next a reconfigurable multimode LNA capable of single-band, concurrent dual-band, and ultra-wideband operation is presented. The multimode operation is realized by incorporating a switched multi-tap transformer into the input matching network of an inductively degenerated common source amplifier. The proposed LNA achieves single band matching at 2.8, 3.3, and 4.6 GHz; concurrent dual-band matching at 2.05 and 5.65 GHz; and ultra-wideband matching from 4.3 to 10.8 GHz. The chip was fabricated in a 0.13 m CMOS process, and occupies an area of 0.72 mm2, and has a power dissipation of 6.4 mW from a 1.2-V supply. Finally, a triple-mode VCO using a transformer-based 4th order tank with tunable transconductance cells coupling the primary and secondary inductor is introduced. The tank impedance can be re-shaped by the transconductance cells through the tuning of their biasing currents. With the control of biasing current, VCO is configured in three modes, capable of generating a single frequency in 3- and 5- GHz bands, respectively, and two frequencies in both 3- and 5- GHz bands simultaneously. The triple-mode VCO was fabricated in a 0.13 μm CMOS process, occupies an area of 0.16 mm2, and dissipates 5.6 mW from a 1.2-V supply

Low power VCO-based analog-to-digital conversion

textThis dissertation presents novel two stage ADC architecture with a VCO based second stage. With the scaling of the supply voltages in modern CMOS process it is difficult to design high gain operational amplifiers needed for traditional voltage domain two-stage analog to digital converters. However time resolution continues to improve with the advancement in CMOS technology making VCO-based ADC more attractive. The nonlinearity in voltage-to-frequency transfer function is the biggest challenge in design of VCO based ADC. The hybrid approach used in this work uses a voltage domain first stage to determine the most significant bits and uses a VCO based second stage to quantize the small residue obtained from first stage. The architecture relaxes the gain requirement on the the first stage opamp and also relaxes the linearity requirements on the second stage VCO. The prototype ADC built in 65nm CMOS process achieves 63.7dB SNDR in 10MHz bandwidth while only consuming 1.1mW of power. The performance of the prototype chip is comparable to the state-of-art in terms of figure-of-merit but this new architecture uses significantly less circuit area.Electrical and Computer Engineerin

Phase Noise in CMOS Phase-Locked Loop Circuits

Phase-locked loops (PLLs) have been widely used in mixed-signal integrated circuits. With the continuously increasing demand of market for high speed, low noise devices, PLLs are playing a more important role in communications. In this dissertation, phase noise and jitter performances are investigated in different types of PLL designs. Hot carrier and negative bias temperature instability effects are analyzed from simulations and experiments. Phase noise of a CMOS phase-locked loop as a frequency synthesizer circuit is modeled from the superposition of noises from its building blocks: voltage-controlled oscillator, frequency divider, phase-frequency detector, loop filter and auxiliary input reference clock. A linear time invariant model with additive noise sources in frequency domain is presented to analyze the phase noise. The modeled phase noise results are compared with the corresponding experimentally measured results on phase-locked loop chips fabricated in 0.5 m n-well CMOS process. With the scaling of CMOS technology and the increase of electrical field, MOS transistors have become very sensitive to hot carrier effect (HCE) and negative bias temperature instability (NBTI). These two reliability issues pose challenges to designers for designing of chips in deep submicron CMOS technologies. A new strategy of switchable CMOS phase-locked loop frequency synthesizer is proposed to increase its tuning range. The switchable PLL which integrates two phase-locked loops with different tuning frequencies are designed and fabricated in 0.5 µm CMOS process to analyze the effects under HCE and NBTI. A 3V 1.2 GHz programmable phase-locked loop frequency synthesizer is designed in 0.5 μm CMOS technology. The frequency synthesizer is implemented using LC voltage-controlled oscillator (VCO) and a low power dual-modulus prescaler. The LC VCO working range is from 900MHz to 1.4GHz. Current mode logic (CML) is used in designing high speed D flip-flop in the dual-modulus prescaler circuits for low power consumption. The power consumption of the PLL chip is under 30mW. Fully differential LC VCO is used to provide high oscillation frequency. A new design of LC VCO using carbon nanotube (CNT) wire inductor has been proposed. The PLL design using CNT-LC VCO shows significant improvement in phase noise due to high-Q LC circuit

Low phase noise 2 GHz Fractional-N CMOS synthesizer IC

Low noise low division 2 GHz RF synthesizer integrated circuits (ICs) are conventionally implemented in some form of HBT process such as SiGe or GaAs. The research in this dissertation differs from convention, with the aim of implementing a synthesizer IC in a more convenient, low-cost Si-based CMOS process. A collection of techniques to push towards the noise and frequency limits of CMOS processes, and possibly other IC processes, is then one of the research outcomes. In a synthesizer low N-divider ratios are important, as high division ratios would amplify in-band phase noise. The design methods deployed as part of this research achieve low division ratios (4 ≤ N ≤ 33) and a high phase comparison frequency (>100 MHz). The synthesizer IC employs a first-order fractional-N topology to achieve increased frequency tuning resolution. The primary N-divider was implemented utilising current mode logic (CML) and the fractional accumulator utilising conventional CMOS. Both a conventional CMOS phase frequency detector (PFD) and a CML PFD were implemented for benchmarking purposes. A custom-built 4.4 GHz synthesizer circuit employing the IC was used to validate the research. In the 4.4 GHz synthesizer circuit, the prototype IC achieved a measured in-band phase noise plateau of L( f ) = -113 dBc/Hz at a 100 kHz frequency offset, which equates to a figure of merit (FOM) of -225 dBc/Hz. The FOM compares well with existing, but expensive, SiGe and GaAs HBT processes. Total IC power dissipation was 710 mW, which is considerably less than commercially available GaAs designs. The complete synthesizer IC was implemented in Austriamicrosystems‟ (AMS) 0.35 μm CMOS process and occupies an area of 3.15 x 2.18 mm2.Dissertation (MEng)--University of Pretoria, 2010.Electrical, Electronic and Computer Engineeringunrestricte

Gunn diodes and devices (bibliography for 1978-1980)

A listing of about 500 works from Soviet and foreign scientific literature on Gunn diodes and devices based on them is presented. The bibliography includes publications in which various questions pertinent to all (or several) types of semiconductor instruments in the superhigh frequency range are mentioned. A subject index is included

Digital PLL for ISM applications

In modern transceivers, a low power PLL is a key block. It is known that with the evolution of technology, lower power and high performance circuitry is a challenging demand. In this thesis, a low power PLL is developed in order not to exceed 2mW of total power consumption. It is composed by small area blocks which is one of the main demands. The blocks that compose the PLL are widely abridged and the final solution is shown, showing why it is employed. The VCO block is a Current-Starved Ring Oscillator with a frequency range from 400MHz to 1.5GHz, with a 300μW to approximately 660μW power consumption. The divider is composed by six TSPC D Flip-Flop in series, forming a divide-by-64 divider. The Phase-Detector is a Dual D Flip-Flop detector with a charge pump. The PLL has less than a 2us lock time and presents a output oscillation of 1GHz, as expected. It also has a total power consumption of 1.3mW, therefore fulfilling all the specifications. The main contributions of this thesis are that this PLL can be applied in ISM applications due to its covering frequency range and low cost 130nm CMOS technology