2,994 research outputs found

    Current-Mode Techniques for the Implementation of Continuous- and Discrete-Time Cellular Neural Networks

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    This paper presents a unified, comprehensive approach to the design of continuous-time (CT) and discrete-time (DT) cellular neural networks (CNN) using CMOS current-mode analog techniques. The net input signals are currents instead of voltages as presented in previous approaches, thus avoiding the need for current-to-voltage dedicated interfaces in image processing tasks with photosensor devices. Outputs may be either currents or voltages. Cell design relies on exploitation of current mirror properties for the efficient implementation of both linear and nonlinear analog operators. These cells are simpler and easier to design than those found in previously reported CT and DT-CNN devices. Basic design issues are covered, together with discussions on the influence of nonidealities and advanced circuit design issues as well as design for manufacturability considerations associated with statistical analysis. Three prototypes have been designed for l.6-pm n-well CMOS technologies. One is discrete-time and can be reconfigured via local logic for noise removal, feature extraction (borders and edges), shadow detection, hole filling, and connected component detection (CCD) on a rectangular grid with unity neighborhood radius. The other two prototypes are continuous-time and fixed template: one for CCD and other for noise removal. Experimental results are given illustrating performance of these prototypes

    Layout level design for testability strategy applied to a CMOS cell library

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    The layout level design for testability (LLDFT) rules used here allow to avoid some hard to detect faults or even undetectable faults on a cell library by modifying the cell layout without changing their behavior and achieving a good level of reliability. These rules avoid some open faults or reduce their appearance probability. The main purpose has been to apply that set of LLDFT rules on the cells of the library designed at the Centre Nacional de Microelectronica (CNM) in order to obtain a highly testable cell library. The authors summarize the main results (area overhead and performance degradation) of the application of the LLDFT rules on the cell

    Product assurance technology for custom LSI/VLSI electronics

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    The technology for obtaining custom integrated circuits from CMOS-bulk silicon foundries using a universal set of layout rules is presented. The technical efforts were guided by the requirement to develop a 3 micron CMOS test chip for the Combined Release and Radiation Effects Satellite (CRRES). This chip contains both analog and digital circuits. The development employed all the elements required to obtain custom circuits from silicon foundries, including circuit design, foundry interfacing, circuit test, and circuit qualification

    A parallel algorithm for switch-level timing simulation on a hypercube multiprocessor

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    The parallel approach to speeding up simulation is studied, specifically the simulation of digital LSI MOS circuitry on the Intel iPSC/2 hypercube. The simulation algorithm is based on RSIM, an event driven switch-level simulator that incorporates a linear transistor model for simulating digital MOS circuits. Parallel processing techniques based on the concepts of Virtual Time and rollback are utilized so that portions of the circuit may be simulated on separate processors, in parallel for as large an increase in speed as possible. A partitioning algorithm is also developed in order to subdivide the circuit for parallel processing

    Inertial and Degradation Delay Model for CMOS Logic Gates

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    The authors present the Inertial and Degradation Delay Model (IDDM) for CMOS digital simulation. The model combines the Degradation Delay Model presented in previous papers with a new algorithm to handle the inertial effect, and is able to take account of the propagation and filtering of arbitrarily narrow pulses (glitches, etc.). The model clearly overcomes the limitations of conventional approaches

    Testability enhancement of a basic set of CMOS cells

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    Testing should be evaluated as the ability of the test patterns to cover realistic faults, and high quality IC products demand high quality testing. We use a test strategy based on physical design for testability (to discover both open and short faults, which are difficult or even impossible to detect). Consequentially, layout level design for testability (LLDFT) rules have been developed, which prevent the faults, or at least reduce the chance of their appearing. The main purpose of this work is to apply a practical set of LLDFT rules to the library cells designed by the Centre Nacional de MicroelectrĂČnica (CNM) and obtain a highly testable cell library. The main results of the application of the LLDFT rules (area overheads and performance degradation) are summarized and the results are significant since IC design is highly repetitive; a small effort to improve cell layout can bring about great improvement in design

    Integrated chaos generators

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    This paper surveys the different design issues, from mathematical model to silicon, involved on the design of integrated circuits for the generation of chaotic behavior.ComisiĂłn Interministerial de Ciencia y TecnologĂ­a 1FD97-1611(TIC)European Commission ESPRIT 3110

    Concepts for on-board satellite image registration. Volume 3: Impact of VLSI/VHSIC on satellite on-board signal processing

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    Anticipated major advances in integrated circuit technology in the near future are described as well as their impact on satellite onboard signal processing systems. Dramatic improvements in chip density, speed, power consumption, and system reliability are expected from very large scale integration. Improvements are expected from very large scale integration enable more intelligence to be placed on remote sensing platforms in space, meeting the goals of NASA's information adaptive system concept, a major component of the NASA End-to-End Data System program. A forecast of VLSI technological advances is presented, including a description of the Defense Department's very high speed integrated circuit program, a seven-year research and development effort
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