2 research outputs found

    Substrate bias effect on cycling induced performance degradation of flash EEPROMs

    No full text

    Substrate bias effect on cycling induced performance degradation of flash EEPROMs

    No full text
    Cycling induced performance degradation of flash EEPROMs has been reported for VB=0 and VB<0 programming operation. Compared to VB=0, VB<0 programming shows lower interface degradation for identical cumulative charge fluence (for program) during repetitive program/erase cycling. Reduction in programming gate current has been found to be lower for VB<0 operation under identical interface damage as the VB=0 case. As a consequence, programming under VB<0 condition has been found to cause lower degradation of programming time and programmed VT due to cycling.© IEE
    corecore