An overview of terahertz imaging with resonant tunneling diodes

Terahertz (THz) imaging is a rapidly growing application motivated by industrial demands including harmless (non-ionizing) security imaging, multilayer paint quality control within the automotive industry, insulating foam non-invasive testing in aerospace, and biomedical diagnostics. One of the key components in the imaging system is the source and detector. This paper gives a brief overview of room temperature THz transceiver technology for imaging applications based on the emerging resonant tunneling diode (RTD) devices. The reported results demonstrate that RTD technology is a very promising candidate to realize compact, low-cost THz imaging systems

`THz Torch' technology: secure thermal infrared wireless communications using engineered blackbody radiation

The thermal (emitted) infrared frequency bands, from 20 to 40 THz and 60 to 100 THz, are best known for applications in thermography. This underused and unregulated part of the spectral range offers opportunities for the development of secure communications. The `THz Torch' concept, operating between the THz and mid-infrared ranges, was recently introduced. This technology fundamentally exploits engineered blackbody radiation, by partitioning thermally-generated spectral power into pre-defined frequency channels; the energy in each channel is then independently pulsed modulated to create a robust form of short-range secure communications in the far/mid-infrared. In the thesis, the development of `THz Torch' wireless communications systems will first be introduced. State-of-the-art THz technologies, infrared sources and detectors, as well as near-infrared and visible light communications technologies, will be reviewed in Chapter 2. Basic single-channel architecture of the `THz Torch' technology will be presented in Chapter 3. Fundamental limits for the first single-channel proof-of-concept demonstrator will be discussed, and possible engineering solutions will be proposed and verified experimentally. With such improvements, to date, octave bandwidth (25 to 50 THz) single-channel wireless links have been demonstrated with >2 kbit/s data rate and >10 cm transmission distance. To further increase the overall end-to-end data rate and/or the level of security, multiplexing schemes for `THz Torch' technologies are proposed in Chapter 4. Both frequency division multiplexing (FDM) and frequency-hopping spread-spectrum (FHSS) working demonstrators, operating between 10 and 100 THz spectral range, will be implemented. With such 4-channel multiplexing schemes, measured bit error rates (BERs) of <10−6 have been achieved over a transmission distance of 2.5 cm. Moreover, the integrity of such 4-channel multiplexing system is evaluated by introducing four jamming, interception and channel crosstalk experiments. Chapter 5 gives a detailed power link budget analysis for the 4-channel multiplexing system. The design, simulation and measurement of scalable THz metal mesh filters, which have potential applications for multi-channel `THz Torch' technology, will be presented in Chapter 6. The conclusions and further work are summarised in the last chapter. It is expected that this thermodynamics-based approach represents a new paradigm in the sense that 19th century physics can be exploited with 20th century multiplexing concepts for low cost 21st century ubiquitous security and defence applications in the thermal infrared range.Open Acces

Modern Applications in Optics and Photonics: From Sensing and Analytics to Communication

Optics and photonics are among the key technologies of the 21st century, and offer potential for novel applications in areas such as sensing and spectroscopy, analytics, monitoring, biomedical imaging/diagnostics, and optical communication technology. The high degree of control over light fields, together with the capabilities of modern processing and integration technology, enables new optical measurement systems with enhanced functionality and sensitivity. They are attractive for a range of applications that were previously inaccessible. This Special Issue aims to provide an overview of some of the most advanced application areas in optics and photonics and indicate the broad potential for the future

Enabling Real-Time Terahertz Imaging With Advanced Optics and Computational Imaging

La bande des térahertz est une région particulière du spectre électromagnétique comprenant les fréquences entre 0.1 THz à 10 THz, pour des longueurs d’onde respectives de 3 mm à 30 um. Malgré tout l’intérêt que cette région a suscité au cours de la dernière décennie, de grands obstacles demeurent pour une application plus généralisée de la radiation THz dans les applications d’imagerie. Cette thèse aborde le problème du temps d’acquisition d’une image THz. Notre objectif principal sera de développer des technologies et techniques pour permettre l’imagerie THz en temps réel. Nous débutons cette thèse avec une revue de littérature approfondie sur le sujet de l’imagerie THz en temps réel. Cette revue commence par énumérer plusieurs sources et détecteurs THz qui peuvent immédiatement être utilisés en imagerie THz. Nous détaillons par la suite plusieurs modalités d’imagerie développés au cours des dernières années : 1) Imagerie THz en transmission, en réflexion et de conductivité, 2) imagerie THz pulsée, 3) imagerie THz par tomographie computationnelle et 4) imagerie THz en champ proche. Nous discutons par la suite plus en détail à propos de technologies habilitantes pour l’imagerie THz en temps réel. Pour cela, nous couvrons trois différents axes de recherche développés en littérature : 1)Imagerie en temps réel de spectroscopie THz dans le domaine du temps, 2) caméras THz et 3) imagerie en temps réel avec détecteur à pixel unique. Nous présentons ensuite le système d’imagerie que nous avons développé pour les démonstrations expérimentales de cette thèse. Ce système est basé sur la spectroscopie THz en temps réel et permet donc d’obtenir des images hyperspectrales en amplitude et en phase. Il utilise des antennes photoconductrices pour l’émission et la détection de la radiation THz. En outre, le détecteur est fibré, ce qui permet de le déplacer spatialement pour construire des images. Nous couvrons aussi brièvement plusieurs techniques de fabrication avancées que nous avons utilisées : impression 3D par filament, stéréolithographie, machinage CNC, gravure/découpe laser et transfert de métal par toner. Nous portons ensuite notre attention à l’objectif principal de cette thèse à travers trois démonstrations distinctes. Premièrement, nous concevons des composants THz à faibles pertes en utilisant des matériaux poreux. L’absence de détecteurs THz ultra-sensibles implique que les pertes encourues dans un système d’imagerie sont hautement indésirables. En effet, un moyennage temporel est généralement fait pour extraire de faibles signaux THz sévèrement enfouis sous le bruit technique. Ceci a pour impact de diminuer le nombre d’images à la seconde. ----------Abstract The terahertz band is a region of the electromagnetic spectrum comprising frequencies between 0.1 THz to 10 THz for respective wavelengths of 3 mm to 30 um. Despite all the interest and potential generated in the past decade for applications of this spectral band, there are still major hurdles impeding a wider use of THz radiation for imaging. This thesis addresses the problem of image acquisition time. Our main objective is to develop technologies and techniques to achieve real-time THz imaging. We start this thesis with a comprehensive review of the scientific literature on the topic of realtime THz imaging. This review begins by listing some off-the-shelf THz sources and detectors that could be readily used in THz imaging. We then detail some key imaging modalities developed in the past years: 1) THz transmission, reflection and conductivity imaging, 2) THz pulsed imaging, 3) THz computed tomography, and 4) THz near-field imaging. We then discuss practical enabling technologies for real-time THz imaging: 1) Real-time THz timedomain spectroscopy imaging, 2) THz cameras, and 3) real-time THz single-pixel imaging. We then present our fiber-coupled THz time-domain spectroscopy imaging setup. This system is used throughout the thesis for experimental demonstrations. We also briefly overview many advanced fabrication techniques that we have used, namely fused deposition modeling,stereolithography, CNC machining, laser cutting/engraving and metal transfer using toner. We then turn to the main objective of this thesis with three distinct demonstrations. First, we design low-loss THz components using porous media. The losses incurred in the imaging system are highly undesirable due to the lack of sensitive THz detectors. Indeed, time averaging is generally performed in order to retrieve THz signals severely buried under noise,which in return reduce the framerate. We propose to use low-refractive index subwavelength inclusions (air holes) in a solid dielectric material to build optical components. We show that these components have smaller losses than their all-solid counterparts with otherwise identical properties. We fabricate a planar porous lens and an orbital angular momentum phase plate, and we use our imaging system to characterize their effects on the THz beam. Second, we demonstrate a spectral encoding technique to significantly reduce the required number of measurements to reconstruct a THz image in a single-pixel detection scheme

The 2023 terahertz science and technology roadmap

Terahertz (THz) radiation encompasses a wide spectral range within the electromagnetic spectrum that extends from microwaves to the far infrared (100 GHz–∼30 THz). Within its frequency boundaries exist a broad variety of scientific disciplines that have presented, and continue to present, technical challenges to researchers. During the past 50 years, for instance, the demands of the scientific community have substantially evolved and with a need for advanced instrumentation to support radio astronomy, Earth observation, weather forecasting, security imaging, telecommunications, non-destructive device testing and much more. Furthermore, applications have required an emergence of technology from the laboratory environment to production-scale supply and in-the-field deployments ranging from harsh ground-based locations to deep space. In addressing these requirements, the research and development community has advanced related technology and bridged the transition between electronics and photonics that high frequency operation demands. The multidisciplinary nature of THz work was our stimulus for creating the 2017 THz Science and Technology Roadmap (Dhillon et al 2017 J. Phys. D: Appl. Phys. 50 043001). As one might envisage, though, there remains much to explore both scientifically and technically and the field has continued to develop and expand rapidly. It is timely, therefore, to revise our previous roadmap and in this 2023 version we both provide an update on key developments in established technical areas that have important scientific and public benefit, and highlight new and emerging areas that show particular promise. The developments that we describe thus span from fundamental scientific research, such as THz astronomy and the emergent area of THz quantum optics, to highly applied and commercially and societally impactful subjects that include 6G THz communications, medical imaging, and climate monitoring and prediction. Our Roadmap vision draws upon the expertise and perspective of multiple international specialists that together provide an overview of past developments and the likely challenges facing the field of THz science and technology in future decades. The document is written in a form that is accessible to policy makers who wish to gain an overview of the current state of the THz art, and for the non-specialist and curious who wish to understand available technology and challenges. A such, our experts deliver a 'snapshot' introduction to the current status of the field and provide suggestions for exciting future technical development directions. Ultimately, we intend the Roadmap to portray the advantages and benefits of the THz domain and to stimulate further exploration of the field in support of scientific research and commercial realisation

Accurate quantum transport modelling and epitaxial structure design of high-speed and high-power In0.53Ga0.47As/AlAs double-barrier resonant tunnelling diodes for 300-GHz oscillator sources

Terahertz (THz) wave technology is envisioned as an appealing and conceivable solution in the context of several potential high-impact applications, including sixth generation (6G) and beyond consumer-oriented ultra-broadband multi-gigabit wireless data-links, as well as highresolution imaging, radar, and spectroscopy apparatuses employable in biomedicine, industrial processes, security/defence, and material science. Despite the technological challenges posed by the THz gap, recent scientific advancements suggest the practical viability of THz systems. However, the development of transmitters (Tx) and receivers (Rx) based on compact semiconductor devices operating at THz frequencies is urgently demanded to meet the performance requirements calling from emerging THz applications. Although several are the promising candidates, including high-speed III-V transistors and photo-diodes, resonant tunnelling diode (RTD) technology offers a compact and high performance option in many practical scenarios. However, the main weakness of the technology is currently represented by the low output power capability of RTD THz Tx, which is mainly caused by the underdeveloped and non-optimal device, as well as circuit, design implementation approaches. Indeed, indium phosphide (InP) RTD devices can nowadays deliver only up to around 1 mW of radio-frequency (RF) power at around 300 GHz. In the context of THz wireless data-links, this severely impacts the Tx performance, limiting communication distance and data transfer capabilities which, at the current time, are of the order of few tens of gigabit per second below around 1 m. However, recent research studies suggest that several milliwatt of output power are required to achieve bit-rate capabilities of several tens of gigabits per second and beyond, and to reach several metres of communication distance in common operating conditions. Currently, the shortterm target is set to 5−10 mW of output power at around 300 GHz carrier waves, which would allow bit-rates in excess of 100 Gb/s, as well as wireless communications well above 5 m distance, in first-stage short-range scenarios. In order to reach it, maximisation of the RTD highfrequency RF power capability is of utmost importance. Despite that, reliable epitaxial structure design approaches, as well as accurate physical-based numerical simulation tools, aimed at RF power maximisation in the 300 GHz-band are lacking at the current time. This work aims at proposing practical solutions to address the aforementioned issues. First, a physical-based simulation methodology was developed to accurately and reliably simulate the static current-voltage (IV ) characteristic of indium gallium arsenide/aluminium arsenide (In-GaAs/AlAs) double-barrier RTD devices. The approach relies on the non-equilibrium Green’s function (NEGF) formalism implemented in Silvaco Atlas technology computer-aided design (TCAD) simulation package, requires low computational budget, and allows to correctly model In0.53Ga0.47As/AlAs RTD devices, which are pseudomorphically-grown on lattice-matched to InP substrates, and are commonly employed in oscillators working at around 300 GHz. By selecting the appropriate physical models, and by retrieving the correct materials parameters, together with a suitable discretisation of the associated heterostructure spatial domain through finite-elements, it is shown, by comparing simulation data with experimental results, that the developed numerical approach can reliably compute several quantities of interest that characterise the DC IV curve negative differential resistance (NDR) region, including peak current, peak voltage, and voltage swing, all of which are key parameters in RTD oscillator design. The demonstrated simulation approach was then used to study the impact of epitaxial structure design parameters, including those characterising the double-barrier quantum well, as well as emitter and collector regions, on the electrical properties of the RTD device. In particular, a comprehensive simulation analysis was conducted, and the retrieved output trends discussed based on the heterostructure band diagram, transmission coefficient energy spectrum, charge distribution, and DC current-density voltage (JV) curve. General design guidelines aimed at enhancing the RTD device maximum RF power gain capability are then deduced and discussed. To validate the proposed epitaxial design approach, an In0.53Ga0.47As/AlAs double-barrier RTD epitaxial structure providing several milliwatt of RF power was designed by employing the developed simulation methodology, and experimentally-investigated through the microfabrication of RTD devices and subsequent high-frequency characterisation up to 110 GHz. The analysis, which included fabrication optimisation, reveals an expected RF power performance of up to around 5 mW and 10 mW at 300 GHz for 25 μm2 and 49 μm2-large RTD devices, respectively, which is up to five times higher compared to the current state-of-the-art. Finally, in order to prove the practical employability of the proposed RTDs in oscillator circuits realised employing low-cost photo-lithography, both coplanar waveguide and microstrip inductive stubs are designed through a full three-dimensional electromagnetic simulation analysis. In summary, this work makes and important contribution to the rapidly evolving field of THz RTD technology, and demonstrates the practical feasibility of 300-GHz high-power RTD devices realisation, which will underpin the future development of Tx systems capable of the power levels required in the forthcoming THz applications

Visible Light Communication System

Visible light communication (VLC) systems have become promising candidates to complement conventional radio frequency (RF) systems due to the increasingly saturated RF band and the potentially high data rates that can be achieved by VLC systems. Over the last decade, significant research effort has been directed towards the development of VLC systems due to their numerous advantages over RF systems, such as the availability of simple transmitters (light emitting diodes, LEDs) and receivers (silicon photo detectors), better security at the physical layer, improved energy efficiency due to the dual functionally (i.e., illumination and communication) and hundreds of THz of license-free bandwidth. However, there are several challenges facing VLC systems to achieve high data rates (multi gigabits per second). These challenges include the low modulation bandwidth of the LEDs, co-channel interference (CCI), inter symbol interference (ISI) due to multipath propagation and the light unit (i.e., VLC transmitter) should be ‘‘ON’’ all the time to ensure continuous communication. This thesis investigates a number of techniques to overcome these challenges to design a robust high-speed indoor VLC system with full mobility. A RGB laser diode (LD) is proposed for communication as well as illumination. The main goal of using LD is to enable the VLC system to achieve multi-gigabits data rates when employing a simple modulation technique (such as on-off keying (OOK)), thus adding simplicity to the VLC system. A delay adaptation technique (DAT) is proposed to reduce the delay spread and enable the system to operate at higher data rates (10 Gb/s in our case). The thesis proposes employing angle diversity receivers (ADR) and imaging diversity receivers to mitigate the impact of ISI, CCI, reduce the delay spread (increase the channel bandwidth) and increase the signal to noise ratio (SNR) when the VLC system operates at high data rates (5 Gb/s and 10 Gb/s) under the effects of mobility and multipath dispersion. Moreover, the work introduces and designs three new VLC systems, an ADR relay assisted LD-VLC (ADRR-LD), an imaging relay assisted LD-VLC (IMGR-LD) and a select-the-best imaging relay assisted LD-VLC (SBIMGR-LD), which are modelled and their performance is compared at 10 Gb/s in two VLC room sizes (5m × 5m × 3m and 4m × 8m × 3m). As well as modelling in two different room scenarios: an empty room and a realistic environment were considered. The work also introduces and designs a high-speed fully adaptive VLC system that employs beam steering and computer generated holograms (CGHs), which has the ability to achieve 20 Gb/s with full receiver mobility in a realistic indoor environment. Furthermore, a new high-speed fast adaptive VLC system based on a divide-and-conquer methodology is proposed and integrated with the system to reduce the time required to identify the optimum hologram. The new system has the ability to achieve 25 Gb/s in the worst case scenario. This thesis also proposes four new infrared (IR) systems to support VLC systems when the light is totally turned off. In addition, it introduces the concept of a collaborative VLC/IR optical wireless (OW) system and investigates the impact of partial dimming on the VLC system performance. An adaptive rate technique (ART) is proposed to mitigate the impact of light dimming. Finally, an IROW system (cluster distributed with beam steering) is introduced to collaborate with a VLC system to maintain the target data rate in the case of partial dimming

Millimeter-Wave Band Pass Distributed Amplifier for Low-Cost Active Multi-Beam Antennas

Recently, there have been a great interest in the millimeter-wave (mmW) and terahertz (THz) bands due to the unique features they provide for various applications. For example, the mmW is not significantly affected by the atmospheric constraints and it can penetrate through clothing and other dielectric materials. Therefore, it is suitable for a vast range of imaging applications such as vision, safety, health, environmental studies, security and non-destructive testing. Millimeter-wave imaging systems have been conventionally used for high end applications implementing sophisticated and expensive technologies. Recent advancements in the silicon integrated and low loss material passive technologies have created a great opportunity to study the feasibility of low cost mmW imaging systems. However, there are several challenges to be addressed first. Examples are modeling of active and passive devices and their low performance, highly attenuated channel and poor signal to noise ratio in the mmW. The main objective of this thesis is to investigate and develop new technologies enabling cost-effective implementation of mmW and sub-mmW imaging systems. To achieve this goal, an integrated active Rotman lens architecture is proposed as an ultimate solution to combine the unique properties of a Rotman lens with the superiority of CMOS technology for fabrication of cost effective integrated mmW systems. However, due to the limited sensitivity of on-chip detectors in the mmW, a large number of high gain, wide-band and miniaturized mmW Low Noise Amplifiers (LNA) are required to implement the proposed integrated Rotman lens architecture. A unique solution presented in this thesis is the novel Band Pass Distributed Amplifier (BPDA) topology. In this new topology, by short circuiting the line terminations in a Conventional Distributed Amplifier (CDA), standing waves are created in its artificial transmission lines. Conventionally, standing waves are strongly avoided by carefully matching these lines to 50 Ω in order to prevent instability of the amplifier. This causes that a large portion of the signal be absorbed in these resistive terminations. In this thesis, it is shown that due to presence of highly lossy parasitics of CMOS transistor at the mmW the amplifier stability is inherently achieved. Moreover, by eliminating these lossy and noise terminations in the CDA, the amplifier gain is boosted and its noise figure is reduced. In addition, a considerable decrease in the number of elements enables low power realization of many amplifiers in a small chip area. Using the lumped element model of the transistor, the transfer function of a single stage BPDAs is derived and compared to its conventional counter part. A methodology to design a single stage BPDA to achieve all the design goals is presented. Using the presented design guidelines, amplifiers for different mmW frequencies have been designed, fabricated and tested. Using only 4 transistors, a 60 GHz amplifier is fabricated on a very small chip area of 0.105 mm2 by a low-cost 130 nm CMOS technology. A peak gain of 14.7 dB and a noise figure of 6 dB are measured for this fabricated amplifier. oreover, it is shown that by further circuit optimization, high gain amplification can be realized at frequencies above the cut-off frequency of the transistor. Simulations show 32 and 28 dB gain can be obtained by implementing only 6 transistors using this CMOS technology at 60 and 77 GHz. A 4-stage 85 GHz amplifier is also designed and fabricated and a measured gain of 10 dB at 82 GHz is achieved with a 3 dB bandwidth of 11 GHz from 80 to 91 GHz. A good agreement between the simulated and measured results verifies the accuracy of the design procedure. In addition, a multi-stage wide-band BPDA has been designed to show the ability of the proposed topology for design of wide band mmW amplifiers using the CMOS technology. Simulated gain of 20.5 dB with a considerable 3 dB bandwidth of 38 GHz from 30 to 68 GHz is achieved while the noise figure is less than 6 dB in the whole bandwidth. An amplifier figure of merit is defined in terms of gain, noise figure, chip area, band width and power consumption. The results are compared to those of the state of the art to demonstrate the advantages of the proposed circuit topology and presented design techniques. Finally, a Rotman lens is designed and optimized by choosing a very small Focal Lens Ratio (FL), and a high measured efficiency of greater than 30% is achieved while the lens dimensions are less than 6 mm. The lens is designed and implemented using a low cost Alumina substrate and conventional microstrip lines to ease its integration with the active parts of the system.1 yea