Cross-layer Soft Error Analysis and Mitigation at Nanoscale Technologies

This thesis addresses the challenge of soft error modeling and mitigation in nansoscale technology nodes and pushes the state-of-the-art forward by proposing novel modeling, analyze and mitigation techniques. The proposed soft error sensitivity analysis platform accurately models both error generation and propagation starting from a technology dependent device level simulations all the way to workload dependent application level analysis

Fast and accurate SER estimation for large combinational blocks in early stages of the design

Soft Error Rate (SER) estimation is an important challenge for integrated circuits because of the increased vulnerability brought by technology scaling. This paper presents a methodology to estimate in early stages of the design the susceptibility of combinational circuits to particle strikes. In the core of the framework lies MASkIt , a novel approach that combines signal probabilities with technology characterization to swiftly compute the logical, electrical, and timing masking effects of the circuit under study taking into account all input combinations and pulse widths at once. Signal probabilities are estimated applying a new hybrid approach that integrates heuristics along with selective simulation of reconvergent subnetworks. The experimental results validate our proposed technique, showing a speedup of two orders of magnitude in comparison with traditional fault injection estimation with an average estimation error of 5 percent. Finally, we analyze the vulnerability of the Decoder, Scheduler, ALU, and FPU of an out-of-order, superscalar processor design.This work has been partially supported by the Spanish Ministry of Economy and Competitiveness and Feder Funds under grant TIN2013-44375-R, by the Generalitat de Catalunya under grant FI-DGR 2016, and by the FP7 program of the EU under contract FP7-611404 (CLERECO).Peer ReviewedPostprint (author's final draft

ASSESSING AND IMPROVING THE RELIABILITY AND SECURITY OF CIRCUITS AFFECTED BY NATURAL AND INTENTIONAL FAULTS

The reliability and security vulnerability of modern electronic systems have emerged as concerns due to the increasing natural and intentional interferences. Radiation of high-energy charged particles generated from space environment or packaging materials on the substrate of integrated circuits results in natural faults. As the technology scales down, factors such as critical charge, voltage supply, and frequency change tremendously that increase the sensitivity of integrated circuits to natural faults even for systems operating at sea level. An attacker is able to simulate the impact of natural faults and compromise the circuit or cause denial of service. Therefore, instead of utilizing different approaches to counteract the effect of natural and intentional faults, a unified countermeasure is introduced. The unified countermeasure thwarts the impact of both reliability and security threats without paying the price of more area overhead, power consumption, and required time. This thesis first proposes a systematic analysis method to assess the probability of natural faults propagating the circuit and eventually being latched. The second part of this work focuses on the methods to thwart the impact of intentional faults in cryptosystems. We exploit a power-based side-channel analysis method to analyze the effect of the existing fault detection methods for natural faults on fault attack. Countermeasures for different security threats on cryptosystems are investigated separately. Furthermore, a new micro-architecture is proposed to thwart the combination of fault attacks and side-channel attacks, reducing the fault bypass rate and slowing down the key retrieval speed. The third contribution of this thesis is a unified countermeasure to thwart the impact of both natural faults and attacks. The unified countermeasure utilizes dynamically alternated multiple generator polynomials for the cyclic redundancy check (CRC) codec to resist the reverse engineering attack

IC design for reliability

textAs the feature size of integrated circuits goes down to the nanometer scale, transient and permanent reliability issues are becoming a significant concern for circuit designers. Traditionally, the reliability issues were mostly handled at the device level as a device engineering problem. However, the increasing severity of reliability challenges and higher error rates due to transient upsets favor higher-level design for reliability (DFR). In this work, we develop several methods for DFR at the circuit level. A major source of transient errors is the single event upset (SEU). SEUs are caused by high-energy particles present in the cosmic rays or emitted by radioactive contaminants in the chip packaging materials. When these particles hit a N+/P+ depletion region of an MOS transistor, they may generate a temporary logic fault. Depending on where the MOS transistor is located and what state the circuit is at, an SEU may result in a circuit-level error. We analyze SEUs both in combinational logic and memories (SRAM). For combinational logic circuit, we propose FASER, a Fast Analysis tool of Soft ERror susceptibility for cell-based designs. The efficiency of FASER is achieved through its static and vector-less nature. In order to evaluate the impact of SEU on SRAM, a theory for estimating dynamic noise margins is developed analytically. The results allow predicting the transient error susceptibility of an SRAM cell using a closedform expression. Among the many permanent failure mechanisms that include time-dependent oxide breakdown (TDDB), electro-migration (EM), hot carrier effect (HCE), and negative bias temperature instability (NBTI), NBTI has recently become important. Therefore, the main focus of our work is NBTI. NBTI occurs when the gate of PMOS is negatively biased. The voltage stress across the gate generates interface traps, which degrade the threshold voltage of PMOS. The degraded PMOS may eventually fail to meet timing requirement and cause functional errors. NBTI becomes severe at elevated temperatures. In this dissertation, we propose a NBTI degradation model that takes into account the temperature variation on the chip and gives the accurate estimation of the degraded threshold voltage. In order to account for the degradation of devices, traditional design methods add guard-bands to ensure that the circuit will function properly during its lifetime. However, the worst-case based guard-bands lead to significant penalty in performance. In this dissertation, we propose an effective macromodel-based reliability tracking and management framework, based on a hybrid network of on-chip sensors, consisting of temperature sensors and ring oscillators. The model is concerned specifically with NBTIinduced transistor aging. The key feature of our work, in contrast to the traditional tracking techniques that rely solely on direct measurement of the increase of threshold voltage or circuit delay, is an explicit macromodel which maps operating temperature to circuit degradation (the increase of circuit delay). The macromodel allows for costeffective tracking of reliability using temperature sensors and is also essential for enabling the control loop of the reliability management system. The developed methods improve the over-conservatism of the device-level, worstcase reliability estimation techniques. As the severity of reliability challenges continue to grow with technology scaling, it will become more important for circuit designers/CAD tools to be equipped with the developed methods.Electrical and Computer Engineerin

Reliability-energy-performance optimisation in combinational circuits in presence of soft errors

PhD ThesisThe reliability metric has a direct relationship to the amount of value produced by a circuit, similar to the performance metric. With advances in CMOS technology, digital circuits become increasingly more susceptible to soft errors. Therefore, it is imperative to be able to assess and improve the level of reliability of these circuits. A framework for evaluating and improving the reliability of combinational circuits is proposed, and an interplay between the metrics of reliability, energy and performance is explored. Reliability evaluation is divided into two levels of characterisation: stochastic fault model (SFM) of the component library and a design-specific critical vector model (CVM). The SFM captures the properties of components with regard to the interference which causes error. The CVM is derived from a limited number of simulation runs on the specific design at the design time and producing the reliability metric. The idea is to move the high-complexity problem of the stochastic characterisation of components to the generic part of the design process, and to do it just once for a large number of specific designs. The method is demonstrated on a range of circuits with various structures. A three-way trade-off between reliability, energy, and performance has been discovered; this trade-off facilitates optimisations of circuits and their operating conditions. A technique for improving the reliability of a circuit is proposed, based on adding a slow stage at the primary output. Slow stages have the ability to absorb narrow glitches from prior stages, thus reducing the error probability. Such stages, or filters, suppress most of the glitches generated in prior stages and prevent them from arriving at the primary output of the circuit. Two filter solutions have been developed and analysed. The results show a dramatic improvement in reliability at the expense of minor performance and energy penalties. To alleviate the problem of the time-consuming analogue simulations involved in the proposed method, a simplification technique is proposed. This technique exploits the equivalence between the properties of the gates within a path and the equivalence between paths. On the basis of these equivalences, it is possible to reduce the number of simulation runs. The effectiveness of the proposed technique is evaluated by applying it to different circuits with a representative variety of path topologies. The results show a significant decrease in the time taken to estimate reliability at the expense of a minor decrease in the accuracy of estimation. The simplification technique enables the use of the proposed method in applications with complex circuits.Ministry of Education and Scientific Research in Liby

Cross-Layer Resiliency Modeling and Optimization: A Device to Circuit Approach

The never ending demand for higher performance and lower power consumption pushes the VLSI industry to further scale the technology down. However, further downscaling of technology at nano-scale leads to major challenges. Reduced reliability is one of them, arising from multiple sources e.g. runtime variations, process variation, and transient errors. The objective of this thesis is to tackle unreliability with a cross layer approach from device up to circuit level