2,010 research outputs found
Magnetotransport properties of individual InAs nanowires
We probe the magnetotransport properties of individual InAs nanowires in a
field effect transistor geometry. In the low magnetic field regime we observe
magnetoresistance that is well described by the weak localization (WL)
description in diffusive conductors. The weak localization correction is
modified to weak anti-localization (WAL) as the gate voltage is increased. We
show that the gate voltage can be used to tune the phase coherence length
() and spin-orbit length () by a factor of 2. In the
high field and low temperature regime we observe the mobility of devices can be
modified significantly as a function of magnetic field. We argue that the role
of skipping orbits and the nature of surface scattering is essential in
understanding high field magnetotransport in nanowires
Two-dimensional epitaxial superconductor-semiconductor heterostructures: A platform for topological superconducting networks
Progress in the emergent field of topological superconductivity relies on
synthesis of new material combinations, combining superconductivity, low
density, and spin-orbit coupling (SOC). For example, theory [1-4] indicates
that the interface between a one-dimensional (1D) semiconductor (Sm) with
strong SOC and a superconductor (S) hosts Majorana modes with nontrivial
topological properties [5-8]. Recently, epitaxial growth of Al on InAs
nanowires was shown to yield a high quality S-Sm system with uniformly
transparent interfaces [9] and a hard induced gap, indicted by strongly
suppressed sub gap tunneling conductance [10]. Here we report the realization
of a two-dimensional (2D) InAs/InGaAs heterostructure with epitaxial Al,
yielding a planar S-Sm system with structural and transport characteristics as
good as the epitaxial wires. The realization of 2D epitaxial S-Sm systems
represent a significant advance over wires, allowing extended networks via
top-down processing. Among numerous potential applications, this new material
system can serve as a platform for complex networks of topological
superconductors with gate-controlled Majorana zero modes [1-4]. We demonstrate
gateable Josephson junctions and a highly transparent 2D S-Sm interface based
on the product of excess current and normal state resistance
Characterization of one-dimensional quantum channels in InAs/AlSb
We report the magnetoresistance characteristics of one-dimensional electrons
confined in a single InAs quantum well sandwiched between AlSb barriers. As a
result of a novel nanofabrication scheme that utilizes a 3nm-shallow wet
chemical etching to define the electrostatic lateral confinement, the system is
found to possess three important properties: specular boundary scattering, a
strong lateral confinement potential, and a conducting channel width that is
approximately the lithography width. Ballistic transport phenomena, including
the quenching of the Hall resistance, the last Hall plateau, and a strong
negative bend resistance, are observed at 4K in cross junctions with sharp
corners. In a ring geometry, we have observed Aharonov-Bohm interference that
exhibits characteristics different from those of the GaAs counterpart due to
the ballistic nature of electron transport and the narrowness of the conducting
channel width.Comment: pdf-file, 8 figures, to be published in Phys. Rev.
Selective Area Grown Semiconductor-Superconductor Hybrids: A Basis for Topological Networks
We introduce selective area grown hybrid InAs/Al nanowires based on molecular
beam epitaxy, allowing arbitrary semiconductor-superconductor networks
containing loops and branches. Transport reveals a hard induced gap and
unpoisoned 2e-periodic Coulomb blockade, with temperature dependent 1e features
in agreement with theory. Coulomb peak spacing in parallel magnetic field
displays overshoot, indicating an oscillating discrete near-zero subgap state
consistent with device length. Finally, we investigate a loop network, finding
strong spin-orbit coupling and a coherence length of several microns. These
results demonstrate the potential of this platform for scalable topological
networks among other applications.Comment: NBI QDEV 201
Anisotropic Magneto-conductance of InAs Nanowire: Angle Dependent Suppression of 1D Weak Localization
The magneto-conductance of an InAs nanowire is investigated with respect to
the relative orientation between external magnetic field and the nanowire axis.
It is found that both the perpendicular and the parallel magnetic fields induce
a positive magneto-conductance. Yet the parallel magnetic field induced
longitudinal magneto-conductance has a smaller magnitude. This anisotropic
magneto-transport phenomenon is studied as a function of temperature, magnetic
field strength and at an arbitrary angle between the magnetic field and the
nanowire. We show that the observed effect is in quantitative agreement with
the suppression of one-dimensional (1D) weak localization
Supercurrent in Nb/InAs-Nanowire/Nb Josephson junctions
We report on the fabrication and measurements of planar mesoscopic Josephson
junctions formed by InAs nanowires coupled to superconducting Nb terminals. The
use of Si-doped InAs-nanowires with different bulk carrier concentrations
allowed to tune the properties of the junctions. We have studied the junction
characteristics as a function of temperature, gate voltage, and magnetic field.
In junctions with high doping concentrations in the nanowire Josephson
supercurrent values up to 100\,nA are found. Owing to the use of Nb as
superconductor the Josephson coupling persists at temperatures up to 4K. In all
junctions the critical current monotonously decreased with the magnetic field,
which can be explained by a recently developed theoretical model for the
proximity effect in ultra-small Josephson junctions. For the low-doped
Josephson junctions a control of the critical current by varying the gate
voltage has been demonstrated. We have studied conductance fluctuations in
nanowires coupled to superconducting and normal metal terminals. The
conductance fluctuation amplitude is found to be about 6 times larger in
superconducting contacted nanowires. The enhancement of the conductance
fluctuations is attributed to phase-coherent Andreev reflection as well as to
the large number of phase-coherent channels due to the large superconducting
gap of the Nb electrodes.Comment: 5 Figure, submitted to Journal of Applied Physic
Formation of Long Single Quantum Dots in High Quality InSb Nanowires Grown by Molecular Beam Epitaxy
We report on realization and transport spectroscopy study of single quantum
dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The
nanowires employed are 50-80 nm in diameter and the QDs are defined in the
nanowires between the source and drain contacts on a Si/SiO substrate. We
show that highly tunable QD devices can be realized with the MBE-grown InSb
nanowires and the gate-to-dot capacitance extracted in the many-electron
regimes is scaled linearly with the longitudinal dot size, demonstrating that
the devices are of single InSb nanowire QDs even with a longitudinal size of
~700 nm. In the few-electron regime, the quantum levels in the QDs are resolved
and the Land\'e g-factors extracted for the quantum levels from the
magnetotransport measurements are found to be strongly level-dependent and
fluctuated in a range of 18-48. A spin-orbit coupling strength is extracted
from the magnetic field evolutions of a ground state and its neighboring
excited state in an InSb nanowire QD and is on the order of ~300 eV. Our
results establish that the MBE-grown InSb nanowires are of high crystal quality
and are promising for the use in constructing novel quantum devices, such as
entangled spin qubits, one-dimensional Wigner crystals and topological quantum
computing devices.Comment: 19 pages, 5 figure
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