We introduce selective area grown hybrid InAs/Al nanowires based on molecular
beam epitaxy, allowing arbitrary semiconductor-superconductor networks
containing loops and branches. Transport reveals a hard induced gap and
unpoisoned 2e-periodic Coulomb blockade, with temperature dependent 1e features
in agreement with theory. Coulomb peak spacing in parallel magnetic field
displays overshoot, indicating an oscillating discrete near-zero subgap state
consistent with device length. Finally, we investigate a loop network, finding
strong spin-orbit coupling and a coherence length of several microns. These
results demonstrate the potential of this platform for scalable topological
networks among other applications.Comment: NBI QDEV 201
