160 research outputs found

    Design of Inverter Based CMOS Amplifiers in Deep Nanoscale Technologies

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    In this work, it is proposed a fully differential ring amplifier topology with a deadzone voltage created by a CMOS resistor with a biasing circuit to increase the robustness over PVT variations. The study focuses on analyzing the performance of the ring amplifier over process, temperature, and supply voltage variations, in order to guarantee a viable industrial employment in a 7 nm FinFET CMOS technology node for being used as residue amplifier in ADCs. A ring amplifier is a small modular amplifier, derived from a ring oscillator. It is simple enough that it can quickly be designed using only a few inverters, capacitors, and switches. It can amplify with rail-to-rail output swing, competently charge large capacitive loads using slew-based charging, and scale well in performance according to process trends. In typical process corner, a gain of 72 dB is achieved with a settling time of 150 ps. Throughout the study, the proposed topology is compared with others presented in literature showing better results over corners and presenting a faster response. The proposed topology isn’t yet suitable for industry use, because it presents one corner significantly slower than the rest, namely process corner FF 125 °C, and process corner FS -40 °C with a small oscillation throughout the entire amplification period. Nevertheless, it proved itself to be a promising technique, showing a high gain and a fast settling without oscillation phase, with room for improvement.Neste trabalho, é proposta uma topologia de ring amplifier com a deadzone a ser criada através de uma resistência CMOS com um circuito de polarização para aumentar a robustez para as variações PVT. O estudo foca-se em analisar a performance do ring amplifier nas variações de processo, temperatura e tensão de alimentação, de forma a garantir um uso viável em indústria na tecnologia de 7 nm FinFET CMOS, para ser usado como amplificador de resíduo em ADCs. Um ring amplifier é um pequeno amplificador modular, derivado do ring oscillator. É simples o suficiente para ser facilmente projetado usando apenas poucos inversores, condensadores e interruptores. Consegue amplificar com rail-to-rail output swing, carregar grandes cargas capacitivas com carregamento slew-based e escalar bem em termos de performance de acordo com o processo. No typical process corner, foi obtido um ganho de 72 dB com um tempo de estabilização de 150 ps. Durante o estudo, a topologia proposta é comparada com outras presentes na literatura mostrando melhores resultados over corners e apresentando uma resposta mais rápida. A topologia proposta ainda não está preparada para uso industrial uma vez que apresenta um corner significativamente mais lento que os restantes, nomeadamente, process corner FF 125 °C, e outro process corner, FS -40 °C, com uma pequena oscilação durante todo o período de amplificação. Todavia, provou ser uma técnica promissora, apresentando um ganho elevado e uma rápida estabilização sem fase de oscilação, com espaço para melhoria

    A built-in self-test technique for high speed analog-to-digital converters

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    Fundação para a Ciência e a Tecnologia (FCT) - PhD grant (SFRH/BD/62568/2009

    Mixed Signal Integrated Circuit Design for Custom Sensor Interfacing

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    Low-power analog integrated circuits (ICs) can be utilized at the interface between an analog sensor and a digital system\u27s input to decrease power consumption, increase system accuracy, perform signal processing, and make the necessary adjustments for compatibility between the two devices. This interfacing has typically been done with custom integrated solutions, but advancements in floating-gate technologies have made reconfigurable analog ICs a competitive option. Whether the solution is a custom design or built from a reconfigurable system, digital peripheral circuits are needed to configure their operation for these analog circuits to work with the best accuracy.;Using an analog IC as a front end signal processor between an analog sensor and wireless sensor mote can greatly decrease battery consumption. Processing in the digital domain requires more power than when done on an analog system. An Analog Signal Processor (ASP) can allow the digital wireless mote to remain in sleep mode while the ASP is always listening for an important event. Once this event occurs, the ASP will wake the wireless mote, allowing it to record the event and send radio transmissions if necessary. As most wireless sensor networks employ the use of batteries as a power source, an energy harvesting system in addition to an ASP can be used to further supplement this battery consumption.;This thesis documents the development of mixed-signal integrated circuits for use as interfaces between analog sensors and digital Wireless Sensor Networks (WSNs). The following work outlines, as well as shows the results, of development for sensor interfacing utilizing both custom mixed signal integrated circuits as well as a Field Programmable Analog Array (FPAA) for post fabrication customization. An Analog Signal Processor (ASP) has been used in an Acoustic Vehicle Classification system. To keep these interfacing methods low power, a prototype energy harvesting system using commercial-off-the-shelf (COTS) devices is detailed which has led to the design of a fully integrated solution

    A Low-Power BFSK/OOK Transmitter for Wireless Sensors

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    In recent years, significant improvements in semiconductor technology have allowed consistent development of wireless chipsets in terms of functionality and form factor. This has opened up a broad range of applications for implantable wireless sensors and telemetry devices in multiple categories, such as military, industrial, and medical uses. The nature of these applications often requires the wireless sensors to be low-weight and energy-efficient to achieve long battery life. Among the various functions of these sensors, the communication block, used to transmit the gathered data, is typically the most power-hungry block. In typical wireless sensor networks, transmission range is below 10 meters and required radiated power is below 1 milliwatt. In such cases, power consumption of the frequency-synthesis circuits prior to the power amplifier of the transmitter becomes significant. Reducing this power consumption is currently the focus of various research endeavors. A popular method of achieving this goal is using a direct-modulation transmitter where the generated carrier is directly modulated with baseband data using simple modulation schemes. Among the different variations of direct-modulation transmitters, transmitters using unlocked digitally-controlled oscillators and transmitters with injection or resonator-locked oscillators are widely investigated because of their simple structure. These transmitters can achieve low-power and stable operation either with the help of recalibration or by sacrificing tuning capability. In contrast, phase-locked-loop-based (PLL) transmitters are less researched. The PLL uses a feedback loop to lock the carrier to a reference frequency with a programmable ratio and thus achieves good frequency stability and convenient tunability. This work focuses on PLL-based transmitters. The initial goal of this work is to reduce the power consumption of the oscillator and frequency divider, the two most power-consuming blocks in a PLL. Novel topologies for these two blocks are proposed which achieve ultra-low-power operation. Along with measured performance, mathematical analysis to derive rule-of-thumb design approaches are presented. Finally, the full transmitter is implemented using these blocks in a 130 nanometer CMOS process and is successfully tested for low-power operation

    Power-Efficient and High-Performance Cicruit Techniques for On-Chip Voltage Regulation and Low-Voltage Filtering

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    This dissertation focuses on two projects. The first one is a power supply rejection (PSR) enhanced with fast settling time (TS) bulk-driven feedforward (BDFF) capacitor-less (CL) low-dropout (LDO) regulator. The second project is a high bandwidth (BW) power adjustable low-voltage (LV) active-RC 4th -order Butterworth low pass filter (LPF). As technology improves, faster and more accurate LDOs with high PSR are going to be required for future on-chip applications and systems.The proposed BDFF CL-LDO will accomplish an improved PSR without degrading TS. This would be achieved by injecting supply noise through the pass device’s bulk terminal in order to cancel the supply noise at the output. The supply injection will be achieved by creating a feedforward path, which compared to feedback paths, that doesn’t degrade stability and therefore allows for faster dynamic performance. A high gain control loop would be used to maintain a high accuracy and dc performance, such as line/load regulation. The proposed CL-LDO will target a PSR better than – 90 dB at low frequencies and – 60 dB at 1 MHz for 50 mA of load current (IvL). The CL-LDO will target a loop gain higher than 90 dB, leading to an improved line and load regulation, and unity-gain frequency (UGF) higher than 20 MHz, which will allow a TS faster than 500 ns. The CL-LDO is going to be fabricated in a CMOS 130 nm technology; consume a quiescent current (IQ) of less than 50 μA; for a dropout voltage of 200 mV and an IvL of 50 mA. As technology scales down, speed and performance requirements increase for on-chip communication systems that reflect the current demand for high speed data-oriented applications. However, in small technologies, it becomes harder to achieve high gain and high speed at the same time because the supply voltage (VvDvD) decreases leaving no room for conventional high gain CMOS structures. The proposed active-RC LPF will accomplish a LV high BW operation that would allow such disadvantages to be overcome. The LPF will be implemented using an active RC structure that allows for the high linearity such communication systems demand. In addition, built-in BW and power configurability would address the demands for increased flexibility usually required in such systems. The proposed LV LPF will target a configurable cut-off frequency (ƒо) of 20/40/80/160 MHz with tuning capabilities and power adjustability for each ƒо. The filter will be fabricated in a CMOS 130 nm technology. The filter characteristics are as following: 4th -order, active-RC, LPF, Butterworth response, VDD = 0.6 V, THD higher than 40 dB and a third-order input intercept point (IIP3) higher than 10 dBm
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