763 research outputs found
Reliable Low-Power High Performance Spintronic Memories
Moores Gesetz folgend, ist es der Chipindustrie in den letzten fĂĽnf Jahrzehnten gelungen, ein
explosionsartiges Wachstum zu erreichen. Dies hatte ebenso einen exponentiellen Anstieg der
Nachfrage von Speicherkomponenten zur Folge, was wiederum zu speicherlastigen Chips in
den heutigen Computersystemen fĂĽhrt. Allerdings stellen traditionelle on-Chip Speichertech-
nologien wie Static Random Access Memories (SRAMs), Dynamic Random Access Memories
(DRAMs) und Flip-Flops eine Herausforderung in Bezug auf Skalierbarkeit, Verlustleistung
und Zuverlässigkeit dar. Eben jene Herausforderungen und die überwältigende Nachfrage
nach höherer Performanz und Integrationsdichte des on-Chip Speichers motivieren Forscher,
nach neuen nichtflĂĽchtigen Speichertechnologien zu suchen. Aufkommende spintronische Spe-
ichertechnologien wie Spin Orbit Torque (SOT) und Spin Transfer Torque (STT) erhielten
in den letzten Jahren eine hohe Aufmerksamkeit, da sie eine Reihe an Vorteilen bieten. Dazu
gehören Nichtflüchtigkeit, Skalierbarkeit, hohe Beständigkeit, CMOS Kompatibilität und Unan-
fälligkeit gegenüber Soft-Errors. In der Spintronik repräsentiert der Spin eines Elektrons dessen
Information. Das Datum wird durch die Höhe des Widerstandes gespeichert, welche sich durch
das Anlegen eines polarisierten Stroms an das Speichermedium verändern lässt. Das Prob-
lem der statischen Leistung gehen die Speichergeräte sowohl durch deren verlustleistungsfreie
Eigenschaft, als auch durch ihr Standard- Aus/Sofort-Ein Verhalten an. Nichtsdestotrotz sind
noch andere Probleme, wie die hohe Zugriffslatenz und die Energieaufnahme zu lösen, bevor
sie eine verbreitete Anwendung finden können. Um diesen Problemen gerecht zu werden, sind
neue Computerparadigmen, -architekturen und -entwurfsphilosophien notwendig.
Die hohe Zugriffslatenz der Spintroniktechnologie ist auf eine vergleichsweise lange Schalt-
dauer zurĂĽckzufĂĽhren, welche die von konventionellem SRAM ĂĽbersteigt. Des Weiteren ist auf
Grund des stochastischen Schaltvorgangs der Speicherzelle und des Einflusses der Prozessvari-
ation ein nicht zu vernachlässigender Zeitraum dafür erforderlich. In diesem Zeitraum wird ein
konstanter Schreibstrom durch die Bitzelle geleitet, um den Schaltvorgang zu gewährleisten.
Dieser Vorgang verursacht eine hohe Energieaufnahme. FĂĽr die Leseoperation wird gleicher-
maßen ein beachtliches Zeitfenster benötigt, ebenfalls bedingt durch den Einfluss der Prozess-
variation. Dem gegenüber stehen diverse Zuverlässigkeitsprobleme. Dazu gehören unter An-
derem die Leseintereferenz und andere Degenerationspobleme, wie das des Time Dependent Di-
electric Breakdowns (TDDB). Diese Zuverlässigkeitsprobleme sind wiederum auf die benötigten
längeren Schaltzeiten zurückzuführen, welche in der Folge auch einen über längere Zeit an-
liegenden Lese- bzw. Schreibstrom implizieren. Es ist daher notwendig, sowohl die Energie, als
auch die Latenz zur Steigerung der Zuverlässigkeit zu reduzieren, um daraus einen potenziellen
Kandidaten fĂĽr ein on-Chip Speichersystem zu machen.
In dieser Dissertation werden wir Entwurfsstrategien vorstellen, welche das Ziel verfolgen,
die Herausforderungen des Cache-, Register- und Flip-Flop-Entwurfs anzugehen. Dies erre-
ichen wir unter Zuhilfenahme eines Cross-Layer Ansatzes. FĂĽr Caches entwickelten wir ver-
schiedene Ansätze auf Schaltkreisebene, welche sowohl auf der Speicherarchitekturebene, als
auch auf der Systemebene in Bezug auf Energieaufnahme, Performanzsteigerung und Zuver-
lässigkeitverbesserung evaluiert werden. Wir entwickeln eine Selbstabschalttechnik, sowohl für
die Lese-, als auch die Schreiboperation von Caches. Diese ist in der Lage, den Abschluss der
entsprechenden Operation dynamisch zu ermitteln. Nachdem der Abschluss erkannt wurde,
wird die Lese- bzw. Schreiboperation sofort gestoppt, um Energie zu sparen. Zusätzlich
limitiert die Selbstabschalttechnik die Dauer des Stromflusses durch die Speicherzelle, was
wiederum das Auftreten von TDDB und Leseinterferenz bei Schreib- bzw. Leseoperationen re-
duziert. Zur Verbesserung der Schreiblatenz heben wir den Schreibstrom an der Bitzelle an, um den magnetischen Schaltprozess zu beschleunigen. Um registerbankspezifische Anforderungen
zu berücksichtigen, haben wir zusätzlich eine Multiport-Speicherarchitektur entworfen, welche
eine einzigartige Eigenschaft der SOT-Zelle ausnutzt, um simultan Lese- und Schreiboperatio-
nen auszuführen. Es ist daher möglich Lese/Schreib- Konfilkte auf Bitzellen-Ebene zu lösen,
was sich wiederum in einer sehr viel einfacheren Multiport- Registerbankarchitektur nieder-
schlägt.
Zusätzlich zu den Speicheransätzen haben wir ebenfalls zwei Flip-Flop-Architekturen vorgestellt.
Die erste ist eine nichtflĂĽchtige non-Shadow Flip-Flop-Architektur, welche die Speicherzelle als
aktive Komponente nutzt. Dies ermöglicht das sofortige An- und Ausschalten der Versorgungss-
pannung und ist daher besonders gut fĂĽr aggressives Powergating geeignet. Alles in Allem zeigt
der vorgestellte Flip-Flop-Entwurf eine ähnliche Timing-Charakteristik wie die konventioneller
CMOS Flip-Flops auf. Jedoch erlaubt er zur selben Zeit eine signifikante Reduktion der statis-
chen Leistungsaufnahme im Vergleich zu nichtflĂĽchtigen Shadow- Flip-Flops. Die zweite ist eine
fehlertolerante Flip-Flop-Architektur, welche sich unanfällig gegenüber diversen Defekten und
Fehlern verhält. Die Leistungsfähigkeit aller vorgestellten Techniken wird durch ausführliche
Simulationen auf Schaltkreisebene verdeutlicht, welche weiter durch detaillierte Evaluationen
auf Systemebene untermauert werden. Im Allgemeinen konnten wir verschiedene Techniken en-
twickeln, die erhebliche Verbesserungen in Bezug auf Performanz, Energie und Zuverlässigkeit
von spintronischen on-Chip Speichern, wie Caches, Register und Flip-Flops erreichen
Programmable CMOS Analog-to-Digital Converter Design and Testability
In this work, a programmable second order oversampling CMOS delta-sigma analog-to-digital converter (ADC) design in 0.5µm n-well CMOS processes is presented for integration in sensor nodes for wireless sensor networks. The digital cascaded integrator comb (CIC) decimation filter is designed to operate at three different oversampling ratios of 16, 32 and 64 to give three different resolutions of 9, 12 and 14 bits, respectively which impact the power consumption of the sensor nodes. Since the major part of power consumed in the CIC decimator is by the integrators, an alternate design is introduced by inserting coder circuits and reusing the same integrators for different resolutions and oversampling ratios to reduce power consumption. The measured peak signal-to-noise ratio (SNR) for the designed second order delta-sigma modulator is 75.6dB at an oversampling ratio of 64, 62.3dB at an oversampling ratio of 32 and 45.3dB at an oversampling ratio of 16. The implementation of a built-in current sensor (BICS) which takes into account the increased background current of defect-free circuits and the effects of process variation on ΔIDDQ testing of CMOS data converters is also presented. The BICS uses frequency as the output for fault detection in CUT. A fault is detected when the output frequency deviates more than ±10% from the reference frequency. The output frequencies of the BICS for various model parameters are simulated to check for the effect of process variation on the frequency deviation. A design for on-chip testability of CMOS ADC by linear ramp histogram technique using synchronous counter as register in code detection unit (CDU) is also presented. A brief overview of the histogram technique, the formulae used to calculate the ADC parameters, the design implemented in 0.5µm n-well CMOS process, the results and effectiveness of the design are described. Registers in this design are replaced by 6T-SRAM cells and a hardware optimized on-chip testability of CMOS ADC by linear ramp histogram technique using 6T-SRAM as register in CDU is presented. The on-chip linear ramp histogram technique can be seamlessly combined with ΔIDDQ technique for improved testability, increased fault coverage and reliable operation
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Probabilistic design for emerging memory and nanometer-scale logic
As semiconductor technology has scaled down, the impact of stochastic behavior in very large scale integrated circuits (VLSI) has become an ever-more important concern. This dissertation investigates two distinct classes of problems that require the use of probabilistic methods and models: (1) Modeling and exploiting stochastic behavior in advanced memory technologies; (2) Probabilistic modeling of faults due to on-chip voltage variation.
This dissertation first investigates the unique physics-level stochasticity of spin-transfer torque magnetic RAM (STT-RAM). The write process of STT-RAM is stochastic: specifically, the write time of a bitcell varies significantly. The wors-tcase approach, which uses the longest write pulse duration, guarantees a successful write; however, it introduces significant energy overhead due to excessive margins since the average write pulse duration is far shorter than the worst-case pulse duration. This dissertation develops novel circuit techniques to exploit the stochastic properties of STT-RAM write operation for energy savings by moving away from the worst-case approach to dynamic strategies while maintaining the required low error rate. The first contribution is a variable energy write (VEW) architecture that effectively exploits the wide distribution of write time to greatly reduce energy via a mechanism that checks the instantaneous state of the bitcell and deactivates the write current once the correct value has registered. The second contribution is a multiple attempt write (MAW) strategy that utilizes the asymptotic temporal stochastic independence of repeated switching events to achieve a dramatic reduction in energy. The proposed architectures are evaluated using a compact STT-RAM cell model. Analysis indicates that VEW succeeded in reducing the write energy by 94.7% with approximately 1% relative area overhead under an efficient design methodology compared with the conventional designs relying on the worst case approach. MAW reduced the overall write energy by 94.6% with approximately 0.05% relative area overhead.
This dissertation then addresses the problem of probabilistic modeling of faults due to on-chip voltage variations. The power supply voltage variation can increase gate delay, resulting in timing faults on near-critical paths. These low-level faults ultimately propagate to architecture and application levels, often leading to critical system failures. Developing an accurate fault model and injection tool that generates and propagates faults from circuit- to gate-level is important for accurately predicting the resulting system failures. This is challenging since the model needs to accurately capture the physical characteristics at the circuit level that define the likelihood of a fault and use that information to guide the injection with the proper probability. At the same time, the analysis and fault injections need to be computationally manageable to allow analysis of realistic systems under realistic workloads. The conventional fault models rely on either Monte Carlo sampling or time-consuming runtime simulation using the worst-case voltage drop. To overcome simulation overheads of runtime circuit-level simulation, a novel two-phase approach is proposed. The main idea is that circuit characterization can be done before simulation. The result of pre-characterization is used at runtime via a form of look-up to enable gate-level efficiency. The two-phase methodology is time-efficient but may require high memory unless the look-up tables are carefully optimized. This dissertation also develops the fault probability estimation based on workload-specific voltage distribution, rather than a fixed worst-case voltage. The proposed methodology is implemented on an OpenSPARC design targeting on a 32nm technology node. Analysis indicates the proposed fault modeling and injection flow reduces runtime overhead by 24X compared to the previously best-known gate-level fault simulator while having circuit level accuracy.Electrical and Computer Engineerin
Digital liquid level transducer
Digital liquid level transducer for ultrasonic binary measurement
Design of variation-tolerant synchronizers for multiple clock and voltage domains
PhD ThesisParametric variability increasingly affects the performance of electronic circuits as
the fabrication technology has reached the level of 32nm and beyond. These
parameters may include transistor Process parameters (such as threshold
voltage), supply Voltage and Temperature (PVT), all of which could have a
significant impact on the speed and power consumption of the circuit, particularly
if the variations exceed the design margins. As systems are designed with more
asynchronous protocols, there is a need for highly robust synchronizers and
arbiters. These components are often used as interfaces between communication
links of different timing domains as well as sampling devices for asynchronous
inputs coming from external components. These applications have created a need
for new robust designs of synchronizers and arbiters that can tolerate process,
voltage and temperature variations.
The aim of this study was to investigate how synchronizers and arbiters should be
designed to tolerate parametric variations. All investigations focused mainly on
circuit-level and transistor level designs and were modeled and simulated in the
UMC90nm CMOS technology process. Analog simulations were used to measure
timing parameters and power consumption along with a “Monte Carlo” statistical
analysis to account for process variations.
Two main components of synchronizers and arbiters were primarily investigated:
flip-flop and mutual-exclusion element (MUTEX). Both components can violate the
input timing conditions, setup and hold window times, which could cause
metastability inside their bistable elements and possibly end in failures. The
mean-time between failures is an important reliability feature of any synchronizer
delay through the synchronizer.
The MUTEX study focused on the classical circuit, in addition to a number of
tolerance, based on increasing internal gain by adding current sources, reducing
the capacitive loading, boosting the transconductance of the latch, compensating
the existing Miller capacitance, and adding asymmetry to maneuver the metastable
point. The results showed that some circuits had little or almost no improvements,
while five techniques showed significant improvements by reducing Ď„ and
maintaining high tolerance.
Three design approaches are proposed to provide variation-tolerant
synchronizers. wagging synchronizer proposed to First, the is significantly
increase reliability over that of the conventional two flip-flop synchronizer. The
robustness of the wagging technique can be enhanced by using robust Ď„ latches or
adding one more cycle of synchronization. The second approach is the
Metastability Auto-Detection and Correction (MADAC) latch which relies on swiftly
detecting a metastable event and correcting it by enforcing the previously stored
logic value. This technique significantly reduces the resolution time down from
uncertain
synchronization technique is proposed to transfer signals between Multiple-
Voltage Multiple-Clock Domains (MVD/MCD) that do not require conventional
level-shifters between the domains or multiple power supplies within each
domain. This interface circuit uses a synchronous set and feedback reset protocol
which provides level-shifting and synchronization of all signals between the
domains, from a wide range of voltage-supplies and clock frequencies.
Overall, synchronizer circuits can tolerate variations to a greater extent by
employing the wagging technique or using a MADAC latch, while MUTEX tolerance
can suffice with small circuit modifications. Communication between MVD/MCD
can be achieved by an asynchronous handshake
without a need for adding level-shifters.The Saudi Arabian Embassy in London,
Umm Al-Qura University, Saudi Arabi
ASDTIC control and standardized interface circuits applied to buck, parallel and buck-boost dc to dc power converters
Versatile standardized pulse modulation nondissipatively regulated control signal processing circuits were applied to three most commonly used dc to dc power converter configurations: (1) the series switching buck-regulator, (2) the pulse modulated parallel inverter, and (3) the buck-boost converter. The unique control concept and the commonality of control functions for all switching regulators have resulted in improved static and dynamic performance and control circuit standardization. New power-circuit technology was also applied to enhance reliability and to achieve optimum weight and efficiency
Laminated ferrite memory system
Feasibility study of random access laminated ferrite memory system for spacecraft us
Analog, hybrid, and digital simulation
Analog, hybrid, and digital computerized simulation technique
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