Terahertz Microstrip Elevated Stack Antenna Technology on GaN-on-Low Resistivity Silicon Substrates for TMIC

In this paper we demonstrate a THz microstrip stack antenna on GaN-on-low resistivity silicon substrates (ρ < 40 Ω.cm). To reduce losses caused by the substrate and to enhance performance of the integrated antenna at THz frequencies, the driven patch is shielded by silicon nitride and gold in addition to a layer of benzocyclobutene (BCB). A second circular patch is elevated in air using gold posts, making this design a stack configuration. The demonstrated antenna shows a measured resonance frequency in agreement with the modeling at 0.27 THz and a measured S11 as low as −18 dB was obtained. A directivity, gain and radiation efficiency of 8.3 dB, 3.4 dB, and 32% respectively was exhibited from the 3D EM model. To the authors' knowledge, this is the first demonstrated THz integrated microstrip stack antenna for TMIC (THz Monolithic Integrated Circuits) technology; the developed technology is suitable for high performance III-V material on low resistivity/high dielectric substrates

Terahertz Technology and Its Applications

The Terahertz frequency range (0.1 – 10)THz has demonstrated to provide many opportunities in prominent research fields such as high-speed communications, biomedicine, sensing, and imaging. This spectral range, lying between electronics and photonics, has been historically known as “terahertz gap” because of the lack of experimental as well as fabrication technologies. However, many efforts are now being carried out worldwide in order improve technology working at this frequency range. This book represents a mechanism to highlight some of the work being done within this range of the electromagnetic spectrum. The topics covered include non-destructive testing, teraherz imaging and sensing, among others

A 183-GHz Schottky diode receiver with 4 dB noise figure

Atmospheric science based on space-borne\ua0millimeter wave measurements require reliable and state-of-the art\ua0receivers. In particular, the water vapor line at 183.3 GHz\ua0motivates the development of sensitive mixers at this frequency.\ua0Traditional assembly techniques employed in the production of\ua0Schottky diode receivers involve flip-chip mounting and soldering\ua0of discrete dies, which prohibit the implementation of reliable and\ua0repeatable production processes. In this work, we present a\ua0subharmonic 183 GHz mixer implementing a repeatable assembly\ua0method using beamlead Schottky diodes. The mixer was\ua0integrated with a InP HEMT MMIC low noise intermediate\ua0frequency amplifier resulting in a record-low receiver noise\ua0temperature of 450 K at 1 mW of local oscillator power measured\ua0at room-temperature. The measured Allan time was 10 s and the\ua0third order local oscillator spurious power was less than -60 dBm.\ua0The proposed assembly method is of particular importance for\ua0space-borne missions but also applicable to a wide range of\ua0terahertz applications

Circuit Modules for CMOS High-Power Short Pulse Generators

High-power short electrical pulses are important for high-performance functionality integration, such as the development of microelectromechanical/nanoelectromechanical systems (MEMS/NEMS), system on chip (SoC) and lab on chip (LoC). Many of these applications need high-power (low impedance load) short electrical pulses, in addition to CMOS digital intelligence. Therefore, it is of great interest to develop new circuit techniques to generate high-power high-voltage short electrical pulses on-chip. Results on pulse forming line (PFL) based CMOS pulse generator studies are reported. Through simulations, the effects of PFL length, switch speed and switch resistance on the output pulses are clarified. CMOS pulse generators are modeled and analyzed with on-chip transmission lines (TLs) as PFLs and CMOS transistors as switches. In the 0.13 um CMOS process with a 500 um long PFL, post layout simulations show that pulses of 10.4 ps width can be obtained. High-voltage and high-power outputs can be generated with other pulsed power circuits, such as Blumlein PFLs with stacked MOSFET switches. Thus, the PFL circuit significantly extends short and high-power pulse generation capabilities of CMOS technologies. A CMOS circuit with a 4 mm long PFL is implemented in the commercial 0.13 um technology. Pulses of ~ 160 ps duration and 110-200 mV amplitude on a 50 Ohms load are obtained when the power supply is tuned from 1.2 V to 2.0 V. Measurement Instruments limitations are probably the main reasons for the discrepancies among measurement and simulation results. A four-stage charge pump is presented as high voltage bias of the Blumlein PFLs pulse generator. Since Schottky diode has low forward drop voltage (~ 0.3V), using it as charge transfer cell can have high charge pumping gain and avoid additional control circuit for switch. A four-stage charge pump with Schottky diode as charge transfer cell is implemented in a commercial 0.13 um technology. Charge pump output and efficiency under different power supply voltages, load currents and clock frequencies are measured and presented. The maximum output voltage is ~ 6 V and the maximum efficiency is ~ 50%

Frequency tunable electronic sources working at room temperature in the 1 to 3 THz band

Compact, room temperature terahertz sources are much needed in the 1 to 3 THz band for developing multi-pixel heterodyne receivers for astrophysics and planetary science or for building short-range high spatial resolution THz imaging systems able to see through low water content and non metallic materials, smoke or dust for a variety of applications ranging from the inspection of art artifacts to the detection of masked or concealed objects. All solid-sate electronic sources based on a W-band synthesizer followed by a high-power W-band amplifier and a cascade of Schottky diode based THz frequency multipliers are now capable of producing more than 1 mW at 0.9THz, 50 μW at 2 THz and 18 μW at 2.6 THz without the need of any cryogenic system. These sources are frequency agile and have a relative bandwidth of 10 to 15%, limited by the high power W-band amplifiers. The paper will present the latest developments of this technology and its perspective in terms of frequency range, bandwidth and power

Photodetectors

In this book some recent advances in development of photodetectors and photodetection systems for specific applications are included. In the first section of the book nine different types of photodetectors and their characteristics are presented. Next, some theoretical aspects and simulations are discussed. The last eight chapters are devoted to the development of photodetection systems for imaging, particle size analysis, transfers of time, measurement of vibrations, magnetic field, polarization of light, and particle energy. The book is addressed to students, engineers, and researchers working in the field of photonics and advanced technologies

15 Gb/s 50-cm wireless link using a high power compact III-V 84 GHz transmitter

This paper reports on a 15-Gb/s wireless link that employs a high-power resonant tunneling diode (RTD) oscillator as a transmitter (Tx). The fundamental carrier frequency is 84 GHz and the maximum output power is 2 mW without any power amplifier. The reported performance is over a 50-cm link, with simple amplitude shift keying modulation utilized. The 15-Gb/s data link shows correctable bit error rate (BER) of 4.1 x 10⁻³, while the lower data rates of 10 and 5 Gb/s show a BER of 3.6 x 10⁻⁴ and 1.0 x 10⁻⁶, respectively. These results demonstrate that the RTD Tx is a promising candidate for the next-generation low-cost, compact, ultrahigh data rates wireless communication systems