Ultra-low-voltage self-body biasing scheme and its application to basic arithmetic circuits

The gate level body biasing (GLBB) is assessed in the context of ultra-low-voltage logic designs. To this purpose, a GLBB mirror full adder is implemented by using a commercial 45 nm bulk CMOS triple-well technology and compared to equivalent conventional zero body-biased CMOS and dynamic threshold voltage MOSFET (DTMOS) circuits under different running conditions. Postlayout simulations demonstrate that, at the parity of leakage power consumption, the GLBB technique exhibits a significant concurrent reduction of the energy per operation and the delay in comparison to the conventional CMOS and DTMOS approaches. The silicon area required by the GLBB full adder is halved with respect to the equivalent DTMOS implementation, but it is higher in comparison to conventional CMOS design. Performed analysis also proves that the GLBB solution exhibits a high level of robustness against temperature fluctuations and process variations

New Possibilities In Low-voltage Analog Circuit Design Using Dtmos Transistors

(Doktora) -- İstanbul Teknik Üniversitesi, Fen Bilimleri Enstitüsü, 2013(PhD) -- İstanbul Technical University, Institute of Science and Technology, 2013Bu çalışmada DTMOS yaklaşımı çok düşük besleme gerilimlerinde çalışan çok düşük güç tüketimli devrelere başarıyla uygulanmıştır. Tasarlanan devreler arasında OTA, OP-AMP, CCII gibi analog aktif yapı blokları, çarpma devresi, sadece-MOS yapılar gibi devreler bulunmaktadır. Tasarlanan devreler SPICE benzetimleri ile doğrulanmıştır. İleri yönde gövde kutuplamaya bağlı olarak DTMOS transistorun yapısından kaynaklanan, efektif olarak düşük eşik gerilimli çalışma özelliği nedeniyle, çok düşük güç tüketimli ve çok düşük gerilimli devrelerde DTMOS yaklaşımının geçerli bir alternatif olduğu bu çalışmayla gösterilmiştir. DTMOS yaklaşımının geniş bir alanda çeşitlilik gösteren analog devre yapılarında çok düşük besleme gerilimlerinde bile kabul edilebilir bir performansla kullanılabileceği bulunmuştur.In this study, DTMOS approach to the design of ultra low-voltage and ultra low-power analog circuits, has been successfully applied to the circuits ranging from EEG filtering circuits, speech processing filters in hearing aids, multipliers, analog active building blocks: OTA, OP-AMP, CCII to MOS-only circuits. The proposed circuits are verified with SPICE simulations. It is found that in designing ultra low-voltage, ultra low-power analog circuits, DTMOS approach is a viable alternative due to its inherent characteristic of effective low threshold voltage behaviour under forward body bias. This approach can be applied to several analog application subjects with acceptable performance under even ultra low supply voltages.DoktoraPh

Ultra-Low-Power Sensors and Receivers for IoT Applications

The combination of ultra-low power analog front-ends and CMOS-compatible transducers enable new applications, such as environmental monitors, household appliances, health trackers, etc. that are seamlessly integrated into our daily lives. Furthermore, wireless connectivity allows many of these sensors to operate both independently and collectively. These techniques collectively fulfil the recent surge of internet-of-things (IoT) applications that have the potential to fundamentally change daily life for millions of people.In this dissertation, the circuit and system design of wireless receivers and sensors is presented that explores the challenges of implementing long lifespan, high accuracy, and large coverage range IoT sensor networks. The first is a wake-up receiver (WuRX), which continuously monitors the RF environment to wake up a higher-power radio upon detection of a predetermined RF signature. This work both improves sensitivity and reduces power over prior art through a multi-faceted design featuring an impedance transformation network with large passive voltage gain, an active envelope detector with high input impedance to facilitate large passive voltage gain, a low-power precision comparator, and a low-leakage digital baseband correlator.Although pushing the prior WuRX performance boundary by orders of magnitude, the first work shows moderate sensitivity, inferior temperature robustness, and large area with external lumped components. Thus, the second work shows a miniaturized WuRX that is temperature-compensated, yet still consumes only nano-watt power and millimeter area while operating at 9 GHz. To further reduce the area, a global common-mode feedback is utilized across the envelope detector and baseband amplifier that eliminates the need for off-chip ac-coupling components. Multiple temperature-compensation techniques are proposed to maintain constant bandwidth of the signal path and constant clock frequency. Both WuRXs operate at 0.4 V supply, consume near-zero power and achieve ~-70 dBm sensitivity.Lastly, the first reported CMOS 2-in-1 relative humidity and temperature sensor is presented. A unified analog front-end interfaces on-chip transducers and converts the inputs into a frequency vis a high-linearity frequency-locked loop. An incomplete-settling switched-capacitor-based Wheatstone bridge is proposed to sense the inputs in a power-efficient fashion

Design of Low Leakage Multi Threshold (Vth) CMOS Level Shifter

In this paper, a low leakage multi Vth level shifter is designed for robust voltage shifting from sub threshold to above threshold domain using MTCMOS technique and sleepy keeper. MTCMOS is an effective circuit level technique that improves the performance and design by utilizing both low and high threshold voltage transistors. Leakage power dissipation has become an overriding concern for VLSI circuit designers. In this a “sleepy keeper” approach is preferred which reduces the leakage current while saving exact logic state. The new  low-power level shifter using sleepy keeper is compared with the previous work for different values of the lower supply voltage. When the circuits are individually analyzed for power consumption at 45nm CMOS technology, the new level shifter offer significant power savings up to 37% as compared to the previous work. Alternatively, when the circuits are individually analyzed for minimum propagation delay, speed is enhanced by up to 48% with  our approach to the circuit. All the simulation results are based on 45nm CMOS technology and  simulated in cadence tool.DOI:http://dx.doi.org/10.11591/ijece.v3i5.316

A Combined Gate Replacement and Input Vector Control Approach

Due to the increasing role of leakage power in CMOS circuit's total power dissipation, leakage reduction has attracted a lot of attention recently. Input vector control (IVC) takes advantage of the transistor stack effect to apply the minimum leakage vector (MLV) to the primary inputs of the circuit during the standby mode. However, IVC techniques become less effective for circuits of large logic depth because theMLV at primary inputs has little impact on internal gates at high logic level. In this paper, we propose a technique to overcome this limitation by directly controlling the inputs to the internal gates that are in their worst leakage states. Specifically, we propose a gate replacement technique that replaces such gates by other library gates while maintaining the circuit's correct functionality at the active mode. This modification of the circuit does not require changes of the design flow, but it opens the door for further leakage reduction, when the MLV is not effective. We then describe a divideand- conquer approach that combines the gate replacement and input vector control techniques. It integrates an algorithm that finds the optimal MLV for tree circuits, a fast gate replacement heuristic, and a genetic algorithm that connects the tree circuits. We have conducted experiments on all the MCNC91 benchmark circuits. The results reveal that 1) the gate replacement technique itself can provide 10% more leakage current reduction over the best known IVC methods with no delay penalty and little area increase; 2) the divide-and-conquer approach outperforms the best pure IVC method by 24% and the existing control point insertion method by 12%; 3) when we obtain the optimal MLV for small circuits from exhaustive search, the proposed gate replacement alone can still reduce leakage current by 13% while the divide-and-conquer approach reduces 17%

ULTRALOW-POWER, LOW-VOLTAGE DIGITAL CIRCUITS FOR BIOMEDICAL SENSOR NODES

Ph.DDOCTOR OF PHILOSOPH

Ultra-low Power FinFET SRAM Cell with improved stability suitable for low power applications

In this paper, a new 11T SRAM cell using FinFET technology has been proposed, the basic component of the cell is the 6T SRAM cell with 4 NMOS access transistors to improve the stability and also makes it a dual port memory cell. The proposed cell uses a header scheme in which one extra PMOS transistor is used which is biased at different voltages to improve the read and write stability thus, helps in reducing the leakage power and active power. The cell shows improvement in RSNM (Read Static Noise Margin) with LP8T by 2.39x at sub-threshold voltage 2.68x with D6T SRAM cell, 5.5x with TG8T. The WSNM (Write Static Noise Margin) and HM (Hold Margin) of the SRAM cell at 0.9V is 306mV and 384mV. At sub-threshold operation also it shows improvement. The Leakage power reduced by 0.125x with LP8T, 0.022x with D6T SRAM cell, TG8T and SE8T. Also, impact of process variation on cell stability is discussed

Operação de circuitos lógicos CMOS de (ultra)-baixo consumo: [dissertação]

Dissertação (mestrado) - Universidade Federal de Santa Catarina, Centro Tecnológico. Programa de Pós-Graduação em Engenharia Elétrica.A presente dissertação visa estudar o comportamento e operação de circuitos lógicos CMOS de (ultra)-baixo consumo. Envolve o dimensionamento dos transistores NMOS e PMOS que compõem os circuitos, a determinação da melhor tensão de alimentação e técnicas de polarização do poço, visando o balanceamento dos tempos de subida e descida dos circuitos e evitar desperdício de energia. Para isso, são desenvolvidas formulações analíticas para a função de transferência DC, tempos de transiente e dissipação de potência de portas lógicas estáticas. A análise do descasamento dos transistores e do efeito da dispersão tecnológica são avaliados para que se possa evitá-los ou minimizá-los. Com este intuito, técnicas de polarização do substrato são empregadas e dois circuitos de compensação são propostos. Validação das técnicas empregadas é feita com diversos circuitos e portas lógicas, através de simulações, em circuitos com componentes discretos e na forma de elementos testes em um circuito integrado fabricado especialmente para este propósito, nas tecnologias AMIS 1,5µm e TSMC 0,35µm

Modified Differential Cascode Voltage Switch Logic Optimized for Sub-threshold Voltage Operation

Ultra-low sub-threshold voltage research has become increasingly important with the recent shift in consumer electronics towards low power designs for mobile, wearable, and implantable technologies. These applications are able to trade-off speed for reduced power consumption and reduced minimum operating voltage. This thesis studies circuit design solutions that focus on achieving the lowest minimum operating voltages. These applications are likely to be ones where the supply voltage may come from energy harvesting sources that are only able to source ultra-low voltages. The logic circuit presented in this thesis is a modified implementation of differential cascade voltage switch logic (DCVSL). Differential logic has improved ultra-low voltage performance over static CMOS logic and the modification to DCVSL offers a logic structure that can implement multi-input AND/NAND and OR/NOR gates while maintaining a stack height of one. This logic circuit is referred in this thesis as MOD-DCVSL. The modification requires the use of capacitive boosting to allow for normal logic operation. The results of this thesis show that differential logic styles are able to perform at lower minimum operating voltages compared to static CMOS logic styles but at the cost of larger delay and power compared to static CMOS. On average the differential implementations could operate at a minimum supply voltage 5mV lower than CMOS for two input implementations and 10mV lower for three input implementations. The delay of differential implementations was approximately double for both two and three input implementations. The power of the differential implementations are approximately 20% higher than static CMOS for two input implementations but this gap is narrowed to approximately 10% for three input implementations, here the lower minimum operating voltages allowed for decreased power consumption. Due to the consistently lower delay, static CMOS had a lower power delay product than the differential logic. When comparing only the differential logic, MOD-DCVSL offered negligible difference for two input implementations but was able to improve delay by 7% and power by 11% in the three input implementations