1,114 research outputs found

    An Energy-Efficient Reconfigurable Mobile Memory Interface for Computing Systems

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    The critical need for higher power efficiency and bandwidth transceiver design has significantly increased as mobile devices, such as smart phones, laptops, tablets, and ultra-portable personal digital assistants continue to be constructed using heterogeneous intellectual properties such as central processing units (CPUs), graphics processing units (GPUs), digital signal processors, dynamic random-access memories (DRAMs), sensors, and graphics/image processing units and to have enhanced graphic computing and video processing capabilities. However, the current mobile interface technologies which support CPU to memory communication (e.g. baseband-only signaling) have critical limitations, particularly super-linear energy consumption, limited bandwidth, and non-reconfigurable data access. As a consequence, there is a critical need to improve both energy efficiency and bandwidth for future mobile devices.;The primary goal of this study is to design an energy-efficient reconfigurable mobile memory interface for mobile computing systems in order to dramatically enhance the circuit and system bandwidth and power efficiency. The proposed energy efficient mobile memory interface which utilizes an advanced base-band (BB) signaling and a RF-band signaling is capable of simultaneous bi-directional communication and reconfigurable data access. It also increases power efficiency and bandwidth between mobile CPUs and memory subsystems on a single-ended shared transmission line. Moreover, due to multiple data communication on a single-ended shared transmission line, the number of transmission lines between mobile CPU and memories is considerably reduced, resulting in significant technological innovations, (e.g. more compact devices and low cost packaging to mobile communication interface) and establishing the principles and feasibility of technologies for future mobile system applications. The operation and performance of the proposed transceiver are analyzed and its circuit implementation is discussed in details. A chip prototype of the transceiver was implemented in a 65nm CMOS process technology. In the measurement, the transceiver exhibits higher aggregate data throughput and better energy efficiency compared to prior works

    High-Speed and Low-Energy On-Chip Communication Circuits.

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    Continuous technology scaling sharply reduces transistor delays, while fixed-length global wire delays have increased due to less wiring pitch with higher resistance and coupling capacitance. Due to this ever growing gap, long on-chip interconnects pose well-known latency, bandwidth, and energy challenges to high-performance VLSI systems. Repeaters effectively mitigate wire RC effects but do little to improve their energy costs. Moreover, the increased complexity and high level of integration requires higher wire densities, worsening crosstalk noise and power consumption of conventionally repeated interconnects. Such increasing concerns in global on-chip wires motivate circuits to improve wire performance and energy while reducing the number of repeaters. This work presents circuit techniques and investigation for high-performance and energy-efficient on-chip communication in the aspects of encoding, data compression, self-timed current injection, signal pre-emphasis, low-swing signaling, and technology mapping. The improved bus designs also consider the constraints of robust operation and performance/energy gains across process corners and design space. Measurement results from 5mm links on 65nm and 90nm prototype chips validate 2.5-3X improvement in energy-delay product.Ph.D.Electrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/75800/1/jseo_1.pd

    High-speed low-power modulator driver arrays for medium-reach optical networks

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    The internet is becoming the ubiquitous tool that is changing the lives of so many citizens across the world. Commerce, government, industry, healthcare and social interactions are all increasingly using internet applications to improve and facilitate communications. This is especially true for videoenabled applications, which currently demand much higher data rates and quality from data networks. High definition TV streaming services are emerging and these again will significantly push the demand for widely deployed, high-bandwidth services. The current access passive optical networks (PONs) use a single wavelength for downstream transmission and a separate one for upstream transmission. Incorporating wavelength-division multiplexing (WDM) in a PON allows for much higher bandwidths in both directions. While WDM technologies have been successfully deployed for many years in metro and core networks, in access networks they are not commonly used yet. This is mainly due to the high costs associated with deploying entire WDM access networks. However, the present optical networks cannot be simply and cost-effectively scaled to provide the capacity for tomorrowโ€™s users. As an effect there is a strong need for new WDM access components which are compact, cost-competitive and mass-manufacturable. Increasing the number of wavelengths for WDM-PON automatically leads to an increase in the number of single pluggable transceivers, which brings substantial design challenges and additional costs. The multitude of TXs and RXs for different wavelength channels increases the total footprint considerably. Photonic integration of transceivers into arrays will significantly reduce the footprint and cost. However, the total power consumption of an array device is an issue. To avoid the use of a thermoelectric cooler, the integration density of components is severely limited by the heat dissipating capabilities offered by their package. As a result the WDM-PON philosophy necessitates the reduction of the transceiverโ€™s power dissipation. From this plea it is apparent that the main technology challenges for realizing future-proof optical (access) networks are reducing active component power consumption, shrinking form factors and lowering assembly costs. In this perspective an over 100 Gb/s throughput component, composed of 10 channels at 11.3 Gb/s per wavelength channel would be a great contribution to the expansion of customer bandwidth. It can provide increased line rates to the end users at speeds of 10 Gb/s per wavelength. As RXs typically consume much less power than externally modulated TXs, they can relatively easily be integrated into an array. Mainly high speed optical transmitters have significant power consumptions and the heat generation caused by power dissipation forms a critical obstacle in the development of a 10-channel transmitter, which again underlines the importance of power reduction. Alongside the introduction of WDM in access networks, also inter-office point-to-point connections in data center environments could benefit from the WDM philosophy. As data center operators often suffer from fiber scarcity or do not own their fiber infrastructure, WDM technologies are essential to deliver reach and capacity extension for these scenarios. Interdata center communication also benefits from cost-, footprint- and energyefficient components operating at high speed to maximize the throughput. As an effect integrated over 100 Gb/s transceivers, such as 4 channels at 28 Gb/s, are highly desirable. The research described in this dissertation was partly funded by the European FP7 ICT project C3PO (Colourless and Coolerless Components for low Power Optical Networks) and the UGent special research fund. The C3PO project aimed to develop a new generation of green Si-photonic compatible components with record low power consumption, that can enable bandwidth growth and constrain the total cost. C3PO envisioned building high-capacity access networks employing reflective photonic components. To achieve this, cost-competitive reflective transmitters based on electroabsorption modulators (EAM) needed to be closely integrated into arrays. A multi-wavelength optical source provides the required wavelength channels for both downstream and upstream signals in the WDM-PON. Chapter 1 gives a short overview of a PON and describes the main implementations of a WDM-PON access network. It introduces integrated low power transmitter arrays for a cost-effective architecture of WDM-PONs and inter-data center communication. Chapter 2 compares different optical transmitters and gives a short overview of their most important characteristics. External modulation through both Mach-Zehnder modulators (MZMs) and EAMs is described. It shows that EAMs are the best choice for low power transmitter array integration, thanks to their lower drive voltage and smaller form factor, compared to MZMs. To achieve a reduced consumption, the electronic modulator driver topology is studied in chapter 3. The challenge in designing modulator drivers is the need to deliver very large currents in combination with high voltage swings. Four distinct output configurations are compared and techniques to reduce the power consumption of the drivers are described. Chapter 5 presents duobinary (DB), a modulation scheme that is gaining interest in todayโ€™s optical transmission. As the required bandwidth is about half that of NRZ, it softens the constraints on the transmitter bandwidth. Thanks to its narrow optical spectrum, it has an improved tolerance to dispersion in long haul single mode links and it can improve the spectral efficiency in WDM architectures. For optical DB a precoder is necessary to assure the received signal is equal to the original binary signal. The conducted research that resulted in this dissertation produced 2 low power EAM driver arrays: A 10-channel 113 Gb/s modulator driver array with state-of-the art ultra-low power consumption. A 2-channel 56 Gb/s duobinary driver array with a differential output with low power consumption. Both designs are elaborately analyzed in chapter 4 and 6 respectively. To the best of our knowledge the 10-channel EAM driver array is the first in its kind, while achieving the lowest power consumption for an EAM driver so far reported, 50% below the state of the art in power consumption. The 2-channel EAM driver array is the fastest modulator driver including on-chip duobinary encoding and precoding reported so far. The final chapter provides an overview of the foremost conclusions from the presented research. It is concluded with suggestions for further research

    Research and design of high-speed advanced analogue front-ends for fibre-optic transmission systems

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    In the last decade, we have witnessed the emergence of large, warehouse-scale data centres which have enabled new internet-based software applications such as cloud computing, search engines, social media, e-government etc. Such data centres consist of large collections of servers interconnected using short-reach (reach up to a few hundred meters) optical interconnect. Today, transceivers for these applications achieve up to 100Gb/s by multiplexing 10x 10Gb/s or 4x 25Gb/s channels. In the near future however, data centre operators have expressed a need for optical links which can support 400Gb/s up to 1Tb/s. The crucial challenge is to achieve this in the same footprint (same transceiver module) and with similar power consumption as todayโ€™s technology. Straightforward scaling of the currently used space or wavelength division multiplexing may be difficult to achieve: indeed a 1Tb/s transceiver would require integration of 40 VCSELs (vertical cavity surface emitting laser diode, widely used for shortโ€reach optical interconnect), 40 photodiodes and the electronics operating at 25Gb/s in the same module as todayโ€™s 100Gb/s transceiver. Pushing the bit rate on such links beyond todayโ€™s commercially available 100Gb/s/fibre will require new generations of VCSELs and their driver and receiver electronics. This work looks into a number of stateโ€of-the-art technologies and investigates their performance restraints and recommends different set of designs, specifically targeting multilevel modulation formats. Several methods to extend the bandwidth using deep submicron (65nm and 28nm) CMOS technology are explored in this work, while also maintaining a focus upon reducing power consumption and chip area. The techniques used were pre-emphasis in rising and falling edges of the signal and bandwidth extensions by inductive peaking and different local feedback techniques. These techniques have been applied to a transmitter and receiver developed for advanced modulation formats such as PAM-4 (4 level pulse amplitude modulation). Such modulation format can increase the throughput per individual channel, which helps to overcome the challenges mentioned above to realize 400Gb/s to 1Tb/s transceivers

    Compact 1D-silicon photonic crystal electro-optic modulator operating with ultra-low switching voltage and energy

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    We demonstrate a small foot print (600 nm wide) 1D silicon photonic crystal electro-optic modulator operating with only a 50 mV swing voltage and 0.1 fJ/bit switching energy at GHz speeds, which are the lowest values ever reported for a silicon electro-optic modulator. A 3 dB extinction ratio is demonstrated with an ultra-low 50 mV swing voltage with a total device energy consumption of 42.8 fJ/bit, which is dominated by the state holding energy. The total energy consumption is reduced to 14.65 fJ/bit for a 300 mV swing voltage while still keeping the switching energy at less than 2 fJ/bit. Under optimum voltage conditions, the device operates with a maximum speed of 3 Gbps with 8 dB extinction ratio, which rises to 11 dB for a 1 Gbps modulation speed

    ๋Œ€์—ญํญ ์ฆ๋Œ€ ๊ธฐ์ˆ ์„ ์ด์šฉํ•œ ์ „๋ ฅ ํšจ์œจ์  ๊ณ ์† ์†ก์‹  ์‹œ์Šคํ…œ ์„ค๊ณ„

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    ํ•™์œ„๋…ผ๋ฌธ(๋ฐ•์‚ฌ) -- ์„œ์šธ๋Œ€ํ•™๊ต๋Œ€ํ•™์› : ๊ณต๊ณผ๋Œ€ํ•™ ์ „๊ธฐยท์ •๋ณด๊ณตํ•™๋ถ€, 2022.2. ์ •๋•๊ท .The high-speed interconnect at the datacenter is being more crucial as 400 Gb Ethernet standards are developed. At the high data rate, channel loss re-quires bandwidth extension techniques for transmitters, even for short-reach channels. On the other hand, as the importance of east-to-west connection is rising, the data center architectures are switching to spine-leaf from traditional ones. In this trend, the number of short-reach optical interconnect is expected to be dominant. The vertical-cavity surface-emitting laser (VCSEL) is a com-monly used optical modulator for short-reach interconnect. However, since VCSEL has low bandwidth and nonlinearity, the optical transmitter also needs bandwidth-increasing techniques. Additionally, the power consumption of data centers reaches a point of concern to affect climate change. Therefore, this the-sis focuses on high-speed, power-efficient transmitters for data center applica-tions. Before the presenting circuit design, bandwidth extension techniques such as fractionally-spaced feed-forward equalizer (FFE), on-chip transmission line, inductive peaking, and T-coil are mathematically analyzed for their effec-tiveness. For the first chip, a power and area-efficient pulse-amplitude modulation 4 (PAM-4) transmitter using 3-tap FFE based on a slow-wave transmission line is presented. A passive delay line is adopted for generating an equalizer tap to overcome the high clocking power consumption. The transmission line achieves a high slow-wave factor of 15 with double floating metal shields around the differential coplanar waveguide. The transmitter includes 4:1 multi-plexers (MUXs) and a quadrature clock generator for high-speed data genera-tion in a quarter-rate system. The 4:1 MUX utilizes a 2-UI pulse generator, and the input configuration is determined by qualitative analysis. The chip is fabri-cated in 65 nm CMOS technology and occupies an area of 0.151 mm2. The proposed transmitter system exhibits an energy efficiency of 3.03 pJ/b at the data rate of 48 Gb/s with PAM-4 signaling. The second chip presents a power-efficient PAM-4 VCSEL transmitter using 3-tap FFE and negative-k T-coil. The phase interpolators (PIs) generate frac-tionally-spaced FFE tap and correct quadrature phase error. The PAM-4 com-bining 8:1 MUX is proposed rather than combining at output driver with double 4:1 MUXs to reduce serializing power consumption. T-coils at the internal and output node increase the bandwidth and remove inter-symbol interference (ISI). The negative-k T-coil at the output network increases the bandwidth 1.61 times than without T-coil. The VCSEL driver is placed on the high VSS domain for anode driving and power reduction. The chip is fabricated in 40 nm CMOS technology. The proposed VCSEL transmitter operates up to 48 Gb/s NRZ and 64 Gb/s PAM-4 with the power efficiency of 3.03 pJ/b and 2.09 pJ/b, respec-tively.400Gb ์ด๋”๋„ท ํ‘œ์ค€์ด ๊ฐœ๋ฐœ๋จ์— ๋”ฐ๋ผ ๋ฐ์ดํ„ฐ ์„ผํ„ฐ์˜ ๊ณ ์† ์ƒํ˜ธ ์—ฐ๊ฒฐ์ด ๋”์šฑ ์ค‘์š”ํ•ด์ง€๊ณ  ์žˆ๋‹ค. ๋†’์€ ๋ฐ์ดํ„ฐ ์†๋„์—์„œ์˜ ์ฑ„๋„ ์†์‹ค์— ์˜ํ•ด ๋‹จ๊ฑฐ๋ฆฌ ์ฑ„๋„์˜ ๊ฒฝ์šฐ์—๋„ ์†ก์‹ ๊ธฐ์— ๋Œ€ํ•œ ๋Œ€์—ญํญ ํ™•์žฅ ๊ธฐ์ˆ ์ด ํ•„์š”ํ•˜๋‹ค. ํ•œํŽธ, ๋ฐ์ดํ„ฐ ์„ผํ„ฐ ๋‚ด ๋™-์„œ ์—ฐ๊ฒฐ์˜ ์ค‘์š”์„ฑ์ด ๋†’์•„์ง€๋ฉด์„œ ๋ฐ์ดํ„ฐ ์„ผํ„ฐ ์•„ํ‚คํ…์ฒ˜๊ฐ€ ๊ธฐ์กด์˜ ์•„ํ‚คํ…์ฒ˜์—์„œ ์ŠคํŒŒ์ธ-๋ฆฌํ”„๋กœ ์ „ํ™˜๋˜๊ณ  ์žˆ๋‹ค. ์ด๋Ÿฌํ•œ ์ถ”์„ธ์—์„œ ๋‹จ๊ฑฐ๋ฆฌ ๊ด‘ํ•™ ์ธํ„ฐ์ปค๋„ฅํŠธ์˜ ์ˆ˜๊ฐ€ ์ ์ฐจ ์šฐ์„ธํ•ด์งˆ ๊ฒƒ์œผ๋กœ ์˜ˆ์ƒ๋œ๋‹ค. ์ˆ˜์ง ์บ๋น„ํ‹ฐ ํ‘œ๋ฉด ๋ฐฉ์ถœ ๋ ˆ์ด์ €(VCSEL)๋Š” ์ผ๋ฐ˜์ ์œผ๋กœ ๋‹จ๊ฑฐ๋ฆฌ ์ƒํ˜ธ ์—ฐ๊ฒฐ์„ ์œ„ํ•ด ์‚ฌ์šฉ๋˜๋Š” ๊ด‘ํ•™ ๋ชจ๋“ˆ๋ ˆ์ดํ„ฐ์ด๋‹ค. VCSEL์€ ๋‚ฎ์€ ๋Œ€์—ญํญ๊ณผ ๋น„์„ ํ˜•์„ฑ์„ ๊ฐ€์ง€๊ณ  ์žˆ๊ธฐ ๋•Œ๋ฌธ์—, ๊ด‘ ์†ก์‹ ๊ธฐ๋„ ๋Œ€์—ญํญ ์ฆ๊ฐ€ ๊ธฐ์ˆ ์„ ํ•„์š”๋กœ ํ•œ๋‹ค. ๋˜ํ•œ, ๋ฐ์ดํ„ฐ ์„ผํ„ฐ์˜ ์ „๋ ฅ ์†Œ๋น„๋Š” ๊ธฐํ›„ ๋ณ€ํ™”์— ์˜ํ–ฅ์„ ๋ฏธ์น  ์ˆ˜ ์žˆ๋Š” ์šฐ๋ ค ์ง€์ ์— ๋„๋‹ฌํ–ˆ๋‹ค. ๋”ฐ๋ผ์„œ, ๋ณธ ๋…ผ๋ฌธ์€ ๋ฐ์ดํ„ฐ ์„ผํ„ฐ ์‘์šฉ์„ ์œ„ํ•œ ๊ณ ์† ์ „๋ ฅ ํšจ์œจ์ ์ธ ์†ก์‹ ๊ธฐ์— ์ดˆ์ ์„ ๋งž์ถ”๊ณ  ์žˆ๋‹ค. ํšŒ๋กœ ์„ค๊ณ„๋ฅผ ์ œ์‹œํ•˜๊ธฐ ์ „์—, ๋ถ€๋ถ„ ๊ฐ„๊ฒฉ ํ”ผ๋“œ-ํฌ์›Œ๋“œ ์ดํ€„๋ผ์ด์ € (FFE), ์˜จ์นฉ ์ „์†ก์„ ๋กœ, ์ธ๋•ํ„ฐ, T-์ฝ”์ผ๊ณผ ๊ฐ™์€ ๋Œ€์—ญํญ ํ™•์žฅ ๊ธฐ์ˆ ์„ ์ˆ˜ํ•™์ ์œผ๋กœ ๋ถ„์„ํ•œ๋‹ค. ์ฒซ ๋ฒˆ์งธ ์นฉ์€ ์ €์†ํŒŒ ์ „์†ก์„ ๋กœ๋ฅผ ๊ธฐ๋ฐ˜์œผ๋กœ ํ•œ 3-ํƒญ FFE๋ฅผ ์‚ฌ์šฉํ•˜๋Š” ์ „๋ ฅ ๋ฐ ๋ฉด์  ํšจ์œจ์ ์ธ ํŽ„์Šค-์ง„ํญ-๋ณ€์กฐ 4(PAM-4) ์†ก์‹ ๊ธฐ๋ฅผ ์ œ์‹œํ•œ๋‹ค. ๋†’์€ ํด๋Ÿญ ์ „๋ ฅ ์†Œ๋น„๋ฅผ ๊ทน๋ณตํ•˜๊ธฐ ์œ„ํ•ด ์ดํ€„๋ผ์ด์ € ํƒญ ์ƒ์„ฑ์„ ์œ„ํ•ด ์ˆ˜๋™์†Œ์ž ์ง€์—ฐ ๋ผ์ธ์„ ์ฑ„ํƒํ–ˆ๋‹ค. ์ „์†ก ๋ผ์ธ์€ ์ฐจ๋™ ๋™์ผํ‰๋ฉด๋„ํŒŒ๊ด€ ์ฃผ์œ„์— ์ด์ค‘ ํ”Œ๋กœํŒ… ๊ธˆ์† ์ฐจํ๋ฅผ ์‚ฌ์šฉํ•˜์—ฌ 15์˜ ๋†’์€ ์ „๋‹ฌ์†๋„ ๊ฐ์‡ ๋ฅผ ๋‹ฌ์„ฑํ•œ๋‹ค. ์†ก์‹ ๊ธฐ์—๋Š” 4:1 ๋ฉ€ํ‹ฐํ”Œ๋ ‰์„œ(MUX)์™€ 4-์œ„์ƒ ํด๋Ÿญ ์ƒ์„ฑ๊ธฐ๊ฐ€ ํฌํ•จ๋˜์–ด ์žˆ๋‹ค. 4:1 MUX๋Š” 2-UI ํŽ„์Šค ๋ฐœ์ƒ๊ธฐ๋ฅผ ์‚ฌ์šฉํ•˜๋ฉฐ, ์ •์„ฑ ๋ถ„์„์— ์˜ํ•ด ์ž…๋ ฅ ๊ตฌ์„ฑ์ด ๊ฒฐ์ •๋œ๋‹ค. ์ด ์นฉ์€ 65 nm CMOS ๊ธฐ์ˆ ๋กœ ์ œ์ž‘๋˜์—ˆ์œผ๋ฉฐ 0.151 mm2์˜ ๋ฉด์ ์„ ์ฐจ์ง€ํ•œ๋‹ค. ์ œ์•ˆ๋œ ์†ก์‹ ๊ธฐ ์‹œ์Šคํ…œ์€ PAM-4 ์‹ ํ˜ธ์™€ ํ•จ๊ป˜ 48 Gb/s์˜ ๋ฐ์ดํ„ฐ ์†๋„์—์„œ 3.03 pJ/b์˜ ์—๋„ˆ์ง€ ํšจ์œจ์„ ๋ณด์—ฌ์ค€๋‹ค. ๋‘ ๋ฒˆ์งธ ์นฉ์—์„œ๋Š” 3-ํƒญ FFE ๋ฐ ์—ญํšŒ์ „ T-์ฝ”์ผ์„ ์‚ฌ์šฉํ•˜๋Š” ์ „๋ ฅ ํšจ์œจ์ ์ธ PAM-4 VCSEL ์†ก์‹ ๊ธฐ๋ฅผ ์ œ์‹œํ•œ๋‹ค. ์œ„์ƒ ๋ณด๊ฐ„๊ธฐ(PI)๋Š” ๋ถ€๋ถ„ ๊ฐ„๊ฒฉ FFE ํƒญ์„ ์ƒ์„ฑํ•˜๊ณ  4-์œ„์ƒ ํด๋Ÿญ ์˜ค๋ฅ˜๋ฅผ ์ˆ˜์ •ํ•˜๋Š” ๋ฐ ์‚ฌ์šฉ๋œ๋‹ค. ์ง๋ ฌํ™” ์ „๋ ฅ ์†Œ๋น„๋ฅผ ์ค„์ด๊ธฐ ์œ„ํ•ด ์ถœ๋ ฅ ๋“œ๋ผ์ด๋ฒ„์—์„œ MSB์™€ LSB๋ฅผ ๋‘ ๊ฐœ์˜ 4:1 MUX๋ฅผ ํ†ตํ•ด ๊ฒฐํ•ฉํ•˜๋Š” ๋Œ€์‹  8:1 MUX๋ฅผ ํ†ตํ•ด PAM-4๋กœ ๊ฒฐํ•ฉํ•˜๋Š” ํšŒ๋กœ๊ฐ€ ์ œ์•ˆ๋œ๋‹ค. ๋‚ด๋ถ€ ๋ฐ ์ถœ๋ ฅ ๋…ธ๋“œ์—์„œ T-์ฝ”์ผ์€ ๋Œ€์—ญํญ์„ ์ฆ๊ฐ€์‹œํ‚ค๊ณ  ๊ธฐํ˜ธ ๊ฐ„ ๊ฐ„์„ญ(ISI)์„ ์ œ๊ฑฐํ•œ๋‹ค. ์ถœ๋ ฅ ๋„คํŠธ์›Œํฌ์—์„œ ์—ญํšŒ์ „ T-์ฝ”์ผ์€ T-์ฝ”์ผ์ด ์—†๋Š” ๊ฒฝ์šฐ๋ณด๋‹ค ๋Œ€์—ญํญ์„ 1.61๋ฐฐ ์ฆ๊ฐ€์‹œํ‚จ๋‹ค. VCSEL ๋“œ๋ผ์ด๋ฒ„๋Š” ์–‘๊ทน ๊ตฌ๋™ ๋ฐ ์ „๋ ฅ ๊ฐ์†Œ๋ฅผ ์œ„ํ•ด ๋†’์€ VSS ๋„๋ฉ”์ธ์— ๋ฐฐ์น˜๋œ๋‹ค. ์ด ์นฉ์€ 40 nm CMOS ๊ธฐ์ˆ ๋กœ ์ œ์ž‘๋˜์—ˆ๋‹ค. ์ œ์•ˆ๋œ VCSEL ์†ก์‹ ๊ธฐ๋Š” ๊ฐ๊ฐ 3.03pJ/b์™€ 2.09pJ/b์˜ ์ „๋ ฅ ํšจ์œจ๋กœ ์ตœ๋Œ€ 48Gb/s NRZ์™€ 64Gb/s PAM-4๊นŒ์ง€ ์ž‘๋™ํ•œ๋‹ค.ABSTRACT I CONTENTS III LIST OF FIGURES V LIST OF TABLES IX CHAPTER 1 INTRODUCTION 1 1.1 MOTIVATION 1 1.2 THESIS ORGANIZATION 5 CHAPTER 2 BACKGROUND OF HIGH-SPEED INTERFACE 6 2.1 OVERVIEW 6 2.2 BASIS OF DATA CENTER ARCHITECTURE 9 2.3 SHORT-REACH INTERFACE STANDARDS 12 2.4 ANALYSES OF BANDWIDTH EXTENSION TECHNIQUES 16 2.4.1 FRACTIONALLY-SPACED FFE 16 2.4.2 TRANSMISSION LINE 21 2.4.3 INDUCTOR 24 2.4.4 T-COIL 33 CHAPTER 3 DESIGN OF 48 GB/S PAM-4 ELECTRICAL TRANSMITTER IN 65 NM CMOS 43 3.1 OVERVIEW 43 3.2 FFE BASED ON DOUBLE-SHIELDED COPLANAR WAVEGUIDE 46 3.2.1 BASIC CONCEPT 46 3.2.2 PROPOSED DOUBLE-SHIELDED COPLANAR WAVEGUIDE 47 3.3 DESIGN CONSIDERATION ON 4:1 MUX 50 3.4 PROPOSED PAM-4 ELECTRICAL TRANSMITTER 53 3.5 MEASUREMENT 57 CHAPTER 4 DESIGN OF 64 GB/S PAM-4 OPTICAL TRANSMITTER IN 40 NM CMOS 64 4.1 OVERVIEW 64 4.2 DESIGN CONSIDERATION OF OPTICAL TRANSMITTER 66 4.3 PROPOSED PAM-4 VCSEL TRANSMITTER 69 4.4 MEASUREMENT 82 CHAPTER 5 CONCLUSIONS 88 BIBLIOGRAPHY 90 ์ดˆ ๋ก 101๋ฐ•

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    A new fully-digital CMOS pulse generator for impulse-radio Ultra-Wide-Band (UWB) systems is presented. First, the shape of the pulse which best fits the FCC regulation in the 3.1-5 GHz sub-band of the entire 3.1-10.6 GHz UWB bandwidth is derived and approximated using rectangular digital pulses. In particular, the number and width of pulses that approximate an ideal template is found through an ad-hoc optimization methodology. Then a fully differential digital CMOS circuit that synthesizes the pulse sequence is conceived and its functionality demonstrated through post-layout simulations. The results show a very good agreement with the FCC requirements and a low power consumptio

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    Limitations of bus-based interconnections related to scalability, latency, bandwidth, and power consumption for supporting the related huge number of on-chip resources result in a communication bottleneck. These challenges can be efficiently addressed with the implementation of a network-on-chip (NoC) system. This book gives a detailed analysis of various on-chip communication architectures and covers different areas of NoCs such as potentials, architecture, technical challenges, optimization, design explorations, and research directions. In addition, it discusses current and future trends that could make an impactful and meaningful contribution to the research and design of on-chip communications and NoC systems
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