Process Variation Aware DRAM (Dynamic Random Access Memory) Design Using Block-Based Adaptive Body Biasing Algorithm

Large dense structures like DRAMs (Dynamic Random Access Memory) are particularly susceptible to process variation, which can lead to variable latencies in different memory arrays. However, very little work exists on variation studies in DRAMs. This is due to the fact that DRAMs were traditionally placed off-chip and their latency changes due to process variation did not impact the overall processor performance. However, emerging technology trends like three-dimensional integration, use of sophisticated memory controllers, and continued scaling of technology node, substantially reduce DRAM access latency. Hence, future technology nodes will see widespread adoption of embedded DRAMs. This makes process variation a critical upcoming challenge in DRAMs that must be addressed in current and forthcoming technology generations. In this paper, techniques for modeling the effect of random, as well as spatial variation, in large DRAM array structures are presented. Sensitivity-based gate level process variation models combined with statistical timing analysis are used to estimate the impact of process variation on the DRAM performance and leakage power. A simulated annealing-based Vth assignment algorithm using adaptive body biasing is proposed in this thesis to improve the yield of DRAM structures. By applying the algorithm on a 1GB DRAM array, an average of 14.66% improvement in the DRAM yield is obtained

Reliability in the face of variability in nanometer embedded memories

In this thesis, we have investigated the impact of parametric variations on the behaviour of one performance-critical processor structure - embedded memories. As variations manifest as a spread in power and performance, as a first step, we propose a novel modeling methodology that helps evaluate the impact of circuit-level optimizations on architecture-level design choices. Choices made at the design-stage ensure conflicting requirements from higher-levels are decoupled. We then complement such design-time optimizations with a runtime mechanism that takes advantage of adaptive body-biasing to lower power whilst improving performance in the presence of variability. Our proposal uses a novel fully-digital variation tracking hardware using embedded DRAM (eDRAM) cells to monitor run-time changes in cache latency and leakage. A special fine-grain body-bias generator uses the measurements to generate an optimal body-bias that is needed to meet the required yield targets. A novel variation-tolerant and soft-error hardened eDRAM cell is also proposed as an alternate candidate for replacing existing SRAM-based designs in latency critical memory structures. In the ultra low-power domain where reliable operation is limited by the minimum voltage of operation (Vddmin), we analyse the impact of failures on cache functional margin and functional yield. Towards this end, we have developed a fully automated tool (INFORMER) capable of estimating memory-wide metrics such as power, performance and yield accurately and rapidly. Using the developed tool, we then evaluate the #effectiveness of a new class of hybrid techniques in improving cache yield through failure prevention and correction. Having a holistic perspective of memory-wide metrics helps us arrive at design-choices optimized simultaneously for multiple metrics needed for maintaining lifetime requirements

Cache memory design in the FinFET era

The major problem in the future technology scaling is the variations in process parameters that are interpreted as imperfections in the development process. Moreover, devices are more sensitive to the environmental changes of temperature and supply volt- age as well as to ageing. All these influences are manifested in the integrated circuits as increased power consumption, reduced maximal operating frequency and increased number of failures. These effects have been partially overcome with the introduction of the FinFET technology which have solved the problem of variability caused by Random Dopant Fluctuations. However, in the next ten years channel length is projected to shrink to 10nm where the variability source generated by Line Edge Roughness will dominate, and its effects on the threshold voltage variations will become critical. The embedded memories with their cells as the basic building unit are the most prone to these effects due to their the smallest dimensions. Because of that, memories should be designed with particular care in order to make possible further technology scaling. This thesis explores upcoming 10nm FinFETs and the existing issues in the cache memory design with this technology. More- over, it tries to present some original and novel techniques on the different level of design abstraction for mitigating the effects of process and environmental variability. At first original method for simulating variability of Tri-Gate Fin- FETs is presented using conventional HSPICE simulation environment and BSIM-CMG model cards. When that is accomplished, thorough characterisation of traditional SRAM cell circuits (6T and 8T) is performed. Possibility of using Independent Gate FinFETs for increasing cell stability has been explored, also. Gain Cells appeared in the recent past as an attractive alternative for in the cache memory design. This thesis partially explores this idea by presenting and performing detailed circuit analysis of the dynamic 3T gain cell for 10nm FinFETs. At the top of this work, thesis shows one micro-architecture optimisation of high-speed cache when it is implemented by 3T gain cells. We show how the cache coherency states can be used in order to reduce refresh energy of the memory as well as reduce memory ageing.El principal problema de l'escalat la tecnologia són les variacions en els paràmetres de disseny (imperfeccions) durant procés de fabricació. D'altra banda, els dispositius també són més sensibles als canvis ambientals de temperatura, la tensió d'alimentació, així com l'envelliment. Totes aquestes influències es manifesten en els circuits integrats com l'augment de consum d'energia, la reducció de la freqüència d'operació màxima i l'augment del nombre de xips descartats. Aquests efectes s'han superat parcialment amb la introducció de la tecnologia FinFET que ha resolt el problema de la variabilitat causada per les fluctuacions de dopants aleatòries. No obstant això, en els propers deu anys, l'ample del canal es preveu que es reduirà a 10nm, on la font de la variabilitat generada per les rugositats de les línies de material dominarà, i els seu efecte en les variacions de voltatge llindar augmentarà. Les memòries encastades amb les seves cel·les com la unitat bàsica de construcció són les més propenses a sofrir aquests efectes a causa de les seves dimensions més petites. A causa d'això, cal dissenyar les memòries amb una especial cura per tal de fer possible l'escalat de la tecnologia. Aquesta tesi explora la tecnologia de FinFETs de 10nm i els problemes existents en el disseny de memòries amb aquesta tecnologia. A més a més, presentem noves tècniques originals sobre diferents nivells d'abstracció del disseny per a la mitigació dels efectes les variacions tan de procés com ambientals. En primer lloc, presentem un mètode original per a la simulació de la variabilitat de Tri-Gate FinFETs usant entorn de simulació HSPICE convencional i models de tecnologia BSIMCMG. Després, es realitza la caracterització completa dels circuits de cel·les SRAM tradicionals (6T i 8T) conjuntament amb l'ús de Gate-independent FinFETs per augmentar l'estabilitat de la cèl·lula

A Construction Kit for Efficient Low Power Neural Network Accelerator Designs

Implementing embedded neural network processing at the edge requires efficient hardware acceleration that couples high computational performance with low power consumption. Driven by the rapid evolution of network architectures and their algorithmic features, accelerator designs are constantly updated and improved. To evaluate and compare hardware design choices, designers can refer to a myriad of accelerator implementations in the literature. Surveys provide an overview of these works but are often limited to system-level and benchmark-specific performance metrics, making it difficult to quantitatively compare the individual effect of each utilized optimization technique. This complicates the evaluation of optimizations for new accelerator designs, slowing-down the research progress. This work provides a survey of neural network accelerator optimization approaches that have been used in recent works and reports their individual effects on edge processing performance. It presents the list of optimizations and their quantitative effects as a construction kit, allowing to assess the design choices for each building block separately. Reported optimizations range from up to 10'000x memory savings to 33x energy reductions, providing chip designers an overview of design choices for implementing efficient low power neural network accelerators

Design Techniques for Energy-Quality Scalable Digital Systems

Energy efficiency is one of the key design goals in modern computing. Increasingly complex tasks are being executed in mobile devices and Internet of Things end-nodes, which are expected to operate for long time intervals, in the orders of months or years, with the limited energy budgets provided by small form-factor batteries. Fortunately, many of such tasks are error resilient, meaning that they can toler- ate some relaxation in the accuracy, precision or reliability of internal operations, without a significant impact on the overall output quality. The error resilience of an application may derive from a number of factors. The processing of analog sensor inputs measuring quantities from the physical world may not always require maximum precision, as the amount of information that can be extracted is limited by the presence of external noise. Outputs destined for human consumption may also contain small or occasional errors, thanks to the limited capabilities of our vision and hearing systems. Finally, some computational patterns commonly found in domains such as statistics, machine learning and operational research, naturally tend to reduce or eliminate errors. Energy-Quality (EQ) scalable digital systems systematically trade off the quality of computations with energy efficiency, by relaxing the precision, the accuracy, or the reliability of internal software and hardware components in exchange for energy reductions. This design paradigm is believed to offer one of the most promising solutions to the impelling need for low-energy computing. Despite these high expectations, the current state-of-the-art in EQ scalable design suffers from important shortcomings. First, the great majority of techniques proposed in literature focus only on processing hardware and software components. Nonetheless, for many real devices, processing contributes only to a small portion of the total energy consumption, which is dominated by other components (e.g. I/O, memory or data transfers). Second, in order to fulfill its promises and become diffused in commercial devices, EQ scalable design needs to achieve industrial level maturity. This involves moving from purely academic research based on high-level models and theoretical assumptions to engineered flows compatible with existing industry standards. Third, the time-varying nature of error tolerance, both among different applications and within a single task, should become more central in the proposed design methods. This involves designing “dynamic” systems in which the precision or reliability of operations (and consequently their energy consumption) can be dynamically tuned at runtime, rather than “static” solutions, in which the output quality is fixed at design-time. This thesis introduces several new EQ scalable design techniques for digital systems that take the previous observations into account. Besides processing, the proposed methods apply the principles of EQ scalable design also to interconnects and peripherals, which are often relevant contributors to the total energy in sensor nodes and mobile systems respectively. Regardless of the target component, the presented techniques pay special attention to the accurate evaluation of benefits and overheads deriving from EQ scalability, using industrial-level models, and on the integration with existing standard tools and protocols. Moreover, all the works presented in this thesis allow the dynamic reconfiguration of output quality and energy consumption. More specifically, the contribution of this thesis is divided in three parts. In a first body of work, the design of EQ scalable modules for processing hardware data paths is considered. Three design flows are presented, targeting different technologies and exploiting different ways to achieve EQ scalability, i.e. timing-induced errors and precision reduction. These works are inspired by previous approaches from the literature, namely Reduced-Precision Redundancy and Dynamic Accuracy Scaling, which are re-thought to make them compatible with standard Electronic Design Automation (EDA) tools and flows, providing solutions to overcome their main limitations. The second part of the thesis investigates the application of EQ scalable design to serial interconnects, which are the de facto standard for data exchanges between processing hardware and sensors. In this context, two novel bus encodings are proposed, called Approximate Differential Encoding and Serial-T0, that exploit the statistical characteristics of data produced by sensors to reduce the energy consumption on the bus at the cost of controlled data approximations. The two techniques achieve different results for data of different origins, but share the common features of allowing runtime reconfiguration of the allowed error and being compatible with standard serial bus protocols. Finally, the last part of the manuscript is devoted to the application of EQ scalable design principles to displays, which are often among the most energy- hungry components in mobile systems. The two proposals in this context leverage the emissive nature of Organic Light-Emitting Diode (OLED) displays to save energy by altering the displayed image, thus inducing an output quality reduction that depends on the amount of such alteration. The first technique implements an image-adaptive form of brightness scaling, whose outputs are optimized in terms of balance between power consumption and similarity with the input. The second approach achieves concurrent power reduction and image enhancement, by means of an adaptive polynomial transformation. Both solutions focus on minimizing the overheads associated with a real-time implementation of the transformations in software or hardware, so that these do not offset the savings in the display. For each of these three topics, results show that the aforementioned goal of building EQ scalable systems compatible with existing best practices and mature for being integrated in commercial devices can be effectively achieved. Moreover, they also show that very simple and similar principles can be applied to design EQ scalable versions of different system components (processing, peripherals and I/O), and to equip these components with knobs for the runtime reconfiguration of the energy versus quality tradeoff

Idleness-aware dynamic power mode selection on the i.Mx 7ULP iot edge processor

Power management is a crucial concern in micro-controller platforms for the Internet of Things (IoT) edge. Many applications present a variable and difficult to predict workload profile, usually driven by external inputs. The dynamic tuning of power consumption to the application requirements is indeed a viable approach to save energy. In this paper, we propose the implementation of a power management strategy for a novel low-cost low-power heterogeneous dual-core SoC for IoT edge fabricated in 28 nm FD-SOI technology. Ss with more complex power management policies implemented on high-end application processors, we propose a power management strategy where the power mode is dynamically selected to ensure user-specified target idleness. We demonstrate that the dynamic power mode selection introduced by our power manager allows achieving more than 43% power consumption reduction with respect to static worst-case power mode selection, without any significant penalty in the performance of a running application

Embracing Low-Power Systems with Improvement in Security and Energy-Efficiency

As the economies around the world are aligning more towards usage of computing systems, the global energy demand for computing is increasing rapidly. Additionally, the boom in AI based applications and services has already invited the pervasion of specialized computing hardware architectures for AI (accelerators). A big chunk of research in the industry and academia is being focused on providing energy efficiency to all kinds of power hungry computing architectures. This dissertation adds to these efforts. Aggressive voltage underscaling of chips is one the effective low power paradigms of providing energy efficiency. This dissertation identifies and deals with the reliability and performance problems associated with this paradigm and innovates novel energy efficient approaches. Specifically, the properties of a low power security primitive have been improved and, higher performance has been unlocked in an AI accelerator (Google TPU) in an aggressively voltage underscaled environment. And, novel power saving opportunities have been unlocked by characterizing the usage pattern of a baseline TPU with rigorous mathematical analysis

Towards Energy-Efficient and Reliable Computing: From Highly-Scaled CMOS Devices to Resistive Memories

The continuous increase in transistor density based on Moore\u27s Law has led us to highly scaled Complementary Metal-Oxide Semiconductor (CMOS) technologies. These transistor-based process technologies offer improved density as well as a reduction in nominal supply voltage. An analysis regarding different aspects of 45nm and 15nm technologies, such as power consumption and cell area to compare these two technologies is proposed on an IEEE 754 Single Precision Floating-Point Unit implementation. Based on the results, using the 15nm technology offers 4-times less energy and 3-fold smaller footprint. New challenges also arise, such as relative proportion of leakage power in standby mode that can be addressed by post-CMOS technologies. Spin-Transfer Torque Random Access Memory (STT-MRAM) has been explored as a post-CMOS technology for embedded and data storage applications seeking non-volatility, near-zero standby energy, and high density. Towards attaining these objectives for practical implementations, various techniques to mitigate the specific reliability challenges associated with STT-MRAM elements are surveyed, classified, and assessed herein. Cost and suitability metrics assessed include the area of nanomagmetic and CMOS components per bit, access time and complexity, Sense Margin (SM), and energy or power consumption costs versus resiliency benefits. In an attempt to further improve the Process Variation (PV) immunity of the Sense Amplifiers (SAs), a new SA has been introduced called Adaptive Sense Amplifier (ASA). ASA can benefit from low Bit Error Rate (BER) and low Energy Delay Product (EDP) by combining the properties of two of the commonly used SAs, Pre-Charge Sense Amplifier (PCSA) and Separated Pre-Charge Sense Amplifier (SPCSA). ASA can operate in either PCSA or SPCSA mode based on the requirements of the circuit such as energy efficiency or reliability. Then, ASA is utilized to propose a novel approach to actually leverage the PV in Non-Volatile Memory (NVM) arrays using Self-Organized Sub-bank (SOS) design. SOS engages the preferred SA alternative based on the intrinsic as-built behavior of the resistive sensing timing margin to reduce the latency and power consumption while maintaining acceptable access time

Dependable Embedded Systems

This Open Access book introduces readers to many new techniques for enhancing and optimizing reliability in embedded systems, which have emerged particularly within the last five years. This book introduces the most prominent reliability concerns from today’s points of view and roughly recapitulates the progress in the community so far. Unlike other books that focus on a single abstraction level such circuit level or system level alone, the focus of this book is to deal with the different reliability challenges across different levels starting from the physical level all the way to the system level (cross-layer approaches). The book aims at demonstrating how new hardware/software co-design solution can be proposed to ef-fectively mitigate reliability degradation such as transistor aging, processor variation, temperature effects, soft errors, etc. Provides readers with latest insights into novel, cross-layer methods and models with respect to dependability of embedded systems; Describes cross-layer approaches that can leverage reliability through techniques that are pro-actively designed with respect to techniques at other layers; Explains run-time adaptation and concepts/means of self-organization, in order to achieve error resiliency in complex, future many core systems