20 research outputs found

    System-level Prototyping with HyperTransport

    Get PDF
    The complexity of computer systems continues to increase. Emulation of proposed subsystems is one way to manage this growing complexity when evaluating the performance of proposed architectures. HyperTransport allows researchers to connect directly to microprocessors with FPGAs. This enables the emulation of novel memory hierarchies, non-volatile memory designs, coprocessors, and other architectural changes, combined with an existing system

    Proceedings of the Second International Workshop on HyperTransport Research and Applications (WHTRA2011)

    Get PDF
    Proceedings of the Second International Workshop on HyperTransport Research and Applications (WHTRA2011) which was held Feb. 9th 2011 in Mannheim, Germany. The Second International Workshop for Research on HyperTransport is an international high quality forum for scientists, researches and developers working in the area of HyperTransport. This includes not only developments and research in HyperTransport itself, but also work which is based on or enabled by HyperTransport. HyperTransport (HT) is an interconnection technology which is typically used as system interconnect in modern computer systems, connecting the CPUs among each other and with the I/O bridges. Primarily designed as interconnect between high performance CPUs it provides an extremely low latency, high bandwidth and excellent scalability. The definition of the HTX connector allows the use of HT even for add-in cards. In opposition to other peripheral interconnect technologies like PCI-Express no protocol conversion or intermediate bridging is necessary. HT is a direct connection between device and CPU with minimal latency. Another advantage is the possibility of cache coherent devices. Because of these properties HT is of high interest for high performance I/O like networking and storage, but also for co-processing and acceleration based on ASIC or FPGA technologies. In particular acceleration sees a resurgence of interest today. One reason is the possibility to reduce power consumption by the use of accelerators. In the area of parallel computing the low latency communication allows for fine grain communication schemes and is perfectly suited for scalable systems. Summing up, HT technology offers key advantages and great performance to any research aspect related to or based on interconnects. For more information please consult the workshop website (http://whtra.uni-hd.de)

    Towards Successful Application of Phase Change Memories: Addressing Challenges from Write Operations

    Get PDF
    The emerging Phase Change Memory (PCM) technology is drawing increasing attention due to its advantages in non-volatility, byte-addressability and scalability. It is regarded as a promising candidate for future main memory. However, PCM's write operation has some limitations that pose challenges to its application in memory. The disadvantages include long write latency, high write power and limited write endurance. In this thesis, I present my effort towards successful application of PCM memory. My research consists of several optimizing techniques at both the circuit and architecture level. First, at the circuit level, I propose Differential Write to remove unnecessary bit changes in PCM writes. This is not only beneficial to endurance but also to the energy and latency of writes. Second, I propose two memory scheduling enhancements (AWP and RAWP) for a non-blocking bank design. My memory scheduling enhancements can exploit intra-bank parallelism provided by non-blocking bank design, and achieve significant throughput improvement. Third, I propose Bit Level Power Budgeting (BPB), a fine-grained power budgeting technique that leverages the information from Differential Write to achieve even higher memory throughput under the same power budget. Fourth, I propose techniques to improve the QoS tuning ability of high-priority applications when running on PCM memory. In summary, the techniques I propose effectively address the challenges of PCM's write operations. In addition, I present the experimental infrastructure in this work and my visions of potential future research topics, which could be helpful to other researchers in the area

    Gestión de jerarquías de memoria híbridas a nivel de sistema

    Get PDF
    Tesis inédita de la Universidad Complutense de Madrid, Facultad de Informática, Departamento de Arquitectura de Computadoras y Automática y de Ku Leuven, Arenberg Doctoral School, Faculty of Engineering Science, leída el 11/05/2017.In electronics and computer science, the term ‘memory’ generally refers to devices that are used to store information that we use in various appliances ranging from our PCs to all hand-held devices, smart appliances etc. Primary/main memory is used for storage systems that function at a high speed (i.e. RAM). The primary memory is often associated with addressable semiconductor memory, i.e. integrated circuits consisting of silicon-based transistors, used for example as primary memory but also other purposes in computers and other digital electronic devices. The secondary/auxiliary memory, in comparison provides program and data storage that is slower to access but offers larger capacity. Examples include external hard drives, portable flash drives, CDs, and DVDs. These devices and media must be either plugged in or inserted into a computer in order to be accessed by the system. Since secondary storage technology is not always connected to the computer, it is commonly used for backing up data. The term storage is often used to describe secondary memory. Secondary memory stores a large amount of data at lesser cost per byte than primary memory; this makes secondary storage about two orders of magnitude less expensive than primary storage. There are two main types of semiconductor memory: volatile and nonvolatile. Examples of non-volatile memory are ‘Flash’ memory (sometimes used as secondary, sometimes primary computer memory) and ROM/PROM/EPROM/EEPROM memory (used for firmware such as boot programs). Examples of volatile memory are primary memory (typically dynamic RAM, DRAM), and fast CPU cache memory (typically static RAM, SRAM, which is fast but energy-consuming and offer lower memory capacity per are a unit than DRAM). Non-volatile memory technologies in Si-based electronics date back to the 1990s. Flash memory is widely used in consumer electronic products such as cellphones and music players and NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. The rapid increase of leakage currents in Silicon CMOS transistors with scaling poses a big challenge for the integration of SRAM memories. There is also the case of susceptibility to read/write failure with low power schemes. As a result of this, over the past decade, there has been an extensive pooling of time, resources and effort towards developing emerging memory technologies like Resistive RAM (ReRAM/RRAM), STT-MRAM, Domain Wall Memory and Phase Change Memory(PRAM). Emerging non-volatile memory technologies promise new memories to store more data at less cost than the expensive-to build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. These new memory technologies combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the non-volatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. The research and information on these Non-Volatile Memory (NVM) technologies has matured over the last decade. These NVMs are now being explored thoroughly nowadays as viable replacements for conventional SRAM based memories even for the higher levels of the memory hierarchy. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional(3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years...En el campo de la informática, el término ‘memoria’ se refiere generalmente a dispositivos que son usados para almacenar información que posteriormente será usada en diversos dispositivos, desde computadoras personales (PC), móviles, dispositivos inteligentes, etc. La memoria principal del sistema se utiliza para almacenar los datos e instrucciones de los procesos que se encuentre en ejecución, por lo que se requiere que funcionen a alta velocidad (por ejemplo, DRAM). La memoria principal está implementada habitualmente mediante memorias semiconductoras direccionables, siendo DRAM y SRAM los principales exponentes. Por otro lado, la memoria auxiliar o secundaria proporciona almacenaje(para ficheros, por ejemplo); es más lenta pero ofrece una mayor capacidad. Ejemplos típicos de memoria secundaria son discos duros, memorias flash portables, CDs y DVDs. Debido a que estos dispositivos no necesitan estar conectados a la computadora de forma permanente, son muy utilizados para almacenar copias de seguridad. La memoria secundaria almacena una gran cantidad de datos aun coste menor por bit que la memoria principal, siendo habitualmente dos órdenes de magnitud más barata que la memoria primaria. Existen dos tipos de memorias de tipo semiconductor: volátiles y no volátiles. Ejemplos de memorias no volátiles son las memorias Flash (algunas veces usadas como memoria secundaria y otras veces como memoria principal) y memorias ROM/PROM/EPROM/EEPROM (usadas para firmware como programas de arranque). Ejemplos de memoria volátil son las memorias DRAM (RAM dinámica), actualmente la opción predominante a la hora de implementar la memoria principal, y las memorias SRAM (RAM estática) más rápida y costosa, utilizada para los diferentes niveles de cache. Las tecnologías de memorias no volátiles basadas en electrónica de silicio se remontan a la década de1990. Una variante de memoria de almacenaje por carga denominada como memoria Flash es mundialmente usada en productos electrónicos de consumo como telefonía móvil y reproductores de música mientras NAND Flash solid state disks(SSDs) están progresivamente desplazando a los dispositivos de disco duro como principal unidad de almacenamiento en computadoras portátiles, de escritorio e incluso en centros de datos. En la actualidad, hay varios factores que amenazan la actual predominancia de memorias semiconductoras basadas en cargas (capacitivas). Por un lado, se está alcanzando el límite de integración de las memorias Flash, lo que compromete su escalado en el medio plazo. Por otra parte, el fuerte incremento de las corrientes de fuga de los transistores de silicio CMOS actuales, supone un enorme desafío para la integración de memorias SRAM. Asimismo, estas memorias son cada vez más susceptibles a fallos de lectura/escritura en diseños de bajo consumo. Como resultado de estos problemas, que se agravan con cada nueva generación tecnológica, en los últimos años se han intensificado los esfuerzos para desarrollar nuevas tecnologías que reemplacen o al menos complementen a las actuales. Los transistores de efecto campo eléctrico ferroso (FeFET en sus siglas en inglés) se consideran una de las alternativas más prometedores para sustituir tanto a Flash (por su mayor densidad) como a DRAM (por su mayor velocidad), pero aún está en una fase muy inicial de su desarrollo. Hay otras tecnologías algo más maduras, en el ámbito de las memorias RAM resistivas, entre las que cabe destacar ReRAM (o RRAM), STT-RAM, Domain Wall Memory y Phase Change Memory (PRAM)...Depto. de Arquitectura de Computadores y AutomáticaFac. de InformáticaTRUEunpu

    Runtime Systems for Persistent Memories

    Full text link
    Emerging persistent memory (PM) technologies promise the performance of DRAM with the durability of disk. However, several challenges remain in existing hardware, programming, and software systems that inhibit wide-scale PM adoption. This thesis focuses on building efficient mechanisms that span hardware and operating systems, and programming languages for integrating PMs in future systems. First, this thesis proposes a mechanism to solve low-endurance problem in PMs. PMs suffer from limited write endurance---PM cells can be written only 10^7-10^9 times before they wear out. Without any wear management, PM lifetime might be as low as 1.1 months. This thesis presents Kevlar, an OS-based wear-management technique for PM, that requires no new hardware. Kevlar uses existing virtual memory mechanisms to remap pages, enabling it to perform both wear leveling---shuffling pages in PM to even wear; and wear reduction---transparently migrating heavily written pages to DRAM. Crucially, Kevlar avoids the need for hardware support to track wear at fine grain. It relies on a novel wear-estimation technique that builds upon Intel's Precise Event Based Sampling to approximately track processor cache contents via a software-maintained Bloom filter and estimate write-back rates at fine grain. Second, this thesis proposes a persistency model for high-level languages to enable integration of PMs in to future programming systems. Prior works extend language memory models with a persistency model prescribing semantics for updates to PM. These approaches require high-overhead mechanisms, are restricted to certain synchronization constructs, provide incomplete semantics, and/or may recover to state that cannot arise in fault-free program execution. This thesis argues for persistency semantics that guarantee failure atomicity of synchronization-free regions (SFRs) --- program regions delimited by synchronization operations. The proposed approach provides clear semantics for the PM state that recovery code may observe and extends C++11's "sequential consistency for data-race-free" guarantee to post-failure recovery code. To this end, this thesis investigates two designs for failure-atomic SFRs that vary in performance and the degree to which commit of persistent state may lag execution. Finally, this thesis proposes StrandWeaver, a hardware persistency model that minimally constrains ordering on PM operations. Several language-level persistency models have emerged recently to aid programming recoverable data structures in PM. The language-level persistency models are built upon hardware primitives that impose stricter ordering constraints on PM operations than the persistency models require. StrandWeaver manages PM order within a strand, a logically independent sequence of PM operations within a thread. PM operations that lie on separate strands are unordered and may drain concurrently to PM. StrandWeaver implements primitives under strand persistency to allow programmers to improve concurrency and relax ordering constraints on updates as they drain to PM. Furthermore, StrandWeaver proposes mechanisms that map persistency semantics in high-level language persistency models to the primitives implemented by StrandWeaver.PHDComputer Science & EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttps://deepblue.lib.umich.edu/bitstream/2027.42/155100/1/vgogte_1.pd

    Design Space Exploration and Resource Management of Multi/Many-Core Systems

    Get PDF
    The increasing demand of processing a higher number of applications and related data on computing platforms has resulted in reliance on multi-/many-core chips as they facilitate parallel processing. However, there is a desire for these platforms to be energy-efficient and reliable, and they need to perform secure computations for the interest of the whole community. This book provides perspectives on the aforementioned aspects from leading researchers in terms of state-of-the-art contributions and upcoming trends
    corecore