Tehonhallinta integroidulle hermosignaalin hallintapiirille

Wireless biosignal measurement is a growing opportunity to increase the efficiency of medical procedures: An integrated circuit (receiver) is implanted inside human tissue and it’s output can be read wirelessly with a transmitter that also provides energy for the implant. This method requires RFID technology, where wireless data is transmitted in the RF-band back-and-forth between the receiver and transmitter. The receiver can be implemented either as an active design, where a local power supply is required inside the receiver, or as a passive design without internal energy storage. However, as the modern CMOS process is fairly advanced and the power consumption is low - passive designs are the most common. In the passive design the power for the receiver is drawn from the electromagnetic field transmitted to the chip, generally with electromagnetic induction. A design and implementation of an 860 MHz UHF-band RFID power system is presented in this work and its performance evaluated. The system was designed for a wireless EEG (electroencephalography) reader that can be implanted under the skalp – but the design principles can be expanded upon any RF-band RFID system. The final system works with an input power of -6.8 dBm with a startup time of slightly below 40 µs with specifications of 700 mV to 150 µA load. The LDO line regulation achieves a -51 dB level at DC with the full bandwidth covered. The RF Rectifier uses the design principles of a cross-coupled rectifier and a 63% conversion efficiency is achieved with the proposed matching circuitry. The reference circuitry is designed with the Betamultiplier architecture and expanded slightly to improve the current consumption in the circuit. The reference current is set at 100 nA and reference voltage at 400 mV.Langaton biosignaalien mittaus mahdollistaa yleisien lääketieteellisien signaalien mittauksien tehokkuuden kasvamista: Integroitu elektroninen piiri voidaan asentaa ihmisen kudokseen ja tämän sirun ulosantama tieto voidaan lukea langattomasti lukijalla, mikä useassa tapauksessa toimittaa myös energian sirulle. Tämä teknologia vaatii RFID teknologiaa, mikä on hyvin tunnettu ja tutkittu langattoman datan siirtämiseen kehitelty teknologia radiotaajuuksilla lukijan ja vastaanottimen välillä. Lukija voidaan suunnitella sekä passiiviseksi että aktiiviseksi, mutta modernin CMOS- teknologian tehonkulutus ominaisuuksien vuoksi RFID-lukijat ovat yleisesti passiivisia. Passiivisessa RFID suunnittelussa lukija vastaanottaa tarvitsemansa energian vastaanottimelta yleisesti elektromagneettisen induktion avulla. 860 MHz UHF-kaistan suunnitelu ja toteutus käydään läpi tässä työssä ja suorityskyky on mitattu simulaatioilla. Itse järjestelmä oli alunperin suunniteltu langattomaan EEG-lukijaan (aivosähkökäyrä), minkä pystyisi asentamaan päänahan alle - mutta periaatteet pätevät mihin tahansa RF-kaistan järjestelmään. Lopullinen järjestelmä toimii -6.8 dBm sisääntuloteholla ja käynnistysmisaika on hieman alle 40µs 700 mV ja 150 µA kuormaan. Linjaregulaatio saavuttaa -51 dB arvon alhaisilla taajuuksilla ja regulaatio on koko kaistan kattava. RF-tasasuuntaaja saavuttaa 63 % AC-DC huippu tehonmuutosarvon ehdotetulla impedanssien sovituspiirillä. Referenssipiiri on suunnitellu Betamultiplier-arkkitehtuurilla ja modifioitu pienentämään virrankulutusta. Referenssit ovat 100 nA ja 400 mV

Advanced CMOS Integrated Circuit Design and Application

The recent development of various application systems and platforms, such as 5G, B5G, 6G, and IoT, is based on the advancement of CMOS integrated circuit (IC) technology that enables them to implement high-performance chipsets. In addition to development in the traditional fields of analog and digital integrated circuits, the development of CMOS IC design and application in high-power and high-frequency operations, which was previously thought to be possible only with compound semiconductor technology, is a core technology that drives rapid industrial development. This book aims to highlight advances in all aspects of CMOS integrated circuit design and applications without discriminating between different operating frequencies, output powers, and the analog/digital domains. Specific topics in the book include: Next-generation CMOS circuit design and application; CMOS RF/microwave/millimeter-wave/terahertz-wave integrated circuits and systems; CMOS integrated circuits specially used for wireless or wired systems and applications such as converters, sensors, interfaces, frequency synthesizers/generators/rectifiers, and so on; Algorithm and signal-processing methods to improve the performance of CMOS circuits and systems

Development of a Sensor Readout Integrated Circuit Towards a Contact Lens for Wireless Intraocular Pressure Monitoring

This design covers the design of an integrated circuit (IC) in support of the active contact lens project at Cal Poly. The project aims to monitor intraocular eye pressure (IOP) to help diagnose and treat glaucoma, which is expected affect 6.3 million Americans by 2050. The IC is designed using IBM’s 130 nm 8RF process, is powered by an on-lens thin film 3.8 V rechargeable battery, and will be fabricated at no cost through MOSIS. The IC features a low-power linear regulator that powers a current-starved voltage-controlled oscillator (CSVCO) used for establishing a backscatter communication link. Additional circuitry is included to regulate power to and from the battery. An undervoltage lockout circuit protects the battery from deep discharge damage. When recharging, a rectifier and a voltage regulator provides overvoltage protection. These circuit blocks are biased primarily using a 696 mV subthreshold voltage reference that consumes 110.5 nA

Very large time constant Gm-C Filters

In this study a set of tools for the design of fully integrated transconductor-capacitor (Gm-C) filters, with very large time constants and current consumption under one micro-Ampere are presented. The selected application is a 2nd order bandpass-filter-amplifier, with a gain of 400 from 0.5 to 7Hz, carrying out the signal conditioning of a piezoelectric accelerometer which is part of an implantable cardiac pacemaker. The main challenge is to achieve very large time constants, without using any discrete external component. The chosen circuit technique to fulfill the requirement is series-parallel current division applied to standard symmetrical transconductors (OTAs). These circuits have demonstrated to be an excellent solution regarding their occupied area, power consumption, noise, linearity, and particularly offset. OTAs as low as 33pS -equivalent to a 30G resistor-, with up to 1V linear range, and input referred offset of a few mV, were designed, fabricated in a standard 0.8 micron CMOS technology, and tested. The application requires the series-parallel association of a large number of transistors, and the use of bias currents as low as a few pico-Amperes, which is not very common in analog integrated circuits. In this case the designer should employ maximum care in the selection of the transistor models to be used. A central aspect of this thesis was also to evaluate and develop noise and offset estimation models which was not obvious in the very beginning of the research. In the first two chapters an introduction to the target application is presented, and several MOS transistor characteristics in terms of the inversion coefficient -using the ACM transistor model- are evaluated. In chapter 3 it is discussed whether the usual flicker and thermal noise models are consistent regarding series-parallel association, and adequately represent the expected noise behavior under different bias conditions. A consistent, physics-based, one-equation-all-regions model for flicker noise in the MOS transistor is then presented. Several noise measurements are included demonstrating that the new model accurately fits widely different bias situations. A new model for mismatch offset in MOS transistors is presented, as a corollary of the flicker noise analysis. Finally, the correlation between flicker noise and mismatch offset, that can be seen as a DC noise, is shown. In chapter 4, the design of OTAs with an extended linear range, and very low transconductance, using series-parallel current division is presented. Precise tools are introduced for the estimation of noise and mismatch offset in series-parallel current mirrors, that are shown to help in the reduction of inaccuracies in the copy of currents with a large copy factor. The design and measurement of several OTA examples are presented. In chapter 5, the developed tools, and the OTAs shown, are employed in the design of the above mentioned filter for the piezoelectric accelerometer. A general methodology for the design of Gm-C filters with similar characteristics is established. The filter was fabricated and tested, successfully operating with a total power consumption of 233nA, up to a 2V power supply, with an input noise and mismatch offset of 2-4 Vrms, and 18 V respectively. To summarize the main results obtained were: The development of a new flicker noise model, the study of the effect of mismatch regarding series-parallel association, a new design methodology for OTAs and Gm-C filters. It is our hope that this constitutes a helpful set of tools for the circuit designer.En esta tesis se presenta un conjunto de herramientas para el diseño de circuitos integrados que implementan filtros transconductor-capacitor (Gm-C), de muy altas constantes de tiempo, con bajo ruido, y consumo de corriente por debajo del micro-Ampere. Como ejemplo de aplicación se toma un amplificador-pasabanda 2º orden, de ganancia 400 en la banda de 0.5 a 7Hz, que realiza el acondicionamiento de señal de un acelerómetro piezoeléctrico a ser empleado en un marcapasos implantable. El principal desafío es realizar en dicho filtro de tiempo continuo, muy altas constantes de tiempo sin usar componentes externos. La técnica elegida para alcanzar tal objetivo es la división serie-paralelo de corriente en transconductores (OTAs) simétricos estándar. Estos circuitos demostraron ser una excelente solución en cuanto al área ocupada, su consumo, ruido, linealidad, y en particular offset. Se diseñaron, fabricaron, y midieron, OTAs hasta 33pS -equivalente a una resistencia de 30G -, con hasta 1V de rango de lineal, y offset a la entrada de algunos mV, utilizando una tecnología CMOS de 0.8 micras de largo mínimo de canal. La aplicación requiere la asociación serie-paralelo de un gran número de transistores, y polarización con corrientes de hasta pico-Amperes, lo que constituye una situación poco frecuente en circuitos integrados analógicos. En este marco el diseñador debe elegir los modelos de transistor con sumo cuidado. Un aspecto central de esta tesis es también, el estudio y presentación de modelos adecuados de ruido y offset, que no resultan obvios al principio. En los primeros dos capítulos se realiza una introducción y se revisa, utilizando el modelo ACM, diferentes características del transistor MOS en función del nivel de inversión. En el capítulo 3 revisa la pertinencia y consistencia frente a la asociación serie-paralelo, de los modelos usuales de ruido de flicker o 1/f, y térmico. Luego se presenta, incluyendo medidas, un nuevo modelo físico, consistente, simple, y válido en todas las regiones de operación del transistor MOS, para el ruido de flicker. Como corolario a este estudio se presenta un nuevo modelo para estimar el desapareo entre transistores, en función no solo de la geometría, pero también de la polarización. Se demuestra la correlación, debido a su origen físico análogo, entre el ruido de flicker y el offset por desapareo que puede ser visto como un ruido en DC. En el capítulo 4 se presenta el diseño de OTAs con rango de linealidad extendido, y muy baja transconductancia, utilizando división serie-paralelo de corriente. Se presentan herramientas precisas para la estimación de offset y ruido y se demuestra la utilidad de la técnica para reducir el offset en espejos de corriente. Se presenta el diseño y medida de diversos OTAs. En el capítulo 5, las herramientas desarrolladas, y los OTAs presentados, son empleados en el diseño del filtro descripto para un acelerómetro piezoeléctrico. Se establece una metodología general para el diseño de filtros Gm-C con características similares. El filtro se fabricó y midió, operando en forma satisfactoria, con un consumo total de 230nA y hasta los 2V de tensión de alimentación, con ruido y offset a la entrada de tan solo 2-4 Vrms, y 18 V respectivamente. El desarrollo de un nuevo modelo de ruido 1/f para el transistor MOS, el estudio de la influencia del offset frente a la asociación serie-paralelo y su aplicación en OTAs, la metodología de diseño empleada, la demostración del uso de técnicas novedosas en una aplicación como la elegida que tiene relevancia tecnológica e interés académico; esperamos que todo ello constituya una contribución valiosa para la comunidad científica en microelectrónica y un conjunto de herramientas de utilidad para el diseño de circuitos

RF Power Transfer, Energy Harvesting, and Power Management Strategies

Energy harvesting is the way to capture green energy. This can be thought of as a recycling process where energy is converted from one form (here, non-electrical) to another (here, electrical). This is done on the large energy scale as well as low energy scale. The former can enable sustainable operation of facilities, while the latter can have a significant impact on the problems of energy constrained portable applications. Different energy sources can be complementary to one another and combining multiple-source is of great importance. In particular, RF energy harvesting is a natural choice for the portable applications. There are many advantages, such as cordless operation and light-weight. Moreover, the needed infra-structure can possibly be incorporated with wearable and portable devices. RF energy harvesting is an enabling key player for Internet of Things technology. The RF energy harvesting systems consist of external antennas, LC matching networks, RF rectifiers for ac to dc conversion, and sometimes power management. Moreover, combining different energy harvesting sources is essential for robustness and sustainability. Wireless power transfer has recently been applied for battery charging of portable devices. This charging process impacts the daily experience of every human who uses electronic applications. Instead of having many types of cumbersome cords and many different standards while the users are responsible to connect periodically to ac outlets, the new approach is to have the transmitters ready in the near region and can transfer power wirelessly to the devices whenever needed. Wireless power transfer consists of a dc to ac conversion transmitter, coupled inductors between transmitter and receiver, and an ac to dc conversion receiver. Alternative far field operation is still tested for health issues. So, the focus in this study is on near field. The goals of this study are to investigate the possibilities of RF energy harvesting from various sources in the far field, dc energy combining, wireless power transfer in the near field, the underlying power management strategies, and the integration on silicon. This integration is the ultimate goal for cheap solutions to enable the technology for broader use. All systems were designed, implemented and tested to demonstrate proof-of concept prototypes

High-Efficiency Low-Voltage Rectifiers for Power Scavenging Systems

Abstract Rectifiers are commonly used in electrical energy conversion chains to transform the energy obtained from an AC signal source to a DC level. Conventional bridge and gate cross-coupled rectifier topologies are not sufficiently power efficient, particularly when input amplitudes are low. Depending on their rectifying element, their power efficiency is constrained by either the forward-bias voltage drop of a diode or the threshold voltage of a diode-connected MOS transistor. Advanced passive rectifiers use threshold cancellation techniques to effectively reduce the threshold voltage of MOS diodes. Active rectifiers use active circuits to control the conduction angle of low-loss MOS switches. In this thesis, an active rectifier with a gate cross-coupled topology is proposed, which replaces the diode-connected MOS transistors of a conventional rectifier with low-loss MOS switches. Using the inherent characteristics of MOS transistors as comparators, dynamic biasing of the bulks of main switches and small pull-up transistors, the proposed self-supplied active rectifier exhibits smaller voltage drop across the main switches leading to a higher power efficiency compared to conventional rectifier structures for a wide range of operating frequencies in the MHz range. Delivery of high load currents is another feature of the proposed rectifier. Using the bootstrapping technique, single- and double-reservoir based rectifiers are proposed. They present higher power and voltage conversion efficiencies compared to conventional rectifier structures. With a source amplitude of 3.3 V, when compared to the gate cross-coupled topology, the proposed active rectifier offers power and voltage conversion efficiencies improved by up to 10% and 16% respectively. The proposed rectifier using the bootstrap technique, including double- and single-reservoir schemes, are well suited for very low input amplitudes. They present power and voltage conversion efficiencies of 75% and 76% at input amplitude of 1.0 V and maintain their high efficiencies over input amplitudes greater than 1.0V. Single-reservoir bootstrap rectifier also reduces die area by 70% compared to its double-reservoir counterpart.---------Résumé Les redresseurs sont couramment utilisés dans de nombreux systèmes afin de transformer l'énergie électrique obtenue à partir d'une source alternative en une alimentation continue. Les topologies traditionnelles telles que les ponts de diodes et les redresseurs se servant de transistors à grilles croisées-couplées ne sont pas suffisamment efficaces en terme d’énergie, en particulier pour des signaux à faibles amplitudes. Dépendamment de leur élément de redressement, leur efficacité en termes de consommation d’énergie est limitée soit par la chute de tension de polarisation directe d'une diode, soit par la tension de seuil du transistor MOS. Les redresseurs passifs avancés utilisent une technique de conception pour réduire la tension de seuil des diodes MOS. Les redresseurs actifs utilisent des circuits actifs pour contrôler l'angle de conduction des commutateurs MOS à faible perte. Dans cette thèse, nous avons proposé un redresseur actif avec une topologie en grille croisée-couplée. Elle utilise des commutateurs MOS à faible perte à la place des transistors MOS connectés en diode comme redresseurs. Le circuit proposé utilise: des caractéristiques intrinsèques des transistors MOS pour les montages comparateurs et une polarisation dynamique des substrats des commutateurs principaux supportés par de petits transistors de rappel. Le redresseur proposé présente des faibles chutes de tension à travers le commutateur principal menant à une efficacité de puissance plus élevée par rapport aux structures d’un redresseur conventionnel pour une large gamme de fréquences de fonctionnement de l’ordre des MHz. La conduction des courants de charge élevée est une autre caractéristique du redresseur proposé. En utilisant la méthode de bootstrap, des redresseurs à simple et à double réservoir sont proposés. Ils présentent une efficacité de puissance et un rapport de conversion de tension élevés en comparaison avec les structures des redresseurs conventionnels. Avec une amplitude de source de 3,3 V, le redresseur proposé offre des efficacités de puissance et de conversion de tension améliorées par rapport au circuit à transistors croisés couplés. Ces améliorations atteignent 10% et 16% respectivement. Les redresseurs proposés utilisent la technique de bootstrap. Ils sont bien adaptés pour des amplitudes d'entrée très basses. À une amplitude d'entrée de 1,0 V, ces derniers redresseurs présentent des rendements de conversion de puissance et de tension de 75% et 76%. Le redresseur à simple réservoir réduit également l’aire de silicium requise de 70% par rapport à la version à double-réservoir

Passive und aktive Radio Frequency Identification Tags im 60-GHz-Band

Die Einführung des millimeter-Wellen-Bandes eröffnet neue Perspektiven für die Radio Frequency Identification (RFID) Kommunikationssysteme. Der Enwurf des Systems im 60-GHz-Band ermöglicht die Implementierung der On-Chip Antenne und darüber hinaus die Implementierung eines RFID-Tags auf einem einzigen Chip. Dennoch ist es aufgrund der gesetzlichen Beschränkung der effektiven isotropen Strahlungsleistung (EIRP) des Lesegeräts und der erhöhten Freiraum-Dielektrikumsverluste eine Herausforderung, eine zuverlässige Kommunikationsreichweite von mehreren Millimetern zu erreichen. Neue Lösungen sind für jeden Block sowohl im Lesegerät als auch im Single-Chip-Tag erforderlich. Obwohl das Lesegerät batteriebetrieben ist, ist es immer noch eine Herausforderung, die maximal zulässigen 20 dBm IERP des Lesersenders energieeffizient zu erzeugen. Darüber hinaus sollte der Empfänger einen ausreichenden Dynamikbereich haben, um das vom Tag kommende Signal zu erkennen. Auf der Tag-Seite sind die Hauptherausforderungen das Co-Design der effizienten On-Chip-Antennen-Implementierung, die hochempfindliche Gleichrichter-Implementierung und das Rückkommunikationskonzept. Diese Arbeit konzentriert sich auf die Machbarkeitsstudie des Single-Chip-RFID-Tags und die Implementierung im Millimeterwellenbereich. Es werden zwei Rückkommunikationskonzepte untersucht - Backscattering-Rückkommunikation und eine Kommunikation unter Verwendung von Ultra-Low-Power (ULP) Radios. Beide werden in einem 22 nm FDSOI Prozess auf einem Substrat mit geringem Widerstand implementiert. Beide Tags arbeiten mit einer Versorgungsspannung von 0,4 V, um die Kommunikationsreichweite zu maximieren. Die Link-Budgets sind so ausgelegt, dass sie die regulatorischen Beschränkungen einhalten. Die Auswahl des Technologieknotens wird begründet. Verschiedene Aspekte im Zusammenhang mit der Technologie werden diskutiert, wie z. B. Geräteleistung, passiver Qualitätsfaktor, Leistungsdichte der Kondensatoren. Der Backscattering RFID-Tag wird zuerst entworfen, da er eine relativ einfachere Topologie hat. Die Probleme der Gleichrichterempfindlichkeit im Rahmen des analogen Frontends, der On-Chip-Antenneneffizienz und der konjugierten Anpassung beider werden untersucht. Eine Kommunikationsreichweite von 5 mm wird angestrebt und realisiert. Um die Kommunikationsreichweite weiter zu erhöhen, wird in der zweiten Phase ein Tag mit einer aktiven Rückkommunikation implementiert. Hier wird die Gleichrichterempfindlichkeit weiter verbessert. Es wird ein 0,4V ULP Radio entworfen, das sich die Antenne mit dem Gleichrichter über einen Single-Pole- Double-Through (SPDT) Schalter teilt. Ein Abstand von 2 cm erwies sich als realisierbar, wobei die gesetzlichen Bestimmungen eingehalten und der dynamische Bereich des Leseempfängers nicht überschritten wurde. Es wird die höchste normalisierte Kommunikationsreichweite pro Leser-EIRP erreicht. Weitere Verbesserungsmöglichkeiten werden diskutiert