When Do WOM Codes Improve the Erasure Factor in Flash Memories?

Flash memory is a write-once medium in which reprogramming cells requires first erasing the block that contains them. The lifetime of the flash is a function of the number of block erasures and can be as small as several thousands. To reduce the number of block erasures, pages, which are the smallest write unit, are rewritten out-of-place in the memory. A Write-once memory (WOM) code is a coding scheme which enables to write multiple times to the block before an erasure. However, these codes come with significant rate loss. For example, the rate for writing twice (with the same rate) is at most 0.77. In this paper, we study WOM codes and their tradeoff between rate loss and reduction in the number of block erasures, when pages are written uniformly at random. First, we introduce a new measure, called erasure factor, that reflects both the number of block erasures and the amount of data that can be written on each block. A key point in our analysis is that this tradeoff depends upon the specific implementation of WOM codes in the memory. We consider two systems that use WOM codes; a conventional scheme that was commonly used, and a new recent design that preserves the overall storage capacity. While the first system can improve the erasure factor only when the storage rate is at most 0.6442, we show that the second scheme always improves this figure of merit.Comment: to be presented at ISIT 201

On Benchmarking Embedded Linux Flash File Systems

Due to its attractive characteristics in terms of performance, weight and power consumption, NAND flash memory became the main non volatile memory (NVM) in embedded systems. Those NVMs also present some specific characteristics/constraints: good but asymmetric I/O performance, limited lifetime, write/erase granularity asymmetry, etc. Those peculiarities are either managed in hardware for flash disks (SSDs, SD cards, USB sticks, etc.) or in software for raw embedded flash chips. When managed in software, flash algorithms and structures are implemented in a specific flash file system (FFS). In this paper, we present a performance study of the most widely used FFSs in embedded Linux: JFFS2, UBIFS,and YAFFS. We show some very particular behaviors and large performance disparities for tested FFS operations such as mounting, copying, and searching file trees, compression, etc.Comment: Embed With Linux, Lorient : France (2012

Study On Endurance Of Flash Memory Ssds

Flash memory promises to revolutionize storage systems because of its massive performance gains, ruggedness, large decrease in power usage and physical space requirements, but it is not a direct replacement for magnetic hard disks. Flash memory possesses fundamentally different characteristics and in order to fully utilize the positive aspects of flash memory, we must engineer around its unique limitations. The primary limitations are lack of in-place updates, the asymmetry between the sizes of the write and erase operations, and the limited endurance of flash memory cells. This leads to the need for efficient methods for block cleaning, combating write amplification and performing wear leveling. These are fundamental attributes of flash memory and will always need to be understood and efficiently managed to produce an efficient and high performance storage system. Our goal in this work is to provide analysis and algorithms for efficiently managing data storage for endurance in flash memory. We present update codes, a class of floating codes, which encodes data updates as flash memory cell increments that results in reduced block erases and longer lifespan of flash memory, and provides a new algorithm for constructing optimal floating codes. We also analyze the theoretically possible limits of write amplification reduction and minimization by using offline workloads. We give an estimation of the minimal write amplification by a workload decomposition algorithm and find that write amplification can be pushed to zero with relatively low over-provisioning. Additionally, we give simple, efficient and practical algorithms that are effective in reducing write amplification and performing wear leveling. Finally, we present a quantitative model of wear levels in flash memory by constructing a difference equation that gives erase counts of a block with workload, wear leveling strategy and SSD configuration as parameters

Bridging the Gap between Application and Solid-State-Drives

Data storage is one of the important and often critical parts of the computing system in terms of performance, cost, reliability, and energy. Numerous new memory technologies, such as NAND flash, phase change memory (PCM), magnetic RAM (STT-RAM) and Memristor, have emerged recently. Many of them have already entered the production system. Traditional storage optimization and caching algorithms are far from optimal because storage I/Os do not show simple locality. To provide optimal storage we need accurate predictions of I/O behavior. However, the workloads are increasingly dynamic and diverse, making the long and short time I/O prediction challenge. Because of the evolution of the storage technologies and the increasing diversity of workloads, the storage software is becoming more and more complex. For example, Flash Translation Layer (FTL) is added for NAND-flash based Solid State Disks (NAND-SSDs). However, it introduces overhead such as address translation delay and garbage collection costs. There are many recent studies aim to address the overhead. Unfortunately, there is no one-size-fits-all solution due to the variety of workloads. Despite rapidly evolving in storage technologies, the increasing heterogeneity and diversity in machines and workloads coupled with the continued data explosion exacerbate the gap between computing and storage speeds. In this dissertation, we improve the data storage performance from both top-down and bottom-up approach. First, we will investigate exposing the storage level parallelism so that applications can avoid I/O contentions and workloads skew when scheduling the jobs. Second, we will study how architecture aware task scheduling can improve the performance of the application when PCM based NVRAM are equipped. Third, we will develop an I/O correlation aware flash translation layer for NAND-flash based Solid State Disks. Fourth, we will build a DRAM-based correlation aware FTL emulator and study the performance in various filesystems

Integration of Non-volatile Memory into Storage Hierarchy

In this dissertation, we present novel approaches for integrating non-volatile memory devices into storage hierarchy of a computer system. There are several types of non- volatile memory devices, such as flash memory, Phase Change Memory (PCM), Spin- transfer torque memory (STT-RAM). These devices have many appealing features for applications; however, they also offer several challenges. This dissertation is focused on how to efficiently integrate these non-volatile memories into existing memory and disk storage systems. This work is composed of two major parts. The first part investigates a main-memory system employing Phase Change Memory instead of traditional DRAM. Compared to DRAM, PCM has higher density and no static power consumption, which are very important factors for building large capacity memory systems. However, PCM has higher write latency and power consumption compared to read operations. Moreover, PCM has limited write endurance. To efficiently integrate PCM into a memory system, we have to solve the challenges brought by its expensive write operations. We propose new replacement policies and cache organizations for the last-level CPU cache, which can effectively reduce the write traffic to the PCM main memory. We evaluated our design with multiple workloads and configurations. The results show that the proposed approaches improve the lifetime and energy consumption of PCM significantly. The second part of the dissertation considers the design of a data/disk storage using non-volatile memories, e.g. flash memory, PCM and nonvolatile DIMMs. We consider multiple design options for utilizing the nonvolatile memories in the storage hierarchy. First, we consider a system that employs nonvolatile memories such as PCM or nonvolatile DIMMs on memory bus along with flash-based SSDs. We propose a hybrid file system, NVMFS, that manages both these devices. NVMFS exploits the nonvolatile memory to improve the characteristics of the write workload at the SSD. We satisfy most small random write requests on the fast nonvolatile DIMM and only do large and optimized writes on SSD. We also group data of similar update patterns together before writing to flash-SSD; as a result, we can effectively reduce the garbage collection overhead. We implemented a prototype of NVMFS in Linux and evaluated its performance through multiple benchmarks. Secondly, we consider the problem of using flash memory as a cache for a disk drive based storage system. Since SSDs are expensive, a few SSDs are designed to serve as a cache for a large number of disk drives. SSD cache space can be used for both read and write requests. In our design, we managed multiple flash-SSD devices directly at the cache layer without the help of RAID software. To ensure data reliability and cache space efficiency, we only duplicated dirty data on flash- SSDs. We also balanced the write endurance of different flash-SSDs. As a result, no single SSD will fail much earlier than the others. Thirdly, when using PCM-like devices only as data storage, it’s possible to exploit memory management hardware resources to improve file system performance. However, in this case, PCM may share critical system resources such as the TLB, page table with DRAM which can potentially impact PCM’s performance. To solve this problem, we proposed to employ superpages to reduce the pressure on memory management resources. As a result, the file system performance is further improved

Probabilistic Page Replacement Policy in Buffer Cache Management for Flash-Based Cloud Databases

In the fast evolution of storage systems, the newly emerged flash memory-based Solid State Drives (SSDs) are becoming an important part of the computer storage hierarchy. Amongst the several advantages of flash-based SSDs, high read performance, and low power consumption are of primary importance. Amongst its few disadvantages, its asymmetric I/O latencies for read, write and erase operations are the most crucial for overall performance. In this paper, we proposed two novel probabilistic adaptive algorithms that compute the future probability of reference based on recency, frequency, and periodicity of past page references. The page replacement is performed by considering the probability of reference of cached pages as well as asymmetric read-write-erase properties of flash devices. The experimental results show that our proposed method is successful in minimizing the performance overheads of flash-based systems as well as in maintaining the good hit ratio. The results also justify the utility of a genetic algorithm in maximizing the overall performance gains

Flash Memory Devices

Flash memory devices have represented a breakthrough in storage since their inception in the mid-1980s, and innovation is still ongoing. The peculiarity of such technology is an inherent flexibility in terms of performance and integration density according to the architecture devised for integration. The NOR Flash technology is still the workhorse of many code storage applications in the embedded world, ranging from microcontrollers for automotive environment to IoT smart devices. Their usage is also forecasted to be fundamental in emerging AI edge scenario. On the contrary, when massive data storage is required, NAND Flash memories are necessary to have in a system. You can find NAND Flash in USB sticks, cards, but most of all in Solid-State Drives (SSDs). Since SSDs are extremely demanding in terms of storage capacity, they fueled a new wave of innovation, namely the 3D architecture. Today “3D” means that multiple layers of memory cells are manufactured within the same piece of silicon, easily reaching a terabit capacity. So far, Flash architectures have always been based on "floating gate," where the information is stored by injecting electrons in a piece of polysilicon surrounded by oxide. On the contrary, emerging concepts are based on "charge trap" cells. In summary, flash memory devices represent the largest landscape of storage devices, and we expect more advancements in the coming years. This will require a lot of innovation in process technology, materials, circuit design, flash management algorithms, Error Correction Code and, finally, system co-design for new applications such as AI and security enforcement

Performance and Reliability Study and Exploration of NAND Flash-based Solid State Drives

The research that stems from my doctoral dissertation focuses on addressing essential challenges in developing techniques that utilize solid-state memory technologies (with emphasis on NAND flash memory) from device, circuit, architecture, and system perspectives in order to exploit their true potential for improving I/O performance in high-performance computing systems. These challenges include not only the performance quirks arising from the physical nature of NAND flash memory, e.g., the inability to modify data in-place, read/write performance asymmetry, and slow and constrained erase functionality, but also the reliability drawbacks that limits solid state drives (SSDs) from widely deployed. To address these challenges, I have proposed, analyzed, and evaluated the I/O scheduling schemes, strategies for storage space virtualization, and data protection methods, to boost the performance and reliability of SSDs