Robustness Analysis of Controllable-Polarity Silicon Nanowire Devices and Circuits

Substantial downscaling of the feature size in current CMOS technology has confronted digital designers with serious challenges including short channel effect and high amount of leakage power. To address these problems, emerging nano-devices, e.g., Silicon NanoWire FET (SiNWFET), is being introduced by the research community. These devices keep on pursuing Mooreâs Law by improving channel electrostatic controllability, thereby reducing the Off âstate leakage current. In addition to these improvements, recent developments introduced devices with enhanced capabilities, such as Controllable-Polarity (CP) SiNWFETs, which make them very interesting for compact logic cell and arithmetic circuits. At advanced technology nodes, the amount of physical controls, during the fabrication process of nanometer devices, cannot be precisely determined because of technology fluctuations. Consequently, the structural parameters of fabricated circuits can be significantly different from their nominal values. Moreover, giving an a-priori conclusion on the variability of advanced technologies for emerging nanoscale devices, is a difficult task and novel estimation methodologies are required. This is a necessity to guarantee the performance and the reliability of future integrated circuits. Statistical analysis of process variation requires a great amount of numerical data for nanoscale devices. This introduces a serious challenge for variability analysis of emerging technologies due to the lack of fast simulation models. One the one hand, the development of accurate compact models entails numerous tests and costly measurements on fabricated devices. On the other hand, Technology Computer Aided Design (TCAD) simulations, that can provide precise information about devices behavior, are too slow to timely generate large enough data set. In this research, a fast methodology for generating data set for variability analysis is introduced. This methodology combines the TCAD simulations with a learning algorithm to alleviate the time complexity of data set generation. Another formidable challenge for variability analysis of the large circuits is growing number of process variation sources. Utilizing parameterized models is becoming a necessity for chip design and verification. However, the high dimensionality of parameter space imposes a serious problem. Unfortunately, the available dimensionality reduction techniques cannot be employed for three main reasons of lack of accuracy, distribution dependency of the data points, and finally incompatibility with device and circuit simulators. We propose a novel technique of parameter selection for modeling process and performance variation. The proposed technique efficiently addresses the aforementioned problems. Appropriate testing, to capture manufacturing defects, plays an important role on the quality of integrated circuits. Compared to conventional CMOS, emerging nano-devices such as CP-SiNWFETs have different fabrication process steps. In this case, current fault models must be extended for defect detection. In this research, we extracted the possible fabrication defects, and then proposed a fault model for this technology. We also provided a couple of test methods for detecting the manufacturing defects in various types of CP-SiNWFET logic gates. Finally, we used the obtained fault model to build fault tolerant arithmetic circuits with a bunch of superior properties compared to their competitors

Self-Checking Ripple-Carry Adder with Ambipolar Silicon Nanowire FET

For the rapid adoption of new and aggressive technologies such as ambipolar Silicon NanoWire (SiNW), addressing fault-tolerance is necessary. Traditionally, transient fault detection implies large hardware overhead or performance decrease compared to permanent fault detection. In this paper, we focus on on-line testing and its application to ambipolar SiNW. We demonstrate on self - checking ripple - carry adder how ambipolar design style can help reduce the hardware overhead. When compared with equivalent CMOS process, ambipolar SiNW design shows a reduction in area of at least 56% (28%) with a decreased delay of 62% (6%) for Static (Transmission Gate) design style

Nanowire systems: technology and design (invited paper)

Nanosystems are large-scale integrated systems exploiting nanoelectronic devices. In this work, we consider double independent gate, vertically-stacked nanowire FETs with gate-all-around structures and typical diameter of 20-nm. These devices, which we have successfully fabricated and evaluated, control the ambipolar behavior of the nanostructure by selectively enabling one type of carriers. These transistors work as switches with electrically-programmable polarity and thus realize an exclusive or operation. The intrinsic higher expressive power of these FETs, as compared to standard CMOS, enables us to realize more efficient library cells, which we organize as tiles to realize circuits by regular arrays. This article surveys both the technology for double independent gate FETs as well as physical and logic design tools to realize digital systems with this fabrication technology

A Novel Reconfiguration Scheme in Quantum-Dot Cellular Automata for Energy Efficient Nanocomputing

Quantum-Dot Cellular Automata (QCA) is currently being investigated as an alternative to CMOS technology. There has been extensive study on a wide range of circuits from simple logical circuits such as adders to complex circuits such as 4-bit processors. At the same time, little if any work has been done in considering the possibility of reconfiguration to reduce power in QCA devices. This work presents one of the first such efforts when considering reconfigurable QCA architectures which are expected to be both robust and power efficient. We present a new reconfiguration scheme which is highly robust and is expected to dissipate less power with respect to conventional designs. An adder design based on the reconfiguration scheme will be presented in this thesis, with a detailed power analysis and comparison with existing designs. In order to overcome the problems of routing which comes with reconfigurability, a new wire crossing mechanism is also presented as part of this thesis

Fault-Tolerant Computing: An Overview

Coordinated Science Laboratory was formerly known as Control Systems LaboratoryNASA / NAG-1-613Semiconductor Research Corporation / 90-DP-109Joint Services Electronics Program / N00014-90-J-127

The Fifth NASA Symposium on VLSI Design

The fifth annual NASA Symposium on VLSI Design had 13 sessions including Radiation Effects, Architectures, Mixed Signal, Design Techniques, Fault Testing, Synthesis, Signal Processing, and other Featured Presentations. The symposium provides insights into developments in VLSI and digital systems which can be used to increase data systems performance. The presentations share insights into next generation advances that will serve as a basis for future VLSI design

An Integrated Test Plan for an Advanced Very Large Scale Integrated Circuit Design Group

VLSI testing poses a number of problems which includes the selection of test techniques, the determination of acceptable fault coverage levels, and test vector generation. Available device test techniques are examined and compared. Design rules should be employed to assure the design is testable. Logic simulation systems and available test utilities are compared. The various methods of test vector generation are also examined. The selection criteria for test techniques are identified. A table of proposed design rules is included. Testability measurement utilities can be used to statistically predict the test generation effort. Field reject rates and fault coverage are statistically related. Acceptable field reject rates can be achieved with less than full test vector fault coverage. The methods and techniques which are examined form the basis of the recommended integrated test plan. The methods of automatic test vector generation are relatively primitive but are improving

Design and Control of Electrical Motor Drives

Dear Colleagues, I am very happy to have this Special Issue of the journal Energies on the topic of Design and Control of Electrical Motor Drives published. Electrical motor drives are widely used in the industry, automation, transportation, and home appliances. Indeed, rolling mills, machine tools, high-speed trains, subway systems, elevators, electric vehicles, air conditioners, all depend on electrical motor drives.However, the production of effective and practical motors and drives requires flexibility in the regulation of current, torque, flux, acceleration, position, and speed. Without proper modeling, drive, and control, these motor drive systems cannot function effectively.To address these issues, we need to focus on the design, modeling, drive, and control of different types of motors, such as induction motors, permanent magnet synchronous motors, brushless DC motors, DC motors, synchronous reluctance motors, switched reluctance motors, flux-switching motors, linear motors, and step motors.Therefore, relevant research topics in this field of study include modeling electrical motor drives, both in transient and in steady-state, and designing control methods based on novel control strategies (e.g., PI controllers, fuzzy logic controllers, neural network controllers, predictive controllers, adaptive controllers, nonlinear controllers, etc.), with particular attention to transient responses, load disturbances, fault tolerance, and multi-motor drive techniques. This Special Issue include original contributions regarding recent developments and ideas in motor design, motor drive, and motor control. The topics include motor design, field-oriented control, torque control, reliability improvement, advanced controllers for motor drive systems, DSP-based sensorless motor drive systems, high-performance motor drive systems, high-efficiency motor drive systems, and practical applications of motor drive systems. I want to sincerely thank authors, reviewers, and staff members for their time and efforts. Prof. Dr. Tian-Hua Liu Guest Edito

Multiple-Independent-Gate Field-Effect Transistors for High Computational Density and Low Power Consumption

Transistors are the fundamental elements in Integrated Circuits (IC). The development of transistors significantly improves the circuit performance. Numerous technology innovations have been adopted to maintain the continuous scaling down of transistors. With all these innovations and efforts, the transistor size is approaching the natural limitations of materials in the near future. The circuits are expected to compute in a more efficient way. From this perspective, new device concepts are desirable to exploit additional functionality. On the other hand, with the continuously increased device density on the chips, reducing the power consumption has become a key concern in IC design. To overcome the limitations of Complementary Metal-Oxide-Semiconductor (CMOS) technology in computing efficiency and power reduction, this thesis introduces the multiple- independent-gate Field-Effect Transistors (FETs) with silicon nanowires and FinFET structures. The device not only has the capability of polarity control, but also provides dual-threshold- voltage and steep-subthreshold-slope operations for power reduction in circuit design. By independently modulating the Schottky junctions between metallic source/drain and semiconductor channel, the dual-threshold-voltage characteristics with controllable polarity are achieved in a single device. This property is demonstrated in both experiments and simulations. Thanks to the compact implementation of logic functions, circuit-level benchmarking shows promising performance with a configurable dual-threshold-voltage physical design, which is suitable for low-power applications. This thesis also experimentally demonstrates the steep-subthreshold-slope operation in the multiple-independent-gate FETs. Based on a positive feedback induced by weak impact ionization, the measured characteristics of the device achieve a steep subthreshold slope of 6 mV/dec over 5 decades of current. High Ion/Ioff ratio and low leakage current are also simultaneously obtained with a good reliability. Based on a physical analysis of the device operation, feasible improvements are suggested to further enhance the performance. A physics-based surface potential and drain current model is also derived for the polarity-controllable Silicon Nanowire FETs (SiNWFETs). By solving the carrier transport at Schottky junctions and in the channel, the core model captures the operation with independent gate control. It can serve as the core framework for developing a complete compact model by integrating advanced physical effects. To summarize, multiple-independent-gate SiNWFETs and FinFETs are extensively studied in terms of fabrication, modeling, and simulation. The proposed device concept expands the family of polarity-controllable FETs. In addition to the enhanced logic functionality, the polarity-controllable SiNWFETs and FinFETs with the dual-threshold-voltage and steep-subthreshold-slope operation can be promising candidates for future IC design towards low-power applications