96 research outputs found

    Advances in Solid State Circuit Technologies

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    This book brings together contributions from experts in the fields to describe the current status of important topics in solid-state circuit technologies. It consists of 20 chapters which are grouped under the following categories: general information, circuits and devices, materials, and characterization techniques. These chapters have been written by renowned experts in the respective fields making this book valuable to the integrated circuits and materials science communities. It is intended for a diverse readership including electrical engineers and material scientists in the industry and academic institutions. Readers will be able to familiarize themselves with the latest technologies in the various fields

    Implementation and Characterisation of Monolithic CMOS Pixel Sensors for the CLIC Vertex and Tracking Detectors

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    Different CMOS technologies are being considered for the vertex and tracking layers of the detector at the proposed high-energy e+^{+}e−^{−} Compact Linear Collider (CLIC). CMOS processes have been proven to be suitable for building high granularity, large area detector systems with low material budget and low power consumption. An effort is put on implementing detectors capable of performing precise timing measurements. Two Application-Specific Integrated Circuits (ASICs) for particle detection have been developed in the framework of this thesis, following the specifications of the CLIC vertex and tracking detectors. The process choice was based on a study of the features of each of the different available technologies and an evaluation of their suitability for each application. The CLICpix Capacitively Coupled Pixel Detector (C3PD) is a pixelated detector chip designed to be used in capacitively coupled assemblies with the CLICpix2 readout chip, in the framework of the vertex detector at CLIC. The chip comprises a matrix of 128×128 square pixels with 25 ”m pitch. A commercial 180 nm High-Voltage (HV) CMOS process was used for the C3PD design. The charge is collected with a large deep N-well, while each pixel includes a preamplifier placed on top of the collecting electrode. The C3PD chip was produced on wafers with different values for the substrate resistivity (∌ 20, 80, 200 and 1000 ℩cm) and has been extensively tested through laboratory measurements and beam tests. The design details and characterisation results of the C3PD chip will be presented. The CLIC Tracker Detector (CLICTD) is a novel monolithic detector chip developed in the context of the silicon tracker at CLIC. The CLICTD chip combines high density, mixed mode circuits on the same substrate, while it performs a fast time-tagging measurement with 10 ns time bins. The chip is produced in a 180 nm CMOS imaging process with a High-Resistivity (HR) epitaxial layer. A matrix of 16×128 detecting cells, each measuring 300 × 30 ”m2^{2} , is included. A small N-well is used to collect the charge generated in the sensor volume, while an additional deep N-type implant is used to fully deplete the epitaxial layer. Using a process split, additional wafers are produced with a segmented deep N-type implant, a modification that has been simulated to result in a faster charge collection time. Each detecting cell is segmented into eight front-ends to ensure prompt charge collection in the sensor diodes. A simultaneous 8-bit timing and 5-bit energy measurement is performed in each detecting cell. A detailed description of the CLICTD design will be given, followed by the first measurement results

    High Temperature Electronics Design for Aero Engine Controls and Health Monitoring

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    There is a growing desire to install electronic power and control systems in high temperature harsh environments to improve the accuracy of critical measurements, reduce the amount of cabling and to eliminate cooling systems. Typical target applications include electronics for energy exploration, power generation and control systems. Technical topics presented in this book include:‱ High temperature electronics market‱ High temperature devices, materials and assembly processes‱ Design, manufacture and testing of multi-sensor data acquisition system for aero-engine control‱ Future applications for high temperature electronicsHigh Temperature Electronics Design for Aero Engine Controls and Health Monitoring contains details of state of the art design and manufacture of electronics targeted towards a high temperature aero-engine application. High Temperature Electronics Design for Aero Engine Controls and Health Monitoring is ideal for design, manufacturing and test personnel in the aerospace and other harsh environment industries as well as academic staff and master/research students in electronics engineering, materials science and aerospace engineering

    Solid State Circuits Technologies

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    The evolution of solid-state circuit technology has a long history within a relatively short period of time. This technology has lead to the modern information society that connects us and tools, a large market, and many types of products and applications. The solid-state circuit technology continuously evolves via breakthroughs and improvements every year. This book is devoted to review and present novel approaches for some of the main issues involved in this exciting and vigorous technology. The book is composed of 22 chapters, written by authors coming from 30 different institutions located in 12 different countries throughout the Americas, Asia and Europe. Thus, reflecting the wide international contribution to the book. The broad range of subjects presented in the book offers a general overview of the main issues in modern solid-state circuit technology. Furthermore, the book offers an in depth analysis on specific subjects for specialists. We believe the book is of great scientific and educational value for many readers. I am profoundly indebted to the support provided by all of those involved in the work. First and foremost I would like to acknowledge and thank the authors who worked hard and generously agreed to share their results and knowledge. Second I would like to express my gratitude to the Intech team that invited me to edit the book and give me their full support and a fruitful experience while working together to combine this book

    High Temperature Electronics Design for Aero Engine Controls and Health Monitoring

    Get PDF
    There is a growing desire to install electronic power and control systems in high temperature harsh environments to improve the accuracy of critical measurements, reduce the amount of cabling and to eliminate cooling systems. Typical target applications include electronics for energy exploration, power generation and control systems. Technical topics presented in this book include:‱ High temperature electronics market‱ High temperature devices, materials and assembly processes‱ Design, manufacture and testing of multi-sensor data acquisition system for aero-engine control‱ Future applications for high temperature electronicsHigh Temperature Electronics Design for Aero Engine Controls and Health Monitoring contains details of state of the art design and manufacture of electronics targeted towards a high temperature aero-engine application. High Temperature Electronics Design for Aero Engine Controls and Health Monitoring is ideal for design, manufacturing and test personnel in the aerospace and other harsh environment industries as well as academic staff and master/research students in electronics engineering, materials science and aerospace engineering

    Design and Characterization of 64K Pixels Chips Working in Single Photon Processing Mode

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    Progress in CMOS technology and in fine pitch bump bonding has made possible the development of high granularity single photon counting detectors for X-ray imaging. This thesis studies the design and characterization of three pulse processing chips with 65536 square pixels of 55 ”m x 55 ”m designed in a commercial 0.25 ”m 6-metal CMOS technology. The 3 chips share the same architecture and dimensions and are named Medipix2, Mpix2MXR20 and Timepix. The Medipix2 chip is a pixel detector readout chip consisting of 256 x 256 identical elements, each working in single photon counting mode for positive or negative input charge signals. The preamplifier feedback provides compensation for detector leakage current on a pixel by pixel basis. Two identical pulse height discriminators are used to define an energy window. Every event falling inside the energy window is counted with a 13 bit pseudo-random counter. The counter logic, based in a shift register, also behaves as the input/output register for the pixel. Each cell also has an 8-bit configuration register which allows masking, test-enabling and 3-bit individual threshold adjust for each discriminator. The chip can be configured in serial mode and readout either serially or in parallel. Measurements show an electronic noise ~160 e- rms with a gain of ~9 mV/ke-. The threshold spread after equalization of ~120 e- rms brings the full chip minimum detectable charge to ~1100 e-. The analog static power consumption is ~8 ”W per pixel with Vdda=2.2 V. The Mpix2MXR20 is an upgraded version of the Medipix2. The main changes in the pixel consist of: an improved tolerance to radiation, improved pixel to pixel threshold uniformity, and a 14-bit counter with overflow control. The chip periphery includes new threshold DACs with smaller step size, improved linearity, and better temperature dependence. Timepix is an evolution of the Mpix2MXR20 which provides independently in each pixel information of arrival time, time-over-threshold or event counting. Timepix uses as a time reference an external clock (Ref_Clk) up to 100 MHz which is distributed all over the pixel matrix during acquisition mode. The preamplifier is improved and there is a single discriminator with 4-bit threshold adjustment in order to reduce the minimum detectable charge limit. Measurements show an electrical noise ~100 e- rms and a gain of ~16.5 mV/ke-. The threshold spread after equalization of ~35 e- rms brings the full chip minimum detectable charge either to ~650 e- with a naked chip (i.e. gas detectors) or ~750 e- when bump-bonded to a detector. The pixel static power consumption is ~13.5 ”W per pixel with Vdda=2.2 V and Ref_Clk=80 MHz. This family of chips have been used for a wide variety of applications. During these studies a number of limitations have come to light. Among those are limited energy resolution and surface area. Future developments, such as Medipix3, will aim to address those limitations by carefully exploiting developments in microelectronics

    High Aspect-ratio Biomimetic Hair-like Microstructure Arrays for MEMS Multi-Transducer Platform

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    Many emerging applications of sensing microsystems in health care, environment, security and transportation systems require improved sensitivity and selectivity, redundancy, robustness, increased dynamic range, as well as small size, low power and low cost. Providing all of these features in a system consisting of one sensor is not practical or possible. Micro electro mechanical microsystems (MEMS) that combine a large sensor array with signal processing circuits could provide these features. To build such multi-transducer microsystems we get inspiration from “hair”, a structure frequently used in nature. Hair is a simple yet elegant structure that offers many attractive features such as large length to cross-sectional area ratio, large exposed surface area, ability to include different sensing materials, and ability to interact with surrounding media in sophisticated ways. In this thesis, we have developed a microfabrication technology to build 3D biomimetic hair structures for MEMS multi-transducer platform. Direct integration with CMOS will enable signal processing of dense arrays of 100s or 1000s of MEMS transducers within a small chip area. We have developed a new device structure that mimics biological hair. It includes a vertical spring, a proof-mass atop the spring, and high aspect-ratio narrow electrostatic gaps to adjacent electrodes for sensing and actuation. Based on this structure, we have developed three generations of 3D high aspect-ratio, small-footprint, low-noise accelerometers. Arrays of both high-sensitivity capacitive and threshold accelerometers are designed and tested, and they demonstrate extended full-scale detection range and frequency bandwidth. The first-generation capacitive hair accelerometer arrays are based on Silicon-on-Glass (SOG) process utilizing 500 ”m thick silicon, achieving a highest sensor density of ~100 sensors/mm2 connected in parallel. Minimum capacitive gap is 5â€ŻÎŒm with device height of 400â€ŻÎŒm and spring length of 300â€ŻÎŒm. A custom-designed Bosch deep-reactive-etching (DRIE) process is developed to etch ultra-deep (> 500 ”m) ultra-high aspect-ratio (UHAR) features (AR > 40) with straight sidewalls and reduced undercut across a wide range of feature sizes. A two-gap dry-release process is developed for the second-generation capacitive hair accelerometers. Due to the large device height at full wafer thickness of 1 mm and UHAR capacitive transduction gaps at 2 ”m that extend > 200 ”m, the accelerometer achieves sub-”g resolution (< 1”g/√Hz) and high sensitivity (1pF/g/mm2), having an area smaller than any previous precision accelerometers with similar performance. Each sensor chip consists of devices with various design parameter to cover a wide range. Bonding with metal interlayers at < 400 °C allows direct integration of these devices on top of CMOS circuits. The third-generation digital threshold hair accelerometer takes advantage of large aspect-ratio of the hair structure and UHAR DRIE structures to provide low noise (< 600 ng/√Hz per mm2 footprint proof-mass due to small contact area) and low power threshold acceleration detection. 16-element (4-bit) and 32-element (5-bit) arrays of threshold devices (total chip area being < 1 cm2) with evenly-spaced threshold gap dimensions from 1 ”m to 4 ”m as well as with hair spring cross-sectional area from 102 ”m to 302 ”m are designed to suit specific g-ranges from < 100 mg to 50 g. This hair sensor and sensor array technology is suited for forming MEMS transducer arrays with circuits, including high performance IMUs as well as miniaturized detectors and actuators that require high temporal and spatial resolution, analogous to high-density CMOS imagers.PHDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttps://deepblue.lib.umich.edu/bitstream/2027.42/143975/1/yemin_1.pd

    Detector Technologies for CLIC

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    The Compact Linear Collider (CLIC) is a high-energy high-luminosity linear electron-positron collider under development. It is foreseen to be built and operated in three stages, at centre-of-mass energies of 380 GeV, 1.5 TeV and 3 TeV, respectively. It offers a rich physics program including direct searches as well as the probing of new physics through a broad set of precision measurements of Standard Model processes, particularly in the Higgs-boson and top-quark sectors. The precision required for such measurements and the specific conditions imposed by the beam dimensions and time structure put strict requirements on the detector design and technology. This includes low-mass vertexing and tracking systems with small cells, highly granular imaging calorimeters, as well as a precise hit-time resolution and power-pulsed operation for all subsystems. A conceptual design for the CLIC detector system was published in 2012. Since then, ambitious R&D programmes for silicon vertex and tracking detectors, as well as for calorimeters have been pursued within the CLICdp, CALICE and FCAL collaborations, addressing the challenging detector requirements with innovative technologies. This report introduces the experimental environment and detector requirements at CLIC and reviews the current status and future plans for detector technology R&D.Comment: 152 pages, 116 figures; published as CERN Yellow Report Monograph Vol. 1/2019; corresponding editors: Dominik Dannheim, Katja Kr\"uger, Aharon Levy, Andreas N\"urnberg, Eva Sickin

    Thin-film Lithium Niobate Photonics for Electro-optics, Nonlinear Optics, and Quantum Optics on Silicon

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    Ion-sliced thin-film lithium niobate (LN) compact waveguide technology has facilitated the resurgence of integrated photonics based on lithium niobate. These thin-film LN waveguides offer over an order of magnitude improvement in optical confinement, and about two orders of magnitude reduction in waveguide bending radius, compared to conventional LN waveguides. Harnessing the improved confinement, a variety of miniaturized and efficient photonic devices are demonstrated in this work. First, two types of compact electrooptic modulators are presented – microring modulators, and Mach-Zehnder modulators. Next, two distinct approaches to nonlinear optical frequency converters are implemented – periodically poled lithium niobate, and mode shape modulation (grating assisted quasi-phase matching). Following this, stochastic variations are added to the mode shape modulation approach to demonstrate random quasi-phase matching. Afterward, broadband photon-pair generation is demonstrated in the miniaturized periodically poled lithium niobate, and spectral correlations of the biphoton spectrum are reported. Finally, extensions of the aforementioned results suitable for future work are discussed
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