Millimeter Wave Traveling Wave Tubes for the 21st Century

Traveling wave tubes are rapidly evolving to provide unprecedented power level in comparison to solid state devices in the millimeter waves region of the spectrum (80 – 300 GHz) thus enabling a wide range of applications. Wireless communications, imaging, security, plasma diagnostics, healthcare and many others will gain substantial features if high power in the millimeter wave region would be available from compact sources. The development of fabrication technologies is proving crucial for introducing new topologies and structures for millimeter wave vacuum electronic devices, compatible with the dimensions dictated by the short wavelength that poses substantial challenges due to tight tolerances and surface quality. This review paper will provide an overview of the principles, evolution and state of the art of one of the most widely utilized vacuum electronic devices, the traveling wave tube (TWT). The wide band, high gain features of TWTs make those devices the most promising solutions for high power at millimeter waves and THz frequencies

Millimeter wave wireless system based on point to multipoint transmissions

The continuously growing traffic demand has motivated the exploration of underutilized millimeter wave frequency spectrum for future mobile broadband communication networks. Research activities focus mainly on the use of the V-band (59 - 64 GHz) and E-band (71 - 76 & 81 - 84 GHz) to offer multi-gigabit point to point transmissions. This paper describes an innovative W-band (92-95 GHz) point to multipoint wireless network for high capacity access and backhaul applications. Point to multipoint wireless networks suffer from limited RF power available. The proposed network is based on a high power, wide band traveling wave tube of new generation and an affordable high performance transceiver. These new devices enable a new transmission paradigm and overcome the relevant technological challenges imposed by the high atmosphere attenuation and the presently lack of power amplification required to provide adequate coverage at millimeter waves

US Navy superconductivity program

Both the new high temperature superconductors (HTS) and the low temperature superconductors (LTS) are important components of the Navy's total plan to integrate superconductivity into field operational systems. Fundamental research is an important component of the total Navy program and focuses on the HTS materials. Power applications (ship propulsion) use LTS materials while space applications (millimeter wave electronics) use HTS materials. The Space Experiment to be conducted at NRL will involve space flight testing of HTS devices built by industry and will demonstrate the ability to engineer and space qualify these devices for systems use. Another important component of the Navy's effort is the development of Superconducting Quantum Interference Device (SQUID) magnetometers. This program will use LTS materials initially, but plans to implement HTS materials as soon as possible. Hybrid HTS/LTS systems are probable in many applications. A review of the status of the Navy's HTS materials research is given as well as an update on the Navy's development efforts in superconductivity

A millimeter-wave microstrip antenna array on ultra-flexible micromachined polydimethylsiloxane (PDMS) polymer

The use of Polydimethylsiloxane (PDMS), an ultra flexible polymer, as a substrate for the realization of reconfigurable microwave devices in the 60-GHz band is presented. As bulk PDMS is demonstrated to be lossy at millimeter waves, membrane-supported devices are considered. A new reliable and robust technological process has been developped to micromachine membrane-supported transmission lines and microstrip antenna arrays. It is shown that transmission lines printed on 20-µm thick membranes exhibit similar performances as bulk substrates commonly used at millimeter-wave frequencies. A microstrip antenna array has been also designed and fabricated to demonstrate the feasibility of directive antennas supported by large membranes. Promising applications for mechanical beam-steering, beam forming and frequency tunable antennas are expected

Novel modulated antennas and probes for millimeter wave imaging applications

Microwave and millimeter wave (300 MHz - 300 GHz) imaging techniques have shown great potential for a wide range of industrial and medical applications. These techniques are fundamentally based on measuring relative and coherent electromagnetic fields distributions, e.g., electric fields, around the object to be imaged. Various imaging systems can be devised for measuring relative electric field distributions; each with it own advantages and limitations. This dissertation is focused on addressing critical challenges related to the practical implementation of various microwave and millimeter wave imaging systems. Specifically, this research is meant to achieve three main objectives related to designing efficient modulated imaging methods/array elements, reducing the sensitivity to standoff distance variations in near-field imaging, and designing a simple and accurate vector network analyzer (VNA) for in-situ imaging applications. The concept of modulating millimeter wave antenna and scatterer structures, directly to increase the overall system sensitivity and reduce the image acquisition time, is central to the development presented herein. To improve upon the conventional modulated scatterer technique (MST) based on dipole scatterers; a new multiple loaded scatterer (MLS) method and novel loaded elliptical slot are introduced and analyzed. A unique near-field differential probe based on dual-loaded modulated single waveguide aperture is developed to compensate for and reduce the effect of standoff distance variations in near-field imaging. Finally, a novel vector network analyzer (VNA) design is introduced to meet the rising need for in-situ vector measuring devices. To realize a robust handheld millimeter wave VNA, a custom-designed waveguide phase shifter based on sub-resonant loaded slots is introduced. The proposed MLS method, modulated elliptical slot, dual-loaded modulated aperture probe, and VNA are thoroughly investigated and their efficacy for microwave and millimeter wave imaging is demonstrated --Abstract, page iii

Comments on “Ka-Band Coplanar Magic-T Based on Gap Waveguide Technology”

In the title paper, the author proposes a Ka-Band Coplanar Magic-T Based on Gap-Waveguide (GW) Technology. The major novelty claimed in the paper is the combination of ridge-gap and E-plane groove-gap waveguides for Ka-band applications. However, such combination of these two types of waveguides in GW technology was firstly proposed in 2017. This combination allows for the realization of numerous devices, and distribution networks in the millimeter-wave band. This comment aims to properly frame the evolution of the use of RGW-GGW networks and how their use can be useful for new mm-wave band devices. While the author’s Magic-T introduces a new feature by using a 4-port network, it is clear that the concept relies on previous ideas not mentioned in the manuscript and this can lead to confusion about its actual novel contributions. In addition, we intend to give the microwave community a proper perspective of the above work’s frame of reference

Submillimeter-wave InP Gunn devices

Recent advances in design and technology signifi- cantly improved the performance of low-noise InP Gunn devices in oscillators first at -band (110–170 GHz) and then at -band (75–110 GHz) frequencies. More importantly, they next resulted in orders of magnitude higher RF output power levels above -band and operation in a second harmonic mode up to at least 325 GHz. Examples of the state-of-the-art performance are continuous-wave RF power levels of more than 30 mW at 193 GHz, more than 3.5 mW at 300 GHz, and more than 2 mW at 315 GHz. The dc power requirements of these oscillators compare favorably with those of RF sources driving frequency multiplier chains to reach the same output RF power levels and frequencies. Two different types of doping profiles, a graded profile and one with a doping notch at the cathode, are prime candidates for operation at submillimeter- wave frequencies. Generation of significant RF power levels from InP Gunn devices with these optimized doping profiles is predicted up to at least 500 GHz and the performance predictions for the two different types of doping profiles are compared