Classification of Human Retinal Microaneurysms Using Adaptive Optics Scanning Light Ophthalmoscope Fluorescein Angiography

Purpose. Microaneurysms (MAs) are considered a hallmark of retinal vascular disease, yet what little is known about them is mostly based upon histology, not clinical observation. Here, we use the recently developed adaptive optics scanning light ophthalmoscope (AOSLO) fluorescein angiography (FA) to image human MAs in vivo and to expand on previously described MA morphologic classification schemes. Methods. Patients with vascular retinopathies (diabetic, hypertensive, and branch and central retinal vein occlusion) were imaged with reflectance AOSLO and AOSLO FA. Ninety-three MAs, from 14 eyes, were imaged and classified according to appearance into six morphologic groups: focal bulge, saccular, fusiform, mixed, pedunculated, and irregular. The MA perimeter, area, and feret maximum and minimum were correlated to morphology and retinal pathology. Select MAs were imaged longitudinally in two eyes. Results. Adaptive optics scanning light ophthalmoscope fluorescein angiography imaging revealed microscopic features of MAs not appreciated on conventional images. Saccular MAs were most prevalent (47%). No association was found between the type of retinal pathology and MA morphology (P = 0.44). Pedunculated and irregular MAs were among the largest MAs with average areas of 4188 and 4116 μm2, respectively. Focal hypofluorescent regions were noted in 30% of MAs and were more likely to be associated with larger MAs (3086 vs. 1448 μm2, P = 0.0001). Conclusions. Retinal MAs can be classified in vivo into six different morphologic types, according to the geometry of their two-dimensional (2D) en face view. Adaptive optics scanning light ophthalmoscope fluorescein angiography imaging of MAs offers the possibility of studying microvascular change on a histologic scale, which may help our understanding of disease progression and treatment response

A Framework for Computing Finite SLD Trees

The search space of SLD resolution, usually represented by means of a so-called SLD tree, is often infinite. However, there are many applications that must deal with possibly infinite SLD trees, like partial evaluation or some static analyses. In this context, being able to construct a finite representation of an infinite SLD tree becomes useful. In this work, we introduce a framework to construct a finite data structure representing the (possibly infinite) SLD derivations for a goal. This data structure, called closed SLD tree, is built using four basic operations: unfolding, flattening, splitting, and subsumption. We prove some basic properties for closed SLD trees, namely that both computed answers and calls are preserved. We present a couple of simple strategies for constructing closed SLD trees with different levels of abstraction, together with some examples of its application. Finally, we illustrate the viability of our approach by introducing a test case generator based on exploring closed SLD trees.This work has been partially supported by the EU (FEDER) and the Spanish Ministerio de Economia y Competitividad (Secretaria de Estado de Investigacion, Desarrollo e Innovacion) under grant TIN2013-44742-C4-1-R and by the Generalitat Valenciana under grant PROMETEO/2011/052.Nishid, N.; Vidal Oriola, GF. (2015). A Framework for Computing Finite SLD Trees. Journal of Logical and Algebraic Methods in Programming. 84(2):197-217. https://doi.org/10.1016/j.jlamp.2014.11.006S19721784

Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon

In this paper, we report monolithically integrated IIIV quantum dot (QD) light-emitting sources on silicon substrates for silicon photonics. We describe the first practical InAs/GaAs QD lasers monolithically grown on an offcut silicon (001) substrate due to the realization of high quality III-V epilayers on silicon with low defect density, indicating that the large material dissimilarity between III-Vs and silicon is no longer a fundamental barrier limiting monolithic growth of III-V lasers on Si substrates. Although the use of offcut silicon substrates overcomes the antiphase boundary (APB) problem, it has the disadvantage of not being readily compatible with standard microelectronics fabrication, where wafers with on-axis silicon (001) substrates are used. We therefore report, to the best of our knowledge, the first electrically pumped continuous-wave (c.w.) InAs/GaAs QD lasers fabricated on on-axis GaAs/Si (001) substrates without any intermediate buffer layers. Based on the achievements described above, we move on to report the first study of post-fabrication and prototyping of various Si-based light emitting sources by utilizing the focused ion beam (FIB) technique, with the intention of expediting the progress toward large-scale and low-cost photonic integrated circuits monolithically integrated on a silicon platform. We compare two Si-based QD lasers with as-cleaved and FIB-made facets, and prove that FIB is a powerful tool to fabricate integrated lasers on silicon substrates. Using angled facet structures, which effectively reduce facet reflectivity, we demonstrate Si-based InAs/GaAs QD superluminescent light emitting diodes (SLDs) operating under c.w. conditions at room temperature for the first time. The work described represents significant advances towards the realization of a comprehensive silicon photonics technology

Conflict within Special Education for Mothers of Children with Invisible Disabilities: A Case Study

In the United States, children with disabilities receive special education services under the Individuals with Disabilities Education Act (IDEA), which provides free appropriate public education (FAPE) in the least restrictive environment (LRE). Evidence shows that parents of children who receive special education (SPED) experience conflict within the school system. Invisible disabilities (NVD) are unseen but affect learning or behavior in school, include attention deficit hyperactivity disorder and learning disabilities, are eligible for special education. There is evidence that parents of children with NVD experience conflict while accessing the system and receiving services and mothers are often the primary advocate for SPED services for their child. What is not fully understood is how NVD influences the conflict process and influences the experiences for mothers. This study explored the experience of mothers of children with NVD who experienced conflict in the special education system using a qualitative case study methodology. Interviews and Kawa River Model drawings of the conflict experiences provided insight into the conflict experience, using Deutsch’s model of conflict as the primary theoretical framework. The findings included the following themes: Square Peg in a Round Hole, Bear the Brunt, Adding Insult to Injury, Game Changer, and Sea Change. Key findings include NVD-related conflicts involve identification and eligibility, the conflict experiences evolve from intrapersonal, interpersonal, and structural level conflicts, which influence their advocacy, and the paradoxical experience of being both a professional in the workplace and a mother advocating for her child in special education, and how that influences conflict