The Future of High Frequency Circuit Design

The cut-off wavelengths of integrated silicon transistors have exceeded the die sizes of the chips being fabricated with them. Combined with the ability to integrate billions of transistors on the same die, this size-wavelength cross-over has produced a unique opportunity for a completely new class of holistic circuit design combining electromagnetics, device physics, circuits, and communication system theory in one place. In this paper, we discuss some of these opportunities and their associated challenges in greater detail and provide a few of examples of how they can be used in practice

(Invited) mm-wave silicon ICs: An opportunity for holistic design

Millimeter-waves integrated circuits offer a unique opportunity for a holistic design approach encompassing RF, analog, and digital, as well as radiation and electromagnetics. The ability to deal with the complete system from the digital circuitry to on-chip antennas and everything in between offers unparalleled opportunities for completely new architectures and topologies, previously impossible due the traditional partitioning of various blocks in conventional design. This opens a plethora of new architectural and system level innovation within the integrated circuit platform. This paper reviews some of the challenges and opportunities for mm-wave ICs and presents several solutions to them

A Fully-Integrated Reconfigurable Dual-Band Transceiver for Short Range Wireless Communications in 180 nm CMOS

© 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.A fully-integrated reconfigurable dual-band (760-960 MHz and 2.4-2.5 GHz) transceiver (TRX) for short range wireless communications is presented. The TRX consists of two individually-optimized RF front-ends for each band and one shared power-scalable analog baseband. The sub-GHz receiver has achieved the maximum 75 dBc 3rd-order harmonic rejection ratio (HRR3) by inserting a Q-enhanced notch filtering RF amplifier (RFA). In 2.4 GHz band, a single-ended-to-differential RFA with gain/phase imbalance compensation is proposed in the receiver. A ΣΔ fractional-N PLL frequency synthesizer with two switchable Class-C VCOs is employed to provide the LOs. Moreover, the integrated multi-mode PAs achieve the output P1dB (OP1dB) of 16.3 dBm and 14.1 dBm with both 25% PAE for sub-GHz and 2.4 GHz bands, respectively. A power-control loop is proposed to detect the input signal PAPR in real-time and flexibly reconfigure the PA's operation modes to enhance the back-off efficiency. With this proposed technique, the PAE of the sub-GHz PA is improved by x3.24 and x1.41 at 9 dB and 3 dB back-off powers, respectively, and the PAE of the 2.4 GHz PA is improved by x2.17 at 6 dB back-off power. The presented transceiver has achieved comparable or even better performance in terms of noise figure, HRR, OP1dB and power efficiency compared with the state-of-the-art.Peer reviewe

Communication channel analysis and real time compressed sensing for high density neural recording devices

Next generation neural recording and Brain- Machine Interface (BMI) devices call for high density or distributed systems with more than 1000 recording sites. As the recording site density grows, the device generates data on the scale of several hundred megabits per second (Mbps). Transmitting such large amounts of data induces significant power consumption and heat dissipation for the implanted electronics. Facing these constraints, efficient on-chip compression techniques become essential to the reduction of implanted systems power consumption. This paper analyzes the communication channel constraints for high density neural recording devices. This paper then quantifies the improvement on communication channel using efficient on-chip compression methods. Finally, This paper describes a Compressed Sensing (CS) based system that can reduce the data rate by > 10x times while using power on the order of a few hundred nW per recording channel

Integrated phased array systems in silicon

Silicon offers a new set of possibilities and challenges for RF, microwave, and millimeter-wave applications. While the high cutoff frequencies of the SiGe heterojunction bipolar transistors and the ever-shrinking feature sizes of MOSFETs hold a lot of promise, new design techniques need to be devised to deal with the realities of these technologies, such as low breakdown voltages, lossy substrates, low-Q passives, long interconnect parasitics, and high-frequency coupling issues. As an example of complete system integration in silicon, this paper presents the first fully integrated 24-GHz eight-element phased array receiver in 0.18-μm silicon-germanium and the first fully integrated 24-GHz four-element phased array transmitter with integrated power amplifiers in 0.18-μm CMOS. The transmitter and receiver are capable of beam forming and can be used for communication, ranging, positioning, and sensing applications

Digital implementation of the cellular sensor-computers

Two different kinds of cellular sensor-processor architectures are used nowadays in various applications. The first is the traditional sensor-processor architecture, where the sensor and the processor arrays are mapped into each other. The second is the foveal architecture, in which a small active fovea is navigating in a large sensor array. This second architecture is introduced and compared here. Both of these architectures can be implemented with analog and digital processor arrays. The efficiency of the different implementation types, depending on the used CMOS technology, is analyzed. It turned out, that the finer the technology is, the better to use digital implementation rather than analog

Analog/RF Circuit Design Techniques for Nanometerscale IC Technologies

CMOS evolution introduces several problems in analog design. Gate-leakage mismatch exceeds conventional matching tolerances requiring active cancellation techniques or alternative architectures. One strategy to deal with the use of lower supply voltages is to operate critical parts at higher supply voltages, by exploiting combinations of thin- and thick-oxide transistors. Alternatively, low voltage circuit techniques are successfully developed. In order to benefit from nanometer scale CMOS technology, more functionality is shifted to the digital domain, including parts of the RF circuits. At the same time, analog control for digital and digital control for analog emerges to deal with current and upcoming imperfections

Advances on CMOS image sensors

This paper offers an introduction to the technological advances of image sensors designed using complementary metal–oxide–semiconductor (CMOS) processes along the last decades. We review some of those technological advances and examine potential disruptive growth directions for CMOS image sensors and proposed ways to achieve them. Those advances include breakthroughs on image quality such as resolution, capture speed, light sensitivity and color detection and advances on the computational imaging. The current trend is to push the innovation efforts even further as the market requires higher resolution, higher speed, lower power consumption and, mainly, lower cost sensors. Although CMOS image sensors are currently used in several different applications from consumer to defense to medical diagnosis, product differentiation is becoming both a requirement and a difficult goal for any image sensor manufacturer. The unique properties of CMOS process allows the integration of several signal processing techniques and are driving the impressive advancement of the computational imaging. With this paper, we offer a very comprehensive review of methods, techniques, designs and fabrication of CMOS image sensors that have impacted or might will impact the images sensor applications and markets

Distributed Integrated Circuits: An Alternative Approach to High-Frequency Design

Distributed integrated circuits are presented as a methodology to design high-frequency communication building blocks. Distributed circuits operate based on multiple parallel signal paths working in synchronization that can be used to enhance the frequency of operation, combine power, and enhance the robustness of the design. These multiple signal paths usually result in strong couplings inside the circuit that necessitate a treatment spanning architecture, circuits, devices, and electromagnetic levels of abstraction