Inorganic micro/nanostructures-based high-performance flexible electronics for electronic skin application

Electronics in the future will be printed on diverse substrates, benefiting several emerging applications such as electronic skin (e-skin) for robotics/prosthetics, flexible displays, flexible/conformable biosensors, large area electronics, and implantable devices. For such applications, electronics based on inorganic micro/nanostructures (IMNSs) from high mobility materials such as single crystal silicon and compound semiconductors in the form of ultrathin chips, membranes, nanoribbons (NRs), nanowires (NWs) etc., offer promising high-performance solutions compared to conventional organic materials. This thesis presents an investigation of the various forms of IMNSs for high-performance electronics. Active components (from Silicon) and sensor components (from indium tin oxide (ITO), vanadium pentaoxide (V2O5), and zinc oxide (ZnO)) were realised based on the IMNS for application in artificial tactile skin for prosthetics/robotics. Inspired by human tactile sensing, a capacitive-piezoelectric tandem architecture was realised with indium tin oxide (ITO) on a flexible polymer sheet for achieving static (upto 0.25 kPa-1 sensitivity) and dynamic (2.28 kPa-1 sensitivity) tactile sensing. These passive tactile sensors were interfaced in extended gate mode with flexible high-performance metal oxide semiconductor field effect transistors (MOSFETs) fabricated through a scalable process. The developed process enabled wafer scale transfer of ultrathin chips (UTCs) of silicon with various devices (ultrathin chip resistive samples, metal oxide semiconductor (MOS) capacitors and n‐channel MOSFETs) on flexible substrates up to 4″ diameter. The devices were capable of bending upto 1.437 mm radius of curvature and exhibited surface mobility above 330 cm2/V-s, on-to-off current ratios above 4.32 decades, and a subthreshold slope above 0.98 V/decade, under various bending conditions. While UTCs are useful for realizing high-density high-performance micro-electronics on small areas, high-performance electronics on large area flexible substrates along with low-cost fabrication techniques are also important for realizing e-skin. In this regard, two other IMNS forms are investigated in this thesis, namely, NWs and NRs. The controlled selective source/drain doping needed to obtain transistors from such structure remains a bottleneck during post transfer printing. An attractive solution to address this challenge based on junctionless FETs (JLFETs), is investigated in this thesis via technology computer-aided design (TCAD) simulation and practical fabrication. The TCAD optimization implies a current of 3.36 mA for a 15 μm channel length, 40 μm channel width with an on-to-off ratio of 4.02x 107. Similar to the NRs, NWs are also suitable for realizing high performance e-skin. NWs of various sizes, distribution and length have been fabricated using various nano-patterning methods followed by metal assisted chemical etching (MACE). Synthesis of Si NWs of diameter as low as 10 nm and of aspect ratio more than 200:1 was achieved. Apart from Si NWs, V2O5 and ZnO NWs were also explored for sensor applications. Two approaches were investigated for printing NWs on flexible substrates namely (i) contact printing and (ii) large-area dielectrophoresis (DEP) assisted transfer printing. Both approaches were used to realize electronic layers with high NW density. The former approach resulted in 7 NWs/μm for bottom-up ZnO and 3 NWs/μm for top-down Si NWs while the latter approach resulted in 7 NWs/μm with simultaneous assembly on 30x30 electrode patterns in a 3 cm x 3 cm area. The contact-printing system was used to fabricate ZnO and Si NW-based ultraviolet (UV) photodetectors (PDs) with a Wheatstone bridge (WB) configuration. The assembled V2O5 NWs were used to realize temperature sensors with sensitivity of 0.03% /K. The sensor arrays are suitable for tactile e-skin application. While the above focuses on realizing conventional sensing and addressing elements for e-skin, processing of a large amount of data from e-skin has remained a challenge, especially in the case of large area skin. A Neural NW Field Effect Transistors (υ-NWFETs) based hardware-implementable neural network (HNN) approach for tactile data processing in e-skin is presented in the final part of this thesis. The concept is evaluated by interfacing with a fabricated kirigami-inspired e-skin. Apart from e-skin for prosthetics and robotics, the presented research will also be useful for obtaining high performance flexible circuits needed in many futuristic flexible electronics applications such as smart surgical tools, biosensors, implantable electronics/electroceuticals and flexible mobile phones

Nanowire FET based neural element for robotic tactile sensing skin

This paper presents novel Neural Nanowire Field Effect Transistors (υ-NWFETs) based hardware-implementable neural network (HNN) approach for tactile data processing in electronic skin (e-skin). The viability of Si nanowires (NWs) as the active material for υ-NWFETs in HNN is explored through modeling and demonstrated by fabricating the first device. Using υ-NWFETs to realize HNNs is an interesting approach as by printing NWs on large area flexible substrates it will be possible to develop a bendable tactile skin with distributed neural elements (for local data processing, as in biological skin) in the backplane. The modeling and simulation of υ-NWFET based devices show that the overlapping areas between individual gates and the floating gate determines the initial synaptic weights of the neural network - thus validating the working of υ-NWFETs as the building block for HNN. The simulation has been further extended to υ-NWFET based circuits and neuronal computation system and this has been validated by interfacing it with a transparent tactile skin prototype (comprising of 6 × 6 ITO based capacitive tactile sensors array) integrated on the palm of a 3D printed robotic hand. In this regard, a tactile data coding system is presented to detect touch gesture and the direction of touch. Following these simulation studies, a four-gated υ-NWFET is fabricated with Pt/Ti metal stack for gates, source and drain, Ni floating gate, and Al2O3 high-k dielectric layer. The current-voltage characteristics of fabricated υ-NWFET devices confirm the dependence of turn-off voltages on the (synaptic) weight of each gate. The presented υ-NWFET approach is promising for a neuro-robotic tactile sensory system with distributed computing as well as numerous futuristic applications such as prosthetics, and electroceuticals

Low Power Multi-Channel Interface for Charge Based Tactile Sensors

Analog front end electronics are designed in 65 nm CMOS technology to process charge pulses arriving from a tactile sensor array. This is accomplished through the use of charge sensitive amplifiers and discrete time filters with tunable clock signals located in each of the analog front ends. Sensors were emulated using Gaussian pulses during simulation. The digital side of the system uses SAR (successive approximation register) ADCs for sampling of the processed sensor signals. Adviser: Sina Balkı

Recent progress in piezotronic sensors based on one-dimensional zinc oxide nanostructures and its regularly ordered arrays: from design to application

Piezotronic sensors and self-powered gadgets are highly sought-after for flexible, wearable, and intelligent electronics for their applications in cutting-edge healthcare and human-machine interfaces. With the advantages of a well-known piezoelectric effect, excellent mechanical properties, and emerging nanotechnology applications, one-dimensional (1D) ZnO nanostructures organized in the form of a regular array have been regarded as one of the most promising inorganic active materials for piezotronics. This report intends to review the recent developments of 1D ZnO nanostructure arrays for multifunctional piezotronic sensors. Prior to discussing rational design and fabrication approaches for piezotronic devices in precisely controlled dimensions, well-established synthesis methods for high-quality and well-controlled 1D ZnO nanostructures are addressed. The challenges associated with the well-aligned, site-specific synthesis of 1D ZnO nanostructures, development trends of piezotronic devices, advantages of an ordered array of 1D ZnO in device performances, exploring new sensing mechanisms, incorporating new functionalities by constructing heterostructures, the development of novel flexible device integration technology, the deployment of novel synergistic strategies in piezotronic device performances, and potential multifunctional applications are covered. A brief evaluation of the end products, such as small-scale miniaturized unconventional power sources in sensors, high-resolution image sensors, and personalized healthcare medical devices, is also included. The paper is summarized towards the conclusion by outlining the present difficulties and promising future directions. This study will provide guidance for future research directions in 1D ZnO nanostructure-based piezotronics, which will hasten the development of multifunctional devices, sensors, chips for human-machine interfaces, displays, and self-powered systems

Ultra-thin chips for high-performance flexible electronics

Flexible electronics has significantly advanced over the last few years, as devices and circuits from nanoscale structures to printed thin films have started to appear. Simultaneously, the demand for high-performance electronics has also increased because flexible and compact integrated circuits are needed to obtain fully flexible electronic systems. It is challenging to obtain flexible and compact integrated circuits as the silicon based CMOS electronics, which is currently the industry standard for high-performance, is planar and the brittle nature of silicon makes bendability difficult. For this reason, the ultra-thin chips from silicon is gaining interest. This review provides an in-depth analysis of various approaches for obtaining ultra-thin chips from rigid silicon wafer. The comprehensive study presented here includes analysis of ultra-thin chips properties such as the electrical, thermal, optical and mechanical properties, stress modelling, and packaging techniques. The underpinning advances in areas such as sensing, computing, data storage, and energy have been discussed along with several emerging applications (e.g., wearable systems, m-Health, smart cities and Internet of Things etc.) they will enable. This paper is targeted to the readers working in the field of integrated circuits on thin and bendable silicon; but it can be of broad interest to everyone working in the field of flexible electronics

Layer by layer printing of nanomaterials for large-area, flexible electronics

Large-area electronics, including printable and flexible electronics, is an emerging concept which aims to develop electronic components in a cheaper and faster manner, especially on those non-conventional substrates. Being flexible and deformable, this new form of electronics is regarded to hold great promises for various futuristic applications including the internet of things, virtual reality, healthcare monitoring, prosthetics and robotics. However, at present, large-area electronics is still nowhere near the commercialisation stage, which is due to several problems associated with performance, uniformity and reliability, etc. Moreover, although the device’s density is not the major concern in printed electronics, there is still a merit in further increasing the total number of devices in a limited area, in order to achieve more electronic blocks, higher performance and multiple functionalities. In this context, this Ph.D. thesis focuses on the printing of various nanomaterials for the realisation of high-performance, flexible and large-area electronics. Several aspects have been covered in this thesis, including the printing dynamics of quasi-1D NWs, the contact problem in device realisation and the strategy to achieve sequential integration (3D integration) of the as-printed devices, both on rigid and flexible substrates. Promisingly, some of the devices based on the printed nanomaterial show a comparable performance to the state-of-the-art technology. With the demonstrated 3D integration strategy, a highly dense array of electronic devices can be potentially achieved by printing method. This thesis also touches on the problem associated with the circuit and system realisation. Specifically, graphene-based logic gates and NW based UV sensing circuit has been discussed, which shows the promising applications of nanomaterial-based electronics. Future work will be focusing on extending the UV sensing circuit to an active matrix sensor array

2022 roadmap on neuromorphic computing and engineering

Modern computation based on von Neumann architecture is now a mature cutting-edge science. In the von Neumann architecture, processing and memory units are implemented as separate blocks interchanging data intensively and continuously. This data transfer is responsible for a large part of the power consumption. The next generation computer technology is expected to solve problems at the exascale with 10$^{18}$ calculations each second. Even though these future computers will be incredibly powerful, if they are based on von Neumann type architectures, they will consume between 20 and 30 megawatts of power and will not have intrinsic physically built-in capabilities to learn or deal with complex data as our brain does. These needs can be addressed by neuromorphic computing systems which are inspired by the biological concepts of the human brain. This new generation of computers has the potential to be used for the storage and processing of large amounts of digital information with much lower power consumption than conventional processors. Among their potential future applications, an important niche is moving the control from data centers to edge devices. The aim of this roadmap is to present a snapshot of the present state of neuromorphic technology and provide an opinion on the challenges and opportunities that the future holds in the major areas of neuromorphic technology, namely materials, devices, neuromorphic circuits, neuromorphic algorithms, applications, and ethics. The roadmap is a collection of perspectives where leading researchers in the neuromorphic community provide their own view about the current state and the future challenges for each research area. We hope that this roadmap will be a useful resource by providing a concise yet comprehensive introduction to readers outside this field, for those who are just entering the field, as well as providing future perspectives for those who are well established in the neuromorphic computing community