Geometrically-constrained, parasitic-aware synthesis of analog ICs

In order to speed up the design process of analog ICs, iterations between different design stages should be avoided as much as possible. More specifically, spins between electrical and physical synthesis should be reduced for this is a very time-consuming task: if circuit performance including layout-induced degradations proves unacceptable, a re-design cycle must be entered, and electrical, physical, or both synthesis processes, would have to be repeated. It is also worth noting that if geometric optimization (e.g., area minimization) is undertaken after electrical synthesis, it may add up as another source of unexpected degradation of the circuit performance due to the impact of the geometric variables (e.g., transistor folds) on the device and the routing parasitic values. This awkward scenario is caused by the complete separation of said electrical and physical synthesis, a design practice commonly followed so far. Parasitic-aware synthesis, consisting in including parasitic estimates to the circuit netlist directly during electrical synthesis, has been proposed as solution. While most of the reported contributions either tackle parasitic-aware synthesis without paying special attention to geometric optimization or approach both issues only partially, this paper addresses the problem in a unified way. In what has been called layout-aware electrical synthesis, a simulation-based optimization algorithm explores the design space with geometric variables constrained to meet certain user-defined goals, which provides reliable estimates of layout-induced parasitics at each iteration, and, thereby, accurate evaluation of the circuit ultimate performance. This technique, demonstrated here through several design examples, requires knowing layout details beforehand; to facilitate this, procedural layout generation is used as physical synthesis approach due to its rapidness and ability to capture analog layout know-how.Ministerio de Educación y Ciencia TEC2004-0175

Accurate a priori signal integrity estimation using a multilevel dynamic interconnect model for deep submicron VLSI design.

A multilevel dynamic interconnect model was derived for accurate a priori signal integrity estimates. Cross-talk and delay estimations over interconnects in deep submicron technology were analyzed systematically using this model. Good accuracy and excellent time-efficiency were found compared with electromagnetic simulations. We aim to build a dynamic interconnect library with this model to facilitate the interconnect issues for future VLSI design

Two-level pipelined systolic array graphics engine

The authors report a VLSI design of an advanced systolic array graphics (SAG) engine built from pipelined functional units which can generate realistic images interactively for high-resolution displays. They introduce a structured frame store system as an environment for the advanced SAG engine and present the principles and architecture of the advanced SAG engine. They introduce pipelined functional units into this SAG engine to meet the performance requirements. This is done by a formal approach where the original systolic array is represented at bit level by a finite, vertex-weighted, edge-weighted, directed graph. Two architectures built from pipelined functional units are described. A prototype containing nine processing elements was fabricated in a 1.6-¿m CMOS technolog

Compact modelling in RF CMOS technology

With the continuous downscaling of complementary metal-oxide-semiconductor (CMOS) technology, the RF performance of metal-oxide-semiconductor field transistors (MOSFETs) has considerably improved over the past years. Today, the standard CMOS technology has become a popular choice for realizing radio frequency (RF) applications. The focus of the thesis is on device compact modelling methodologies in RF CMOS. Compact models oriented to integrated circuit (ICs) computer automatic design (CAD) are the key component of a process design kit (PDK) and the bridge between design houses and foundries. In this work, a novel substrate model is proposed for accurately characterizing the behaviour of RF-MOSFETs with deep n-wells (DNW). A simple test structure is presented to directly access the substrate parasitics from two-port measurements in DNWs. The most important passive device in RFIC design in CMOS is the spiral inductor. A 1-pi model with a novel substrate network is proposed to characterize the broadband loss mechanisms of spiral inductors. Based on the proposed 1-pi model, a physics-originated fully-scalable 2-pi model and model parameter extraction methodology are also presented for spiral inductors in this work. To test and verify the developed active and passive device models and model parameter extraction methods, a series of RF-MOSFETs and planar on-chip spiral inductors with different geometries manufactured by employing standard RF CMOS processes were considered. Excellent agreement between the measured and the simulated results validate the compact models and modelling technologies developed in this work

Development of Test Procedure For CMOS Operational Amplifier Application Circuits

The integrated circuit (IC) is an ultra-small and fragile electrical system. A chip is basically an IC placed in a protective black plastic casing. The only contact the outside world has with the IC is through the chips input-output and power supply pins. ICs are also prone to damage and to locate damages inside a chip requires special probing techniques. These techniques are incorporated from the beginning of the design stage of a chip. Design for Testability (DFT) is a method applied to the design stage of chips such that electrical testing of the chips at the end of the production stage is greatly simplified. For a chip manufacturer, DFT helps cut production cost by shortening the time to test finished chips w hich eventually decreases the time to market the chip. Built-In Self Test (BIST) chips, an outcome of DFT, are ICs designed with extended circuitry dedicated to test its electrical behavior which eventually could inform a manufacturer w here damage has occurred. The testing circuitry inside a BIST chip is complimented by a test pattern, which is a special signal that executes the actual testing. The main objective of this study is to develop a test procedure to test CMOS Operational Amplifier (Op-Amp) application circuits. The focus in the development of the testing procedure is to find a suitable test pattern. The study conducted results in the success of developing the said test procedure. The development of the test procedure is aided by a powerful computer software from Tanner Research Inc. called Tanner Tools. It is used for circuit simulation and development of a mask layout for an Op-Amp. The major findings of this thesis is that a faulty Op-Amp application circuit behaves differently from a faultless Op-Amp application circuit. From this finding a test pattern can be derived by comparing between faulty and faultless Op-Amp application circuit behavior through simulation. The only disadvantage of the test pattern is that it could only detect damages in the Op-Amp if the damages occurs only one at any given time. Thus it can be argued that in relation to DFT for an Op-Amp application circuit, it is not impossible for damages to be pin-pointed using the developed procedure

Product assurance technology for custom LSI/VLSI electronics

The technology for obtaining custom integrated circuits from CMOS-bulk silicon foundries using a universal set of layout rules is presented. The technical efforts were guided by the requirement to develop a 3 micron CMOS test chip for the Combined Release and Radiation Effects Satellite (CRRES). This chip contains both analog and digital circuits. The development employed all the elements required to obtain custom circuits from silicon foundries, including circuit design, foundry interfacing, circuit test, and circuit qualification

AI/ML Algorithms and Applications in VLSI Design and Technology

An evident challenge ahead for the integrated circuit (IC) industry in the nanometer regime is the investigation and development of methods that can reduce the design complexity ensuing from growing process variations and curtail the turnaround time of chip manufacturing. Conventional methodologies employed for such tasks are largely manual; thus, time-consuming and resource-intensive. In contrast, the unique learning strategies of artificial intelligence (AI) provide numerous exciting automated approaches for handling complex and data-intensive tasks in very-large-scale integration (VLSI) design and testing. Employing AI and machine learning (ML) algorithms in VLSI design and manufacturing reduces the time and effort for understanding and processing the data within and across different abstraction levels via automated learning algorithms. It, in turn, improves the IC yield and reduces the manufacturing turnaround time. This paper thoroughly reviews the AI/ML automated approaches introduced in the past towards VLSI design and manufacturing. Moreover, we discuss the scope of AI/ML applications in the future at various abstraction levels to revolutionize the field of VLSI design, aiming for high-speed, highly intelligent, and efficient implementations

DESIGNING LOW VOLTAGE AND POWER CMOS OP AMP

The importance of using low supply voltage for analogue circuit has enormously increased in recent past. The recent trend shows that a supply voltage can be degraded until 1.5 V. Low power consumption also important to increase the battery life, the packaging density and circuit reliability. CMOS op amp technology today can have power consumption lower than 200 uW. The objective of this project is to design low supply voltage and low power consumption CMOS operational amplifier. Low supply voltage op amp with 1.6 V has been successfully designed. The design was using bulk-driven PMOS transistors as an input differential of the op amp. The compensation capacitor was also used to control the power consumption. The op amp is capable of producing low power consumption of 20 uAV. The layout was design using 0.35 urn technology and have gone through DRC and LVS check. Software Virtuoso Schematic Capture and Virtuoso Spectre Circuit Simulator from cadence have been used for schematic capture and design simulation. For layout design, DRC and LVS check, softwere Calibre from Mentor Graphic have been used. I

Meeting the design challenges of nano-CMOS electronics: an introduction to an upcoming EPSRC pilot project

The years of ‘happy scaling’ are over and the fundamental challenges that the semiconductor industry faces, at both technology and device level, will impinge deeply upon the design of future integrated circuits and systems. This paper provides an introduction to these challenges and gives an overview of the Grid infrastructure that will be developed as part of a recently funded EPSRC pilot project to address them, and we hope, which will revolutionise the electronics design industry