Going Ballistic: Graphene Hot Electron Transistors

This paper reviews the experimental and theoretical state of the art in ballistic hot electron transistors that utilize two-dimensional base contacts made from graphene, i.e. graphene base transistors (GBTs). Early performance predictions that indicated potential for THz operation still hold true today, even with improved models that take non-idealities into account. Experimental results clearly demonstrate the basic functionality, with on/off current switching over several orders of magnitude, but further developments are required to exploit the full potential of the GBT device family. In particular, interfaces between graphene and semiconductors or dielectrics are far from perfect and thus limit experimental device integrity, reliability and performance

Annual Report 2021 - Institute of Ion Beam Physics and Materials Research

The year 2021 was still overshadowed by waves of the COVID-19 pandemic, although the arrival of efficient vaccinations together with the experience of the preceding year gave us a certain routine in handling the situation. By now the execution of meetings in an online mode using zoom and similar video conference systems has been recognized as actually being useful in certain situations, e.g. instead of flying across Europe to attend a three-hours meeting, but also to be able to attend seminars of distinguished scientists which otherwise would not be easily accessible. The scientific productivity of the institute has remained on a very high level, counting 190 publications with an unprecedented average impact factor of 8.0. Six outstanding and representative publications are reprinted in this Annual Report. 16 new third-party projects were granted, among them 7 DFG projects, but very remarkably also an EU funded project on nonlinear magnons for reservoir computing with industrial participation of Infineon Technologies Dresden and GlobalFoundries Dresden coordinated by Kathrin Schultheiß of our Institute. The scientific success was also reflected in two HZDR prizes awarded to the members of the Institute: Dr. Katrin Schultheiß received the HZDR Forschungspreis for her work on “Nonlinear magnonics as basis for a spin based neuromorphic computing architecture”, and Dr. Toni Hache was awarded the Doktorandenpreis for his thesis entitled “Frequency control of auto-oscillations of the magnetization in spin Hall nano-oscillators”. Our highly successful theoretician Dr. Arkady Krasheninnikov was quoted as Highly Cited Researcher 2021 by Clarivate. The new 1-MV facility for accelerator mass spectrometry (AMS) has been ordered from NEC (National Electrostatics Corporation). Design of a dedicated building to house the accelerator, the SIMS and including additional chemistry laboratories for enhanced sample preparation capabilities has started and construction is planned to be finished by mid 2023, when the majority of the AMS components are scheduled for delivery. In the course of developing a strategy for the HZDR - HZDR 2030+ Moving Research to the NEXT Level for the NEXT Gens - six research focus areas for our institute were identified. Concerning personalia, it should be mentioned that the long-time head of the spectroscopy department PD Dr. Harald Schneider went into retirement. His successor is Dr. Stephan Winnerl, who has been a key scientist in this department already for two decades. In addition, PD Dr. Sebastian Fähler was hired in the magnetism department who transferred several third-party projects with the associated PhD students to the Institute and strengthens our ties to the High Magnetic Field Laboratory, but also to the Institute of Fluid Dynamics. Finally, we would like to cordially thank all partners, friends, and organizations who supported our progress in 2021. First and foremost we thank the Executive Board of the Helmholtz-Zentrum Dresden-Rossendorf, the Minister of Science and Arts of the Free State of Saxony, and the Ministers of Education and Research, and of Economic Affairs and Climate Action of the Federal Government of Germany. Many partners from universities, industry and research institutes all around the world contributed essentially, and play a crucial role for the further development of the institute. Last but not least, the directors would like to thank all members of our institute for their efforts in these very special times and excellent contributions in 2021

Simulations of High Mobility AlGaN/GaN Field Effect Transistors. Mobility and Quantum Effects

Introduction to GaN and GaN-based HEMT. Mobility in HEMT and implementation of GaN mobility model in Sentaurus simulator. Quantum effects in HEMT and simultations of different back barriers (InGaN and AlGaN

Feature Papers in Electronic Materials Section

This book entitled "Feature Papers in Electronic Materials Section" is a collection of selected papers recently published on the journal Materials, focusing on the latest advances in electronic materials and devices in different fields (e.g., power- and high-frequency electronics, optoelectronic devices, detectors, etc.). In the first part of the book, many articles are dedicated to wide band gap semiconductors (e.g., SiC, GaN, Ga2O3, diamond), focusing on the current relevant materials and devices technology issues. The second part of the book is a miscellaneous of other electronics materials for various applications, including two-dimensional materials for optoelectronic and high-frequency devices. Finally, some recent advances in materials and flexible sensors for bioelectronics and medical applications are presented at the end of the book

Annual Report 2019 - Institute of Ion Beam Physics and Materials Research

The Institute of Ion Beam Physics and Materials Research conducts materials research for future applications in, e.g., information technology. To this end, we make use of the various possibilities offered by our Ion Beam Center (IBC) for synthesis, modification, and analysis of thin films and nanostructures, as well as of the free-electron laser FELBE at HZDR for THz spectroscopy. The analyzed materials range from semiconductors and oxides to metals and magnetic materials. They are investigated with the goal to optimize their electronic, magnetic, optical as well as structural functionality. This research is embedded in the Helmholtz Association’s programme “From Matter to Materials and Life”. Seven publications from last year are highlighted in this Annual Report to illustrate the wide scientific spectrum of our institute. After the scientific evaluation in the framework of the Helmholtz Programme-Oriented Funding (POF) in 2018 we had some time to concentrate on science again before end of the year a few of us again had to prepare for the strategic evaluation which took place in January 2020, which finally was also successful for the Institute

Silicon-basedI nanostructures: Growth and Characterizations of Si2Te3 nanowires and nanoplates

Silicon-basedI nanostructures: Growth and Characterizations of Si2Te3 nanowires and nanoplate

Advanced characterisation of novel III-nitride semiconductor based photonics and electronics on polar and non-polar substrates

Advanced characterisation has been carried out on a number of novel III-nitride based photonics and electronics, including micro-LED arrays achieved by a direct epitaxy approach, high performance c-plane HEMTs structure achieved by a novel growth method and non-polar GaN/AlGaN HEMTs. In this work, a systematic study has been conducted to understand the electrical properties of these novel devices, demonstrating their excellent properties. Furthermore, the electrical properties are directly related to epitaxial growth, which provides useful information for further improving device performance, such as 2D growth mode for GaN on a large lattice-mismatched substrate which plays an important in obtaining high breakdown and minimised leakage current for HEMTs. Micro-LEDs are the key elements for a microdisplay system, where electrical properties are extremely important. Potentially, any leakage current can trigger to turn on any neighbouring microLEDs which are supposed to be off. Instead of using conventional fabrication methods which normally enhances leakage current, our team developed a direct epitaxy approach to achieving microLED arrays. In this work, detailed I-V characteristic and capacitance measurements have been conducted on these novel microLED devices, demonstrating leakage currents as low as 14.1 nA per LED and a smooth negative capacitance curve instead of odd positive capacitance performances. Furthermore, a comparison study between our microLEDs and the microLEDs prepared using the conventional method indicates our device shows a large reduction of size-dependent inefficiency while such a behaviour is never observed on the microLEDs fabricated by the conventional methods. Unlike the classic two-step method for GaN growth on large lattice-matched sapphire, our team developed a high-temperature AlN buffer technology, where a 2D growth mode, instead of an initial 2D and then 3D growth mode that typically happens for the growth of conventional GaN growth, takes place through the whole growth process. This method allows us to achieve a breakdown electric field strength of 2.5 MV/cm, a leakage current of as low as 41.7 pA at 20 V and saturation current densities as high as 1.1 A/mm. In this work a systematic study has conducted in order to establish a relationship between the excellent device performance and material properties, where a very low screw dislocation density plays a critical role, while our 2D growth method can provide an excellent opportunity for achieving such a low screw dislocation density. This demonstrates the major advantage over the classic two-step method in the growth of power and RF devices. In our case, we have obtained an unintentional doping as low as 2×10^14 cm-3 and screw dislocation densities of 2.3×10^7 cm-2. Compared with c-plane GaN based HEMTs due to its intrinsic polarisation, non-polar GaN/AlGaN HEMTs on r-plane sapphire yields potential advantages in terms of the fabrication of normal-off devices which are particularly important for practical applications. However, it is a great challenge to achieve high quality non-polar GaN on sapphire. Some initial work has been conducted, where the detailed characterisation indicates an electron mobility of 43 cm2 V-1 s-1 has been initially obtained. Furthermore, instead of using an AlGaN/GaN heterostructure with a modulation doping, we deliberately use a quantum well structure as an electron channel, leading to a mobility of 76 cm2 V-1 s-1. Our simulations as well as measurements also provide a guideline for optimising the general epitaxial structure