Integrated Circuits/Microchips

With the world marching inexorably towards the fourth industrial revolution (IR 4.0), one is now embracing lives with artificial intelligence (AI), the Internet of Things (IoTs), virtual reality (VR) and 5G technology. Wherever we are, whatever we are doing, there are electronic devices that we rely indispensably on. While some of these technologies, such as those fueled with smart, autonomous systems, are seemingly precocious; others have existed for quite a while. These devices range from simple home appliances, entertainment media to complex aeronautical instruments. Clearly, the daily lives of mankind today are interwoven seamlessly with electronics. Surprising as it may seem, the cornerstone that empowers these electronic devices is nothing more than a mere diminutive semiconductor cube block. More colloquially referred to as the Very-Large-Scale-Integration (VLSI) chip or an integrated circuit (IC) chip or simply a microchip, this semiconductor cube block, approximately the size of a grain of rice, is composed of millions to billions of transistors. The transistors are interconnected in such a way that allows electrical circuitries for certain applications to be realized. Some of these chips serve specific permanent applications and are known as Application Specific Integrated Circuits (ASICS); while, others are computing processors which could be programmed for diverse applications. The computer processor, together with its supporting hardware and user interfaces, is known as an embedded system.In this book, a variety of topics related to microchips are extensively illustrated. The topics encompass the physics of the microchip device, as well as its design methods and applications

Embedding Logic and Non-volatile Devices in CMOS Digital Circuits for Improving Energy Efficiency

abstract: Static CMOS logic has remained the dominant design style of digital systems for more than four decades due to its robustness and near zero standby current. Static CMOS logic circuits consist of a network of combinational logic cells and clocked sequential elements, such as latches and flip-flops that are used for sequencing computations over time. The majority of the digital design techniques to reduce power, area, and leakage over the past four decades have focused almost entirely on optimizing the combinational logic. This work explores alternate architectures for the flip-flops for improving the overall circuit performance, power and area. It consists of three main sections. First, is the design of a multi-input configurable flip-flop structure with embedded logic. A conventional D-type flip-flop may be viewed as realizing an identity function, in which the output is simply the value of the input sampled at the clock edge. In contrast, the proposed multi-input flip-flop, named PNAND, can be configured to realize one of a family of Boolean functions called threshold functions. In essence, the PNAND is a circuit implementation of the well-known binary perceptron. Unlike other reconfigurable circuits, a PNAND can be configured by simply changing the assignment of signals to its inputs. Using a standard cell library of such gates, a technology mapping algorithm can be applied to transform a given netlist into one with an optimal mixture of conventional logic gates and threshold gates. This approach was used to fabricate a 32-bit Wallace Tree multiplier and a 32-bit booth multiplier in 65nm LP technology. Simulation and chip measurements show more than 30% improvement in dynamic power and more than 20% reduction in core area. The functional yield of the PNAND reduces with geometry and voltage scaling. The second part of this research investigates the use of two mechanisms to improve the robustness of the PNAND circuit architecture. One is the use of forward and reverse body biases to change the device threshold and the other is the use of RRAM devices for low voltage operation. The third part of this research focused on the design of flip-flops with non-volatile storage. Spin-transfer torque magnetic tunnel junctions (STT-MTJ) are integrated with both conventional D-flipflop and the PNAND circuits to implement non-volatile logic (NVL). These non-volatile storage enhanced flip-flops are able to save the state of system locally when a power interruption occurs. However, manufacturing variations in the STT-MTJs and in the CMOS transistors significantly reduce the yield, leading to an overly pessimistic design and consequently, higher energy consumption. A detailed analysis of the design trade-offs in the driver circuitry for performing backup and restore, and a novel method to design the energy optimal driver for a given yield is presented. Efficient designs of two nonvolatile flip-flop (NVFF) circuits are presented, in which the backup time is determined on a per-chip basis, resulting in minimizing the energy wastage and satisfying the yield constraint. To achieve a yield of 98%, the conventional approach would have to expend nearly 5X more energy than the minimum required, whereas the proposed tunable approach expends only 26% more energy than the minimum. A non-volatile threshold gate architecture NV-TLFF are designed with the same backup and restore circuitry in 65nm technology. The embedded logic in NV-TLFF compensates performance overhead of NVL. This leads to the possibility of zero-overhead non-volatile datapath circuits. An 8-bit multiply-and- accumulate (MAC) unit is designed to demonstrate the performance benefits of the proposed architecture. Based on the results of HSPICE simulations, the MAC circuit with the proposed NV-TLFF cells is shown to consume at least 20% less power and area as compared to the circuit designed with conventional DFFs, without sacrificing any performance.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

Voltage drop tolerance by adaptive voltage scaling using clock-data compensation

Proyecto de Graduación (Maestría en Ingeniería en Electrónica) Instituto Tecnológico de Costa Rica, Escuela de Ingeniería Electrónica, 2019.El ruido de alta frecuencia en la red de alimentación compromete el rendimiento y la eficiencia energética de los sistemas electrónicos con microprocesadores, restringiendo la frecuencia máxima de operación de los sistemas y disminuyendo la confiabilidad de los dispositivos. La frecuencia máxima será determinada por la ruta de datos más crítica (la ruta de datos más lenta). De esta manera, es necesario configurar una banda de guarda para tolerar caídas de voltaje sin tener ningún problema de ejecución, pero sacrificando el rendimiento eléctrico. Este trabajo evalúa el impacto de la caída de voltaje en el rendimiento de los circuitos CMOS de alta densidad, estableciendo un conjunto de casos de prueba que contienen diferentes configuraciones de circuitos. Se desarrolló una técnica adaptable y escalable para mejorar la tolerancia a la caída de voltaje en los circuitos CMOS a través del escalado adaptativo, aprovechando el efecto de compensación de datos del reloj. La solución propuesta se validó aplicándola a diferentes casos de prueba en una tecnología FinFet-CMOS a nivel de simulación del diseño físico.High-frequency power supply noise compromises performance and energy efficiency of microprocessor-based products, restricting the maximum frequency of operation for electronic systems and decreasing device reliability. The maximum frequency is going to be determine by the most critical data path (the slowest data path). In this way, a guard band needs to be set in order to tolerate voltage drops without having any execution problem, but leading to a performance reduction. This work evaluates the impact of voltage drop in the performance of CMOS circuits by establishing a set of test cases containing different circuit configurations. An adaptive and scalable technique is proposed to enhance voltage drop tolerance in CMOS circuits through adaptive scaling, taking advantage of the clock-data compensation effect. The proposed solution is validated by applying it to different test cases in a FinFet CMOS technology at a post-layout simulation level

Advances in Solid State Circuit Technologies

This book brings together contributions from experts in the fields to describe the current status of important topics in solid-state circuit technologies. It consists of 20 chapters which are grouped under the following categories: general information, circuits and devices, materials, and characterization techniques. These chapters have been written by renowned experts in the respective fields making this book valuable to the integrated circuits and materials science communities. It is intended for a diverse readership including electrical engineers and material scientists in the industry and academic institutions. Readers will be able to familiarize themselves with the latest technologies in the various fields

Design of clock and data recovery circuits for energy-efficient short-reach optical transceivers

Nowadays, the increasing demand for cloud based computing and social media services mandates higher throughput (at least 56 Gb/s per data lane with 400 Gb/s total capacity 1) for short reach optical links (with the reach typically less than 2 km) inside data centres. The immediate consequences are the huge and power hungry data centers. To address these issues the intra-data-center connectivity by means of optical links needs continuous upgrading. In recent years, the trend in the industry has shifted toward the use of more complex modulation formats like PAM4 due to its spectral efficiency over the traditional NRZ. Another advantage is the reduced number of channels count which is more cost-effective considering the required area and the I/O density. However employing PAM4 results in more complex transceivers circuitry due to the presence of multilevel transitions and reduced noise budget. In addition, providing higher speed while accommodating the stringent requirements of higher density and energy efficiency (< 5 pJ/bit), makes the design of the optical links more challenging and requires innovative design techniques both at the system and circuit level. This work presents the design of a Clock and Data Recovery Circuit (CDR) as one of the key building blocks for the transceiver modules used in such fibreoptic links. Capable of working with PAM4 signalling format, the new proposed CDR architecture targets data rates of 50−56 Gb/s while achieving the required energy efficiency (< 5 pJ/bit). At the system level, the design proposes a new PAM4 PD which provides a better trade-off in terms of bandwidth and systematic jitter generation in the CDR. By using a digital loop controller (DLC), the CDR gains considerable area reduction with flexibility to adjust the loop dynamics. At the circuit level it focuses on applying different circuit techniques to mitigate the circuit imperfections. It presents a wideband analog front end (AFE), suitable for a 56 Gb/s, 28-Gbaud PAM-4 signal, by using an 8x interleaved, master/ slave based sample and hold circuit. In addition, the AFE is equipped with a calibration scheme which corrects the errors associated with the sampling channels’ offset voltage and gain mismatches. The presented digital to phase converter (DPC) features a modified phase interpolator (PI), a new quadrature phase corrector (QPC) and multi-phase output with de-skewing capabilities.The DPC (as a standalone block) and the CDR (as the main focus of this work) were fabricated in 65-nm CMOS technology. Based on the measurements, the DPC achieves DNL/INL of 0.7/6 LSB respectively while consuming 40.5 mW power from 1.05 V supply. Although the CDR was not fully operational with the PAM4 input, the results from 25-Gbaud PAM2 (NRZ) test setup were used to estimate the performance. Under this scenario, the 1-UI JTOL bandwidth was measured to be 2 MHz with BER threshold of 10−4. The chip consumes 236 mW of power while operating on 1 − 1.2 V supply range achieving an energyefficiency of 4.27 pJ/bit

Integrated Circuit Design for Miniaturized, Trackable, Ultrasound Based Biomedical Implants

This thesis focuses on the design of an ultrasonography compatible implantable sensor platform, as a novel approach that implements a miniaturized, battery-less, real-time trackable parallel biosensing system. In addition to the frontend circuit, a sub-nW fully integrated pH sensor is designed in a way that can be easily integrated with the proposed sonography-compatible sensor platform. Combining the two integrated circuits together, the whole system will be able to map in vivo physiological information acquired from a distributed set of sensors on top of the ultrasound movie, leading to the idea envisioned as “augmented ultrasonography”. Implemented in a 0.18 μm technology, an ultrasound power and data frontend circuit is designed to enable medical sensing implants to operate in an ultrasonography compatible way. When placed within the field of view of an imaging transducer, the frontend circuit harvests the power through a piece of piezo crystal from a minimally modified brightness-mode (B-mode) ultrasound imaging process that is commonly adopted in modern medical practices. The implant can also establish bi-directional data communication channels with the imaging transducer, allowing data to be transmitted in a way synchronized to the frame rate of the B-mode film. The design of the circuit is made possible by a combination of ultra-low-power circuit techniques and novel frontend circuit topologies, as imaging ultrasound waves in the form of short pulses with extremely low duty cycle poses challenges that has not previously seen in other implantable sensor systems. The proposed prototype achieves a total area of 0.6mm² for the integrated circuit (IC), as well as 71mm theoretical maximum implantable depth (up to 40 mm is verified experimentally). These two together give opportunities for this design to become the next generation solution for deep-tissue bio-sensing implants. Realized using the same 0.18 μm technology, the fully integrated pH sensor is designed to deliver accurate pH readouts, at a reasonable speed of 1 sample per second, while consuming only 0.72 nW of power. Using an ion-sensitive field effect transistor (ISFET) and reference field effect transistor pair (REFET), the IC requires minimum additional post fabrication to deliver 10-bit resolution pH readouts at an end-to-end sensitivity of 65.8 LSB/pH. When working as a standalone device, this work advances the state-of-the-art of ISFET based pH sensor design. With an addition of 0.46 mm² of area, it is possible to integrate it with the ultrasound sonography compatible implant platform. This potential integration will further advance the vision of the augmented ultrasonography: real-time display of physiological information in a B-mode film, with the help from a distributed bio-sensor system for deep-tissue physiology monitoring

Radiation Tolerant Electronics, Volume II

Research on radiation tolerant electronics has increased rapidly over the last few years, resulting in many interesting approaches to model radiation effects and design radiation hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation hardened electronics for space applications, high-energy physics experiments such as those on the large hadron collider at CERN, and many terrestrial nuclear applications, including nuclear energy and safety management. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their ionizing radiation susceptibility has raised many exciting challenges, which are expected to drive research in the coming decade.After the success of the first Special Issue on Radiation Tolerant Electronics, the current Special Issue features thirteen articles highlighting recent breakthroughs in radiation tolerant integrated circuit design, fault tolerance in FPGAs, radiation effects in semiconductor materials and advanced IC technologies and modelling of radiation effects

Microarchitectural Low-Power Design Techniques for Embedded Microprocessors

With the omnipresence of embedded processing in all forms of electronics today, there is a strong trend towards wireless, battery-powered, portable embedded systems which have to operate under stringent energy constraints. Consequently, low power consumption and high energy efficiency have emerged as the two key criteria for embedded microprocessor design. In this thesis we present a range of microarchitectural low-power design techniques which enable the increase of performance for embedded microprocessors and/or the reduction of energy consumption, e.g., through voltage scaling. In the context of cryptographic applications, we explore the effectiveness of instruction set extensions (ISEs) for a range of different cryptographic hash functions (SHA-3 candidates) on a 16-bit microcontroller architecture (PIC24). Specifically, we demonstrate the effectiveness of light-weight ISEs based on lookup table integration and microcoded instructions using finite state machines for operand and address generation. On-node processing in autonomous wireless sensor node devices requires deeply embedded cores with extremely low power consumption. To address this need, we present TamaRISC, a custom-designed ISA with a corresponding ultra-low-power microarchitecture implementation. The TamaRISC architecture is employed in conjunction with an ISE and standard cell memories to design a sub-threshold capable processor system targeted at compressed sensing applications. We furthermore employ TamaRISC in a hybrid SIMD/MIMD multi-core architecture targeted at moderate to high processing requirements (> 1 MOPS). A range of different microarchitectural techniques for efficient memory organization are presented. Specifically, we introduce a configurable data memory mapping technique for private and shared access, as well as instruction broadcast together with synchronized code execution based on checkpointing. We then study an inherent suboptimality due to the worst-case design principle in synchronous circuits, and introduce the concept of dynamic timing margins. We show that dynamic timing margins exist in microprocessor circuits, and that these margins are to a large extent state-dependent and that they are correlated to the sequences of instruction types which are executed within the processor pipeline. To perform this analysis we propose a circuit/processor characterization flow and tool called dynamic timing analysis. Moreover, this flow is employed in order to devise a high-level instruction set simulation environment for impact-evaluation of timing errors on application performance. The presented approach improves the state of the art significantly in terms of simulation accuracy through the use of statistical fault injection. The dynamic timing margins in microprocessors are then systematically exploited for throughput improvements or energy reductions via our proposed instruction-based dynamic clock adjustment (DCA) technique. To this end, we introduce a 6-stage 32-bit microprocessor with cycle-by-cycle DCA. Besides a comprehensive design flow and simulation environment for evaluation of the DCA approach, we additionally present a silicon prototype of a DCA-enabled OpenRISC microarchitecture fabricated in 28 nm FD-SOI CMOS. The test chip includes a suitable clock generation unit which allows for cycle-by-cycle DCA over a wide range with fine granularity at frequencies exceeding 1 GHz. Measurement results of speedups and power reductions are provided

Ultra-thin silicon technology for tactile sensors

In order to meet the requirements of high performance flexible electronics in fast growing portable consumer electronics, robotics and new fields such as Internet of Things (IoT), new techniques such as electronics based on nanostructures, molecular electronics and quantum electronics have emerged recently. The importance given to the silicon chips with thickness below 50 μm is particularly interesting as this will advance the 3D IC technology as well as open new directions for high-performance flexible electronics. This doctoral thesis focusses on the development of silicon–based ultra-thin chip (UTC) for the next generation flexible electronics. UTCs, on one hand can provide processing speed at par with state-of-the-art CMOS technology, and on the other provide the mechanical flexibility to allow smooth integration on flexible substrates. These development form the motivation behind the work presented in this thesis. As the thickness of any silicon piece decreases, the flexural rigidity decreases. The flexural rigidity is defined as the force couple required to bend a non-rigid structure to a unit curvature, and therefore the flexibility increases. The new approach presented in this thesis for achieving thin silicon exploits existing and well-established silicon infrastructure, process, and design modules. The thin chips of thicknesses ranging between 15 μm – 30 μm, were obtained from processed bulk wafer using anisotropic chemical etching. The thesis also presents thin wafer transfer using two-step transfer printing approach, packaging by lamination or encapsulation between two flexible layerand methods to get the electrical connections out of the chip. The devices realised on the wafer as part of front-end processing, consisted capacitors and transistors, have been tested to analyse the effect of bending on the electrical characteristics. The capacitance of metal-oxide-semiconductor (MOS) capacitors increases by ~5% during bending and similar shift is observed in flatband and threshold voltages. Similarly, the carrier mobility in the channel region of metal-oxide-semiconductor field effect transistor (MOSFET) increases by 9% in tensile bending and decreases by ~5% in compressive bending. The analytical model developed to capture the effect of banding on device performance showed close matching with the experimental results. In order to employ these devices as tactile sensors, two types of piezoelectric materials are investigated, and used in extended gate configuration with the MOSFET. Firstly, a nanocomposite of Poly(vinylidene fluoride-co-trifluoroethylene), P(VDF-TrFE) and barium titanate (BT) was developed. The composite, due to opposite piezo and pyroelectric coefficients of constituents, was able to suppress the sensitivity towards temperature when force and temperature varied together, The sensitivity to force in extended gate configuration was measured to be 630 mV/N, and sensitivity to temperature was 6.57 mV/oC, when it was varied during force application. The process optimisation for sputtering piezoelectric Aluminium Nitride (AlN) was also carried out with many parametric variation. AlN does not require poling to exhibit piezoelectricity and therefore offers an attractive alternative for the piezoelectric layer used in devices such as POSFET (where piezoelectric material is directly deposited over the gate area of MOSFET). The optimised process gave highly orientated columnar structure AlN with piezoelectric coefficient of 5.9 pC/N and when connected in extended gate configuration, a sensitivity (normalised change in drain current per unit force) of 2.65 N-1 was obtained