III-V-on-silicon photonic devices for optical communication and sensing

In the paper, we review our work on heterogeneous III-V-on-silicon photonic components and circuits for applications in optical communication and sensing. We elaborate on the integration strategy and describe a broad range of devices realized on this platform covering a wavelength range from 850 nm to 3.85 μm

Optical interconnect solution with plasmonic modulator and Ge photodetector array

We report on an optical chip-to-chip interconnect solution, thereby demonstrating plasmonics as a solution for ultra-dense, high-speed short-reach communications. The interconnect comprises a densely integrated plasmonic Mach-Zehnder modulator array that is packaged with standard driving electronics. On the receiver side, a germanium photodetector array is integrated with trans-impedance amplifiers. A multicore fiber provides a compact optical interface to the array. We demonstrate 4 × 20 Gb/s on-off keying signaling with direct detection.ISSN:1041-1135ISSN:1941-017

Towards On-Chip Self-Referenced Frequency-Comb Sources Based on Semiconductor Mode-Locked Lasers.

Miniaturization of frequency-comb sources could open a host of potential applications in spectroscopy, biomedical monitoring, astronomy, microwave signal generation, and distribution of precise time or frequency across networks. This review article places emphasis on an architecture with a semiconductor mode-locked laser at the heart of the system and subsequent supercontinuum generation and carrier-envelope offset detection and stabilization in nonlinear integrated optics

Channel Characterization for Chip-scale Wireless Communications within Computing Packages

Wireless Network-on-Chip (WNoC) appears as a promising alternative to conventional interconnect fabrics for chip-scale communications. WNoC takes advantage of an overlaid network composed by a set of millimeter-wave antennas to reduce latency and increase throughput in the communication between cores. Similarly, wireless inter-chip communication has been also proposed to improve the information transfer between processors, memory, and accelerators in multi-chip settings. However, the wireless channel remains largely unknown in both scenarios, especially in the presence of realistic chip packages. This work addresses the issue by accurately modeling flip-chip packages and investigating the propagation both its interior and its surroundings. Through parametric studies, package configurations that minimize path loss are obtained and the trade-offs observed when applying such optimizations are discussed. Single-chip and multi-chip architectures are compared in terms of the path loss exponent, confirming that the amount of bulk silicon found in the pathway between transmitter and receiver is the main determinant of losses.Comment: To be presented 12th IEEE/ACM International Symposium on Networks-on-Chip (NOCS 2018); Torino, Italy; October 201

28 Gb/s direct modulation heterogeneously integrated C-band InP/SOI DFB laser

We demonstrate direct modulation of a heterogeneously integrated C-band DFB laser on SOI at 28 Gb/s with a 2 dB extinction ratio. This is the highest direct modulation bitrate so far reported for a membrane laser coupled to an SOI waveguide. The laser operates single mode with 6 mW output power at 100 mA bias current. The 3 dB modulation bandwidth is 15 GHz. Transmission experiments using a 2 km non zero dispersion shifted single mode fiber were performed at 28 Gb/s bitrate using a 2(7)-1 NRZ-PRBS pattern resulting in a 1 dB power penalty. (C) 2015 Optical Society of Americ

Wavelength-multiplexed duplex transceiver based on III-V/Si hybrid integration for off-chip and on-chip optical interconnects

A six-channel wavelength-division-multiplexed optical transceiver with a compact footprint of 1.5 x 0.65 mm(2) for off-chip and on-chip interconnects is demonstrated on a single silicon-on-insulator chip. An arrayed waveguide grating is used as the (de)multiplexer, and III-V electroabsorption sections fabricated by hybrid integration technology are used as both modulators and detectors, which also enable duplex links. The 30-Gb/s capacity for each of the six wavelength channels for the off-chip transceiver is demonstrated. For the on-chip interconnect, an electrical-to-electrical 3-dB bandwidth of 13 GHz and a data rate of 30 Gb/s per wavelength are achieved

Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies

This invited paper reviews the progress of silicon–germanium (SiGe) bipolar-complementary metal–oxide–semiconductor (BiCMOS) technology-based integrated circuits (ICs) during the last two decades. Focus is set on various transceiver (TRX) realizations in the millimeter-wave range from 60 GHz and at terahertz (THz) frequencies above 300 GHz. This article discusses the development of SiGe technologies and ICs with the latter focusing on the commercially most important applications of radar and beyond 5G wireless communications. A variety of examples ranging from 77-GHz automotive radar to THz sensing as well as the beginnings of 60-GHz wireless communication up to THz chipsets for 100-Gb/s data transmission are recapitulated. This article closes with an outlook on emerging fields of research for future advancement of SiGe TRX performance