Curvature-driven PDE methods for matrix-valued images

Matrix-valued data sets arise in a number of applications including diffusion tensor magnetic resonance imaging (DT-MRI) and physical measurements of anisotropic behaviour. Consequently, there arises the need to filter and segment such tensor fields. In order to detect edgelike structures in tensor fields, we first generalise Di Zenzo\u27s concept of a structure tensor for vector-valued images to tensor-valued data. This structure tensor allows us to extend scalar-valued mean curvature motion and self-snakes to the tensor setting. We present both two-dimensional and three-dimensional formulations, and we prove that these filters maintain positive semidefiniteness if the initial matrix data are positive semidefinite. We give an interpretation of tensorial mean curvature motion as a process for which the corresponding curve evolution of each generalised level line is the gradient descent of its total length. Moreover, we propose a geodesic active contour model for segmenting tensor fields and interpret it as a minimiser of a suitable energy functional with a metric induced by the tensor image. Since tensorial active contours incorporate information from all channels, they give a contour representation that is highly robust under noise. Experiments on three-dimensional DT-MRI data and an indefinite tensor field from fluid dynamics show that the proposed methods inherit the essential properties of their scalar-valued counterparts

Ferroelectric field effect at ionically conducting oxide interfaces

Tesis de la Universidad Complutense de Madrid, Facultad de Ciencias Físicas, leída el 17-01-2019En este trabajo, realizamos un análisis de la interacción entre la ferroelectricidad, las paredes de dominio ferroeléctrico cargadas y el memristor en las dimensiones reducidas de una unión túnel. Para alcanzar este objetivo, crecemos bicapas de heteroestructuras epitaxiales de manganitas ferromagnéticas.The main findings of this dissertation are summarized here. We performed an analysis of the interplay between ferroelectricity, ferromagnetism, domain structure and memristive response inmagnetic tunnel junctions. In order to reach this objective, we grew epitaxial heterostructures combining ferromagnetic manganites.Fac. de Ciencias FísicasTRUEunpu

Towards magnetic resonance in scanning tunneling microscopy using heterodyne detection

The present work introduces a new concept for magnetic resonance measurements in the GHz regime inside a scanning tunneling microscope. It is based on heterodyne detection in a spin-polarized tunneling barrier. The experimental requirements, including a new method to suppress transmission effects, are explained. Measurements on three model systems which were studied to validate the new technique are presented and compared to simulations

Towards magnetic resonance in scanning tunneling microscopy using heterodyne detection

The present work introduces a new concept for magnetic resonance measurements in the GHz regime inside a scanning tunneling microscope. It is based on heterodyne detection in a spin-polarized tunneling barrier. The experimental requirements, including a new method to suppress transmission effects, are explained. Measurements on three model systems which were studied to validate the new technique are presented and compared to simulations

Quantum properties of atomic-sized conductors

Using remarkably simple experimental techniques it is possible to gently break a metallic contact and thus form conducting nanowires. During the last stages of the pulling a neck-shaped wire connects the two electrodes, the diameter of which is reduced to single atom upon further stretching. For some metals it is even possible to form a chain of individual atoms in this fashion. Although the atomic structure of contacts can be quite complicated, as soon as the weakest point is reduced to just a single atom the complexity is removed. The properties of the contact are then dominantly determined by the nature of this atom. This has allowed for quantitative comparison of theory and experiment for many properties, and atomic contacts have proven to form a rich test-bed for concepts from mesoscopic physics. Properties investigated include multiple Andreev reflection, shot noise, conductance quantization, conductance fluctuations, and dynamical Coulomb blockade. In addition, pronounced quantum effects show up in the mechanical properties of the contacts, as seen in the force and cohesion energy of the nanowires. We review this reseach, which has been performed mainly during the past decade, and we discuss the results in the context of related developments.Comment: Review, 120 pages, 98 figures. In view of the file size figures have been compressed. A higher-resolution version can be found at: http://lions1.leidenuniv.nl/wwwhome/ruitenbe/review/QPASC-hr-ps-v2.zip (5.6MB zip PostScript

Magnetic Tunnel Junctions based on spinel ZnxFe3-xO4: Magnetic Tunnel Junctions based onspinel ZnxFe3-xO4

Die vorliegende Arbeit befasst sich mit magnetischen Tunnelkontakten (magnetic tunnel junctions, MTJs) auf Basis des Oxids Zinkferrit (ZnxFe3-xO4). Dabei soll das Potential dieses Materials durch die Demonstration des Tunnelmagnetowiderstandes (tunnel magnetoresistance, TMR) in zinkferritbasierten Tunnelkontakten gezeigt werden. Dazu wurde ein Probendesign für MTJs auf Basis der „pseudo spin valve“-Geometrie entwickelt. Die Basis für dieseStrukturen ist ein Dünnfilmstapel aus MgO (Substrat) / TiN / ZnxFe3-xO4 / MgO / Co. Dieser ist mittels gepulster Laserabscheidung (pulsed laser deposition, PLD) hergestellt. Im Rahmen dieser Arbeit wurden die strukturellen, elektrischen und magnetischen Eigenschaften der Dünnfilme untersucht. Des weiteren wurden die fertig prozessierten MTJ-Bauelemente an einem im Rahmen dieser Arbeit entwickeltem und aufgebautem TMR-Messplatz vermessen. Dabei ist es gelungen einen TMR-Effekt von 0.5% in ZnxFe3-xO4-basierten MTJs nachzuweisen. Das erste Kapitel der Arbeit gibt eine Einführung in die spintronischen Effekte Riesenmagnetowiderstand (giant magnetoresistance, GMR) und Tunnelmagnetowiderstand (TMR). Deren technologische Anwendungen sowie die grundlegenden physikalischen Effekte und Modelle werden diskutiert. Das zweite Kapitel gibt eine Übersicht über die Materialklasse der spinellartigen Ferrite. Der Fokus liegt auf den Materialien Magnetit (Fe3O4) sowie Zinkferrit (ZnxFe3-xO4). Die physikalischen Modelle zur Beschreibung der strukturellen, magnetischen und elektrischen Eigenschaften dieser Materialien werden dargelegt sowie ein Literaturüberblick über experimentelle und theoretische Arbeiten gegeben. Im dritten Kapitel werden die im Rahmen dieser Arbeit verwendeten Probenpräparations- und Charakterisierungsmethoden vorgestellt und technische Details sowie physikalische Grundlagen erläutert. Die Entwicklung eines neuen Probendesigns zum Nachweis des TMR-Effekts in ZnxFe3-xO4-basierten MTJs ist Gegenstand des vierten Kapitels. Die Entwicklung des Probenaufbaus sowie die daraus resultierende Probenprozessierung werden beschrieben. Die beiden letzten Kapitel befassen sich mit der strukturellen, elektrischen und magnetischen Charakterisierung der mittels PLD abgeschiedenen Dünnfilme sowie der Tunnelkontaktstrukturen

Impact of brain tissue filtering on neurostimulation fields: A modeling study

Electrical neurostimulation techniques, such as deep brain stimulation (DBS) and transcranial magnetic stimulation (TMS), are increasingly used in the neurosciences, e.g., for studying brain function, and for neurotherapeutics, e.g., for treating depression, epilepsy, and Parkinson's disease. The characterization of electrical properties of brain tissue has guided our fundamental understanding and application of these methods, from electrophysiologic theory to clinical dosing-metrics. Nonetheless, prior computational models have primarily relied on ex-vivo impedance measurements. We recorded the in-vivo impedances of brain tissues during neurosurgical procedures and used these results to construct MRI guided computational models of TMS and DBS neurostimulatory fields and conductance-based models of neurons exposed to stimulation. We demonstrated that tissues carry neurostimulation currents through frequency dependent resistive and capacitive properties not typically accounted for by past neurostimulation modeling work. We show that these fundamental brain tissue properties can have significant effects on the neurostimulatory-fields (capacitive and resistive current composition and spatial/temporal dynamics) and neural responses (stimulation threshold, ionic currents, and membrane dynamics). These findings highlight the importance of tissue impedance properties on neurostimulation and impact our understanding of the biological mechanisms and technological potential of neurostimulatory methods.United States. Defense Advanced Research Projects Agency (Contract W31P4Q-09-C-0117)National Institute of Neurological Disorders and Stroke (U.S.) (Award R43NS062530)National Institute of Neurological Disorders and Stroke (U.S.) (Award 1R44NS080632

Electrical detection of spin state switching in electromigrated nanogap devices

Spin crossover is an effect shown in some transition metal complexes where the spin state of the molecule undergoes a transition from a low spin to a high spin state via the application of light, pressure or a change in temperature. This behaviour makes these complexes an attractive candidate to form electronic molecular-scale switches as the electrical resistance of the compound differs between the two spin states. Although the spin crossover effect is commonly studied in its bulk form, the integration of a single molecule into a solid-state device while maintaining the magnetic bi-stability is highly desirable, but remains challenging. This is not only due to difficulties in capturing a single molecule between electrodes and making electrical connections but it is also due to the strong coupling effects imparted on the molecule by the high-density metallic states of the electrodes that can prevent the spin transition from occurring.In recent years there have been many attempts at studying spin crossover complexes at a single molecule level. Many of these have used scanning tunneling microscopy or break junction techniques. While these studies have highlighted the unique and promising electronic properties of these compounds, these techniques are unsuitable for real world devices. This thesis demonstrates a means to make electrical contact to single or small numbers of molecules between gold electrodes fabricated using a bilayer nanoimprint lithography and a feedback controlled electromigration method. This method, enabling high throughput and low-cost fabrication is potentially suitable for scaling to large area planar devices and as such may be used for commercially producing molecular devices.To validate the quality of the nanogaps, devices containing self-assembled monolayers of benzenethiol were first studied. The shape and magnitude of I-V curves measured on nanogap devices containing the benzenethiol monolayers are in good agreement with previously published work using similar molecules in mechanically controlled break junctions. The resulting I-V characteristics were analyzed using the single level resonant tunneling model as well as transition voltage spectroscopy and are consistent with transport through molecular junctions in which the benzenethiol molecules are - stacked. These highly conducting molecular junctions may have potential uses for “soft” coupling to sensitive target molecules.Following validation of the molecular nanojunction fabrication and measurement process, the experimental work shifted to studying electronic transport through spin crossover complexes with a focus on Schiff-base compounds that are specifically tailored for surface deposition. In the case of measurements made on the bulk compound, a sharp spin transition centered at a temperature around 80 K was observed, while a shift to lower temperatures was found for thin films of the complex. In contrast, nanojunction devices containing single molecules displayed very different behaviour, with distinct and reproducible telegraphic-like switching between two resistance states when cooled below 160 K. These two states are attributed to the two different spin states of the complex. The presence of these two resistive states indicates that the spin crossover is preserved at the single molecule level and that a spin-state dependent tunneling process is taking place. Interestingly, in some cases a multi-level switching behaviour is detected with four possible conductance states. This behaviour is attributed to the presence of two spin crossover molecules in the nanogap