Green on-chip inductors in three-dimensional integrated circuits

This thesis focuses on the technique for the improvement of quality factor and inductance of the TSV inductors and then on the utilization of TSV inductors in various on-chip applications such as DC-DC converter and resonant clocking. Through-silicon-vias (TSVs) are the enabling technique for three-dimensional integrated circuits (3D ICs). However, their large area significantly reduces the benefits that can be obtained by 3D ICs. On the other hand, a major limiting factor for the implementation of many on-chip circuits such as DC-DC converters and resonant clocking is the large area overhead induced by spiral inductors. Several works have been proposed in the literature to make inductors out of idle TSVs. In this thesis, the technique to improve the quality factor and inductance is proposed and then discusses about two applications utilizing TSV inductors i.e., inductive DC-DC converters and LC resonant clocking. The TSV inductor performs inferior to spiral inductors due to its increases losses. Hence to improve the performance of the TSV inductor, the losses should be reduced. Inductive DC-DC converters become prominent for on-chip voltage conversion because of their high efficiency compared with other types of converters (e.g. linear and capacitive converters). On the other hand, to reduce on-chip power, LC resonant clocking has become an attractive option due to its same amplitude and phases compared to other resonant clocking methods such as standing wave and rotary wave. A major challenge for both applications is associated with the required inductor area. In this thesis, the effectiveness of such TSV inductors in addressing both challenges are demonstrated --Abstract, page iv

Architectural-Physical Co-Design of 3D CPUs with Micro-Fluidic Cooling

The performance, energy efficiency and cost improvements due to traditional technology scaling have begun to slow down and present diminishing returns. Underlying reasons for this trend include fundamental physical limits of transistor scaling, the growing significance of quantum effects as transistors shrink, and a growing mismatch between transistors and interconnects regarding size, speed and power. Continued Moore's Law scaling will not come from technology scaling alone, and must involve improvements to design tools and development of new disruptive technologies such as 3D integration. 3D integration presents potential improvements to interconnect power and delay by translating the routing problem into a third dimension, and facilitates transistor density scaling independent of technology node. Furthermore, 3D IC technology opens up a new architectural design space of heterogeneously-integrated high-bandwidth CPUs. Vertical integration promises to provide the CPU architectures of the future by integrating high performance processors with on-chip high-bandwidth memory systems and highly connected network-on-chip structures. Such techniques can overcome the well-known CPU performance bottlenecks referred to as memory and communication wall. However the promising improvements to performance and energy efficiency offered by 3D CPUs does not come without cost, both in the financial investments to develop the technology, and the increased complexity of design. Two main limitations to 3D IC technology have been heat removal and TSV reliability. Transistor stacking creates increases in power density, current density and thermal resistance in air cooled packages. Furthermore the technology introduces vertical through silicon vias (TSVs) that create new points of failure in the chip and require development of new BEOL technologies. Although these issues can be controlled to some extent using thermal-reliability aware physical and architectural 3D design techniques, high performance embedded cooling schemes, such as micro-fluidic (MF) cooling, are fundamentally necessary to unlock the true potential of 3D ICs. A new paradigm is being put forth which integrates the computational, electrical, physical, thermal and reliability views of a system. The unification of these diverse aspects of integrated circuits is called Co-Design. Independent design and optimization of each aspect leads to sub-optimal designs due to a lack of understanding of cross-domain interactions and their impacts on the feasibility region of the architectural design space. Co-Design enables optimization across layers with a multi-domain view and thus unlocks new high-performance and energy efficient configurations. Although the co-design paradigm is becoming increasingly necessary in all fields of IC design, it is even more critical in 3D ICs where, as we show, the inter-layer coupling and higher degree of connectivity between components exacerbates the interdependence between architectural parameters, physical design parameters and the multitude of metrics of interest to the designer (i.e. power, performance, temperature and reliability). In this dissertation we present a framework for multi-domain co-simulation and co-optimization of 3D CPU architectures with both air and MF cooling solutions. Finally we propose an approach for design space exploration and modeling within the new Co-Design paradigm, and discuss the possible avenues for improvement of this work in the future

Enabling Technologies for 3D ICs: TSV Modeling and Analysis

Through silicon via (TSV) based three-dimensional (3D) integrated circuit (IC) aims to stack and interconnect dies or wafers vertically. This emerging technology offers a promising near-term solution for further miniaturization and the performance improvement of electronic systems and follows a more than Moore strategy. Along with the need for low-cost and high-yield process technology, the successful application of TSV technology requires further optimization of the TSV electrical modeling and design. In the millimeter wave (mmW) frequency range, the root mean square (rms) height of the TSV sidewall roughness is comparable to the skin depth and hence becomes a critical factor for TSV modeling and analysis. The impact of TSV sidewall roughness on electrical performance, such as the loss and impedance alteration in the mmW frequency range, is examined and analyzed following the second order small perturbation method. Then, an accurate and efficient electrical model for TSVs has been proposed considering the TSV sidewall roughness effect, the skin effect, and the metal oxide semiconductor (MOS) effect. However, the emerging application of 3D integration involves an advanced bio-inspired computing system which is currently experiencing an explosion of interest. In neuromorphic computing, the high density membrane capacitor plays a key role in the synaptic signaling process, especially in a spike firing analog implementation of neurons. We proposed a novel 3D neuromorphic design architecture in which the redundant and dummy TSVs are reconfigured as membrane capacitors. This modification has been achieved by taking advantage of the metal insulator semiconductor (MIS) structure along the sidewall, strategically engineering the fixed oxide charges in depletion region surrounding the TSVs, and the addition of oxide layer around the bump without changing any process technology. Without increasing the circuit area, these reconfiguration of TSVs can result in substantial power consumption reduction and a significant boost to chip performance and efficiency. Also, depending on the availability of the TSVs, we proposed a novel CAD framework for TSV assignments based on the force-directed optimization and linear perturbation

Thermal, Power Delivery and Reliability Management for 3D ICS

Three-dimensional (3D) integration technology is promising to continuously improve the performance of electronic devices by vertically stacking multiple active layers and connecting them with Through-Silicon-Vias (TSVs). Meanwhile, the thermal and power integrity problems are exacerbated since the power flux in 3D integrated circuits (3D ICs) increases linearly with the number of stacked layers. Moreover, the TSV structure in 3D ICs introduces new reliability problems since TSVs are vulnerable to various failure mechanisms (e.g. electromigration) and the failure of power-ground TSVs will cause voltage drop thereby significantly degrading the performance of 3D ICs. To make things worse, the high temperature, thermal gradient and power load in 3D ICs accelerate the failure of TSVs. Therefore, in order to push the 3D integration technology to full commercialization, the thermal, power integrity and reliability problem should be properly addressed in both design-time and run-time. In 3D ICs, the heat flux will easily exceed the capability of the traditional air cooling. Therefore, several aggressive cooling methods are applied to remove heat from the 3D IC, which include micro-fluidic cooling, the phase change material based cooling etc. These cooling schemes are usually implemented close to the heat source to gain high heat removal capability, thus causing more challenges to the design of 3D ICs. Unfortunately, physical design tools for 3D ICs with those aggressive cooling methods are lack. In this thesis, we will focus on 3D ICs with micro-fluidic (MF) cooling. The physical design for this kind of 3D ICs involves complex trade-offs between the circuit performance, power delivery noise, and temperature. For example, both TSVs and micro-cavities for MF cooling are fabricated in the substrate region. Therefore, they will compete in space: the allocation of signal TSVs should avoid micro-cavities to realize a feasible design, thus enforcing more constraints to the physical placement of 3D ICs. Moreover, power delivery networks (PDNs) in 3D ICs are enabled by power-ground (P/G) TSVs. The number and distribution of P/G TSVs are also constrained by micro-cavities which will influence the power integrity of the 3D IC. In addition, the capability of MF cooling degrades downstream the flow of coolant thereby causing large in-layer temperature gradient. The spatial temperature variance will affect the reliability of 3D ICs. in order to avoid it, the gate/modules in 3D ICs should be placed properly. In order to address the trade-offs 3D ICs with MF cooling, different design-time methods for application specific ICs (ASICs) and field programmable gate arrays (FPGAs) are proposed, respectively. For 3D ASICs, we propose a co-design method that integrates the design of MF cooling heat sink and P/G TSVs to the physical placement for 3D ICs. Experiments on publicly available benchmarks show that using our method, we can achieve better results compared to the traditional sequential design flow. The case for 3D FPGAs is more complicated than ASICs since the routing and logic resources are fixed and the chip power and temperature is hard to estimate until the circuit is routed. Therefore, in this thesis, we first build a design space exploration (DSE) framework to study how MF cooling affects the design of 3D FPGAs. Following this, we utilize an existing 3D FPGA placement and routing tool to develop a cooling-aware placement framework for 3D FPGAs to reduce the temperature gradient. Since the activity of 3D ICs cannot be completely estimated at the design stage, the run-time management, besides design-time methods, is required to address the thermal, power and reliability problems in 3D ICs. However, the vertically stacked structure makes the run-time management for 3D ICs more complicated than 2D ICs. The major reason of this is that the power supply noise and temperature can be coupled across layers in 3D ICs. This means the activity of one layer may affect the performance and reliability of other layers through voltage/temperature coupling. As a result, we cannot perform run-time management for each layer (perhaps implemented with dierent chips) of 3D ICs separately as in 2D systems. Therefore, the space of control nodes will become larger and more complicated. To make things worse, the existing run-time management techniques have various drawbacks (e.g. large off-line characterization overhead, poor scalability etc. ), which needs more eort to improve. In this thesis, we propose a phase-driven Q-learning based run-time management technique which can tune the activity of the processor to maximize the 3D CPU performance subject to the reliability constraint

Skybridge-3D-CMOS: A Fine-Grained Vertical 3D-CMOS Technology Paving New Direction for 3D IC

2D CMOS integrated circuit (IC) technology scaling faces severe challenges that result from device scaling limitations, interconnect bottleneck that dominates power and performance, etc. 3D ICs with die-die and layer-layer stacking using Through Silicon Vias (TSVs) and Monolithic Inter-layer Vias (MIVs) have been explored in recent years to generate circuits with considerable interconnect saving for continuing technology scaling. However, these 3D IC technologies still rely on conventional 2D CMOS’s device, circuit and interconnect mindset showing only incremental benefits while adding new challenges reliability issues, robustness of power delivery network design and short-channel effects as technology node scaling. Skybridge-3D-CMOS (S3DC) is a fine-grained 3D IC fabric that uses vertically-stacked gates and 3D interconnections composed on vertical nanowires to yield orders of magnitude benefits over 2D ICs. This 3D fabric fully uses the vertical dimension instead of relying on a multi-layered 2D mindset. Its core fabric aspects including device, circuit-style, interconnect and heat-extraction components are co-architected considering the major challenges in 3D IC technology. In S3DC, the 3D interconnections provide greater routing capacity in both vertical and horizontal directions compared to conventional 3D ICs, which eliminates the routability issue in conventional 3D IC technology while enabling ultra-high density design and significant benefits over 2D. Also, the improved vertical routing capacity in S3DC is beneficial for achieving robust and high-density power delivery network (PDN) design while conventional 3D IC has design issues in PDN design due to limited routing resource in vertical direction. Additionally, the 3D gate-all-around transistor incorporating with 3D interconnect in S3DC enables significant SRAM design benefits and good tolerance of process variation compared to conventional 3D IC technology as well as 2D CMOS. The transistor-level (TR-L) monolithic 3D IC (M3D) is the state-of-the-art monolithic 3D technology which shows better benefits than other M3D approaches as well as the TSV-based 3D IC approach. The S3DC is evaluated in large-scale benchmark circuits with comparison to TR-L M3D as well as 2D CMOS. Skybridge yields up to 3x lower power against 2D with no routing congestion in benchmark circuits while TR-L M3D only has up-to 22% power saving with severe routing congestions in the design. The PDN design in S3DC show

A review of advances in pixel detectors for experiments with high rate and radiation

The Large Hadron Collider (LHC) experiments ATLAS and CMS have established hybrid pixel detectors as the instrument of choice for particle tracking and vertexing in high rate and radiation environments, as they operate close to the LHC interaction points. With the High Luminosity-LHC upgrade now in sight, for which the tracking detectors will be completely replaced, new generations of pixel detectors are being devised. They have to address enormous challenges in terms of data throughput and radiation levels, ionizing and non-ionizing, that harm the sensing and readout parts of pixel detectors alike. Advances in microelectronics and microprocessing technologies now enable large scale detector designs with unprecedented performance in measurement precision (space and time), radiation hard sensors and readout chips, hybridization techniques, lightweight supports, and fully monolithic approaches to meet these challenges. This paper reviews the world-wide effort on these developments.Comment: 84 pages with 46 figures. Review article.For submission to Rep. Prog. Phy

Study of the impact of lithography techniques and the current fabrication processes on the design rules of tridimensional fabrication technologies

Working for the photolithography tool manufacturer leader sometimes gives me the impression of how complex and specific is the sector I am working on. This master thesis topic came with the goal of getting the overall picture of the state-of-the-art: stepping out and trying to get a helicopter view usually helps to understand where a process is in the productive chain, or what other firms and markets are doing to continue improvingUniversidad de sevilla.Máster Universitario en Microelectrónica: Diseño y Aplicaciones de Sistemas Micro/Nanométrico

Ring-Based Resonant Standing Wave Oscillators for 3D Clocking Applications

Ring-based resonant standing wave oscillators have been shown to be a useful clocking tech-nique that can distribute and generate a high frequency, low skew, low power, and stable clock signal. By using through-silicon-vias, this type of standing wave oscillator can be used to gener-ate the clocking scheme for 3D integrated circuits. In this thesis, we propose the use of such 3D standing wave oscillators and show how independent 3D oscillators in different stacks can syn-chronize through the use of a redistribution layer stub. Inter-chip clock synchronization is then accomplished without the need for a PLL. In addition, we propose the first 3D ring-based resonant standing wave oscillator bootstrap and reset circuit to initialize and stop oscillation. Using a 3D ring-based resonant standing wave oscillator, we propose a ring-based data fabric for 3D stacked DRAM and compare the results with existing approaches such as High Bandwidth Memory (HBM) or Wide I/O memory. We show that our Memory Architecture using a Ring-based Scheme (MARS) can provide the increases in speed necessary to overcome current memory bottlenecks, and can scale effectively as future 3D stacks become larger. Our MARS can trade off power, throughput, and latency to match different application requirements. By using a narrow bus, and connecting it to all channels, the MARS8 can provide an alternative memory configuration with ∼ 6.9× lower power consumption than HBM, and ∼ 2.7× faster speeds than Wide I/O. Using multiple ring topologies in the same stack, the channel count can double from 8 to 16, and then to 32. This is possible since MARS uses about 4× fewer TSVs per channel than HBM or Wide I/O. This provides speeds up to ∼ 4.2× faster than traditional HBM. This scalable architecture allows higher throughput and faster system performance for next-generation DRAM. The MARS topology proposed in this thesis can be used in a variety of computing systems, from lightweight IoT to large-scale data centers

Reliability Analysis of Electrotechnical Devices

This is a book on the practical approaches of reliability to electrotechnical devices and systems. It includes the electromagnetic effect, radiation effect, environmental effect, and the impact of the manufacturing process on electronic materials, devices, and boards