Cell replication and redundancy elimination during placement for cycle time optimization

This paper presents a new timing driven approach for cell replication tailored to the practical needs of standard cell layout design. Cell replication methods have been studied extensively in the context of generic partitioning problems. However, until now it has remained unclear what practical benefit can be obtained from this concept in a realistic environment for timing driven layout synthesis. Therefore, this paper presents a timing driven cell replication procedure, demonstrates its incorporation into a standard cell placement and routing tool and examines its benefit on the final circuit performance in comparison with conventional gate or transistor sizing techniques. Furthermore, we demonstrate that cell replication can deteriorate the stuck-at fault testability of circuits and show that stuck-at redundancy elimination must be integrated into the placement procedure. Experimental results demonstrate the usefulness of the proposed methodology and suggest that cell replication should be an integral part of the physical design flow complementing traditional gate sizing techniques

Discrete Gate Sizing Methodologies for Delay, Area and Power Optimization

The modeling of an individual gate and the optimization of circuit performance has long been a critical issue in the VLSI industry. In this work, we first study of the gate sizing problem for today\u27s industrial designs, and explore the contributions and limitations of all the existing approaches, which mainly suffer from producing only continuous solutions, using outdated timing models or experiencing performance inefficiency. In this dissertation, we present our new discrete gate sizing technique which optimizes different aspects of circuit performance, including delay, area and power consumption. And our method is fast and efficient as it applies the local search instead of global exhaustive search during gate size selection process, which greatly reduces the search space and improves the computation complexity. In addition to that, it is also flexible with different timing models, and it is able to deal with the constraints of input/output slew and output load capacitance, under which very few previous research works were reported. We then propose a new timing model, which is derived from the classic Elmore delay model, but takes the features of modern timing models from standard cell library. With our new timing model, we are able to formulate the combinatorial discrete sizing problem as a simplified mathematical expression and apply it to existing Lagrangian relaxation method, which is shown to converge to optimal solution. We demonstrate that the classic Elmore delay model based gate sizing approaches can still be valid. Therefore, our work might provide a new look into the numerous Elmore delay model based research works in various areas (such as placement, routing, layout, buffer insertion, timing analysis, etc.)

Global and local properties of asynchronous circuits optimized for energy efficiency

In this paper we explore global and local properties of asynchronous circuits sized for the energy efficiency metric Et^2. We develop a theory that enables an abstract view on transistor sizing. These results allow us to accurately estimate circuit performance and compare circuit design choices at logic gate level without going through the costly sizing process. We estimate that the improvement in energy efficiency due to sizing is 2 to 3.5 times when compared to a design optimized for speed

An algorithm for transistor sizing in CMOS circuits

This paper describes a novel algorithm for automatic transistor sizing which is one technique for improving timing performance in CMOS circuits. The sizing algorithm is used to minimize area and power subject to timing constraints. We define the transistor sizing problem as a graph problem and use a non-linear optimization technique. The algorithm consists of three separate tasks: critical path analysis, transistor sizing and transistor desizing. The main contribution of the presented algorithm is that the delays of all paths in a given design can be tuned simultaneously to satisfy timing constraints. Furthermore, the minimal transistor area and minimal power dissipation under giving timing constraints can be achieved. Experimental results show that this approach has greater control over area/time tradeoffs than traditional sizing algorithms

Yield-driven power-delay-optimal CMOS full-adder design complying with automotive product specifications of PVT variations and NBTI degradations

We present the detailed results of the application of mathematical optimization algorithms to transistor sizing in a full-adder cell design, to obtain the maximum expected fabrication yield. The approach takes into account all the fabrication process parameter variations specified in an industrial PDK, in addition to operating condition range and NBTI aging. The final design solutions present transistor sizing, which depart from intuitive transistor sizing criteria and show dramatic yield improvements, which have been verified by Monte Carlo SPICE analysis

Multi-port Memory Design for Advanced Computer Architectures

In this thesis, we describe and evaluate novel memory designs for multi-port on-chip and off-chip use in advanced computer architectures. We focus on combining multi-porting and evaluating the performance over a range of design parameters. Multi-porting is essential for caches and shared-data systems, especially multi-core System-on-chips (SOC). It can significantly increase the memory access throughput. We evaluate FinFET voltage-mode multi-port SRAM cells using different metrics including leakage current, static noise margin and read/write performance. Simulation results show that single-ended multi-port FinFET SRAMs with isolated read ports offer improved read stability and flexibility over classical double-ended structures at the expense of write performance. By increasing the size of the access transistors, we show that the single-ended multi-port structures can achieve equivalent write performance to the classical double-ended multi-port structure for 9% area overhead. Moreover, compared with CMOS SRAM, FinFET SRAM has better stability and standby power. We also describe new methods for the design of FinFET current-mode multi-port SRAM cells. Current-mode SRAMs avoid the full-swing of the bitline, reducing dynamic power and access time. However, that comes at the cost of voltage drop, which compromises stability. The design proposed in this thesis utilizes the feature of Independent Gate (IG) mode FinFET, which can leverage threshold voltage by controlling the back gate voltage, to merge two transistors into one through high-Vt and low-Vt transistors. This design not only reduces the voltage drop, but it also reduces the area in multi-port current-mode SRAM design. For off-chip memory, we propose a novel two-port 1-read, 1-write (1R1W) phasechange memory (PCM) cell, which significantly reduces the probability of blocking at the bank levels. Different from the traditional PCM cell, the access transistors are at the top and connected to the bitline. We use Verilog-A to model the behavior of Ge2Sb2Te5 (GST: the storage component). We evaluate the performance of the two-port cell by transistor sizing and voltage pumping. Simulation results show that pMOS transistor is more practical than nMOS transistor as the access device when both area and power are considered. The estimated area overhead is 1.7�, compared to single-port PCM cell. In brief, the contribution we make in this thesis is that we propose and evaluate three different kinds of multi-port memories that are favorable for advanced computer architectures