1,213 research outputs found

    シリコンカーバイドパワーMOSFETsの破壊耐量ならびにそのメカニズムに関する研究

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    筑波大学 (University of Tsukuba)201

    Impact of Short-Circuit Events on the Remaining Useful Life of SiC MOSFETs and Mitigation Strategy

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    Short-Circuit Instabilities in Silicon IGBTs and Silicon Carbide Power MOSFETs

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    Advanced Modeling of SiC Power MOSFETs aimed to the Reliability Evaluation of Power Modules

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    A comprehensive study of the short-circuit ruggedness of silicon carbide power MOSFETs

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    The behavior of Silicon Carbide Power MOSFETs under stressful short circuit conditions is investigated in this paper. Illustration of two different short-circuit failure phenomena for Silicon Carbide Power MOSFETs are thoroughly reported. Experimental evidences and TCAD electro-thermal simulations are exploited to describe and discriminate the failure sources. Physical causes are finally investigated and explained by means of properly calibrated numerical investigations, and are reported along with their effects on devices short-circuit capability

    Failure analysis of a degraded 1.2 kV SiC MOSFET after short circuit at high temperature

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