Two-phase RTD-CMOS pipelined circuits

MOnostable-BIstable Logic Element (MOBILE) networks can be operated in a gate-level pipelined fashion (nanopipeline) allowing high through output. Resonant tunneling diode (RTD)-based MOBILE nanopipelined circuits have been reported using different clock schemes including a four-phase strategy and a single-phase clock scheme. In particular, significant power advantages of single-phase RTD-CMOS MOBILE circuits over pure CMOS have been shown. This letter compares the RTD-CMOS realizations using a single clock and a novel two-phase clock solution. Significant superior robustness and performance in terms of power and area are obtained for the two-phase implementations

Radiation damages in CMOS image sensors: testing and hardening challenges brought by deep sub-micrometer CIS processes

This paper presents a summary of the main results we observed after several years of study on irradiated custom imagers manufactured using 0,18 µm CMOS processes dedicated to imaging. These results are compared to irradiated commercial sensor test results provided by the Jet Propulsion Laboratory to enlighten the differences between standard and pinned photodiode behaviors. Several types of energetic particles have been used (gamma rays, X-rays, protons and neutrons) to irradiate the studied devices. Both total ionizing dose (TID) and displacement damage effects are reported. The most sensitive parameter is still the dark current but some quantum eficiency and MOSFET characteristics changes were also observed at higher dose than those of interest for space applications. In all these degradations, the trench isolations play an important role. The consequences on radiation testing for space applications and radiation-hardening-by-design techniques are also discussed

Integrating 'atomistic', intrinsic parameter fluctuations into compact model circuit analysis

MOSFET parameter fluctuations, resulting from the 'atomistic' granular nature of matter, are predicted to be a critical roadblock to the scaling of devices in future electronic systems. A methodology is presented which allows compact model based circuit analysis tools to exploit the results of 'atomistic' device simulation, allowing investigation of the effects of such fluctuations on circuits and systems. The methodology is applied to a CMOS inverter, ring oscillator, and analogue NMOS current mirror as simple initial examples of its efficacy

Advancing Hardware Security Using Polymorphic and Stochastic Spin-Hall Effect Devices

Protecting intellectual property (IP) in electronic circuits has become a serious challenge in recent years. Logic locking/encryption and layout camouflaging are two prominent techniques for IP protection. Most existing approaches, however, particularly those focused on CMOS integration, incur excessive design overheads resulting from their need for additional circuit structures or device-level modifications. This work leverages the innate polymorphism of an emerging spin-based device, called the giant spin-Hall effect (GSHE) switch, to simultaneously enable locking and camouflaging within a single instance. Using the GSHE switch, we propose a powerful primitive that enables cloaking all the 16 Boolean functions possible for two inputs. We conduct a comprehensive study using state-of-the-art Boolean satisfiability (SAT) attacks to demonstrate the superior resilience of the proposed primitive in comparison to several others in the literature. While we tailor the primitive for deterministic computation, it can readily support stochastic computation; we argue that stochastic behavior can break most, if not all, existing SAT attacks. Finally, we discuss the resilience of the primitive against various side-channel attacks as well as invasive monitoring at runtime, which are arguably even more concerning threats than SAT attacks.Comment: Published in Proc. Design, Automation and Test in Europe (DATE) 201

A neuromorphic systems approach to in-memory computing with non-ideal memristive devices: From mitigation to exploitation

Memristive devices represent a promising technology for building neuromorphic electronic systems. In addition to their compactness and non-volatility features, they are characterized by computationally relevant physical properties, such as state-dependence, non-linear conductance changes, and intrinsic variability in both their switching threshold and conductance values, that make them ideal devices for emulating the bio-physics of real synapses. In this paper we present a spiking neural network architecture that supports the use of memristive devices as synaptic elements, and propose mixed-signal analog-digital interfacing circuits which mitigate the effect of variability in their conductance values and exploit their variability in the switching threshold, for implementing stochastic learning. The effect of device variability is mitigated by using pairs of memristive devices configured in a complementary push-pull mechanism and interfaced to a current-mode normalizer circuit. The stochastic learning mechanism is obtained by mapping the desired change in synaptic weight into a corresponding switching probability that is derived from the intrinsic stochastic behavior of memristive devices. We demonstrate the features of the CMOS circuits and apply the architecture proposed to a standard neural network hand-written digit classification benchmark based on the MNIST data-set. We evaluate the performance of the approach proposed on this benchmark using behavioral-level spiking neural network simulation, showing both the effect of the reduction in conductance variability produced by the current-mode normalizer circuit, and the increase in performance as a function of the number of memristive devices used in each synapse.Comment: 13 pages, 12 figures, accepted for Faraday Discussion

Characterization-Based Modeling of Retriggering and Afterpulsing for Passively Quenched CMOS SPADs

The current trend in the design of systems based on CMOS SPADs is to adopt smaller technological nodes, allowing the co-integration of additional electronics for the implementation of complex digital systems on chip. Due to their simplicity, a way to reduce the area occupied by the integrated electronics is the use of passive quenching circuits (PQCs) instead of active (AQCs) or mixed (MQCs) ones. However, the recharge phase in PQCs is slower, so the device can be retriggered before this phase ends. This paper studies the phenomena of afterpulsing and retriggering, depending on the characteristics of the SPADs and the working conditions. In order to do that, a test chip containing SPADs of different size has been characterized in several operating environments. A mathematical model has been proposed for fitting afterpulsing phenomenon. It is shown that retriggering can be also described in terms of this model, suggesting that it is linked to carriers trapped in the shallow levels of the semiconductor and that should be taken into account when considering the total amount of afterpulsing events.Junta de Andalucía TIC 233

Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose

Several Pinned Photodiode (PPD) CMOS Image Sensors (CIS) are designed, manufactured, characterized and exposed biased to ionizing radiation up to 10 kGy(SiO2 ). In addition to the usually reported dark current increase and quantum efficiency drop at short wavelengths, several original radiation effects are shown: an increase of the pinning voltage, a decrease of the buried photodiode full well capacity, a large change in charge transfer efficiency, the creation of a large number of Total Ionizing Dose (TID) induced Dark Current Random Telegraph Signal (DC-RTS) centers active in the photodiode (even when the Transfer Gate (TG) is accumulated) and the complete depletion of the Pre-Metal Dielectric (PMD) interface at the highest TID leading to a large dark current and the loss of control of the TG on the dark current. The proposed mechanisms at the origin of these degradations are discussed. It is also demonstrated that biasing (i.e., operating) the PPD CIS during irradiation does not enhance the degradations compared to sensors grounded during irradiation

Meeting the design challenges of nano-CMOS electronics: an introduction to an upcoming EPSRC pilot project

The years of ‘happy scaling’ are over and the fundamental challenges that the semiconductor industry faces, at both technology and device level, will impinge deeply upon the design of future integrated circuits and systems. This paper provides an introduction to these challenges and gives an overview of the Grid infrastructure that will be developed as part of a recently funded EPSRC pilot project to address them, and we hope, which will revolutionise the electronics design industry