Optimal Decentralized Protocols for Electric Vehicle Charging

We propose decentralized algorithms for optimally scheduling electric vehicle charging. The algorithms exploit the elasticity and controllability of electric vehicle related loads in order to fill the valleys in electric demand profile. We formulate a global optimization problem whose objective is to impose a generalized notion of valley-filling, study properties of the optimal charging profiles, and give decentralized offline and online algorithms to solve the problem. In each iteration of the proposed algorithms, electric vehicles choose their own charging profiles for the rest horizon according to the price profile broadcast by the utility, and the utility updates the price profile to guide their behavior. The offline algorithms are guaranteed to converge to optimal charging profiles irrespective of the specifications (e.g., maximum charging rate and deadline) of electric vehicles at the expense of a restrictive assumption that all electric vehicles are available for negotiation at the beginning of the planning horizon. The online algorithms relax this assumption by using a scalar prediction of future total charging demand at each time instance and yield near optimal charging profiles. The proposed algorithms need no coordination among the electric vehicles, hence their implementation requires low communication and computation capability. Simulation results are provided to support these results

Deep levels in a-plane, high Mg-content MgxZn1-xO epitaxial layers grown by molecular beam epitaxy

Deep level defects in n-type unintentionally doped a-plane MgxZn1−xO, grown by molecular beam epitaxy on r-plane sapphire were fully characterized using deep level optical spectroscopy (DLOS) and related methods. Four compositions of MgxZn1−xO were examined with x = 0.31, 0.44, 0.52, and 0.56 together with a control ZnO sample. DLOS measurements revealed the presence of five deep levels in each Mg-containing sample, having energy levels of Ec − 1.4 eV, 2.1 eV, 2.6 V, and Ev + 0.3 eV and 0.6 eV. For all Mg compositions, the activation energies of the first three states were constant with respect to the conduction band edge, whereas the latter two revealed constant activation energies with respect to the valence band edge. In contrast to the ternary materials, only three levels, at Ec − 2.1 eV, Ev + 0.3 eV, and 0.6 eV, were observed for the ZnO control sample in this systematically grown series of samples. Substantially higher concentrations of the deep levels at Ev + 0.3 eV and Ec − 2.1 eV were observed in ZnO compared to the Mg alloyed samples. Moreover, there is a general invariance of trap concentration of the Ev + 0.3 eV and 0.6 eV levels on Mg content, while at least and order of magnitude dependency of the Ec − 1.4 eV and Ec − 2.6 eV levels in Mg alloyed samples

Monte Carlo model of electron energy degradation in a CO2 atmosphere

A Monte Carlo model has been developed to study the degradation of <1000 eV electrons in an atmosphere of CO2, which is one of the most abundant species in Mars' and Venus' atmospheres. The e-CO2 cross sections are presented in an assembled set along with their analytical representations. Monte Carlo simulations are carried out at several energies to calculate the "yield spectra", which embodied all the information related to electron degradation process and can be used to calculate "yield" (or population) for any inelastic process. The numerical yield spectra have been fitted analytically resulting in an analytical yield spectra (AYS). We have calculated the mean energy per ion pair and efficiencies for various inelastic processes, including the double and dissociative double ionization of \car\ and negative ion formation. The energy distribution of the secondary electrons produced per incident electron is also presented at few incident energies. The mean energy per ion pair for CO2 is 37.5 (35.8) eV at 200 (1000) eV, compared to experimental value 32.7 eV at high energies. Ionization is the dominant loss process at energies above 50 eV with contribution of ~50%. Among the excitation processes, 13.6 eV and 12.4 eV states are the dominant loss processes consuming ~28% energy above 200 eV. Around and below ionization threshold, 13.6 eV, 12.4 eV, and 11.1 eV, followed by 8.6 eV and 9.3 eV excitation states are important loss processes, while below 10 eV vibrational excitation dominates.Comment: 31 pages, 13 figure

Is your article EV-TRACKed?

The EV-TRACK knowledgebase is developed to cope with the need for transparency and rigour to increase reproducibility and facilitate standardization of extracellular vesicle (EV) research. The knowledgebase includes a checklist for authors and editors intended to improve the transparency of methodological aspects of EV experiments, allows queries and meta-analysis of EV experiments and keeps track of the current state of the art. Widespread implementation by the EV research community is key to its success

Sensitivity of an image plate system in the XUV (60 eV < E < 900 eV)

Phosphor imaging plates (IPs) have been calibrated and proven useful for quantitative x-ray imaging in the 1 to over 1000 keV energy range. In this paper we report on calibration measurements made at XUV energies in the 60 to 900 eV energy range using beamline 6.3.2 at the Advanced Light Source at Lawrence Berkeley National Laboratory. We measured a sensitivity of ~25 plus or minus 15 counts/pJ over the stated energy range which is compatible with the sensitivity of Si photodiodes that are used for time-resolved measurements. Our measurements at 900 eV are consistent with the measurements made by Meadowcroft et al. at ~1 keV.Comment: 7 pages, 2 figure

Thermal annealing behaviour on electrical properties of Pd/Ru Schottky contacts on n-type GaN

We have investigated the electrical properties of Pd/Ru Schottky contacts on n-GaN as a function of annealing temperature by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The Schottky barrier height of the as-deposited Pd/Ru contact is found to be 0.67 eV (I-V) and 0.79 eV (C-V), respectively. Measurements showed that the Schottky barrier height increased from 0.68 eV (I-V) and 0.80 eV (C-V) to 0.80 eV (I-V) and 0.96 eV (C-V) as the annealing temperature is varied from 200 °C to 300 °C. Upon annealing at 400 °C and 500 °C, the Schottky barrier height decreased to 0.73 eV (I-V) and 0.85 eV (C-V) and 0.72 eV (I-V) and 0.84 eV (C-V), respectively. It is noted that the barrier height further decreased to 0.59 eV (I-V) and 0.72 eV (C-V) when the contact is annealed at 600 °C. The change of Schottky barrier heights and ideality factors with annealing temperature may be due to the formation of interfacial compounds at the Ru/Pd/n-GaN interface. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/2788

Determination of Strong-Interaction Widths and Shifts of Pionic X-Rays with a Crystal Spectrometer

Pionic 3d-2p atomic transitions in F, Na, and Mg have been studied using a bent crystal spectrometer. The pionic atoms were formed in the production target placed in the external proton beam of the Space Radiation Effects Laboratory synchrocyclotron. The observed energies and widths of the transitions are E=41679(3) eV and Γ=21(8) eV, E=62434(18) eV and Γ=22(80) eV, E=74389(9) eV and Γ=67(35) eV, in F, Na, and Mg, respectively. The results are compared with calculations based on a pion-nucleus optical potential