A new technique for oil backstreaming contamination measurements

Due to the large size and the number of diffusion pumps, space simulation chambers cannot be easily calibrated by the usual test dome method for measuring backstreaming from oil diffusion pumps. In addition, location dependent contamination may be an important parameter of the test. The backstreaming contamination was measured in the Space Power Facility (SPF) near Sandusky, OH, the largest space simulation vacuum test chamber in the U.S.. Small clean silicon wafers placed at all desired measurement sites were used as contamination sensors. The facility used diffusion pumps with DC 705 oil. The thickness of the contamination oil film was measured using ellipsometry. Since the oil did not wet the silicon substrate uniformly, two analysis models were developed to measure the oil film: (1) continuous, homogeneous film; and (2) islands of oil with the islands varying in coverage fraction and height. In both cases, the contamination film refractive index was assumed to be that of DC 705. The second model improved the ellipsometric analysis quality parameter by up to two orders of magnitude, especially for the low coverage cases. Comparison of the two models shows that the continuous film model overestimates the oil volume by less than 50 percent. Absolute numbers for backstreaming are in good agreement with published results for diffusion pumps. Good agreement was also found between the ellipsometric results and measurements done by x-ray photoelectron spectroscopy (XPS) and by scanning electron microscopy (SEM) on examples exposed to the same vacuum runs

Lanthanide-assisted deposition of strongly electro-optic PZT thin films on silicon: toward integrated active nanophotonic devices

The electro-optical properties of lead zirconate titanate (PZT) thin films depend strongly on the quality and crystallographic orientation of the thin films. We demonstrate a novel method to grow highly textured PZT thin films on silicon using the chemical solution deposition (CSD) process. We report the use of ultrathin (5–15 nm) lanthanide (La, Pr, Nd, Sm) based intermediate layers for obtaining preferentially (100) oriented PZT thin films. X-ray diffraction measurements indicate preferentially oriented intermediate Ln2O2CO3 layers providing an excellent lattice match with the PZT thin films grown on top. The XRD and scanning electron microscopy measurements reveal that the annealed layers are dense, uniform, crack-free and highly oriented (>99.8%) without apparent defects or secondary phases. The EDX and HRTEM characterization confirm that the template layers act as an efficient diffusion barrier and form a sharp interface between the substrate and the PZT. The electrical measurements indicate a dielectric constant of ∼650, low dielectric loss of ∼0.02, coercive field of 70 kV/cm, remnant polarization of 25 μC/cm2, and large breakdown electric field of 1000 kV/cm. Finally, the effective electro-optic coefficients of the films are estimated with a spectroscopic ellipsometer measurement, considering the electric field induced variations in the phase reflectance ratio. The electro-optic measurements reveal excellent linear effective pockels coefficients of 110 to 240 pm/V, which makes the CSD deposited PZT thin film an ideal candidate for Si-based active integrated nanophotonic devices

Antireflective nanotextures for monolithic perovskite silicon tandem solar cells

Recently, we studied the effect of hexagonal sinusoidal textures on the reflective properties of perovskite silicon tandem solar cells using the finite element method FEM . We saw that such nanotextures, applied to the perovskite top cell, can strongly increase the current density utilization from 91 for the optimized planar reference to 98 for the best nanotextured device period 500 nm and peak to valley height 500 nm , where 100 refers to the Tiedje Yablonovitch limit. [D. Chen et al., J. Photonics Energy 8, 022601, 2018 , doi 10.1117 1.JPE.8.022601] In this manuscript we elaborate on some numerical details of that work we validate an assumption based on the Tiedje Yablonovitch limit, we present a convergence study for simulations with the finite element method, and we compare different configurations for sinusoidal nanotexture

Estimating Index of Refraction from Polarimetric Hyperspectral Imaging Measurements

Current material identification techniques rely on estimating reflectivity or emissivity which vary with viewing angle. As off-nadir remote sensing platforms become increasingly prevalent, techniques robust to changing viewing geometries are desired. A technique leveraging polarimetric hyperspectral imaging (P-HSI), to estimate complex index of refraction, N̂(ν̃), an inherent material property, is presented. The imaginary component of N̂(ν̃) is modeled using a small number of “knot” points and interpolation at in-between frequencies ν̃. The real component is derived via the Kramers-Kronig relationship. P-HSI measurements of blackbody radiation scattered off of a smooth quartz window show that N̂(ν̃) can be retrieved to within 0.08 RMS error between 875 cm−1 ≤ ν̃ ≤ 1250 cm−1. P-HSI emission measurements of a heated smooth Pyrex beaker also enable successful N̂(ν̃) estimates, which are also invariant to object temperature

The Development of Three-Intensity Measurement in PSA Ellipsometry and Photoelastic Modulation Ellipsometry

A three-intensity measurement technique in a polarizer-sample-analyzer (PSA) ellipsometry will be introduced. The alignment of the azimuth angle of polarizer and analyzer to the incident plane will be discussed. Its applications to measure the ellipsometric parameters for deducing the optical parameters will be stated. In addition to the PSA ellipsometry, one can insert a photoelastic modulator (PEM) in the PSA ellipsometry for developing a PEM ellipsometry. There is no moving part in the system and its measuring speed is only limited by a modulator. An in situ/real-time and post-flight ellipsometry can be established for monitoring the dynamically varying process

Metrology of Complex Refractive Index for Solids in the Terahertz Regime Using Frequency Domain Spectroscopy

Frequency domain spectroscopy allows an experimenter to establish optical properties of solids in a wide frequency band including the technically challenging 10 THz region, and in other bands enables metrological comparison between competing techniques. We advance a method for extracting the optical properties of high-index solids using only transmission-mode frequency domain spectroscopy of plane-parallel Fabry-Perot optical flats. We show that different data processing techniques yield different kinds of systematic error, and that some commonly used techniques have inherent systematic errors which are underappreciated. We use model datasets to cross-compare algorithms in isolation from experimental errors, and propose a new algorithm which has qualitatively different systematic errors to its competitors. We show that our proposal is more robust to experimental non-idealities such as noise or apodization, and extract the complex refractive index spectrum of crystalline silicon as a practical example. Finally, we advance the idea that algorithms are complementary rather than competitive, and should be used together as part of a toolbox for better metrology.Comment: 21 pages, 11 figures, 4 appendice

Strong field excitation of electrons into localized states of fused silica

Although amorphous dielectrics feature localized states in the conduction band, electrons excited by highly intense laser radiation are usually considered as nearly free. However, localized or nearly free electrons would result in significantly different optical properties of the material. Therefore, this thesis investigates the transient complex refractive index of amorphous fused silica during the interaction with ultrashort pulsed laser radiation by applying spectroscopic imaging pump-probe ellipsometry. A Drude model, describing the excited electrons as a nearly free electron gas, and a Lorentz model, which considers the excited electrons as bound in localized states, are then approximated to the measured transient complex refractive index. The Lorentz model replicates the experimental data very well in the considered temporal range up to 200 fs after irradiation, whereas the Drude model significantly differs. Hence, the electrons are excited into localized states first, and are not describable as nearly free upon irradiation.Obwohl amorphe Dielektrika lokalisierte Zustände im Leitungsband aufweisen, werden Elektronen, die durch hoch intensive Laserstrahlung angeregt werden, üblicherweise als quasifrei betrachtet. Im Gegensatz zu quasifreien Elektronen würden lokalisierte Elektronen jedoch zu deutlich anderen transienten optischen Eigenschaften des Materials führen. Daher wird in dieser Arbeit der transiente komplexe Brechungsindex von amorphem Quarzglas während der Wechselwirkung mit ultrakurz gepulster Laserstrahlung mittels spektroskopischer, abbildender Pump-Probe Ellipsometrie untersucht. Jeweils ein Drude-Modell, das die angeregten Elektronen als ein quasifreies Elektronengas beschreibt, und ein Lorentz-Modell, welches die angeregten Elektronen als in lokalisierten Zuständen gebunden betrachtet, werden anschließend mit dem gemessenen transienten komplexen Brechungsindex verglichen. Das Lorentz-Modell repliziert die experimentellen Daten im betrachteten Zeitbereich bis zu 200 fs nach der Bestrahlung sehr gut, während das Drude-Modell deutlich abweicht. Demnach werden die Elektronen zunächst in lokalisierte Zustände angeregt und können während und kurz nach der Bestrahlung nicht als quasifrei beschrieben werden

Carbon induced extreme ultraviolet (EUV) reflectance loss characterized using visible-light ellipsometry

Carbon deposition on extreme ultraviolet (EUV) optics was observed due to photon-induced dissociation of hydrocarbons in a EUV lithography environment. The reflectance loss of the multilayer mirror is determined by the carbon layer thickness and density. To study the influence of various forms of carbon, EUV-induced carbon, hot filament and e-beam evaporated carbon were deposited on EUV multilayer mirrors. Spectroscopic ellipsometry was used to determine the carbon layer thickness and the optical constants ranging from ultraviolet to near infrared. The carbon density (and thus reflectance loss) was determined from the optical constants using both Bruggeman's effective medium approximation and the Clausius–Mosotti equation. Both approaches result in a similar EUV reflectance loss, with an accuracy of about 4%. The application of this process to ultrathin carbon films is further discussed

Temperature-dependent optical properties of plasmonic titanium nitride thin films

Due to their exceptional plasmonic properties, noble metals such as gold and silver have been the materials of choice for the demonstration of various plasmonic and nanophotonic phenomena. However, noble metals' softness, lack of tailorability and low melting point along with challenges in thin film fabrication and device integration have prevented the realization of real-life plasmonic devices.In the recent years, titanium nitride (TiN) has emerged as a promising plasmonic material with good metallic and refractory (high temperature stable) properties. The refractory nature of TiN could enable practical plasmonic devices operating at elevated temperatures for energy conversion and harsh-environment industries such as gas and oil. Here we report on the temperature dependent dielectric functions of TiN thin films of varying thicknesses in the technologically relevant visible and near-infrared wavelength range from 330 nm to 2000 nm for temperatures up to 900 0C using in-situ high temperature ellipsometry. Our findings show that the complex dielectric function of TiN at elevated temperatures deviates from the optical parameters at room temperature, indicating degradation in plasmonic properties both in the real and imaginary parts of the dielectric constant. However, quite strikingly, the relative changes of the optical properties of TiN are significantly smaller compared to its noble metal counterparts. Using simulations, we demonstrate that incorporating the temperature-induced deviations into the numerical models leads to significant differences in the optical responses of high temperature nanophotonic systems. These studies hold the key for accurate modeling of high temperature TiN based optical elements and nanophotonic systems for energy conversion, harsh-environment sensors and heat-assisted applications.Comment: 23 pages, 9 figures and 5 table

Optical Characterization of Ceramic Thin Films: Applications in Low-temperature Solid Oxide Fuel-Cell Materials Research

Characterization of thin film solid oxide fuel-cell materials can be difficult due to the range of porosities in electrodes and electrolytes as well as the nano-sized pores and particles. In this study, optical characterization techniques such as ultraviolet-visible transmission and reflection spectrophotometry are illustrated as methods for achieving information about the film density from the film refractive index as well as the film thickness. These techniques were used to investigate the sintering process of colloidal CeO2 on sapphire substrates and polymeric precursor-derived ZrO2:16%Y (YSZ) thin films on silicon over the temperature range 400-1000 °C, and the results were compared with traditional characterization techniques such as electron microscopy, profilometry, ellipsometry, and x-ray diffraction line broadening analyses. Most of the techniques were in good agreement with the CeO2 grain size changing from 5-65 nm and the film thickness changing from 0.8-0.5 µm. Comparisons of transmission and reflection spectrophotometry with ellipsometry illustrated that scattering effects from the porous CeO2 films caused an overestimation of the refractive index from ellipsometry, but allowed for accurate grain size measurements from transmission and reflection data. Both techniques were in good agreement during the sintering of the YSZ thin films, with the density changing from 90-100% theoretical after heating between 400 and 800 °C