Solid State Circuits Technologies

The evolution of solid-state circuit technology has a long history within a relatively short period of time. This technology has lead to the modern information society that connects us and tools, a large market, and many types of products and applications. The solid-state circuit technology continuously evolves via breakthroughs and improvements every year. This book is devoted to review and present novel approaches for some of the main issues involved in this exciting and vigorous technology. The book is composed of 22 chapters, written by authors coming from 30 different institutions located in 12 different countries throughout the Americas, Asia and Europe. Thus, reflecting the wide international contribution to the book. The broad range of subjects presented in the book offers a general overview of the main issues in modern solid-state circuit technology. Furthermore, the book offers an in depth analysis on specific subjects for specialists. We believe the book is of great scientific and educational value for many readers. I am profoundly indebted to the support provided by all of those involved in the work. First and foremost I would like to acknowledge and thank the authors who worked hard and generously agreed to share their results and knowledge. Second I would like to express my gratitude to the Intech team that invited me to edit the book and give me their full support and a fruitful experience while working together to combine this book

Single Electron Devices and Circuit Architectures: Modeling Techniques, Dynamic Characteristics, and Reliability Analysis

The Single Electron (SE) technology is an important approach to enabling further feature size reduction and circuit performance improvement. However, new methods are required for device modeling, circuit behavior description, and reliability analysis with this technology due to its unique operation mechanism. In this thesis, a new macro-model of SE turnstile is developed to describe its physical characteristics for large-scale circuit simulation and design. Based on this model, several novel circuit architectures are proposed and implemented to further demonstrate the advantages of SE technique. The dynamic behavior of SE circuits, which is different from their CMOS counterpart, is also investigated using a statistical method. With the unreliable feature of SE devices in mind, a fast and recursive algorithm is developed to evaluate the reliability of SE logic circuits in a more efficient and effective manner

A Review of Bayesian Methods in Electronic Design Automation

The utilization of Bayesian methods has been widely acknowledged as a viable solution for tackling various challenges in electronic integrated circuit (IC) design under stochastic process variation, including circuit performance modeling, yield/failure rate estimation, and circuit optimization. As the post-Moore era brings about new technologies (such as silicon photonics and quantum circuits), many of the associated issues there are similar to those encountered in electronic IC design and can be addressed using Bayesian methods. Motivated by this observation, we present a comprehensive review of Bayesian methods in electronic design automation (EDA). By doing so, we hope to equip researchers and designers with the ability to apply Bayesian methods in solving stochastic problems in electronic circuits and beyond.Comment: 24 pages, a draft version. We welcome comments and feedback, which can be sent to [email protected]

Embedding Logic and Non-volatile Devices in CMOS Digital Circuits for Improving Energy Efficiency

abstract: Static CMOS logic has remained the dominant design style of digital systems for more than four decades due to its robustness and near zero standby current. Static CMOS logic circuits consist of a network of combinational logic cells and clocked sequential elements, such as latches and flip-flops that are used for sequencing computations over time. The majority of the digital design techniques to reduce power, area, and leakage over the past four decades have focused almost entirely on optimizing the combinational logic. This work explores alternate architectures for the flip-flops for improving the overall circuit performance, power and area. It consists of three main sections. First, is the design of a multi-input configurable flip-flop structure with embedded logic. A conventional D-type flip-flop may be viewed as realizing an identity function, in which the output is simply the value of the input sampled at the clock edge. In contrast, the proposed multi-input flip-flop, named PNAND, can be configured to realize one of a family of Boolean functions called threshold functions. In essence, the PNAND is a circuit implementation of the well-known binary perceptron. Unlike other reconfigurable circuits, a PNAND can be configured by simply changing the assignment of signals to its inputs. Using a standard cell library of such gates, a technology mapping algorithm can be applied to transform a given netlist into one with an optimal mixture of conventional logic gates and threshold gates. This approach was used to fabricate a 32-bit Wallace Tree multiplier and a 32-bit booth multiplier in 65nm LP technology. Simulation and chip measurements show more than 30% improvement in dynamic power and more than 20% reduction in core area. The functional yield of the PNAND reduces with geometry and voltage scaling. The second part of this research investigates the use of two mechanisms to improve the robustness of the PNAND circuit architecture. One is the use of forward and reverse body biases to change the device threshold and the other is the use of RRAM devices for low voltage operation. The third part of this research focused on the design of flip-flops with non-volatile storage. Spin-transfer torque magnetic tunnel junctions (STT-MTJ) are integrated with both conventional D-flipflop and the PNAND circuits to implement non-volatile logic (NVL). These non-volatile storage enhanced flip-flops are able to save the state of system locally when a power interruption occurs. However, manufacturing variations in the STT-MTJs and in the CMOS transistors significantly reduce the yield, leading to an overly pessimistic design and consequently, higher energy consumption. A detailed analysis of the design trade-offs in the driver circuitry for performing backup and restore, and a novel method to design the energy optimal driver for a given yield is presented. Efficient designs of two nonvolatile flip-flop (NVFF) circuits are presented, in which the backup time is determined on a per-chip basis, resulting in minimizing the energy wastage and satisfying the yield constraint. To achieve a yield of 98%, the conventional approach would have to expend nearly 5X more energy than the minimum required, whereas the proposed tunable approach expends only 26% more energy than the minimum. A non-volatile threshold gate architecture NV-TLFF are designed with the same backup and restore circuitry in 65nm technology. The embedded logic in NV-TLFF compensates performance overhead of NVL. This leads to the possibility of zero-overhead non-volatile datapath circuits. An 8-bit multiply-and- accumulate (MAC) unit is designed to demonstrate the performance benefits of the proposed architecture. Based on the results of HSPICE simulations, the MAC circuit with the proposed NV-TLFF cells is shown to consume at least 20% less power and area as compared to the circuit designed with conventional DFFs, without sacrificing any performance.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

Statistical Classification Based Modelling and Estimation of Analog Circuits Failure Probability

At nanoscales, variations in transistor parameters cause variations and unpredictability in the circuit output, and may ultimately cause a violation of the desired specifications, leading to circuit failure. The parametric variations in transistors occur due to limitations in the manufacturing process and are commonly known as process variations. Circuit simulation is a Computer-Aided Design (CAD) technique for verifying the behavior of analog circuits but exhibits incompleteness under the effects of process variations. Hence, statistical circuit simulation is showing increasing importance for circuit design to address this incompleteness problem. However, existing statistical circuit simulation approaches either fail to analyze the rare failure events accurately and efficiently or are impractical to use. Moreover, none of the existing approaches is able to successfully analyze analog circuits in the presence of multiple performance specifications in timely and accurate manner. Therefore, we propose a new statistical circuit simulation based methodology for modelling and estimation of failure probability of analog circuits in the presence of multiple performance metrics. Our methodology is based on an iterative way of estimating failure probability, employing a statistical classifier to reduce the number of simulations while still maintaining high estimation accuracy. Furthermore, a more practical classifier model is proposed for analog circuit failure probability estimation. Our methodology estimates an accurate failure probability even when the failures resulting from each performance metric occur simultaneously. The proposed methodology can deliver many orders of speedup compared to traditional Monte Carlo methods. Moreover, experimental results show that the methodology generates accurate results for problems with multiple specifications, while other approaches fail totally

A combined experimental and computational approach to investigate emergent network dynamics based on large-scale neuronal recordings

Sviluppo di un approccio integrato computazionale-sperimentale per lo studio di reti neuronali mediante registrazioni elettrofisiologich

Yield-Aware Leakage Power Reduction of On-Chip SRAMs

Leakage power dissipation of on-chip static random access memories (SRAMs) constitutes a significant fraction of the total chip power consumption in state-of-the-art microprocessors and system-on-chips (SoCs). Scaling the supply voltage of SRAMs during idle periods is a simple yet effective technique to reduce their leakage power consumption. However, supply voltage scaling also results in the degradation of the cells’ robustness, and thus reduces their capability to retain data reliably. This is particularly resulting in the failure of an increasing number of cells that are already weakened by excessive process parameters variations and/or manufacturing imperfections in nano-meter technologies. Thus, with technology scaling, it is becoming increasingly challenging to maintain the yield while attempting to reduce the leakage power of SRAMs. This research focuses on characterizing the yield-leakage tradeoffs and developing novel techniques for a yield-aware leakage power reduction of SRAMs. We first demonstrate that new fault behaviors emerge with the introduction of a low-leakage standby mode to SRAMs. In particular, it is shown that there are some types of defects in SRAM cells that start to cause failures only when the drowsy mode is activated. These defects are not sensitized in the active operating mode, and thus escape the traditional March tests. Fault models for these newly observed fault behaviors are developed and described in this thesis. Then, a new low-complexity test algorithm, called March RAD, is proposed that is capable of detecting all the drowsy faults as well as the simple traditional faults. Extreme process parameters variations can also result in SRAM cells with very weak data-retention capability. The probability of such cells may be very rare in small memory arrays, however, in large arrays, their probability is magnified by the huge number of bit-cells integrated on a single chip. Hence, it is critical also to account for such extremal events while attempting to scale the supply voltage of SRAMs. To estimate the statistics of such rare events within a reasonable computational time, we have employed concepts from extreme value theory (EVT). This has enabled us to accurately model the tail of the cell failure probability distribution versus the supply voltage. Analytical models are then developed to characterize the yield-leakage tradeoffs in large modern SRAMs. It is shown that even a moderate scaling of the supply voltage of large SRAMs can potentially result in significant yield losses, especially in processes with highly fluctuating parameters. Thus, we have investigated the application of fault-tolerance techniques for a more efficient leakage reduction of SRAMs. These techniques allow for a more aggressive voltage scaling by providing tolerance to the failures that might occur during the sleep mode. The results show that in a 45-nm technology, assuming 10% variation in transistors threshold voltage, repairing a 64KB memory using only 8 redundant rows or incorporating single error correcting codes (ECCs) allows for ~90% leakage reduction while incurring only ~1% yield loss. The combination of redundancy and ECC, however, allows to reach the practical limits of leakage reduction in the analyzed benchmark, i.e., ~95%. Applying an identical standby voltage to all dies, regardless of their specific process parameters variations, can result in too many cell failures in some dies with heavily skewed process parameters, so that they may no longer be salvageable by the employed fault-tolerance techniques. To compensate for the inter-die variations, we have proposed to tune the standby voltage of each individual die to its corresponding minimum level, after manufacturing. A test algorithm is presented that can be used to identify the minimum applicable standby voltage to each individual memory die. A possible implementation of the proposed tuning technique is also demonstrated. Simulation results in a 45-nm predictive technology show that tuning standby voltage of SRAMs can enhance data-retention yield by an additional 10%−50%, depending on the severity of the variations

Ultra-low-power SRAM design in high variability advanced CMOS

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2009.Cataloged from PDF version of thesis.Includes bibliographical references (p. 163-181).Embedded SRAMs are a critical component in modern digital systems, and their role is preferentially increasing. As a result, SRAMs strongly impact the overall power, performance, and area, and, in order to manage these severely constrained trade-offs, they must be specially designed for target applications. Highly energy-constrained systems (e.g. implantable biomedical devices, multimedia handsets, etc.) are an important class of applications driving ultra-low-power SRAMs. This thesis analyzes the energy of an SRAM sub-array. Since supply- and threshold-voltage have a strong effect, targets for these are established in order to optimize energy. Despite the heavy emphasis on leakage-energy, analysis of a high-density 256x256 sub-array in 45nm LP CMOS points to two necessary optimizations: (1) aggressive supply-voltage reduction (in addition to Vt elevation), and (2) performance enhancement. Important SRAM metrics, including read/write/hold-margin and read-current, are also investigated to identify trade-offs of these optimizations. Based on the need to lower supply-voltage, a 0.35V 256kb SRAM is demonstrated in 65nm LP CMOS. It uses an 8T bit-cell with peripheral circuit-assists to improve write-margin and bit-line leakage. Additionally, redundancy, to manage the increasing impact of variability in the periphery, is proposed to improve the area-offset trade-off of sense-amplifiers, demonstrating promise for highly advanced technology nodes. Based on the need to improve performance, which is limited by density constraints, a 64kb SRAM, using an offset-compensating sense-amplifier, is demonstrated in 45nm LP CMOS with high-density 0.25[mu]m2 bit-cells.(cont.) The sense-amplifier is regenerative, but non -strobed, overcoming timing uncertainties limiting performance, and it is single-ended, for compatibility with 8T cells. Compared to a conventional strobed sense-amplifier, it achieves 34% improvement in worst-case access-time and 4x improvement in the standard deviation of the access-time.by Naveen Verma.Ph.D

Circuit Design

Circuit Design = Science + Art! Designers need a skilled "gut feeling" about circuits and related analytical techniques, plus creativity, to solve all problems and to adhere to the specifications, the written and the unwritten ones. You must anticipate a large number of influences, like temperature effects, supply voltages changes, offset voltages, layout parasitics, and numerous kinds of technology variations to end up with a circuit that works. This is challenging for analog, custom-digital, mixed-signal or RF circuits, and often researching new design methods in relevant journals, conference proceedings and design tools unfortunately gives the impression that just a "wild bunch" of "advanced techniques" exist. On the other hand, state-of-the-art tools nowadays indeed offer a good cockpit to steer the design flow, which include clever statistical methods and optimization techniques.Actually, this almost presents a second breakthrough, like the introduction of circuit simulators 40 years ago! Users can now conveniently analyse all the problems (discover, quantify, verify), and even exploit them, for example for optimization purposes. Most designers are caught up on everyday problems, so we fit that "wild bunch" into a systematic approach for variation-aware design, a designer's field guide and more. That is where this book can help! Circuit Design: Anticipate, Analyze, Exploit Variations starts with best-practise manual methods and links them tightly to up-to-date automation algorithms. We provide many tractable examples and explain key techniques you have to know. We then enable you to select and setup suitable methods for each design task - knowing their prerequisites, advantages and, as too often overlooked, their limitations as well. The good thing with computers is that you yourself can often verify amazing things with little effort, and you can use software not only to your direct advantage in solving a specific problem, but also for becoming a better skilled, more experienced engineer. Unfortunately, EDA design environments are not good at all to learn about advanced numerics. So with this book we also provide two apps for learning about statistic and optimization directly with circuit-related examples, and in real-time so without the long simulation times. This helps to develop a healthy statistical gut feeling for circuit design. The book is written for engineers, students in engineering and CAD / methodology experts. Readers should have some background in standard design techniques like entering a design in a schematic capture and simulating it, and also know about major technology aspects

Cutting Edge Nanotechnology

The main purpose of this book is to describe important issues in various types of devices ranging from conventional transistors (opening chapters of the book) to molecular electronic devices whose fabrication and operation is discussed in the last few chapters of the book. As such, this book can serve as a guide for identifications of important areas of research in micro, nano and molecular electronics. We deeply acknowledge valuable contributions that each of the authors made in writing these excellent chapters