264 research outputs found

    An Icepak-PSpice Co-Simulation Method to Study the Impact of Bond Wires Fatigue on the Current and Temperature Distribution of IGBT Modules under Short-Circuit

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    Bond wires fatigue is one of the dominant failure mechanisms of IGBT modules. Prior-art research mainly focuses on its impact on the end-of-life failure, while its effect on the short-circuit capability of IGBT modules is still an open issue. This paper proposes a new electro-thermal simulation approach enabling analyze the impact of the bond wires fatigue on the current and temperature distribution on IGBT chip surface under short-circuit. It is based on an Icepack-PSpice co-simulation by taking the advantage of both a finite element thermal model and an advanced PSpice-based multi-cell IGBT model. A study case on a 1700 V/1000 A IGBT module demonstrates the effectiveness of the proposed simulation method

    Fast and Accurate Icepak-PSpice Co-Simulation of IGBTs under Short-Circuit with an Advanced PSpice Model

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    Impact of Solder Degradation on VCE of IGBT Module: Experiments and Modeling

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    Modular assembly of a single phase inverter based on integrated functional block

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    This paper presents an original modular plug-in type assembly approach for a single phase-inverter. The main focus here is, indicatively, on the power range 1-20 kW, but the methodology can be transferred to higher power levels, too. At the core of the inverter lies a power-dense double-sided-cooled half-bridge power switch architecture with integrated cooler, which is interconnected to filter elements, gate-driver and control circuitry by means of compact flat connectors. The integration exercise targets, on the one hand, the optimization of the power switch performance and reliability, as well as the reduction of circuit parasitic elements; on the other, the production of a system compatible with maintenance and repairing, featuring minimized impact of single component failure on the system maintenance and repair cost and thus on its availability. Preliminary experimental tests demonstrate the nominal functionality of the inverter

    Advanced Modeling of SiC Power MOSFETs aimed to the Reliability Evaluation of Power Modules

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    Converter- and Module-level Packaging for High Power Density and High Efficiency Power Conversion

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    Advancements in the converter- and module-level packaging will be the key for the development of the emerging high-power, high power-density, high-eciency power conversion applications, such as traction, shipboards, more-electric-aircraft, and locomotive. Wide bandgap (WBG) devices such as silicon carbide (SiC) MOSFET attract much attention in these applications for their fast switching speeds, resulting in low loss and a consequent possibility for high switching frequency to increase the power density. However, for high-current, high power implementations, WBG devices are still available in small die sizes. Multiple SiC devices need to be connected in parallel to replace a large IGBT die. It is challenging to realize high-switching-frequency and low loss with a lot of parallel devices due to the inherent parameter dierences, which lead to unbalanced dynamic current sharing resulting in unequal temperature distribution and overstress. Apart from the technical challenges, the price of SiC modules is another roadblock for its widespread application. The paralleling of a large number of SiC chips in the module to handle high current increases the module cost. Hence, this work proposes a Si-IGBT and SiC-MOSFET-based hybrid switch solution. For a converter-level packaging, the device technology, available device package, and orientation of the pins are the essential governing factors. This work addresses the converter-level packaging, which is referred to as a power electronics building block, of the proposed hybrid switch, combining discrete packages and frame-based modules for the devices and a singlephase three-level T-type topology. The primary optimization objective for converter-level packaging includes low inductance busbar design, high eciency, and high specic and volumetric power density. Overall implementation is not trivial; however, this work achieves an optimum design compared to the state-of-the-art. The module-level packaging challenges are dependent on the type of device technology and topology. Reducing the parasitic inductances, capacitances, and the junction to case thermal resistance are the optimization objectives in module packaging. Given the intended application of the module, achieving a high-reliability module is also essential. This work includes a hybrid switch-based power module addressing the challenges of WBG module-level packaging and challenges specic to the hybrid switch. The availability of engineering samples of SiC MOSFETs with voltage ratings above 10 kV and commercialization in the future drive the module-level packaging of high voltage devices. High voltage power modules will support the development of future solid-state circuit breakers, transformers, and power conversion applications in shipboards and rolling stocks. The availability of these modules can eliminate the necessity of multilevel topologies. This work investigates and demonstrates the module-level packaging of HV (10-15 kV) SiC MOSFETs

    Multidisciplinary Cooling Design Tool for Electric Vehicle SiC Inverters Utilizing Transient 3D-CFD Computations

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    This paper proposes a new design tool that can be used for the development of a proper cooling component for high-power three-phase SiC module-packs for electric vehicles. Specifically, a multidisciplinary approach of the design process is presented that is based on the accurate electrical, thermal and fluid-mechanics modeling as well as computational testing of a high-power three-phase SiC modulepack under transient-load conditions, so that it can effectively meet the highly-demanding cooling requirements of an electric vehicle inverter. The cooling plate is initially designed by using steady-statebased 3D-computational-fluid-dynamic (CFD) tool, as in a conventional method. Then, the proposed design algorithm fine-tunes it through transient 3D-CFD computations by following a specific iterative improvement procedure considering the heat dissipation requirements for the SiC power switchesduring the official driving cycles for passenger vehicles and during abrupt acceleration tests under several ambient environments. Therefore, not only overheating at all operating conditions is avoided, but also, accurate thermal modeling of the individual inverter modules is provided that can be used forlifetime estimations and for calculating the overload capability of the inverter. The design improvement attained with the proposed procedure against the conventional steady-state approach is validated on a traction 450 A SiC inverter with the model of a real passenger vehicle

    Reduced-order electro-thermal models for computationally efficient thermal analysis of power electronics modules

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    Silicon and Silicon Carbide-based power module are common in power electronic systems used in a wide range of applications, including renewable energy, industrial drives and transportation. Reliability of power electronics converters is very important in many applications. It is well known that reliability and ultimately the lifetime of power modules is affected by the running temperature during power cycles. Although accurate thermal models of power electronics assemblies are widely available, based e.g. on computational fluid dynamics (CFD) solvers, their computational complexity hinders the application in real-time temperature monitoring applications. In the thesis, geometry-based numerical thermal models and compact thermal models will be developed to address the fast thermal simulation in the electronic design process and real-time temperature monitoring, respectively. Accurate geometry-based mathematical models for dynamic thermal analyses can be established with the help of finite difference methods (FDM). However, the computational complexity result from the fine mesh and large dimension of ordinary differential equations (ODE) system matrix makes a drawback on the analysis in parametric studies. In this thesis, a novel multi-parameter order reduction technique is proposed, which can significantly improve the simulation efficiency without having a significant impact on the prediction accuracy. Based on the block Arnoldi method, this method is illustrated by referring to the multi-chip power module connected with air-force cooling system including plate-fin heatsink. In real-time temperature monitoring, more compact tools might be preferable, especially if operating and boundary conditions such as losses and cooling are now known accurately, as it’s often the case in practical applications. Compared with geometry-based model which is more suitable in the design of power modules, lumped parameter thermal compact model is simpler and can be applied in real-time temperature prediction during the power cycles of power modules. This thesis proposes a reduced order state space observer to minimize the error caused by air temperature and air flow rate. Additionally, a novel feedback mechanism for disturbance estimation is introduced to compensate the effect result from the error of input power loss, air flow and changes of other nonlinearities

    Design and Evaluation of High Efficiency Power Converters Using Wide-Bandgap Devices for PV Systems

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    The shortage of fossil resources and the need for power generation options that produce little or no environmental pollution drives and motivates the research on renewable energy resources. Power electronics play an important role in maximizing the utilization of energy generation from renewable energy resources. One major renewable energy source is photovoltaics (PV), which comprises half of all recently installed renewable power generation in the world. For a grid-connected system, two power stages are needed to utilize the power generated from the PV source. In the first stage, a DCDC converter is used to extract the maximum power from the PV panel and to boost the low output voltage generated to satisfy the inverter side requirements. In the second stage, a DC-AC inverter is used to convert and deliver power loads for grid-tied applications. In general, PV panels have low efficiency so high-performance power converters are required to ensure highly efficient PV systems. The development of wide-bandgap (WBG) power switching devices, especially in the range of 650 V and 1200 V blocking class voltage, opens up the possibility of achieving a reliable and highly efficient grid-tied PV system. This work will study the benefits of utilizing WBG semiconductor switching devices in low power residential scale PV systems in terms of efficiency, power density, and thermal analysis. The first part of this dissertation will examine the design of a high gain DC-DC converter. Also, a performance comparison will be conducted between the SiC and Si MOSFET switching devices at 650 V blocking voltage regarding switching waveform behavior, switching and conduction losses, and high switching frequency operation. A major challenge in designing a transformerless inverter is the circulating of common mode leakage current in the absence of galvanic isolation. The value of the leakage current must be less than 300mA, per the DIN VDE 0126-1-1 standard. The second part of this work investigates a proposed high-efficiency transformerless inverter with low leakage current. Subsequently, the benefits of using SiC MOSFET are evaluated and compared to Si IGBT at 1200 V blocking voltage in terms of efficiency improvement, filter size reduction, and increasing power rating. Moreover, a comprehensive thermal model design is presented using COMSOL software to compare the heat sink requirements of both of the selected switching devices, SiC MOSFET and Si IGBT. The benchmarking of switching devices shows that SiC MOSFET has superior switching and conduction characteristics that lead to small power losses. Also, increasing switching frequency has a small effect on switching losses with SiC MOSFET due to its excellent switching characteristics. Therefore, system performance is found to be enhanced with SiC MOSFET compared to that of Si MOSFET and Si IGBET under wide output loads and switching frequency situations. Due to the high penetration of PV inverters, it is necessary to provide advanced functions, such as reactive power generation to enable connectivity to the utility grid. Therefore, this research proposes a modified modulation method to support the generation of reactive power. Additionally, a modified topology is proposed to eliminate leakage current
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