946 research outputs found

    Development and testing of a micromachined probe card.

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    This thesis is concerned with the design, fabrication and testing of micro scale probes. The probes were designed to act as temporary electrical connections to allow wafer level testing of integrated circuits. The work initially focused on the creation of free standing nickel cantilevers, angled up from the substrate with probe tips at the free end. These were fabricated using a novel method, combining pseudo grey scale lithography and thick photoresist sacrificial layers. Detailed analysis of the fabrication method, in particular the resist processing and lithography was undertaken and the limitations of the method explored.EThOS - Electronic Theses Online ServiceGBUnited Kingdo

    Micro-fabrication of bio-MEMS based force sensor to measure the force response of living cells

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    Understanding how a living cell behaves has become a very important topic in todayโ€™s research field. Hence, different sensors and testing devices have been designed to test the mechanical properties of these living cells. This thesis presents a method of micro-fabricating a bio-MEMS based force sensor which is used to measure the force response of living cells. Initially, the basic concepts of MEMS have been discussed and the different micro-fabrication techniques used to manufacture various MEMS devices have been described. There have been many MEMS based devices manufactured and employed for testing many nano-materials and bio-materials. Each of the MEMS based devices described in this thesis use a novel concept of testing the specimens. The different specimens tested are nano-tubes, nano-wires, thin film membranes and biological living cells. Hence, these different devices used for material testing and cell mechanics have been explained. The micro-fabrication techniques used to fabricate this force sensor has been described and the experiments preformed to successfully characterize each step in the fabrication have been explained. The fabrication of this force sensor is based on the facilities available at Michigan Technological University. There are some interesting and uncommon concepts in MEMS which have been observed during this fabrication. These concepts in MEMS which have been observed are shown in multiple SEM images

    MME2010 21st Micromechanics and Micro systems Europe Workshop : Abstracts

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    Scanning thermal microscopy using nanofabricated probes

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    Novel atomic force microscope (AFM) probes with integrated thin film thermal sensors are presented. Silicon micromachining and high resolution electron beam lithography (EBL) have been used to make batch fabricated, functionalised AFM probes. The AFM tips, situated at the ends of Si3N4 cantilevers, are shaped either as truncated pyramids or sharp triangular asperites. The former gives good thermalisation of the sensor to the specimen for flat specimens whereas the latter gives improved access to highly topographic specimens. Tip radii for the different probes are 1 m and 50 nm respectively. A variety of metal structures have been deposited on the tips using EBL and lift-off to form Au/Pd thermocouples and Pd resistance thermometer/heaters. Sensor dimensions down to 35 nm have been demonstrated. In the case of the sharp triangular tips, holes were etched into parts of the cantilever in order to provide self alignment of the sensor to the tip. On the pyramidal tips it has been shown that multiple sensors can be made on a single tip with good definition and matching between sensors. A conventional AFM was constructed in order to test the micromachined thermal probes. During scans of a photothermal test specimen using improved access thermocouple probes, 80 nm period metal gratings were thermally resolved. This is equivalent to a thermal lateral resolution of 40 nm. Pyramidal tips with a resistance thermometer/heater, which were made for the microscopy and analysis of polymers, have been showed by others to produce high resolution thermal conductivity images. The probes have also been shown to be capable of locally heating a polymer specimen and thermomechanically measuring phase changes in small volumes of material. Also presented here is a study of scanning thermal microscopy of semiconductor structures using a commercial AFM. Included are scans of several specimens using both commercial andthe new micromachined probes. Subsurface images of voids buried under a SiO2 passivation layer were taken. It is shown that contrast caused by thermal conductivity differences in the specimen may be detected at a depth of over 200 nm

    Advanced Atomic Force Microscopy: 3D Printed Micro-Optomechanical Sensor Systems

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    Design, Fabrication, Testing of CNT Based ISFET and Characterization of Nano/Bio Materials Using AFM

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    A combination of Carbon Nanotubes (CNTs) and Ion Selective Field Effect Transistor (ISFET) is designed and experimentally verified in order to develop the next generation ion concentration sensing system. Micro Electro-Mechanical System (MEMS) fabrication techniques, such as photolithography, diffusion, evaporation, lift-off, packaging, etc., are required in the fabrication of the CNT-ISFET structure on p-type silicon wafers. In addition, Atomic Force Microscopy (AFM) based surface nanomachining is investigated and used for creating nanochannels on silicon surfaces. Since AFM based nanomanipulation and nanomachining is highly controllable, nanochannels are precisely scratched in the area between the source and drain of the FET where the inversion layer is after the ISFET is activated. Thus, a bundle of CNTs are able to be aligned inside a single nanochannel by Dielectrophoresis (DEP) and the drain current is improved greatly due to CNTs` remarkable and unique electrical properties, for example, high current carrying capacity. ISFET structures with or without CNTs are fabricated and tested with different pH solutions. Besides the CNT-ISFET pH sensing system, this dissertation also presents novel AFM-based nanotechnology for learning the properties of chemical or biomedical samples in micro or nano level. Dimensional and mechanical property behaviors of Vertically Aligned Carbon Nanofibers (VACNFs) are studied after temperature and humidity treatment using AFM. Furthermore, mechanical property testing of biomedical samples, such as microbubbles and engineered soft tissues, using AFM based nanoindentation is introduced, and the methodology is of great directional value in the area

    ๋‹ค๊ธฐ๋Šฅ AFM์„ ํ†ตํ•œ ๊ณ ์œ ์ „์œจ ๋ฐ•๋ง‰์˜ ๊ณ ๊ธ‰ ๊ณ„์ธก ๋ฐ 3์ฐจ์› ๋ฆฌ์†Œ๊ทธ๋ž˜ํ”ผ๋ฅผ ์œ„ํ•œ ๋ฒŒ์ง€ ์ œ๊ฑฐ ์—ฐ๊ตฌ

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    ํ•™์œ„๋…ผ๋ฌธ (๋ฐ•์‚ฌ)-- ์„œ์šธ๋Œ€ํ•™๊ต ๋Œ€ํ•™์› : ์œตํ•ฉ๊ณผํ•™๊ธฐ์ˆ ๋Œ€ํ•™์› ์œตํ•ฉ๊ณผํ•™๋ถ€(๋‚˜๋…ธ์œตํ•ฉ์ „๊ณต), 2019. 2. ๊น€์—ฐ์ƒ.Scanning probe microscopy (SPM) is widely used to analyze the surface structures and properties of semiconductor and bio-molecular films. The merits of the SPM method are that it does not require any process for sample preparation and minimizes damages of the probing sample. Moreover, the growth of industries related to semiconductor and nano-bio devices has led to the development of nanotechnology. Many researchers now become aware of the importance of local variations, such as the local doping profiles of semiconductors, the work function of two-dimensional materials, the surface profiles of bio-molecular films, the diodic behavior of nanofluidic devices, the surface roughness of semiconductor thin films, and the distribution of local surface charge. Thus, the researchers are seeking appropriate SPM equipment to analyze the local variations. In recent years, atomic force microscopes have emerged that can perform various functions. Especially, low-noise atomic force microscopy can be used to measure linewidths of nanoscale next-generation semiconductors or inspection for ultra-thin films. Therefore, Korea Research Institute of Standards and Science has developed a low noise atomic force microscope considering the industrial application. As well as, it has been developed to perform sophisticated nano/micro patterns by adding the function of nano-indentation. The low-noise atomic force microscope avoids the installation of an internal stage due to the nature of the development background. Although it contributes significantly to the signal integrity of the low-noise atomic force microscope, it serves as a weakness to limit the scan area of the test sample. Therefore, it is essential to have an independent external stage to compensate the weakness. In this paper, we have developed the middle range moving stage for the measurements of the standard reference samples. The maximum travel length of the external 4-axis stage is 10 mm. For image scanning of a specific area of interest, the sample is positioned with micron accuracy through an external stage and then finely positioned using a PI XY piezo scanner. We confirmed that the position error of the developed stage can be ignored by the reproducibility experiment. Subsequently, the sidewall of the improved vertical parallel structure (IVPS) was measured. The repeatability and reproducibility (R&R) of the CD measurement was estimated using the CDR30-EBD tip. Finally, we found that the tip wear was minimized by measuring the TGX1 sample with the undercut structure. Thus, the development of independent external stages can be useful for many tasks that require large scanning areas. In the industrial semiconductor fabrication, the inspection of thin films is performed through optical equipment to check the uniformity of wafers. In the next-generation semiconductor industry, high-capacity and low-power devices with complex lithography patterns and ultra-thin insulating films are emerging. Therefore, in order to improve the yield of semiconductor devices, it is necessary to inspect not only the thickness of these thin films but also local variations. Indeed, the surface roughness of the semiconductor process may affect the formation of the ultrathin film, and even if the process of the ultra-thin films is optimized by the atomic layer deposition (ALD), the performance of the device may be degraded due to the roughened surface. Therefore, atomic force microscopy is the most suitable method for quantifying the properties of thin films and for analyzing the local surface structures. In this thesis, critical roughness (CR) was defined for the first time in a nanoscale by devising a roughness scaling process as a method for managing hafnium oxide film, which is a high-k insulating film of a MOS transistor. The surface roughness of the substrate was processed by a wet etching method, and an ALD process was used to obtain a hafnium oxide film. This is a study on the influence of the roughness of the lower layer on the roughness of the upper layer, and this definition makes it possible to present the criteria of the standard production in the in-line oxide film process. Moreover, we confirmed that the CR value defined in this study was effective by realizing the MIM diode structures with different roughness. Furthermore, new research methods were introduced through the indentation lithography. The first study suggests that nano- and micro-patterns can be formed on biofilms that is impracticable by electron beam lithography. The indentation method can be a means to compensate the weaknesses of electron beam lithography. The second study is to selectively remove the bulges generated during the indentation process. For many years, it was a quite important issue because the formation of the bulge was a major factor impeding the development of indentation technology. All in all, in this thesis, various research themes realized by the multi-functional AFM are presented. The new definition of the roughness contributed to the in-line process control. The patterned biofilm could be used as a standard sample of the TOF-SIMS imaging. The selective removal of the bulges suggested a new method for three-dimensional nanolithography. Therefore, this research is expected to be a cost effective technology in the industry and to be used in various research fields.์Šค์บ๋‹ ํ”„๋ฃจ๋ธŒ ํ˜„๋ฏธ๊ฒฝ (SPM)์€ ๋ฐ˜๋„์ฒด ๋ฐ ์ƒ์ฒด ๋ถ„์ž ํ•„๋ฆ„์˜ ํ‘œ๋ฉด ๊ตฌ์กฐ ๋ฐ ํŠน์„ฑ์„ ๋ถ„์„ํ•˜๋Š” ๋ฐ ๋„๋ฆฌ ์‚ฌ์šฉ๋œ๋‹ค. SPM ๋ฐฉ๋ฒ•์˜ ์žฅ์ ์€ ์‹œ๋ฃŒ ์ค€๋น„๋ฅผ ์œ„ํ•œ ์–ด๋– ํ•œ ๊ณต์ •๋„ ํ•„์š”๋กœ ํ•˜์ง€ ์•Š์œผ๋ฉฐ ์กฐ์‚ฌ ์‹œ๋ฃŒ์˜ ์†์ƒ์„ ์ตœ์†Œํ™”ํ•œ๋‹ค๋Š” ๊ฒƒ์ด๋‹ค. ๋˜ํ•œ, ๋ฐ˜๋„์ฒด ๋ฐ ๋‚˜๋…ธ ๋ฐ”์ด์˜ค ๋””๋ฐ”์ด์Šค์™€ ๊ด€๋ จ๋œ ์‚ฐ์—…์˜ ์„ฑ์žฅ์€ ๋‚˜๋…ธ ๊ธฐ์ˆ ์˜ ๋ฐœ์ „์œผ๋กœ ์ด์–ด์ง€๊ณ  ์žˆ๋‹ค. ๊ทธ๋ž˜์„œ ๋งŽ์€ ์—ฐ๊ตฌ์ž๋“ค์€ ๋ฐ˜๋„์ฒด์˜ ๊ตญ์†Œ ๋„ํ•‘ ํ”„๋กœํŒŒ์ผ, ๋ฐ˜๋„์ฒด ๋ฐ•๋ง‰์˜ ํ‘œ๋ฉด ๊ฑฐ์น ๊ธฐ, 2 ์ฐจ์› ์žฌ๋ฃŒ์˜ ์ผ ํ•จ์ˆ˜, ๊ตญ์†Œ ํ‘œ๋ฉด ์ „ํ•˜ ๋ถ„ํฌ, ์œ ๊ธฐ-๋ฐ”์ด์˜ค ๋ถ„์ž ๋ฐ•๋ง‰, ๋‚˜๋…ธ ์œ ์ฒด ์žฅ์น˜์˜ ํ‘œ๋ฉด ๋“ฑ์„ ๋ถ„์„ํ•˜๊ธฐ์œ„ํ•ด SPM ์žฅ๋น„๋ฅผ ํ™œ์šฉํ•˜๊ณ  ์žˆ๋‹ค. ์ตœ๊ทผ์—๋Š” ํ‘œ๋ฉด ๋ถ„์„ ๊ธฐ๋Šฅ๋ฟ๋งŒ ์•„๋‹ˆ๋ผ ์—ฌ๋Ÿฌ๊ฐ€์ง€ ๊ธฐ๋Šฅ์„ ์ˆ˜ํ–‰ํ•  ์ˆ˜ ์žˆ๋Š” ์›์ž๋ ฅ ํ˜„๋ฏธ๊ฒฝ๋“ค์ด ๋“ฑ์žฅํ•˜๊ณ  ์žˆ๋‹ค. ๊ทธ ์ค‘์—์„œ๋„ ์ €์†Œ์Œ ์›์ž๋ ฅ ํ˜„๋ฏธ๊ฒฝ์€ ๋‚˜๋…ธ ์Šค์ผ€์ผ์˜ ์ฐจ์„ธ๋Œ€ ๋ฐ˜๋„์ฒด ์„ ํญ์„ ์ธก์ •ํ•˜๊ฑฐ๋‚˜ ์ดˆ๋ฐ•๋ง‰์˜ ํ‘œ๋ฉด ๊ฒ€์‚ฌ์— ์ด์šฉ๋  ์ˆ˜ ์žˆ๋‹ค. ๋”ฐ๋ผ์„œ ์‚ฐ์—…์ ์ธ ์‘์šฉ์„ ๊ณ ๋ คํ•˜์—ฌ ํ•œ๊ตญํ‘œ์ค€๊ณผํ•™์—ฐ๊ตฌ์›์—์„œ๋Š” ์ €์†Œ์Œ ์›์ž๋ ฅ ํ˜„๋ฏธ๊ฒฝ์„ ๊ฐœ๋ฐœํ•˜์˜€๊ณ , ๋‚˜๋…ธ ์ธ๋ดํ…Œ์ด์…˜ ๊ธฐ๋Šฅ์„ ์ถ”๊ฐ€ํ•˜์—ฌ R&D ์ˆ˜์ค€์—์„œ ์ˆ˜์‹ญ ๋‚˜๋…ธ์˜ ์ •๊ตํ•œ ํŒจํ„ด์„ ํ˜•์„ฑํ•  ์ˆ˜ ์žˆ๋Š” ๊ณต์ • ๋ฐฉ๋ฒ•์„ ๊ฐœ๋ฐœํ•˜๊ณ  ์žˆ๋‹ค. ์ €์†Œ์Œ ์›์ž๋ ฅ ํ˜„๋ฏธ๊ฒฝ์€ ๊ฐœ๋ฐœ ๋ฐฐ๊ฒฝ์˜ ํŠน์„ฑ์ƒ ๋‚ด๋ถ€์ ์ธ ์‹œ๋ฃŒ ์ด๋™ ์Šคํ…Œ์ด์ง€์˜ ์„ค์น˜๋ฅผ ์ง€์–‘ํ•œ๋‹ค. ์ด๋Š” ์ €์†Œ์Œ ์›์ž๋ ฅ ํ˜„๋ฏธ๊ฒฝ์˜ ์ˆ˜์ทจ ์‹ ํ˜ธ ์•ˆ์ •์„ฑ์— ํฌ๊ฒŒ ๊ธฐ์—ฌํ•˜๋Š” ์ตœ์„ ์˜ ์„ ํƒ์ด๊ธด ํ•˜์ง€๋งŒ, ๊ฒ€์‚ฌ ์‹œ๋ฃŒ์˜ ์ธก์ • ์˜์—ญ์„ ์ถ•์†Œ์‹œํ‚ค๋Š” ์•ฝ์ ์œผ๋กœ ์ž‘์šฉํ•˜๊ณ  ์žˆ๋‹ค. ๋”ฐ๋ผ์„œ ์ด๋ฅผ ๋ณด์™„ํ•  ์ˆ˜ ์žˆ๋Š” ๋…๋ฆฝ์ ์ธ ์™ธ๋ถ€ ์Šคํ…Œ์ด์ง€๋Š” ํ•„์ˆ˜์ ์ด๋ผ๊ณ  ํ•  ์ˆ˜ ์žˆ๊ธฐ๋•Œ๋ฌธ์—, ์ด ๋…ผ๋ฌธ์—์„œ๋Š” ์ค‘๊ฑฐ๋ฆฌ ์ด๋™ ์Šคํ…Œ์ด์ง€ ๊ฐœ๋ฐœ์„ ํ†ตํ•ด ๊ธฐ์ค€ ์‹œ๋ฃŒ์˜ ์ž„๊ณ„ ์น˜์ˆ˜๋ฅผ ์ธก์ • ํ•  ์ˆ˜ ์žˆ๋„๋ก ๊ฐœ๋ฐœํ•˜์˜€๋‹ค. ์™ธ๋ถ€ 4 ์ถ• ์Šคํ…Œ์ด์ง€์˜ ์ตœ๋Œ€ ์ด๋™ ๊ธธ์ด๋Š” 10 mm์ด๋ฉฐ, ํŠน์ • ๋Œ€์ƒ ์˜์—ญ์˜ ์ด๋ฏธ์ง€ ์Šค์บ๋‹์˜ ๊ฒฝ์šฐ, ์ƒ˜ํ”Œ์„ ์™ธ๋ถ€ ์Šคํ…Œ์ด์ง€๋ฅผ ํ†ตํ•ด ๋งˆ์ดํฌ๋ก  ์ •ํ™•๋„์˜ ์œ„์น˜ ์ง€์ •์„ ๊ฑฐ์นœ ํ›„, PI XY piezo ์Šค์บ๋„ˆ๋ฅผ ์ด์šฉํ•˜์—ฌ ๋ฏธ์„ธ ์œ„์น˜ ์„ค์ •์„ ํ•œ๋‹ค. ๊ฐœ๋ฐœ๋œ ์Šคํ…Œ์ด์ง€์˜ ์œ„์น˜ ์—๋Ÿฌ๋Š” ์žฌํ˜„์„ฑ ์‹คํ—˜์„ ํ†ตํ•ด ๋ฌด์‹œํ•  ์ˆ˜ ์žˆ์Œ์„ ํ™•์ธํ•˜์˜€๋‹ค. ์ด์–ด์„œ, ๊ฐœ์„ ๋œ ์ˆ˜์ง ํ‰ํ–‰ ๊ตฌ์กฐ(IVPS)์˜ ์ธก๋ฒฝ์„ ์ธก์ •ํ•˜๊ณ  CD ์ธก์ •์˜ ๋ฐ˜๋ณต์„ฑ ๋ฐ ์žฌํ˜„์„ฑ์„ CDR30-EBD ํŒ์„ ์‚ฌ์šฉํ•˜์—ฌ ์ถ”์ •ํ•˜์˜€๋‹ค. ๋งˆ์ง€๋ง‰์œผ๋กœ, ๋Œ์ถœ ๊ตฌ์กฐ๋กœ ๋œ TGX1 ์ƒ˜ํ”Œ์„ ์ธก์ •ํ•˜์—ฌ ํŒ ๋งˆ๋ชจ๋ฅผ ์ตœ์†Œํ™” ํ•  ์ˆ˜ ์žˆ์Œ์„ ํ™•์ธํ–ˆ๋‹ค. ๋”ฐ๋ผ์„œ ๋…๋ฆฝ์ ์ธ ์™ธ๋ถ€ ์Šคํ…Œ์ด์ง€์˜ ๊ฐœ๋ฐœ์€ ํ–ฅํ›„ ๋„“์€ ์˜์—ญ์„ ์Šค์บ”ํ•ด์•ผํ•˜๋Š” ์—ฌ๋Ÿฌ๊ฐ€์ง€ ์ž„๋ฌด์— ์œ ์šฉํ•˜๊ฒŒ ์ ์šฉ๋  ์ˆ˜ ์žˆ๋‹ค. ์‚ฐ์—…์˜ in-line ์‹œ์Šคํ…œ์—์„œ๋Š” ๋Œ€๋ฉด์  ์›จ์ดํผ์˜ ๊ท ์ผ๋„๋ฅผ ๊ฒ€์‚ฌํ•˜๊ธฐ ์œ„ํ•ด ๊ด‘ํ•™์ ์ธ ์ธก์ •์žฅ๋น„๋ฅผ ํ†ตํ•ด ๋ฐ•๋ง‰ ๊ฒ€์‚ฌ๋ฅผ ์ˆ˜ํ–‰ํ•œ๋‹ค. ํ•˜์ง€๋งŒ ์ตœ๊ทผ ์ฐจ์„ธ๋Œ€ ๋ฐ˜๋„์ฒด ์‚ฐ์—…์—์„œ๋Š” ๊ณ ์šฉ๋Ÿ‰ ๋ฐ ์ €์ „๋ ฅ ๋””๋ฐ”์ด์Šค์˜ ์ถœํ˜„์œผ๋กœ ๋ฆฌ์†Œ๊ทธ๋ž˜ํ”ผ ํŒจํ„ด์ด ์ ์  ๋ณต์žกํ•ด์ง€๊ณ  ์ ˆ์—ฐ์ฒด ๋ฐ•๋ง‰์˜ ๋‘๊ป˜๋Š” ์ˆ˜ ๋‚˜๋…ธ ๋ฏธํ„ฐ์—์„œ ์„œ๋ธŒ ๋‚˜๋…ธ ๋ฏธํ„ฐ ๋ฒ”์œ„๋กœ ์ถ•์†Œ๋˜๊ณ  ์žˆ๋‹ค. ๋”ฐ๋ผ์„œ ๊ฐ€๊นŒ์šด ๋ฏธ๋ž˜์˜ in-line ๊ณต์ •์—์„œ๋Š” ๋ฐ˜๋„์ฒด ์žฅ์น˜์˜ ์ƒ์‚ฐ ์ˆ˜์œจ ํ–ฅ์ƒ์„ ์œ„ํ•ด์„œ, ์ด๋“ค ๋ฐ•๋ง‰์˜ ๋‘๊ป˜๋ฟ๋งŒ ์•„๋‹ˆ๋ผ 3์ฐจ์› (3D) ํ‘œ๋ฉด ์ •๋ณด๋ฅผ ๊ฒ€์‚ฌํ•˜๋Š” ๊ฒƒ์ด ํ•„์š”ํ•ด์ง€๊ณ  ์žˆ๋‹ค. ์‹ค์ œ ๋ฐ˜๋„์ฒด ๊ณต์ •์„ ๊ฑฐ์นœ ํ‘œ๋ฉด์˜ ๊ฑฐ์น ๊ธฐ๋Š” ํ–ฅํ›„ ์ดˆ๋ฐ•๋ง‰ ๊ณต์ •์— ์˜ํ–ฅ์„ ๋ฏธ์น˜๊ธฐ๋„ ํ•˜๋ฉฐ, ํ‘œ๋ฉด์ด ๊ฑฐ์นœ ์ƒํƒœ์—์„œ๋Š” ์›์ž์ธต ์ฆ์ฐฉ๋ฒ•(atomic layer deposition, ALD)์— ์˜ํ•ด ์ดˆ๋ฐ•๋ง‰ ๊ณต์ •์ด ์ตœ์ ํ™”๋˜์–ด ์žˆ๋‹คํ•˜๋”๋ผ๋„ ์†Œ์ž์— ์˜ํ–ฅ์„ ์ค„ ์ˆ˜ ์žˆ๊ธฐ ๋•Œ๋ฌธ์ด๋‹ค. ๋”ฐ๋ผ์„œ ๋ฐ•๋ง‰์˜ ์„ฑ์งˆ์„ ์ •๋Ÿ‰ํ™”ํ•˜๊ณ  ๊ตญ์†Œ์  ํ‘œ๋ฉด ๊ตฌ์กฐ๋ฅผ ๋ถ„์„ํ•˜๊ธฐ์œ„ํ•ด์„œ๋Š” ์›์ž๋ ฅ ํ˜„๋ฏธ๊ฒฝ์ด ๊ฐ€์žฅ ์ ํ•ฉํ•œ ๋ถ„์„๋ฒ•์ด๋ผ๊ณ  ํ•  ์ˆ˜ ์žˆ๋‹ค. ์ด ๋…ผ๋ฌธ์—์„œ๋Š” MOS ํŠธ๋ Œ์ง€์Šคํ„ฐ์˜ high-k ์ ˆ์—ฐ๋ง‰์ธ ํ•˜ํ”„๋Š„ ์‚ฐํ™”๋ง‰ ๊ณต์ •๊ด€๋ฆฌ๋ฅผ ์œ„ํ•œ ๋ฐฉ์•ˆ์œผ๋กœ roughness scaling method๋ฅผ ๊ณ ์•ˆํ•˜์—ฌ ๋‚˜๋…ธ ์Šค์ผ€์ผ์—์„œ ์ตœ์ดˆ๋กœ ์ž„๊ณ„๊ฑฐ์น ๊ธฐ(critical roughness, CR)์„ ์ •์˜ํ•˜์˜€๋‹ค. ๊ธฐํŒ์˜ ํ‘œ๋ฉด๊ฑฐ์น ๊ธฐ๋Š” ์Šต์‹ ์‹๊ฐ ๋ฐฉ์‹์œผ๋กœ ์ง„ํ–‰ํ•˜์˜€์œผ๋ฉฐ, ํ•˜ํ”„๋Š„ ์‚ฐํ™”๋ง‰์„ ์–ป๊ธฐ ์œ„ํ•ด ALD ๊ณต์ •์„ ์ด์šฉํ•˜์˜€๋‹ค. ์ด๋Š” ํ•˜๋ถ€ ์ธต์˜ ๊ฑฐ์น ๊ธฐ๊ฐ€ ์ƒ๋ถ€ ์ธต์˜ ๊ฑฐ์น ๊ธฐ์— ์ฃผ๋Š” ์˜ํ–ฅ์„ฑ์— ๋Œ€ํ•œ ์—ฐ๊ตฌ์ด๋ฉฐ, ์ด ์ •์˜๋ฅผ ํ†ตํ•ด in-line ์‚ฐํ™”๋ง‰ ๊ณต์ •์ƒ์—์„œ ์ƒ์‚ฐ๊ด€๋ฆฌ์˜ ๊ธฐ์ค€์„ ์ œ์‹œํ•  ์ˆ˜ ์žˆ๊ฒŒ ๋˜์—ˆ๋‹ค. ๊ทธ๋ฆฌ๊ณ  ์ดˆ๋ฐ•๋ง‰ ๊ฑฐ์น ๊ธฐ์— ๋”ฐ๋ฅธ MIM ๋‹ค์ด์˜ค๋“œ ๊ตฌ์กฐ๋ฅผ ์‹คํ˜„ํ•จ์œผ๋กœ์จ ์ด ์—ฐ๊ตฌ์—์„œ ์ •์˜๋œ CR๊ฐ’์ด ์‹คํšจ์„ฑ์„ ๊ฐ€์ง์„ ํ™•์ธํ•˜์˜€๋‹ค. ๋งˆ์ง€๋ง‰์œผ๋กœ ์ด ๋…ผ๋ฌธ์—์„œ๋Š” ๋‹ค๊ธฐ๋Šฅ์„ฑ ์›์žํ˜„๋ฏธ๊ฒฝ์„ ์ด์šฉํ•˜์—ฌ ๋‚˜๋…ธ ์ธ๋ดํ…Œ์ด์…˜ ๋ฆฌ์†Œ๊ทธ๋ž˜ํ”ผ ์—ฐ๊ตฌ๋ฅผ ์ง„ํ–‰ํ•˜์˜€๋‹ค. ๊ทธ ์ฒซ๋ฒˆ์งธ ์—ฐ๊ตฌ๋Š” ์ „์ž๋น” ๋ฆฌ์†Œ๊ทธ๋ž˜ํ”ผ๋กœ๋Š” ์ œ์ž‘ํ•  ์ˆ˜ ์—†๋Š” ๋ฐ”์ด์˜ค ํ•„๋ฆ„ ์ƒ์— ๋‚˜๋…ธ ๋ฐ ๋งˆ์ดํฌ๋กœ ํŒจํ„ด์„ ํ˜•์„ฑํ•จ์œผ๋กœ์จ ์ „์ž๋น” ๋ฆฌ์†Œ๊ทธ๋ž˜ํ”ผ์˜ ์ทจ์•ฝ์ ์„ ๋ณด์™„ํ•  ์ˆ˜ ๊ณต์ • ๋ฐฉ๋ฒ•์ด ๋  ์ˆ˜ ์žˆ์Œ์„ ์ œ์‹œํ•˜๋Š” ๊ฒƒ์ด๋ฉฐ, ๋‘๋ฒˆ์งธ ์—ฐ๊ตฌ๋Š” ๋‚˜๋…ธ ์ธ๋ดํ…Œ์ด์…˜์˜ ๊ทผ๋ณธ์ ์ธ ๋ฌธ์ œ์ ์ธ ๋ฒŒ์ง€๋ฅผ ์„ ํƒ์ ์œผ๋กœ ์ œ๊ฑฐํ•˜๋Š” ์—ฐ๊ตฌ์ด๋‹ค. ์šฐ์„  ๋‹ค๊ธฐ๋Šฅ์„ฑ ์›์žํ˜„๋ฏธ๊ฒฝ ํ™œ์šฉ์˜ ์ฒซ๋ฒˆ์งธ ์—ฐ๊ตฌ๋กœ๋Š” ๋ฐ”์ด์˜ค ํ•„๋ฆ„์ƒ์— ๋‚˜๋…ธ/๋งˆ์ดํฌ๋กœ ํŒจํ„ด์„ ํ˜•์„ฑํ•˜๋Š” ์ผ์ด๋‹ค. ์ด ํŒจํ„ด๋œ ๋ฐ”์ด์˜ค ํ•„๋ฆ„์€ ๋น„ํ–‰ ์‹œ๊ฐ„ 2 ์ฐจ ์ด์˜จ ์งˆ๋Ÿ‰ ๋ถ„์„ (TOF-SIMS)์˜ ํ™”ํ•™์  ์„ฑ๋ถ„ ์ด๋ฏธ์ง• ๋ฐ ๊นŠ์ด ๋ถ„์„์— ์œ ์šฉํ•œ ๊ฐ•๋ ฅํ•œ ์‹œ๋ฃŒ๋กœ ์‚ฌ์šฉ๋  ์ˆ˜ ์žˆ๋‹ค. TOF-SIMS ๋ถ„์„์—์„œ Arn + ๊ฐ€์Šค ํด๋Ÿฌ์Šคํ„ฐ ์ด์˜จ ์†Œ์Šค (GCIB)๋Š” ์ฃผ๋กœ ํ‘œ๋ฉด ๋ถ„์„์˜ ์†Œ์Šค๋ฟ๋งŒ ์•„๋‹ˆ๋ผ ๋‚ฎ์€ ์†์ƒ ๋‹จ๋ฉด ๋ฐ ๋ถ„์ž ๊นŠ์ด ํ”„๋กœํŒŒ์ผ ๋ง ์‹คํ—˜์„ ์œ„ํ•œ ๋น ๋ฅธ ์นจ์‹ ์†๋„๋ฅผ ๊ฐ–๋Š” ์นจ์‹ ์†Œ์Šค๋กœ์„œ ๋„๋ฆฌ ์‚ฌ์šฉ๋˜์—ˆ๋‹ค. ๊ทธ๋Ÿฌ๋‚˜ SIMS ๋ถ„์„์—์„œ 3D depth profile์— ๋Œ€ํ•œ ์นจ์‹ ๋ฉ”์ปค๋‹ˆ์ฆ˜์„ ์ดํ•ดํ•˜๋ ค๋ฉด ์ž˜ ์ •์˜ ๋œ 3D ์œ ๊ธฐ ๋ฏธ์„ธ ํŒจํ„ด์œผ๋กœ ๋ณด์ •ํ•ด์•ผ ํ•˜๋Š”๋ฐ, ์ด๋•Œ ๋‚˜๋…ธ ์ธ๋ดํ…Œ์ด์…˜ ๊ธฐ์ˆ ์„ ์ด์šฉํ•œ๋‹ค. ์ด ๊ธฐ๋ฒ•์€ TOF-SIMS์˜ 3D ํ™”ํ•™์  ์„ฑ๋ถ„ ๋ถ„์„/์ด๋ฏธ์ง•์„์œ„ํ•œ ํ‘œ์ค€ ๋ฐ”์ด์˜ค ์‹œ๋ฃŒ๋กœ ์‚ฌ์šฉ๋  ๊ฒƒ์œผ๋กœ ๊ธฐ๋Œ€ํ•œ๋‹ค. ๋‘๋ฒˆ์งธ ์ธ๋ดํ…Œ์ด์…˜ ํ™œ์šฉ ์—ฐ๊ตฌ๋Š” ํƒ์นจ์ด ์†Œํ”„ํŠธ ํ•„๋ฆ„์„ ๋ˆ„๋ฅผ ๋•Œ ๋ฐœ์ƒํ•˜๋Š” ๋ฒŒ์ง€๋ฅผ ์„ ํƒ์ ์œผ๋กœ ์ œ๊ฑฐํ•˜๋Š” ์—ฐ๊ตฌ๋กœ์จ, PMMA ํ•„๋ฆ„์ด ๋‚˜๋…ธ ํŒจํ„ด ํ˜•์„ฑ์ธต์ด ๋˜๋„๋ก ์‚ฌ์šฉํ•œ๋‹ค. ๊ทธ๋™์•ˆ ๋ฒŒ์ง€๋Š” ์ธ๋ดํ…Œ์ด์…˜ ๋ฆฌ์†Œ๊ทธ๋ž˜ํ”ผ์˜ ๋ฐœ์ „์„ ์ €ํ•ดํ•˜๋Š” ๊ฐ€์žฅ ํฐ ์š”์ธ์œผ๋กœ์จ ์„ ํƒ์ ์ธ ์ œ๊ฑฐ๊ฐ€ ์–ด๋ ค์šด ๊ฒƒ์œผ๋กœ ์•Œ๋ ค์ ธ ์žˆ์—ˆ๋‹ค. ํ•˜์ง€๋งŒ ์ด ๋…ผ๋ฌธ์—์„œ๋Š” ํ˜„์ƒ์•ก์„ ์ด์šฉํ•œ ๊ฐ„๋‹จํ•œ ๋ฐฉ์‹์œผ๋กœ ๋‹ค๋‹จ๊ณ„์˜ ๋ฒŒ์ง€ ์—†๋Š” ํŒจํ„ฐ๋‹ ๋ฐฉ์‹์„ ์ตœ์ดˆ๋กœ ์†Œ๊ฐœํ•จ์œผ๋กœ์จ ์ƒˆ๋กœ์šด ์ฐจ์›์˜ ๋ฆฌ์†Œ๊ทธ๋ž˜ํ”ผ ๊ธฐ๋ฒ•์„ ์ œ์•ˆํ•˜๊ณ  ์žˆ๋‹ค. ๋˜ํ•œ ์ด ๊ธฐ๋ฒ•์€ 3์ฐจ์› ๋‚˜๋…ธ ํŒจํ„ด์„ ์„ฑ๊ณต์ ์œผ๋กœ ๋ณต์ œ ๋ชฐ๋“œ์— ์ „์‚ฌํ•  ์ˆ˜ ์žˆ์œผ๋ฏ€๋กœ ๊ณต์ • ๋น„์šฉ ์ ˆ๊ฐ ํšจ๊ณผ๋Š” ๋ฌผ๋ก ์ด๊ณ , ๋‹ค์–‘ํ•œ ์—ฐ๊ตฌ ๋ถ„์•ผ์—์„œ ์ด๋ฅผ ํ™œ์šฉํ•  ์ˆ˜ ์žˆ์„ ๊ฒƒ์œผ๋กœ ๊ธฐ๋Œ€ํ•œ๋‹ค.Abstract ............................... iv List of Figures ....................... xiii List of Tables ........................ xxi Chapter 1 Introduction 1 1.1 Multifunctional atomic force microscopy 1 1.2 Background on development of external stage for low noise AFM 2 1.3 Industrial applications for low noise atomic force microscopy 4 1.3.1 Critical dimension 4 1.3.2 Emergence of ultrathin films 7 1.4 Applications of indentation lithography using low noise atomic force microscopy 8 1.4.1 Demand for biological applications 8 1.4.2 Various lithography techniques 13 1.4.3 Strengths and limitations of AFM indentation lithography 13 1.5. The aims of this study 15 1.6. Reference 16 Chapter 2 Development of external automation stage for LN-AFM 25 2.1 Configurations of LN-AFM 25 2.2 Development of independent external stage 29 2.2.1 Configurations of the external stage 29 2.2.2 Position adjustment method 34 2.2.3 Position accuracy test 38 2.3. Reference 45 Chapter 3 Industrial applications using the LN-AFM with the external stage 47 3.1 Industrial demands 47 3.2 Critical dimension measurements 49 3.2.1 Vector approach probing method 49 3.2.2 Advantages and limitations 50 3.2.3 CD measurement using vertical structure 50 3.2.4 Tip wear test 55 3.3 Critical roughness measurements 58 3.3.1 Fabrication of ultrathin film using atomic layer deposition 58 3.3.2 Reliability of surface roughness measurements 60 3.3.3 Interfacial effects using roughness scaling method 63 3.3.4 Definition of critical roughness 68 3.3.5 Effectiveness of the critical roughness 74 3.3.6 Inline applications for the morphology analysis of ultrathin hafnium oxide films 76 3.4. Reference 81 Chapter 4 Applications of indentation lithography 88 4.1 Patterned organic films for 3D depth profiles of TOF-SIMS imaging 88 4.1.1 Fabrication method of organic dual layer for 3D TOF-SIMS 88 4.1.2 Results for organic dual layer for 3D TOF-SIMS 90 4.1.3 Fabrication issues of patterned organic dual layer 92 4.1.4 3D depth profile of patterned organic dual layer 97 4.2 Bulge-free indentation technique 100 4.2.1 PMMA bulge removal using IPA/DI developer 100 4.2.2 Mechanism study on the selective bulge removal process 105 4.2.3 Optimal condition for bulge-free indentation 108 4.2.4 3D bulge-free nano-patterns 112 4.3. Reference 115 Chapter 5 Conclusion 119 5.1 Discussion and conclusion 119 5.2 Reference 124 ๊ตญ ๋ฌธ ์ดˆ ๋ก 126Docto

    Adhesion and mechanical properties of PDMS-based materials probed with AFM: A review

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    This work was supported by Russian Science Foundation project grant 18-19-00645 "Adhesion of polymer-based soft materials: from liquid to solid-.Polydimethylsiloxane (PDMS) is the most widely used silicon-based organic polymer, and is particularly known for its unusual rheological properties. PDMS has found extensive usage in various fields ranging from microfluidics and flexible electronics to cosmetics and food industry. In certain applications, like e.g. dry adhesives or dry transfer of 2D materials, adhesive properties of PDMS play crucial role. In this review we focus on probing the mechanical and adhesive properties of PDMS by means of atomic force microscopy (AFM). Main advantages and limitations of AFM-based measurements in comparison to macroscopic tests are discussed.Russian Science Foundation 18-19-00645; Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Unionโ€™s Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART

    Mode I and Mode II Measurements For Stiction Failed Micro-Electro-Mechanical Systems

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    Among MicroElectroMechanical Systems (MEMS), the most common type of failure is stiction. Stiction is the unintended adhesion between two surfaces when they are in close proximity to each other. Various studies have been conducted in recent years to study stiction. Our research group has shown the in-service repair of the stiction failed MEMS devices is possible with structural vibrations. In order to further understand this phenomenon and better predict, theoretically, the onset of repair we have constructed an apparatus to determine the Mode I, II, and III interfacial adhesion energies of MEMS devices failed on a substrate. Though our method is general, we are specifically focused on devices created using the SUMMiT V process. An apparatus has been constructed that has 8 degrees-of-freedom between the MEMS device, the surface on which the device is failed, and a scanning interferometric microscope. Deflection profiles of stiction failed MEMS (micro-cantilevered beams 1000 microns long, 30 microns wide, and 2.3 microns thick) have their deflection profiles measured with nanometer resolution by a scanning interferometric microscope. Using the experimental apparatus that is constructed, we determine the Mode I and Mode II interfacial adhesion energies using two methodologies. The first method utilizes the peel test scheme to determine pure Mode-I and Mixed Mode (Mode I and II) interfacial adhesion energies. In order to determine the values for the interfacial adhesion energies a nonlinear model was developed for the deflection of a beam that accounts for its stretching. Energy methods are then utilized to determine interfacial adhesion energies. Using the same experimental apparatus Mode II interfacial adhesion energies are measured directly with a novel technique developed in this work. This experimental method for measuring the Mode II interfacial adhesion energies for stiction failed MEMS devices uses a microcantilever beam (1500 ฮผm long, 30 ฮผm wide and 2.3 ฮผm thick) attached to MEMS actuator with fix-fix beam flexure. Deflection of the spring is measured with the vernier scale of the actuator. Then a nonlinear elastic model for the fixโ€”fix beam flexure is used to determine the interfacial adhesion energy between the failed microcantilever beam and the surface. A theory is developed to measure the strain energy release rates with finite crack growth, which gives the upper bounds of interfacial adhesion energy for Mode II fracture problem. A separate theory is developed for infinitesimal crack growth, which gives the exact interfacial adhesion energy of the Mode II fracture problem. Because the surface roughness plays an important role in the adhesion of MEMS structures, the surfaces of all structures have been characterized with an Atomic Force Microscope (AFM)
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