The Third International Symposium on Space Terahertz Technology: Symposium proceedings

Papers from the symposium are presented that are relevant to the generation, detection, and use of the terahertz spectral region for space astronomy and remote sensing of the Earth's upper atmosphere. The program included thirteen sessions covering a wide variety of topics including solid-state oscillators, power-combining techniques, mixers, harmonic multipliers, antennas and antenna arrays, submillimeter receivers, and measurement techniques

Design and characterisation of terahertz Schottky diode harmonic mixers

Efficient, compact, and reliable terahertz frequency converters preferably operating at ambient temperature are crucial for stabilising far-infrared optical sources. This thesis focuses on the design and characterisation of terahertz Schottky diode harmonic mixers for frequency stabilisation of quantum-cascade lasers.First, the influence of idler terminations on harmonic mixer performance and diode embedding impedance at radio and local oscillator frequencies wasstudied. Based on this, a 3.5-THz, 76-harmonic mixer was designed. A planar, single-ended Schottky diode with a sub-\ub5m contact area was realised on a2-\ub5m suspended GaAs substrate. The integrated mixer circuit was assembled in an E-plane split-block with the aid of beam leads. The Schottky diode anode pad was designed to act as a radio frequency E-plane probe and extended as a beamlead to provide dc ground, resulting in an electrically compact circuit. The design was validated by conducting a sensitivity analysis of critical parameters that are susceptible to fabrication tolerances. Two integrated circuits with Schottky contact areas of 0.11 and 0.14 \ub5m2 were assembled on mixer modules and dc/RF characterisation was carried out. Both harmonicmixers exhibited a conversion loss of about 60 dB at an intermediate frequency of 200 MHz. When evaluated in a phase-locked loop, it resulted in asignal-to-noise ratio of 40 dB, which was more than sufficient to phase lock the quantum-cascade lasers.This work presents uncooled, efficient THz harmonic mixers for stabilising THz optical sources. It opens up many opportunities for building a THz heterodyne spectrometer with a high spectral resolution to detect gas species such as hydroxyl radical and atomic oxygen in the frequency range of 3-5 THz

Resonant Tunnelling Diodes for Millimetre and Sub-Millimetre Wave Mixing Applications

The primary intention of this research work was to evaluate a topology for a sub-harmonic down conversion mixer exploiting the fourth harmonic of a LO signal. Designs were evaluated by simulation at 640GHz and 320GHz with the aim of exploring the potential of a RTD based down-converter at 640GHz, in the 580-750GHz atmospheric window, with an intermediate frequency signal in the range around 2GHz by mixing with the fourth harmonic of a 159.5GHz LO signal. Related design studies were undertaken at 320GHz which gave a simulated single side band (SSB) conversion loss of 5.7dB, and with a LO power requirement of less than -9.5dBm which vindicated the principle, as far as the design stage is concerned, of using RTDs as the non-linear mixing element, where the layer design can be tailored to favour very low pump powers. The other, related, target of the current PhD work was to also explore the potential for high LO drive level mixers and their up-conversion efficiencies using the same novel devices, i.e. RTDs, but with a different layer design, better suited to support high pump powers in this instance. For achieving the latter goal, two different sub-harmonic up-conversion mixers employing a single RTD and using the second harmonic of an LO signal were designed and evaluated at two different frequencies. The first mixer design was aimed at 180 GHz providing -7.5dBm of output power while the second one should work at 110GHz showing output power in the range of -4dBm, and was used to initially evaluate the approach and which could, in principle, be later fabricated and measured. All these down and up-conversion mixers were carefully designed using ADS and HFSS and evaluated using two different technologies, microstrip and Grounded Coplanar Waveguide (GCPW), and both compared with a nearest Schottky diode based approaches, and also their physical mask was produced in anticipation of a later fabrication stage

Análisis y diseño de multiplicadores y mezcladores mediante el Método de Monte CArlo en la banda de THZ

[ES]La región del espectro electromagnético comprendida entre 100 GHz y 10 THz alberga una gran variedad de aplicaciones en campos tan dispares como la radioastronomía, espectroscopía molecular, medicina, seguridad, radar, etc. Los principales inconvenientes en el desarrollo de estas aplicaciones son los altos costes de producción de los sistemas trabajando a estas frecuencias, su costoso mantenimiento, gran volumen y baja fiabilidad. Entre las diferentes tecnologías a frecuencias de THz, la tecnología de los diodos Schottky juega un importante papel debido a su madurez y a la sencillez de estos dispositivos. Además, los diodos Schottky pueden operar tanto a temperatura ambiente como a temperaturas criogénicas, con altas eficiencias cuando se usan como multiplicadores y con moderadas temperaturas de ruido en mezcladores. El principal objetivo de esta tesis doctoral es analizar los fenómenos físicos responsables de las características eléctricas y del ruido en los diodos Schottky, así como analizar y diseñar circuitos multiplicadores y mezcladores en bandas milimétricas y submilimétricas. La primera parte de la tesis presenta un análisis de los fenómenos físicos que limitan el comportamiento de los diodos Schottky de GaAs y GaN y de las características del espectro de ruido de estos dispositivos. Para llevar a cabo este análisis, un modelo del diodo basado en la técnica de Monte Carlo se ha considerado como referencia debido a la elevada precisión y fiabilidad de este modelo. Además, el modelo de Monte Carlo permite calcular directamente el espectro de ruido de los diodos sin necesidad de utilizar ningún modelo analítico o empírico. Se han analizado fenómenos físicos como saturación de la velocidad, inercia de los portadores, dependencia de la movilidad electrónica con la longitud de la epicapa, resonancias del plasma y efectos no locales y no estacionarios. También se ha presentado un completo análisis del espectro de ruido para diodos Schottky de GaAs y GaN operando tanto en condiciones estáticas como variables con el tiempo. Los resultados obtenidos en esta parte de la tesis contribuyen a mejorar la comprensión de la respuesta eléctrica y del ruido de los diodos Schottky en condiciones de altas frecuencias y/o altos campos eléctricos. También, estos resultados han ayudado a determinar las limitaciones de modelos numéricos y analíticos usados en el análisis de la respuesta eléctrica y del ruido electrónico en los diodos Schottky. La segunda parte de la tesis está dedicada al análisis de multiplicadores y mezcladores mediante una herramienta de simulación de circuitos basada en la técnica de balance armónico. Diferentes modelos basados en circuitos equivalentes del dispositivo, en las ecuaciones de arrastre-difusión y en la técnica de Monte Carlo se han considerado en este análisis. El modelo de Monte Carlo acoplado a la técnica de balance armónico se ha usado como referencia para evaluar las limitaciones y el rango de validez de modelos basados en circuitos equivalentes y en las ecuaciones de arrastre-difusión para el diseño de circuitos multiplicadores y mezcladores. Una notable característica de esta herramienta de simulación es que permite diseñar circuitos Schottky teniendo en cuenta tanto la respuesta eléctrica como el ruido generado en los dispositivos. Los resultados de las simulaciones presentados en esta parte de la tesis, tanto para multiplicadores como mezcladores, se han comparado con resultados experimentales publicados en la literatura. El simulador que integra el modelo de Monte Carlo con la técnica de balance armónico permite analizar y diseñar circuitos a frecuencias superiores a 1 THz.[EN]The terahertz region of the electromagnetic spectrum (100 GHz-10 THz) presents a wide range of applications such as radio-astronomy, molecular spectroscopy, medicine, security and radar, among others. The main obstacles for the development of these applications are the high production cost of the systems working at these frequencies, high maintenance, high volume and low reliability. Among the different THz technologies, Schottky technology plays an important rule due to its maturity and the inherent simplicity of these devices. Besides, Schottky diodes can operate at both room and cryogenic temperatures, with high efficiency in multipliers and moderate noise temperature in mixers. This PhD. thesis is mainly concerned with the analysis of the physical processes responsible for the characteristics of the electrical response and noise of Schottky diodes, as well as the analysis and design of frequency multipliers and mixers at millimeter and submillimeter wavelengths. The first part of the thesis deals with the analysis of the physical phenomena limiting the electrical performance of GaAs and GaN Schottky diodes and their noise performance. To carry out this analysis, a Monte Carlo model of the diode has been used as a reference due to the high accuracy and reliability of this diode model at millimeter and submillimter wavelengths. Besides, the Monte Carlo model provides a direct description of the noise spectra of the devices without the necessity of any additional analytical or empirical model. Physical phenomena like velocity saturation, carrier inertia, dependence of the electron mobility on the epilayer length, plasma resonance and nonlocal effects in time and space have been analysed. Also, a complete analysis of the current noise spectra of GaAs and GaN Schottky diodes operating under static and time varying conditions is presented in this part of the thesis. The obtained results provide a better understanding of the electrical and the noise responses of Schottky diodes under high frequency and/or high electric field conditions. Also these results have helped to determine the limitations of numerical and analytical models used in the analysis of the electrical and the noise responses of these devices. The second part of the thesis is devoted to the analysis of frequency multipliers and mixers by means of an in-house circuit simulation tool based on the harmonic balance technique. Different lumped equivalent circuits, drift-diffusion and Monte Carlo models have been considered in this analysis. The Monte Carlo model coupled to the harmonic balance technique has been used as a reference to evaluate the limitations and range of validity of lumped equivalent circuit and driftdiffusion models for the design of frequency multipliers and mixers. A remarkable feature of this reference simulation tool is that it enables the design of Schottky circuits from both electrical and noise considerations. The simulation results presented in this part of the thesis for both multipliers and mixers have been compared with measured results available in the literature. In addition, the Monte Carlo simulation tool allows the analysis and design of circuits above 1 THz

Terahertz Technology and Its Applications

The Terahertz frequency range (0.1 – 10)THz has demonstrated to provide many opportunities in prominent research fields such as high-speed communications, biomedicine, sensing, and imaging. This spectral range, lying between electronics and photonics, has been historically known as “terahertz gap” because of the lack of experimental as well as fabrication technologies. However, many efforts are now being carried out worldwide in order improve technology working at this frequency range. This book represents a mechanism to highlight some of the work being done within this range of the electromagnetic spectrum. The topics covered include non-destructive testing, teraherz imaging and sensing, among others

Integration of Planar Antennas with MMIC Active Frontends for THz Imaging Applications

In recent years, there has been constant growth in using THz frequencies or mm, sub- mm wavelengths for various applications such as: Astronomy, Atmospheric studies, security, bio-medical imaging. All these applications are now seen more feasible due to rapid enhancements of semi-conductor processing technologies. The state of the art MMIC processing techniques offering increased cut-off frequencies (> 500 GHz) of HEMT/HBT transistors open up new opportunities for integrating systems on chip along with an antenna for either Transmit/Receive architecture. The work carried out in this thesis mainly deals with the development of antenna structures which are compatible to available MMIC processes and have well defined interface with the active circuit components for microwave as well as mm/sub-mm wave applications. The thesis briefly reviews the THz applications and modern MMIC process techniques. There- after the emphasis is on various possible antenna structures which are feasible to fabricate with MMIC layer topologies. Such antenna structures are further compared in terms of their Gain, Bandwidth, Directivity, Gaussian Coupling Efficiency and Compactness. The main focus of the thesis is towards the development of multi-pixel front ends for THz imaging of concealed weapons for security applications. The requirement in this type of application is the heterodyne detection of reflected THz signals from the distant objects (> 20 m) with tightly integrated pixels constituting of antenna integrated receiver (Antenna + Mixer + LO-Multiplier chain) giving real-time video imaging. Thus the work is focused towards Co-design of Antenna + Mixer aiming towards compactness and minimizing physical area of pixel for tighter integration. One of the important results obtained in this work, is the integration of a Double Slot Antenna with a sub-harmonically pumped resistive mixer. The novelty in this work is the new geometrical placements of slots and microstrip feed network. This new topology has differential excitation of two parallel slots for broadside beam. With this new arrangement, the need of conventional power combining network from two slots is eliminated and the transistors can directly be placed between the two slots, thus minimizing the physical area. Such arrangement is fabricated and tested at frequency of 200 GHz using 50 nm HEMT process. Encouraging results are obtained with mixer conversion loss of ~15 dB with +3 dBm LO power at sub-harmonic of 100 GHz. The next key result of this thesis is the integration of a differential 2 x 2 array of microstrip patch antennas with Gilbert Cell type sub-harmonically pumped mixer. This integration is achieved using 250 nm DHBT process. Considering the antenna ohmic efficiency, mixer conversion loss and gain of IF amplifier; the overall receiver front end features a conversion gain of ~ 14±1 dB at frequency of 320 GHz when pumped with sub-harmonic LO of 160 GHz with ~4 dBm on chip power. This receiver was also tested close to 340 GHz, which is a target frequency for security imaging applications. Another important aspect of this work is to quantify the ability of a planar antenna to couple radiated power in to the THz quasi-optical system. This is often evaluated as Gaussian Coupling Efficiency or Gaussicity. Therefore MMIC integrated antennas are needed to be characterized in terms of their Gaussicity as well. For this, a new algorithm has been developed which accepts the far-field of the antenna as input and computes the optimum beam parameters (waist and its position) which maximize the Gaussicity. Furthermore this algorithm is applied to different antenna array configurations to quantify their radiation pattern for Gaussian Coupling Efficiency

Planar Heterostructure Barrier Varactor Diodes for Millimetre Wave Applications

This thesis deals with fabrication, characterisation and modelling of the Heterostructure Barrier Varactor (HBV) diode and its use in frequency multiplier applications. Different aspects of material structures and frequency multipliers are described. The aim of the work presented is to develop design methods and processes to fabricate state-of-the-art planar HBVs and multipliers in the millimetre and submillimetre wave length region.<p /> Results from AlGaAs HBV frequency tripler measurements are presented. Simulations and cooled measurements show that excessive conduction current due to self-heating degrades the multiplier efficiency. A new design of planar GaAs-based HBVs with reduced thermal resistance and series resistance have been fabricated. A state-of-the-art performance of 4,8% efficiency and an output power of 4 mW at 246 GHz was achieved.<p /> A novel fabrication process where HBV diodes are fabricated on a copper substrate is proposed. This reduces thermal resistance and parasitic resistance without degrading the electrical characteristics.<p /> A 141 GHz quasi-optical HBV tripler is presented. A peak flange-to-flange efficiency of 8% and an output power of 11,5 mW was achieved.<p /> Different III-V material systems for HBVs have been tested. The results of lattice matched and pseudomorphic GaAs/AlGaAs, InGaAs/InAlAs, InAs/AlSb and phosphide containing materials for HBVs are presented. The state-of-the-art material for millimetre and submillimetre wave HBVs is the In_0,53GaAs/In_0,52AlAs system with a thin AlAs layer (30 Å) in the middle of the barrier.<p /> Both simple analytical models and a self-consistent Poisson/Schroedinger approach are used to predict and optimise HBV diodes. Finally, a simple quick-design method for calculation of optimum embedding impedances, optimum conversion efficiency and pump power for HBV triplers are presented