Via-configurable transistors array: a regular design technique to improve ICs yield

Process variations are a major bottleneck for digital CMOS integrated circuits manufacturability and yield. That is why regular techniques with different degrees of regularity are emerging as possible solutions. Our proposal is a new regular layout design technique called Via-Configurable Transistors Array (VCTA) that pushes to the limit circuit layout regularity for devices and interconnects in order to maximize regularity benefits. VCTA is predicted to perform worse than the Standard Cell approach designs for a certain technology node but it will allow the use of a future technology on an earlier time. Our objective is to optimize VCTA for it to be comparable to the Standard Cell design in an older technology. Simulations for the first unoptimized version of our VCTA of delay and energy consumption for a Full Adder circuit in the 90 nm technology node are presented and also the extrapolation for Carry-Ripple Adders from 4 bits to 64 bits.Peer ReviewedPostprint (published version

Conquering Process Variability: A Key Enabler for Profitable Manufacturing in Advanced Technology Nodes

Abstract – Achieving the required time to market with economically acceptable yield levels and maintaining them in volume production has become a very challenging task in the most advanced technology nodes. One of the primary reasons is the relative increase in process variability in each generation. This paper will describe a comprehensive study of the main sources of variability and their effects on active devices, interconnect and ultimately product performance and yield. We will present benchmarking of yield loss components for different product classes. We will then propose several approaches for variability reduction in the design, yield ramp and volume manufacturing phases. EVOLUTION OF YIELD LOSS MECHANISMS In the older technology generations, manufacturing yield loss was dominated by random defects. By the time volum

Design Methodology for IC Manufacturability Based on Regular Logic-Bricks

Implementing logic blocks in an integrated circuit in terms of repeating or regular geometry patterns [6,7] can provide significant advantages in terms of manufacturability and design cost [2]. Various forms of gate and logic arrays have been recently proposed that can offer such pattern regularity to reduce design risk and costs [2,4,9,11,12]. In this paper, we propose a full-maskset design methodology which provides the same physical design coherence as a configurable array, but with area and other design benefits comparable to standard cell ASICs. This methodology is based on a set of simple logic primitives that are mapped to a set of logic bricks that are defined by a restrictive set of RET(Resolution Enhancement Technique)-friendly geometry patterns. We propose a design methodology to explore trade-offs between the number of bricks and associated level of configurability versus the required silicon area. Results are shown to compare a design implemented with a small number of regular bricks to an implementation based on a full standard cell library in a 90nm CMOS technology

Digital Circuit Design Using Floating Gate Transistors

Floating gate (flash) transistors are used exclusively for memory applications today. These applications include SD cards of various form factors, USB flash drives and SSDs. In this thesis, we explore the use of flash transistors to implement digital logic circuits. Since the threshold voltage of flash transistors can be modified at a fine granularity during programming, several advantages are obtained by our flash-based digital circuit design approach. For one, speed binning at the factory can be controlled with precision. Secondly, an IC can be re-programmed in the field, to negate effects such as aging, which has been a significant problem in recent times, particularly for mission-critical applications. Thirdly, unlike a regular MOSFET, which has one threshold voltage level, a flash transistor can have multiple threshold voltage levels. The benefit of having multiple threshold voltage levels in a flash transistor is that it allows the ability to encode more symbols in each device, unlike a regular MOSFET. This allows us to implement multi-valued logic functions natively. In this thesis, we evaluate different flash-based digital circuit design approaches and compare their performance with a traditional CMOS standard cell-based design approach. We begin by evaluating our design approach at the cell level to optimize the design’s delay, power energy and physical area characteristics. The flash-based approach is demonstrated to be better than the CMOS standard cell approach, for these performance metrics. Afterwards, we present the performance of our design approach at the block level. We describe a synthesis flow to decompose a circuit block into a network of interconnected flash-based circuit cells. We also describe techniques to optimize the resulting network of flash-based circuit cells using don’t cares. Our optimization approach distinguishes itself from other optimization techniques that use don’t cares, since it a) targets a flash-based design flow, b) optimizes clusters of logic nodes at once instead of one node at a time, c) attempts to reduce the number of cubes instead of reducing the number of literals in each cube and d) performs optimization on the post-technology mapped netlist which results in a direct improvement in result quality, as compared to pre-technology mapping logic optimization that is typically done in the literature. The resulting network characteristics (delay, power, energy and physical area) are presented. These results are compared with a standard cell-based realization of the same block (obtained using commercial tools) and we demonstrate significant improvements in all the design metrics. We also study flash-based FPGA designs (both static and dynamic), and present the tradeoff of delay, power dissipation and energy consumption of the various designs. Our work differs from previously proposed flash-based FPGAs, since we embed the flash transistors (which store the configuration bits) directly within the logic and interconnect fabrics. We also present a detailed description of how the programming of the configuration bits is accomplished, for all the proposed designs

Digital Circuit Design Using Floating Gate Transistors

Floating gate (flash) transistors are used exclusively for memory applications today. These applications include SD cards of various form factors, USB flash drives and SSDs. In this thesis, we explore the use of flash transistors to implement digital logic circuits. Since the threshold voltage of flash transistors can be modified at a fine granularity during programming, several advantages are obtained by our flash-based digital circuit design approach. For one, speed binning at the factory can be controlled with precision. Secondly, an IC can be re-programmed in the field, to negate effects such as aging, which has been a significant problem in recent times, particularly for mission-critical applications. Thirdly, unlike a regular MOSFET, which has one threshold voltage level, a flash transistor can have multiple threshold voltage levels. The benefit of having multiple threshold voltage levels in a flash transistor is that it allows the ability to encode more symbols in each device, unlike a regular MOSFET. This allows us to implement multi-valued logic functions natively. In this thesis, we evaluate different flash-based digital circuit design approaches and compare their performance with a traditional CMOS standard cell-based design approach. We begin by evaluating our design approach at the cell level to optimize the design’s delay, power energy and physical area characteristics. The flash-based approach is demonstrated to be better than the CMOS standard cell approach, for these performance metrics. Afterwards, we present the performance of our design approach at the block level. We describe a synthesis flow to decompose a circuit block into a network of interconnected flash-based circuit cells. We also describe techniques to optimize the resulting network of flash-based circuit cells using don’t cares. Our optimization approach distinguishes itself from other optimization techniques that use don’t cares, since it a) targets a flash-based design flow, b) optimizes clusters of logic nodes at once instead of one node at a time, c) attempts to reduce the number of cubes instead of reducing the number of literals in each cube and d) performs optimization on the post-technology mapped netlist which results in a direct improvement in result quality, as compared to pre-technology mapping logic optimization that is typically done in the literature. The resulting network characteristics (delay, power, energy and physical area) are presented. These results are compared with a standard cell-based realization of the same block (obtained using commercial tools) and we demonstrate significant improvements in all the design metrics. We also study flash-based FPGA designs (both static and dynamic), and present the tradeoff of delay, power dissipation and energy consumption of the various designs. Our work differs from previously proposed flash-based FPGAs, since we embed the flash transistors (which store the configuration bits) directly within the logic and interconnect fabrics. We also present a detailed description of how the programming of the configuration bits is accomplished, for all the proposed designs

Robust Circuit & Architecture Design in the Nanoscale Regime

Silicon based integrated circuit (IC) technology is approaching its physical limits. For sub 10nm technology nodes, the carbon nanotube (CNT) based field effect transistor has emerged as a promising device because of its excellent electronic properties. One of the major challenges faced by the CNT technology is the unwanted growth of metallic tubes. At present, there is no known CNT fabrication technology which allows the fabrication of 100% semiconducting CNTs. The presence of metallic tubes creates a short between the drain and source terminals of the transistor and has a detrimental impact on the delay, static power and yield of CNT based gates. This thesis will address the challenge of designing robust carbon nanotube based circuits in the presence of metallic tubes. For a small percentage of metallic tubes, circuit level solutions are proposed to increase the functional yield of CNT based gates in the presence of metallic tubes. Accurate analytical models with less than a 3% inaccuracy rate are developed to estimate the yield of CNT based circuit for a different percentage of metallic tubes and different drive strengths of logic gates. Moreover, a design methodology is developed for yield-aware carbon nanotube based circuits in the presence of metallic tubes using different CNFET transistor configurations. Architecture based on regular logic bricks with underlying hybrid CNFET configurations are developed which gives better trade-offs in terms of performance, power, and functional yield. In the case when the percentage of metallic tubes is large, the proposed circuit level techniques are not sufficient. Extra processing techniques must be applied to remove the metallic tubes. The tube removal techniques have trade-offs, as the removal process is not perfect and removes semiconducting tubes in addition to removing unwanted metallic tubes. As a result, stochastic removal of tubes from the drive and fanout gate(s) results in large variation in the performance of CNFET based gates and in the worst case open circuit gates. A Monte Carlo simulation engine is developed to estimate the impact of the removal of tubes on the performance and power of CNFET based logic gates. For a quick estimation of functional yield of logic gates, accurate analytical models are developed to estimate the functional yield of logic gates when a fraction of the tubes are removed. An efficient tube level redundancy (TLR) is proposed, resulting in a high functional yield of carbon nanotube based circuits with minimal overheads in terms of area and power when large fraction of tubes are removed. Furthermore, for applications where parallelism can be utilized we propose to increase the functional yield of the CNFET based circuits by increasing the logic depth of gates

Algorithmic techniques for nanometer VLSI design and manufacturing closure

As Very Large Scale Integration (VLSI) technology moves to the nanoscale regime, design and manufacturing closure becomes very difficult to achieve due to increasing chip and power density. Imperfections due to process, voltage and temperature variations aggravate the problem. Uncertainty in electrical characteristic of individual device and wire may cause significant performance deviations or even functional failures. These impose tremendous challenges to the continuation of Moore's law as well as the growth of semiconductor industry. Efforts are needed in both deterministic design stage and variation-aware design stage. This research proposes various innovative algorithms to address both stages for obtaining a design with high frequency, low power and high robustness. For deterministic optimizations, new buffer insertion and gate sizing techniques are proposed. For variation-aware optimizations, new lithography-driven and post-silicon tuning-driven design techniques are proposed. For buffer insertion, a new slew buffering formulation is presented and is proved to be NP-hard. Despite this, a highly efficient algorithm which runs > 90x faster than the best alternatives is proposed. The algorithm is also extended to handle continuous buffer locations and blockages. For gate sizing, a new algorithm is proposed to handle discrete gate library in contrast to unrealistic continuous gate library assumed by most existing algorithms. Our approach is a continuous solution guided dynamic programming approach, which integrates the high solution quality of dynamic programming with the short runtime of rounding continuous solution. For lithography-driven optimization, the problem of cell placement considering manufacturability is studied. Three algorithms are proposed to handle cell flipping and relocation. They are based on dynamic programming and graph theoretic approaches, and can provide different tradeoff between variation reduction and wire- length increase. For post-silicon tuning-driven optimization, the problem of unified adaptivity optimization on logical and clock signal tuning is studied, which enables us to significantly save resources. The new algorithm is based on a novel linear programming formulation which is solved by an advanced robust linear programming technique. The continuous solution is then discretized using binary search accelerated dynamic programming, batch based optimization, and Latin Hypercube sampling based fast simulation

Managing Variability in VLSI Circuits.

Over the last two decades, Design for Manufacturing (DFM) has emerged as an essential field within the semiconductor industry. The main objective of DFM is to reduce and, if possible, eliminate variability in integrated circuits (ICs). Numerous techniques for managing variation have emerged throughout IC design: manufacturers design instruments with minute tolerances, process engineers calibrate and characterize a given process throughout its lifetime, and IC designers strive to model and characterize variability within their devices, libraries, and circuits. This dissertation focuses on the last of these three techniques and presents material relevant to managing variability within IC design. Since characterization and modeling are essential to the analysis and reduction of variation in modern-day designs, this dissertation begins by studying various correlation models used within Statistical Static Timing Analysis (SSTA). In the end, the study shows that using complex correlation models does not necessarily result in significant error reduction within SSTA, and that simple models (which only include die-to-die and random variation) can therefore be used to achieve similar accuracy with reduced overhead and run-time. Next, the variation models, themselves, are explored and a new critical dimension (CD) model is proposed which reduces standard deviation error in SSTA by ~3X. Finally, the focus changes from the timing analysis level and moves lower in the design hierarchy to the libraries and devices that comprise the backbone of IC design. The final three chapters study mechanical stress enhancement and discuss how to fully exploit the layout dependencies of mechanically stressed silicon. The first of these three chapters presents an optimization scheme that uses the layout dependencies of stress in conjunction with dual-threshold-voltage (Vth) assignment to decrease leakage power consumption by ~24%. Next, the second of the three chapters proposes a new standard cell library design methodology, called “STEEL.” STEEL provides average delay improvements of 11% over equivalent single-Vth implementations, while consuming 2.5X less leakage than the dual-Vth alternative. Finally, the stress enhanced studies (and this document) are concluded by a new optimization scheme that combines stress enhancement with gate length biasing to achieve 2.9X leakage power savings in IC designs without modifying Vth.Ph.D.Electrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/75947/1/btcline_1.pd

Regular cell design approach considering lithography-induced process variations

The deployment delays for EUVL, forces IC design to continue using 193nm wavelength lithography with innovative and costly techniques in order to faithfully print sub-wavelength features and combat lithography induced process variations. The effect of the lithography gap in current and upcoming technologies is to cause severe distortions due to optical diffraction in the printed patterns and thus degrading manufacturing yield. Therefore, a paradigm shift in layout design is mandatory towards more regular litho-friendly cell designs in order to improve line pattern resolution. However, it is still unclear the amount of layout regularity that can be introduced and how to measure the benefits and weaknesses of regular layouts. This dissertation is focused on searching the degree of layout regularity necessary to combat lithography variability and outperform the layout quality of a design. The main contributions that have been addressed to accomplish this objective are: (1) the definition of several layout design guidelines to mitigate lithography variability; (2) the proposal of a parametric yield estimation model to evaluate the lithography impact on layout design; (3) the development of a global Layout Quality Metric (LQM) including a Regularity Metric (RM) to capture the degree of layout regularity of a layout implementation and; (4) the creation of different layout architectures exploiting the benefits of layout regularity to outperform line-pattern resolution, referred as Adaptive Lithography Aware Regular Cell Designs (ALARCs). The first part of this thesis provides several regular layout design guidelines derived from lithography simulations so that several important lithography related variation sources are minimized. Moreover, a design level methodology, referred as gate biasing, is proposed to overcome systematic layout dependent variations, across-field variations and the non-rectilinear gate effect (NRG) applied to regular fabrics by properly configuring the drawn transistor channel length. The second part of this dissertation proposes a lithography yield estimation model to predict the amount of lithography distortion expected in a printed layout due to lithography hotspots with a reduced set of lithography simulations. An efficient lithography hotspot framework to identify the different layout pattern configurations, simplify them to ease the pattern analysis and classify them according to the lithography degradation predicted using lithography simulations is presented. The yield model is calibrated with delay measurements of a reduced set of identical test circuits implemented in a CMOS 40nm technology and thus actual silicon data is utilized to obtain a more realistic yield estimation. The third part of this thesis presents a configurable Layout Quality Metric (LQM) that considering several layout aspects provides a global evaluation of a layout design with a single score. The LQM can be leveraged by assigning different weights to each evaluation metric or by modifying the parameters under analysis. The LQM is here configured following two different set of partial metrics. Note that the LQM provides a regularity metric (RM) in order to capture the degree of layout regularity applied in a layout design. Lastly, this thesis presents different ALARC designs for a 40nm technology using different degrees of layout regularity and different area overheads. The quality of the gridded regular templates is demonstrated by automatically creating a library containing 266 cells including combinational and sequential cells and synthesizing several ITC'99 benchmark circuits. Note that the regular cell libraries only presents a 9\% area penalty compared to the 2D standard cell designs used for comparison and thus providing area competitive designs. The layout evaluation of benchmark circuits considering the LQM shows that regular layouts can outperform other 2D standard cell designs depending on the layout implementation.Los continuos retrasos en la implementación de la EUVL, fuerzan que el diseño de IC se realice mediante litografía de longitud de onda de 193 nm con innovadoras y costosas técnicas para poder combatir variaciones de proceso de litografía. La gran diferencia entre la longitud de onda y el tamaño de los patrones causa severas distorsiones debido a la difracción óptica en los patrones impresos y por lo tanto degradando el yield. En consecuencia, es necesario realizar un cambio en el diseño de layouts hacia diseños más regulares para poder mejorar la resolución de los patrones. Sin embargo, todavía no está claro el grado de regularidad que se debe introducir y como medir los beneficios y los perjuicios de los diseños regulares. El objetivo de esta tesis es buscar el grado de regularidad necesario para combatir las variaciones de litografía y mejorar la calidad del layout de un diseño. Las principales contribuciones para conseguirlo son: (1) la definición de diversas reglas de diseño de layout para mitigar las variaciones de litografía; (2) la propuesta de un modelo para estimar el yield paramétrico y así evaluar el impacto de la litografía en el diseño de layout; (3) el diseño de una métrica para analizar la calidad de un layout (LQM) incluyendo una métrica para capturar el grado de regularidad de un diseño (RM) y; (4) la creación de diferentes tipos de layout explotando los beneficios de la regularidad, referidos como Adaptative Lithography Aware Regular Cell Designs (ALARCs). La primera parte de la tesis, propone las diversas reglas de diseño para layouts regulares derivadas de simulaciones de litografía de tal manera que las fuentes de variación de litografía son minimizadas. Además, se propone una metodología de diseño para layouts regulares, referida como "gate biasing" para contrarrestar las variaciones sistemáticas dependientes del layout, las variaciones en la ventana de proceso del sistema litográfico y el efecto de puerta no rectilínea para configurar la longitud del canal del transistor correctamente. La segunda parte de la tesis, detalla el modelo de estimación del yield de litografía para predecir mediante un número reducido de simulaciones de litografía la cantidad de distorsión que se espera en un layout impreso debida a "hotspots". Se propone una eficiente metodología que identifica los distintos patrones de un layout, los simplifica para facilitar el análisis de los patrones y los clasifica en relación a la degradación predecida mediante simulaciones de litografía. El modelo de yield se calibra utilizando medidas de tiempo de un número reducido de idénticos circuitos de test implementados en una tecnología CMOS de 40nm y de esta manera, se utilizan datos de silicio para obtener una estimación realista del yield. La tercera parte de este trabajo, presenta una métrica para medir la calidad del layout (LQM), que considera diversos aspectos para dar una evaluación global de un diseño mediante un único valor. La LQM puede ajustarse mediante la asignación de diferentes pesos para cada métrica de evaluación o modificando los parámetros analizados. La LQM se configura mediante dos conjuntos de medidas diferentes. Además, ésta incluye una métrica de regularidad (RM) para capturar el grado de regularidad que se aplica en un diseño. Finalmente, esta disertación presenta los distintos diseños ALARC para una tecnología de 40nm utilizando diversos grados de regularidad y diferentes impactos en área. La calidad de estos diseños se demuestra creando automáticamente una librería de 266 celdas incluyendo celdas combinacionales y secuenciales y, sintetizando diversos circuitos ITC'99. Las librerías regulares solo presentan un 9% de impacto en área comparado con diseños de celdas estándar 2D y por tanto proponiendo diseños competitivos en área. La evaluación de los circuitos considerando la LQM muestra que los diseños regulares pueden mejorar otros diseños 2D dependiendo de la implementación del layout